公开(公告)号：US20120146108A1

公开(公告)日：2012-06-14

申请号：US13314122

申请日：2011-12-07

申请人： Shu-Ming CHANG ,  Chien-Hui CHEN ,  Yen-Shih HO ,  Chien-Hung LIU ,  Ho-Yin YIU ,  Ying-Nan WEN

发明人： Shu-Ming CHANG ,  Chien-Hui CHEN ,  Yen-Shih HO ,  Chien-Hung LIU ,  Ho-Yin YIU ,  Ying-Nan WEN

IPC分类号： H01L29/772 ,  H01L21/762

CPC分类号： H01L24/05 ,  H01L21/6835 ,  H01L21/76898 ,  H01L24/03 ,  H01L2221/6834 ,  H01L2221/6835 ,  H01L2221/68368 ,  H01L2224/0401 ,  H01L2224/05558 ,  H01L2224/05572 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01033 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/00 ,  H01L2224/05552

摘要： An embodiment of the invention provides a chip package which includes: a semiconductor substrate having a first surface and an opposite second surface; a drain region located in the semiconductor substrate; a source region located in the semiconductor substrate; a gate located on the semiconductor substrate or at least partially buried in the semiconductor substrate, wherein a gate dielectric layer is between the gate and the semiconductor substrate; a drain conducting structure disposed on the first surface of the semiconductor substrate and electrically connected to the drain region; a source conducting structure disposed on the second surface of the semiconductor substrate and electrically connected to the source region; and a gate conducting structure disposed on the first surface of the semiconductor substrate and electrically connected to the gate.

摘要翻译： 本发明的实施例提供一种芯片封装，其包括：具有第一表面和相对的第二表面的半导体衬底; 位于半导体衬底中的漏区; 源区域，位于所述半导体衬底中; 位于所述半导体衬底上或至少部分地埋设在所述半导体衬底中的栅极，其中栅极电介质层位于所述栅极和所述半导体衬底之间; 漏极导电结构，设置在所述半导体衬底的所述第一表面上并电连接到所述漏极区; 源极导电结构，其设置在所述半导体衬底的所述第二表面上并电连接到所述源极区; 以及栅极导电结构，其设置在所述半导体衬底的所述第一表面上并电连接到所述栅极。

公开(公告)号：US20120146153A1

公开(公告)日：2012-06-14

申请号：US13314114

申请日：2011-12-07

申请人： Ying-Nan WEN ,  Ho-Yin YIU ,  Yen-Shih HO ,  Shu-Ming CHANG ,  Chien-Hung LIU ,  Shih-Yi LEE ,  Wei-Chung YANG

发明人： Ying-Nan WEN ,  Ho-Yin YIU ,  Yen-Shih HO ,  Shu-Ming CHANG ,  Chien-Hung LIU ,  Shih-Yi LEE ,  Wei-Chung YANG

IPC分类号： H01L27/092 ,  H01L21/28 ,  H01L21/768

CPC分类号： H01L21/76898 ,  H01L21/6835 ,  H01L23/3114 ,  H01L23/3185 ,  H01L23/481 ,  H01L24/05 ,  H01L24/13 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/6835 ,  H01L2221/68363 ,  H01L2224/02372 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/05672 ,  H01L2224/11002 ,  H01L2224/13007 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/96 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/014 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00 ,  H01L2224/05552

摘要： A chip package includes: a substrate; a drain and a source regions located in the substrate; a gate located on or buried in the substrate; a drain conducting structure, a source conducting structure, and a gate conducting structure, disposed on the substrate and electrically connected to the drain region, the source region, and the gate, respectively; a second substrate disposed beside the substrate; a second drain and a second source region located in the second substrate, wherein the second drain region is electrically connected to the source region; a second gate located on or buried in the second substrate; and a second source and a second gate conducting structure disposed on the second substrate and electrically connected to the second source region and the second gate, respectively, wherein terminal points of the drain, the source, the gate, the second source, and the second gate conducting structures are substantially coplanar.

摘要翻译： 芯片封装包括：基板; 位于衬底中的漏极和源极区域; 位于衬底上或埋在衬底中的门; 漏极导电结构，源极导电结构和栅极导电结构，分别设置在所述衬底上并电连接到所述漏极区域，所述源极区域和所述栅极; 设置在所述基板旁边的第二基板; 位于所述第二基板中的第二漏极和第二源极区域，其中所述第二漏极区域电连接到所述源极区域; 位于第二基板上或埋在第二基板中的第二栅极; 以及第二源极和第二栅极导电结构，其设置在所述第二基板上并分别电连接到所述第二源极区域和所述第二栅极，其中所述漏极，所述源极，所述栅极，所述第二源极和所述第二栅极的端点 栅极导电结构基本上共面。

公开(公告)号：US20120146111A1

公开(公告)日：2012-06-14

申请号：US13324815

申请日：2011-12-13

申请人： Shu-Ming CHANG ,  Yen-Shih HO ,  Ho-Yin YIU

发明人： Shu-Ming CHANG ,  Yen-Shih HO ,  Ho-Yin YIU

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L21/76898 ,  H01L2924/0002 ,  H01L2924/13091 ,  H01L2924/157 ,  H01L2924/00

摘要： An embodiment of the invention provides a chip package including a semiconductor substrate, a drain electrode, a source electrode and a gate electrode. The semiconductor substrate has a first surface and an opposite second surface wherein the second surface has a recess. The drain electrode is disposed on the first surface and covers the recess. The source electrode is disposed on the second surface in a position corresponding to the drain electrode covering the recess. The gate electrode is disposed on the second surface. An embodiment of the invention further provides a manufacturing method of a chip package.

摘要翻译： 本发明的实施例提供一种包括半导体衬底，漏电极，源电极和栅电极的芯片封装。 半导体衬底具有第一表面和相对的第二表面，其中第二表面具有凹部。 漏电极设置在第一表面上并覆盖凹部。 源电极设置在与覆盖凹部的漏电极对应的位置的第二表面上。 栅电极设置在第二表面上。 本发明的实施例还提供了一种芯片封装的制造方法。

公开(公告)号：US20120267780A1

公开(公告)日：2012-10-25

申请号：US13452595

申请日：2012-04-20

申请人： Bing-Siang CHEN ,  Chien-Hui CHEN ,  Shu-Ming CHANG ,  Tsang-Yu LIU ,  Yen-Shih HO

发明人： Bing-Siang CHEN ,  Chien-Hui CHEN ,  Shu-Ming CHANG ,  Tsang-Yu LIU ,  Yen-Shih HO

IPC分类号： H01L23/498 ,  H01L21/78

CPC分类号： H01L21/78 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/16 ,  H01L2225/06513 ,  H01L2225/06582 ,  H01L2924/13091 ,  H01L2924/1461 ,  H01L2924/00

摘要： An embodiment of the invention provides a chip package which includes: a first chip; a second chip disposed on the first chip, wherein a side surface of the second chip is a chemically-etched surface; and a bonding bulk disposed between the first chip and the second chip such that the first chip and the second chip are bonded with each other.

摘要翻译： 本发明的实施例提供一种芯片封装，其包括：第一芯片; 设置在所述第一芯片上的第二芯片，其中所述第二芯片的侧表面是化学蚀刻表面; 以及设置在所述第一芯片和所述第二芯片之间的结合体，使得所述第一芯片和所述第二芯片彼此结合。

公开(公告)号：US20120313222A1

公开(公告)日：2012-12-13

申请号：US13178375

申请日：2011-07-07

申请人： Hung-Jen LEE ,  Shu-Ming CHANG ,  Chen-Han CHIANG ,  Tsang-Yu LIU ,  Yen-Shih HO

发明人： Hung-Jen LEE ,  Shu-Ming CHANG ,  Chen-Han CHIANG ,  Tsang-Yu LIU ,  Yen-Shih HO

IPC分类号： H01L29/02 ,  H01L21/78

CPC分类号： H01L23/544 ,  H01L21/561 ,  H01L21/6836 ,  H01L23/16 ,  H01L23/3114 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/562 ,  H01L24/13 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/73 ,  H01L24/83 ,  H01L24/94 ,  H01L2221/68327 ,  H01L2221/68377 ,  H01L2223/5446 ,  H01L2224/02377 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/131 ,  H01L2224/29011 ,  H01L2224/29013 ,  H01L2224/29124 ,  H01L2224/2957 ,  H01L2224/296 ,  H01L2224/3003 ,  H01L2224/30155 ,  H01L2224/32225 ,  H01L2224/73253 ,  H01L2224/83125 ,  H01L2224/83127 ,  H01L2224/83192 ,  H01L2224/83895 ,  H01L2224/94 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/1461 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2224/83 ,  H01L2924/00014 ,  H01L2924/01032 ,  H01L2924/00

摘要： An embodiment of the present invention provides a manufacturing method of a chip package structure including: providing a first substrate having a plurality of predetermined scribe lines defined thereon, wherein the predetermined scribe lines define a plurality of device regions; bonding a second substrate to the first substrate, wherein a spacing layer is disposed therebetween and has a plurality of chip support rings located in the device regions respectively and a cutting support structure located on peripheries of the chip support rings, and the spacing layer has a gap pattern separating the cutting support structure from the chip support rings; and cutting the first substrate and the second substrate to form a plurality of chip packages. Another embodiment of the present invention provides a chip package structure.

摘要翻译： 本发明的一个实施例提供了一种芯片封装结构的制造方法，包括：提供具有限定在其上的多个预定划线的第一基板，其中，所述预定划线限定多个器件区域; 将第二基板接合到第一基板，其中间隔层设置在其间并且分别具有位于装置区域中的多个芯片支撑环和位于芯片支撑环的周边的切割支撑结构，并且间隔层具有 将切割支撑结构与芯片支撑环分离的间隙图案; 以及切割所述第一基板和所述第二基板以形成多个芯片封装。 本发明的另一实施例提供一种芯片封装结构。

公开(公告)号：US20120313261A1

公开(公告)日：2012-12-13

申请号：US13492649

申请日：2012-06-08

申请人： Hung-Jen LEE ,  Shu-Ming CHANG ,  Chen-Han CHIANG ,  Tsang-Yu LIU ,  Yen-Shih HO

发明人： Hung-Jen LEE ,  Shu-Ming CHANG ,  Chen-Han CHIANG ,  Tsang-Yu LIU ,  Yen-Shih HO

IPC分类号： H01L23/48 ,  H01L21/78

CPC分类号： H01L23/544 ,  H01L21/561 ,  H01L21/6836 ,  H01L23/16 ,  H01L23/3114 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/562 ,  H01L24/13 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/73 ,  H01L24/83 ,  H01L24/94 ,  H01L2221/68327 ,  H01L2221/68377 ,  H01L2223/5446 ,  H01L2224/02377 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/131 ,  H01L2224/29011 ,  H01L2224/29013 ,  H01L2224/29124 ,  H01L2224/2957 ,  H01L2224/296 ,  H01L2224/3003 ,  H01L2224/30155 ,  H01L2224/32225 ,  H01L2224/73253 ,  H01L2224/83125 ,  H01L2224/83127 ,  H01L2224/83192 ,  H01L2224/83895 ,  H01L2224/94 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/1461 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2224/83 ,  H01L2924/00014 ,  H01L2924/01032 ,  H01L2924/00

摘要： An embodiment of the present invention provides a manufacturing method of a chip package structure including: providing a first substrate having a plurality of predetermined scribe lines defining a plurality of device regions; bonding a second substrate to the first substrate, wherein a spacing layer is disposed therebetween and has a plurality of chip support rings located in the device regions respectively, a cutting support structure located on peripheries of the chip support rings, a plurality of stop rings surrounding the chip support rings respectively, wherein a gap pattern separating the stop rings from the cutting support structure and the chip support rings; and cutting the first substrate and the second substrate to form a plurality of chip packages. Another embodiment of the present invention provides a chip package structure.

摘要翻译： 本发明的一个实施例提供了一种芯片封装结构的制造方法，包括：提供具有限定多个器件区域的多个预定划线的第一衬底; 将第二基板接合到第一基板，其中间隔层设置在其间并且分别具有位于装置区域中的多个芯片支撑环，位于芯片支撑环的周边的切割支撑结构，围绕 所述芯片支撑环分别具有将所述止动环与所述切割支撑结构和所述芯片支撑环分离的间隙图案; 以及切割所述第一基板和所述第二基板以形成多个芯片封装。 本发明的另一实施例提供一种芯片封装结构。

公开(公告)号：US20120241923A1

公开(公告)日：2012-09-27

申请号：US13219468

申请日：2011-08-26

申请人： Yao-Hsiang CHEN ,  Tsang-Yu LIU ,  Yen-Shih HO ,  Shu-Ming CHANG

发明人： Yao-Hsiang CHEN ,  Tsang-Yu LIU ,  Yen-Shih HO ,  Shu-Ming CHANG

IPC分类号： H01L21/60 ,  H01L23/498

CPC分类号： H01L23/552 ,  H01L21/71 ,  H01L23/3114 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L2224/0346 ,  H01L2224/0361 ,  H01L2224/0401 ,  H01L2224/05572 ,  H01L2224/06155 ,  H01L2224/1147 ,  H01L2224/11912 ,  H01L2224/13022 ,  H01L2224/13144 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/05552

摘要： An IC wafer and the method of making the IC wafer, the IC wafer includes an integrated circuit layer having a plurality of solder pads and an insulated layer arranged thereon, a plurality of through holes cut through the insulated layer corresponding to the solder pads respectively for the implantation of a package layer, and an electromagnetic shielding layer formed on the top surface of the insulated layer and electrically isolated from the solder pads of the integrated circuit layer for electromagnetic sheilding. Thus, the integrated circuit does not require any further shielding mask, simplifying the fabrication. Further, the design of the through holes facilitates further packaging process.

摘要翻译： IC晶片和IC晶片的制造方法，IC晶片包括具有多个焊盘和设置在其上的绝缘层的集成电路层，多个贯穿相应于焊盘的绝缘层的通孔，分别用于 封装层的注入和形成在绝缘层的顶表面上并与用于电磁结构的集成电路层的焊盘电隔离的电磁屏蔽层。 因此，集成电路不需要任何进一步的屏蔽掩模，从而简化制造。 此外，通孔的设计有助于进一步的包装过程。

公开(公告)号：US20120168939A1

公开(公告)日：2012-07-05

申请号：US13340162

申请日：2011-12-29

申请人： Shu-Ming CHANG ,  Tsang-Yu LIU ,  Yen-Shih HO

发明人： Shu-Ming CHANG ,  Tsang-Yu LIU ,  Yen-Shih HO

IPC分类号： H01L23/498 ,  H01L21/60

CPC分类号： H01L25/50 ,  B81C1/00238 ,  B81C2203/0785 ,  B81C2203/0792 ,  H01L21/76898 ,  H01L21/8221 ,  H01L23/10 ,  H01L24/05 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/73 ,  H01L24/94 ,  H01L25/0657 ,  H01L2224/02372 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05554 ,  H01L2224/05567 ,  H01L2224/056 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05669 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/1403 ,  H01L2224/14181 ,  H01L2224/14517 ,  H01L2224/17517 ,  H01L2224/73103 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/00012 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/05552

摘要： An embodiment of the invention provides a chip package which includes: a first chip; a second chip disposed on the first chip; a hole extending from a surface of the first chip towards the second chip; a conducting layer disposed on the surface of the first chip and extending into the hole and electrically connected to a conducting region or a doped region in the first chip; and a support bulk disposed between the first chip and the second chip, wherein the support bulk substantially and/or completely covers a bottom of the hole.

摘要翻译： 本发明的实施例提供一种芯片封装，其包括：第一芯片; 设置在第一芯片上的第二芯片; 从所述第一芯片的表面向所述第二芯片延伸的孔; 导电层，设置在所述第一芯片的表面上并延伸到所述孔中并电连接到所述第一芯片中的导电区域或掺杂区域; 以及设置在所述第一芯片和所述第二芯片之间的支撑体，其中所述支撑体基本上和/或完全覆盖所述孔的底部。

公开(公告)号：US20120319297A1

公开(公告)日：2012-12-20

申请号：US13524985

申请日：2012-06-15

申请人： Yu-Lin YEN ,  Chien-Hui CHEN ,  Tsang-Yu LIU ,  Yen-Shih HO

发明人： Yu-Lin YEN ,  Chien-Hui CHEN ,  Tsang-Yu LIU ,  Yen-Shih HO

IPC分类号： H01L23/48 ,  H01L21/78

CPC分类号： H01L23/3128 ,  H01L23/3114 ,  H01L23/481 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2924/1461 ,  H01L2924/014 ,  H01L2924/00

摘要： An embodiment of the invention provides a chip package which includes: a substrate having a plurality of sides and a plurality of corner regions, wherein each of the corner regions is located at an intersection of at least two of the sides of the substrate; a device region formed in the substrate; a conducting layer disposed on the substrate and electrically connected to the device region; an insulating layer disposed between the substrate and the conducting layer; and a carrier substrate, wherein the substrate is disposed on the carrier substrate, and the substrate has a recess extending towards the carrier substrate in at least one of the corner regions.

摘要翻译： 本发明的实施例提供一种芯片封装，其包括：具有多个侧面和多个拐角区域的基板，其中每个所述拐角区域位于所述基板的至少两个侧面的相交处; 形成在所述基板中的器件区域; 导电层，其设置在所述基板上并电连接到所述器件区域; 设置在所述基板和所述导电层之间的绝缘层; 以及载体基板，其中所述基板设置在所述载体基板上，并且所述基板具有在至少一个所述拐角区域中朝向所述载体基板延伸的凹部。

公开(公告)号：US20120184070A1

公开(公告)日：2012-07-19

申请号：US13352234

申请日：2012-01-17

申请人： Chien-Hui CHEN ,  Ming-Kun YANG ,  Tsang-Yu LIU ,  Yen-Shih HO

发明人： Chien-Hui CHEN ,  Ming-Kun YANG ,  Tsang-Yu LIU ,  Yen-Shih HO

IPC分类号： H01L21/78

CPC分类号： H01L21/76898 ,  H01L23/3114 ,  H01L23/3121 ,  H01L23/481 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/73253 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2924/00014 ,  H01L2924/00

摘要： An embodiment of the invention provides a method for forming a chip package which includes: providing a substrate having a first surface and a second surface, wherein at least two conducting pads are disposed on the first surface of the substrate; partially removing the substrate from the second surface of the substrate to form at least two holes extending towards the first surface, wherein the holes correspondingly and respectively align with one of the conducting pads; after the holes are formed, partially removing the substrate from the second substrate to form at least a recess extending towards the first surface, wherein the recess overlaps with the holes; forming an insulating layer on a sidewall and a bottom of the trench and on sidewalls of the holes; and forming a conducting layer on the insulating layer, wherein the conducting layer electrically contacts with one of the conducting pads.

摘要翻译： 本发明的一个实施例提供了一种用于形成芯片封装的方法，其包括：提供具有第一表面和第二表面的衬底，其中至少两个导电焊盘设置在衬底的第一表面上; 从衬底的第二表面部分地去除衬底以形成朝向第一表面延伸的至少两个孔，其中，孔对应并分别对准导电焊盘中的一个; 在形成所述孔之后，从所述第二基板部分地移除所述基板以形成朝向所述第一表面延伸的至少一个凹部，其中所述凹部与所述孔重叠; 在沟槽的侧壁和底部以及孔的侧壁上形成绝缘层; 以及在所述绝缘层上形成导电层，其中所述导电层与所述导电焊盘之一电接触。