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    Piezoelectric ceramic composition reducing leakage current and piezoelectric device using the same
    1.
    发明授权
    Piezoelectric ceramic composition reducing leakage current and piezoelectric device using the same 失效
    压电陶瓷组合物减少泄漏电流和使用其的压电器件

    公开(公告)号：US06656378B2

    公开(公告)日：2003-12-02

    申请号：US10067814

    申请日：2002-02-08

    申请人： Sang Koo Kwon ,  Kang Heon Hur ,  Jong Kuk Hong ,  Dong Hwan Seo

    发明人： Sang Koo Kwon ,  Kang Heon Hur ,  Jong Kuk Hong ,  Dong Hwan Seo

    IPC分类号： H01L41187

    CPC分类号： C04B35/493 ,  C04B2235/3241 ,  C04B2235/3249 ,  C04B2235/3258 ,  C04B2235/3267 ,  C04B2235/3275 ,  C04B2235/3296 ,  H01L41/1876

    摘要： Disclosed is a piezoelectric ceramic composition comprising a PZT piezoelectric composition, a B-site of which is substituted with a certain material, and chromium oxide, and a piezoelectric device using the piezoelectric ceramic composition. The piezoelectric ceramic composition has good heat resistance and frequency stability, and reduces a leakage current. There is provided the piezoelectric ceramic composition comprising a main component expressed by Pb[(Co1/2W1/2)xTi1−x−yZry]O3 (wherein, 0.001≦x≦0.04, and 0.35 ≦y≦0.55), Cr2O3 in an amount of 0.01 to 2 wt %, MnO2 in an amount of 0.1 to 0.5 wt %, and an additive in an amount of 0.01 to 2.0 wt %, based on the total weight of the piezoelectric ceramic composition, in which the additive is selected from the group consisting of CoO, MgO, ZnO, Al2O3, Fe2O3, Sb2O3, SnO2, CeO2, Nb2O5, V2O5 and WO3, and mixtures thereof. The piezoelectric ceramic composition satisfies piezoelectric properties such as kp and Qm needed for a piezoelectric material, and is 320° C. or higher in phase transition temperature, ±30 ppm/° C. in TCF, and 0.1% or less in oscillation frequency change after reflow; and the piezoelectric ceramic composition also has good piezoelectric properties such that the leakage current is reduced.

    摘要翻译： 本发明公开了一种压电陶瓷组合物和使用该压电陶瓷组合物的压电装置，其中PZT压电组合物的B部位用某种材料代替，氧化铬。 压电陶瓷组合物具有良好的耐热性和频率稳定性，并且减小了漏电流。 提供了包含由Pb [（Co1 / 2W1 / 2）xTi1-x-yZry] O3（其中0.001≤x≤0.04,0.35≤Y＆LE; 0.55）表示的主要成分的压电陶瓷组合物， 0.01〜2.0重量％的MnO 2，0.1〜0.5重量％的MnO 2，0.01〜2.0重量％的添加剂，相对于压电陶瓷组合物的总重量，添加剂为 选自CoO，MgO，ZnO，Al2O3，Fe2O3，Sb2O3，SnO2，CeO2，Nb2O5，V2O5和WO3，以及它们的混合物。 压电陶瓷组合物满足压电材料所需的压电特性如kp和Qm，在TCF中相变温度为320℃或更高，±30ppm /℃，振荡频率变化为0.1％以下 回流后 并且压电陶瓷组合物也具有良好的压电性能，使得泄漏电流降低。

    TRENCH SUBSTRATE AND METHOD OF FABRICATING THE SAME
    3.
    发明申请
    TRENCH SUBSTRATE AND METHOD OF FABRICATING THE SAME 审中-公开
    TRENCH基板及其制造方法

    公开(公告)号：US20110097553A1

    公开(公告)日：2011-04-28

    申请号：US12631624

    申请日：2009-12-04

    申请人： Jong Kuk Hong ,  Soon Jin Cho ,  Sun Uk Hwang

    发明人： Jong Kuk Hong ,  Soon Jin Cho ,  Sun Uk Hwang

    IPC分类号： H05K1/03 ,  B32B3/30 ,  H05K3/00

    CPC分类号： H05K3/0032 ,  H05K1/036 ,  H05K1/0366 ,  H05K3/045 ,  H05K3/107 ,  H05K2201/0209 ,  H05K2201/029 ,  Y10T428/2462

    摘要： Disclosed is a trench substrate, which includes a first insulating layer having trenches formed therein, a second insulating layer disposed on a lower surface of the first insulating layer and having laser processability inferior to that of the first insulating layer, and a negative pattern formed in the trenches, and in which the second insulating layer having laser processability inferior to that of the first insulating layer functions as a stopper, so that the trenches having the same shape are formed in the first insulating layer, thus enabling the formation of a fine and uniform circuit pattern. A method of fabricating the trench substrate is also provided.

    摘要翻译： 公开了一种沟槽衬底，其包括其中形成有沟槽的第一绝缘层，设置在第一绝缘层的下表面上并且具有劣于第一绝缘层的激光加工性的第二绝缘层，以及形成在 沟槽，其中具有劣于第一绝缘层的激光加工性的第二绝缘层用作止动件，使得具有相同形状的沟槽形成在第一绝缘层中，从而能够形成微细的和 均匀的电路图案。 还提供了制造沟槽衬底的方法。