摘要:
The lifetime of optical components used in deep-UV (DUV) excimer laser systems, including systems in a MOPA configuration, can be increased by reducing the intensity of pulses incident upon these components. In one approach, an output pulse can be “stretched” in order to reduce the peak power of the pulse. A pulse stretching component can be used, which can be mounted outside the laser enclosure with a horizontal beam path in order to provide a delay line with a minimum impact on the laser system footprint. The horizontal beam path also can minimize the number of optical components in the arm containing the high power beam. A beamsplitting prism can be used with the delay line to avoid the rapid degradation of coatings otherwise exposed to intense UV beams. The prism can expand the beam in the delay line in order to minimize beam intensity and losses due to reflection.
摘要:
A Master Oscillator (MO)—Power Amplifier (PA) configuration (MOPA) can be used advantageously in an excimer laser system for micro-lithography applications, where semiconductor manufacturers demand powers of 40 W or more in order to support the throughput requirements of advanced lithography scanner systems. A MOPA-based laser system can provide both high pulse energies and high spectral purity. A MOPA system can utilize a multi-pass PA, as well as a special beam path capable of reducing the amount of ASE (Amplified Spontaneous Emission) and feedback to the MO. Lithography scanner optics are primarily fused silica, such that the peak pulse power must be kept low to avoid material compaction when a MOPA system is used with lithography applications. This conflict between the demand for high average power and the low peak power requirement of the pulsed excimer laser source can be resolved by using a novel beam path to generate a sufficiently long pulse length.
摘要:
Laser systems have a line-narrowed master oscillator and a power oscillator for amplifying the output of the master oscillator. The power oscillator includes optical arrangements for limiting the bandwidth of radiation that can be amplified. The limited amplification bandwidth of the power oscillator is relatively broad compared to that of the output of the master oscillator, but narrower than would be the case without the bandwidth limiting arrangements. The bandwidth narrowing arrangements of the power oscillator function primarily to restrict the bandwidth of amplified spontaneous emission generated by the power oscillator.
摘要:
A Master Oscillator (MO)—Power Amplifier (PA) configuration (MOPA) can be used advantageously in an excimer laser system for micro-lithography applications, where semiconductor manufacturers demand powers of 40 W or more in order to support the throughput requirements of advanced lithography scanner systems. The timing of discharges in discharge chambers of the MO and PA can be precisely controlled using a common pulser to drive the respective chambers. The timing of the discharges further can be controlled through the timing of the pre-ionization in the chambers, or through control of the reset current in the final compression stages of the pulser. A common pulser, or separate pulser circuits, also can be actively controlled in time using a feedback loop, with precision timing being achieved through control of the pre-ionization in each individual discharge chamber. Yet another system provides for real-time compensation of time delay jitter of discharge pulses in the chambers.
摘要:
The lifetime of optical components used in deep-UV (DUV) excimer laser systems, including systems in a MOPA configuration, can be increased by reducing the intensity of pulses incident upon these components. In one approach, an output pulse can be “stretched” in order to reduce the peak power of the pulse. A pulse stretching component can be used, which can be mounted outside the laser enclosure with a horizontal beam path in order to provide a delay line with a minimum impact on the laser system footprint. The horizontal beam path also can minimize the number of optical components in the arm containing the high power beam. A beamsplitting prism can be used with the delay line to avoid the rapid degradation of coatings otherwise exposed to intense UV beams. The prism can expand the beam in the delay line in order to minimize beam intensity and losses due to reflection.
摘要:
A Master Oscillator (MO)—Power Amplifier (PA) configuration (MOPA) can be used advantageously in an excimer laser system for micro-lithography applications, where semiconductor manufacturers demand powers of 40 W or more in order to support the throughput requirements of advanced lithography scanner systems. The timing of discharges in discharge chambers of the MO and PA can be precisely controlled using a common pulser to drive the respective chambers. The timing of the discharges further can be controlled through the timing of the pre-ionization in the chambers, or through control of the reset current in the final compression stages of the pulser. A common pulser, or separate pulser circuits, also can be actively controlled in time using a feedback loop, with precision timing being achieved through control of the pre-ionization in each individual discharge chamber. Yet another system provides for real-time compensation of time delay jitter of discharge pulses in the chambers.
摘要:
A molecular fluorine laser system includes a discharge tube filled with a gas mixture including molecular fluorine and at least one buffer gas and having a total pressure of less than substantially 2500 mbar, multiple electrodes within the discharge tube, a pulsed discharge circuit connected to the electrodes for energizing the gas mixture, a line-selection optic for selecting one of multiple closely-spaced lines around 157 nm emitted from the discharge tube, and a laser resonator including the line-selection optic and the discharge tube for generating a beam of laser pulses having a wavelength around 157 nm at a bandwidth of less than 0.6 pm.
摘要:
A gain-module for use in an OPS-laser includes a multilayer semiconductor gain-structure surmounting a multilayer compound mirror-structure. Within the multilayer compound mirror-structure is a relatively thick layer of diamond which serves as a heat-spreader.
摘要:
In an optically pumped semiconductor laser including a semiconductor laser heterostructure, energy of high-energy electrons of an electron beam is converted by excimer formation and dissociation in a gas into ultraviolet (UV) radiation. The ultraviolet radiation is used to optically pump the heterostructure. Materials of the heterostructure may include II-VI compounds, oxides, or diamond. Both surface-emitting and edge-emitting heterostructures may be optically pumped by the UV radiation.
摘要:
A F2-laser includes a discharge chamber filled with a gas mixture including molecular fluorine for generating a spectral emission in a wavelength range between 157 nm and 158 nm including a primary line and a secondary line, multiple electrodes coupled with a power supply circuit for producing a pulsed discharge to energize the molecular fluorine, a resonator including the discharge chamber and an interferometric device for generating a laser beam having a bandwidth of less than 1 pm, and a wavelength monitor coupled in a feedback loop with a processor for monitoring a spectral distribution of the laser beam. The processor controls an interferometric spectrum of the interferometric device based on the monitored spectral distribution such that sidebands within the spectral distribution are substantially minimized.