公开(公告)号：US09871165B2

公开(公告)日：2018-01-16

申请号：US15601890

申请日：2017-05-22

Applicant: The Silanna Group Pty Ltd

Inventor： Petar Atanackovic ,  Matthew Godfrey

IPC: H01L29/06 ,  H01L31/00 ,  H01L21/00 ,  H01L33/06 ,  H01L33/00 ,  H01L21/02 ,  H01L33/16 ,  H01L33/32 ,  H01L27/15 ,  H01L33/10 ,  H01L33/14 ,  H01L33/18

CPC classification number: H01L33/06 ,  H01L21/02381 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/15 ,  H01L33/007 ,  H01L33/10 ,  H01L33/14 ,  H01L33/16 ,  H01L33/18 ,  H01L33/32

Abstract: Semiconductor structures and methods for forming those semiconductor structures are disclosed. For example, a p-type or n-type semiconductor structure is disclosed. The semiconductor structure has a polar crystal structure with a growth axis that is substantially parallel to a spontaneous polarization axis of the polar crystal structure. The semiconductor structure changes in composition from a wider band gap (WBG) material to a narrower band gap (NBG) material or from a NBG material to a WBG material along the growth axis to induce p-type or n-type conductivity.

公开(公告)号：US20160149075A1

公开(公告)日：2016-05-26

申请号：US14976814

申请日：2015-12-21

Applicant: THE SILANNA GROUP PTY LTD.

Inventor： Petar Atanackovic

IPC: H01L33/06 ,  H01L33/32 ,  H01L33/46 ,  H01L33/18 ,  H01L33/10

Abstract: An optoelectronic device comprising a semiconductor structure includes a p-type active region and an n-type active region. The semiconductor structure is comprised solely of one or more superlattices, where each superlattice is comprised of a plurality of unit cells. Each unit cell comprises at least two distinct substantially single crystal layers.

Abstract translation: 包括半导体结构的光电器件包括p型有源区和n型有源区。 半导体结构仅由一个或多个超晶格组成，其中每个超晶格由多个单元电池组成。 每个单元电池包括至少两个不同的基本单晶层。

公开(公告)号：US20180122985A1

公开(公告)日：2018-05-03

申请号：US15853379

申请日：2017-12-22

Applicant: The Silanna Group Pty Ltd

Inventor： Petar Atanackovic ,  Matthew Godfrey

IPC: H01L33/06 ,  H01L21/02 ,  H01L33/00 ,  H01L33/32 ,  H01L27/15 ,  H01L33/10 ,  H01L33/14 ,  H01L33/18 ,  H01L33/16

CPC classification number: H01L33/06 ,  H01L21/02381 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/15 ,  H01L33/007 ,  H01L33/10 ,  H01L33/14 ,  H01L33/16 ,  H01L33/18 ,  H01L33/32

Abstract: Semiconductor structures and methods for forming those semiconductor structures are disclosed. For example, a p-type or n-type semiconductor structure is disclosed. The semiconductor structure has a polar crystal structure with a growth axis that is substantially parallel to a spontaneous polarization axis of the polar crystal structure. The semiconductor structure changes in composition from a wider band gap (WBG) material to a narrower band gap (NBG) material or from a NBG material to a WBG material along the growth axis to induce p-type or n-type conductivity.

公开(公告)号：US20170263809A1

公开(公告)日：2017-09-14

申请号：US15594015

申请日：2017-05-12

Applicant: THE SILANNA GROUP PTY LTD

Inventor： Petar Atanackovic

IPC: H01L33/00 ,  H01L29/16 ,  H01L31/0304 ,  H01L33/34 ,  H01L31/105 ,  H01L31/18 ,  H01L33/12 ,  H01L33/32 ,  H01L33/06 ,  H01L31/0352

CPC classification number: H01L33/0075 ,  H01L29/1606 ,  H01L29/167 ,  H01L31/0288 ,  H01L31/03042 ,  H01L31/03044 ,  H01L31/03048 ,  H01L31/035263 ,  H01L31/105 ,  H01L31/1848 ,  H01L31/1856 ,  H01L33/0012 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/12 ,  H01L33/325 ,  H01L33/343 ,  Y02E10/50

Abstract: A superlattice and method for forming that superlattice are disclosed. In particular, an engineered layered single crystal structure forming a superlattice is disclosed. The superlattice provides p-type or n-type conductivity, and comprises alternating host layers and impurity layers, wherein: the host layers consist essentially of a semiconductor material; and the impurity layers consist of a donor or acceptor material.

公开(公告)号：US20160308090A1

公开(公告)日：2016-10-20

申请号：US15192731

申请日：2016-06-24

Applicant: THE SILANNA GROUP PTY LTD

Inventor： Petar Atanackovic

IPC: H01L33/00 ,  H01L33/32 ,  H01L33/20 ,  H01L21/66 ,  H01L33/44 ,  H01L27/15

CPC classification number: H01L33/0095 ,  H01L22/24 ,  H01L22/26 ,  H01L27/153 ,  H01L33/20 ,  H01L33/30 ,  H01L33/32 ,  H01L33/44 ,  H01L2933/005 ,  H01L2933/0058

Abstract: Light emitting semiconductor junctions are disclosed. An exemplary light emitting junction has a first electrical contact coupled to a first side of the junction. The exemplary junction also has a second electrical contact coupled to a second side of the junction. The exemplary junction also has a region of set straining material that exerts a strain on the junction and alters both: (i) an optical polarization, and (ii) an emission wavelength of the junction. The region of set straining material is not on a current path between said first electrical contact and said second electrical contact. The region of set straining material covers a third side and a fourth side of the light emitting junction along a cross section of the light emitting junction. The light emitting semiconductor junction device comprises a three-five alloy.

公开(公告)号：US09691938B2

公开(公告)日：2017-06-27

申请号：US14976337

申请日：2015-12-21

Applicant: THE SILANNA GROUP PTY LTD.

Inventor： Petar Atanackovic ,  Matthew Godfrey

IPC: H01L21/00 ,  H01L33/06 ,  H01L33/00 ,  H01L33/16 ,  H01L33/32 ,  H01L21/02 ,  H01L27/15 ,  H01L33/10 ,  H01L33/14 ,  H01L33/18

CPC classification number: H01L33/06 ,  H01L21/02381 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/15 ,  H01L33/007 ,  H01L33/10 ,  H01L33/14 ,  H01L33/16 ,  H01L33/18 ,  H01L33/32

Abstract: Semiconductor structures and methods for forming those semiconductor structures are disclosed. For example, a p-type or n-type semiconductor structure is disclosed. The semiconductor structure has a polar crystal structure with a growth axis that is substantially parallel to a spontaneous polarization axis of the polar crystal structure. The semiconductor structure changes in composition from a wider band gap (WBG) material to a narrower band gap (NBG) material or from a NBG material to a WBG material along the growth axis to induce p-type or n-type conductivity.

公开(公告)号：US09685587B2

公开(公告)日：2017-06-20

申请号：US14976208

申请日：2015-12-21

Applicant: THE SILANNA GROUP PTY LTD.

Inventor： Petar Atanackovic

IPC: H01L29/06 ,  H01L33/06 ,  H01L29/16 ,  H01L29/167 ,  H01L31/0288 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/105 ,  H01L31/18 ,  H01L33/12 ,  H01L33/32 ,  H01L33/34 ,  H01L33/00

CPC classification number: H01L33/0075 ,  H01L29/1606 ,  H01L29/167 ,  H01L31/0288 ,  H01L31/03042 ,  H01L31/03044 ,  H01L31/03048 ,  H01L31/035263 ,  H01L31/105 ,  H01L31/1848 ,  H01L31/1856 ,  H01L33/0012 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/12 ,  H01L33/325 ,  H01L33/343 ,  Y02E10/50

Abstract: A superlattice and method for forming that superlattice are disclosed. In particular, an engineered layered single crystal structure forming a superlattice is disclosed. The superlattice provides p-type or n-type conductivity, and comprises alternating host layers and impurity layers, wherein: the host layers consist essentially of a semiconductor material; and the impurity layers consist essentially of a corresponding donor or acceptor material.

公开(公告)号：US20160163920A1

公开(公告)日：2016-06-09

申请号：US14976208

申请日：2015-12-21

Applicant: THE SILANNA GROUP PTY LTD.

Inventor： Petar Atanackovic

IPC: H01L33/06 ,  H01L31/0304 ,  H01L31/0352 ,  H01L33/00 ,  H01L33/34 ,  H01L33/12 ,  H01L29/167 ,  H01L29/16 ,  H01L31/0288 ,  H01L31/18 ,  H01L33/32 ,  H01L31/105

CPC classification number: H01L33/0075 ,  H01L29/1606 ,  H01L29/167 ,  H01L31/0288 ,  H01L31/03042 ,  H01L31/03044 ,  H01L31/03048 ,  H01L31/035263 ,  H01L31/105 ,  H01L31/1848 ,  H01L31/1856 ,  H01L33/0012 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/12 ,  H01L33/325 ,  H01L33/343 ,  Y02E10/50

Abstract: A superlattice and method for forming that superlattice are disclosed. In particular, an engineered layered single crystal structure forming a superlattice is disclosed. The superlattice provides p-type or n-type conductivity, and comprises alternating host layers and impurity layers, wherein: the host layers consist essentially of a semiconductor material; and the impurity layers consist essentially of a corresponding donor or acceptor material.

Abstract translation: 公开了一种用于形成超晶格的超晶格和方法。 特别地，公开了形成超晶格的工程化层状单晶结构。 超晶格提供p型或n型导电性，并且包括交替的主体层和杂质层，其中：主体层基本上由半导体材料组成; 并且杂质层基本上由相应的供体或受体材料组成。

公开(公告)号：US20160149074A1

公开(公告)日：2016-05-26

申请号：US14976337

申请日：2015-12-21

Applicant: THE SILANNA GROUP PTY LTD.

Inventor： Petar Atanackovic ,  Matthew Godfrey

IPC: H01L33/06 ,  H01L33/10 ,  H01L27/15 ,  H01L33/18 ,  H01L33/32 ,  H01L33/00 ,  H01L33/14

CPC classification number: H01L33/06 ,  H01L21/02381 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/15 ,  H01L33/007 ,  H01L33/10 ,  H01L33/14 ,  H01L33/16 ,  H01L33/18 ,  H01L33/32

Abstract: Semiconductor structures and methods for forming those semiconductor structures are disclosed. For example, a p-type or n-type semiconductor structure is disclosed. The semiconductor structure has a polar crystal structure with a growth axis that is substantially parallel to a spontaneous polarization axis of the polar crystal structure. The semiconductor structure changes in composition from a wider band gap (WBG) material to a narrower band gap (NBG) material or from a NBG material to a WBG material along the growth axis to induce p-type or n-type conductivity.

Abstract translation: 公开了用于形成这些半导体结构的半导体结构和方法。 例如，公开了p型或n型半导体结构。 半导体结构具有极性晶体结构，其生长轴基本上平行于极性晶体结构的自发极化轴。 半导体结构从更宽的带隙（WBG）材料到较窄的带隙（NBG）材料或从NBG材料沿生长轴向WBG材料的组成变化以诱导p型或n型导电性。

公开(公告)号：US20150014723A1

公开(公告)日：2015-01-15

申请号：US14325131

申请日：2014-07-07

Applicant: THE SILANNA GROUP PTY LTD.

Inventor： Petar Atanackovic

IPC: H01L33/44 ,  H01L33/00 ,  H01L33/30 ,  H01L33/24

CPC classification number: H01L33/0095 ,  H01L22/24 ,  H01L22/26 ,  H01L27/153 ,  H01L33/20 ,  H01L33/30 ,  H01L33/32 ,  H01L33/44 ,  H01L2933/005 ,  H01L2933/0058

Abstract: Light emitting semiconductor junctions are disclosed. An exemplary light emitting junction has a first electrical contact coupled to a first side of the junction. The exemplary junction also has a second electrical contact coupled to a second side of the junction. The exemplary junction also has a region of set straining material that exerts a strain on the junction and alters both: (i) an optical polarization, and (ii) an emission wavelength of the junction. The region of set straining material is not on a current path between said first electrical contact and said second electrical contact. The region of set straining material covers a third side and a fourth side of the light emitting junction along a cross section of the light emitting junction. The light emitting semiconductor junction device comprises a three-five alloy.

Abstract translation: 公开了发光半导体结。 示例性的发光结具有耦合到结的第一侧的第一电接触。 该示例性结还具有耦合到该结的第二侧的第二电接触。 示例性接合部还具有在接合处施加应变的变形材料区域，并改变：（i）光学偏振，和（ii）结的发射波长。 设定应变材料的区域不在所述第一电触头和所述第二电触头之间的电流路径上。 固定应变材料的区域沿着发光结的横截面覆盖发光结的第三侧和第四侧。 发光半导体结器件包括三合金。