摘要:
A power supply circuit is disclosed in which the influence due to variation in the characteristics of transistors is reduced by variation alleviating devices, each connected to transistors that constitute a current mirror. The power supply circuit comprises a configuration having a current mirror to produce a reference voltage. A multiple number of transistors constitute a current mirror. Multiple variation alleviating devices are connected in series with individual transistors.
摘要:
A power supply circuit is disclosed in which the influence due to variation in the characteristics of transistors is reduced by variation alleviating devices, each connected to transistors that constitute a current mirror. The power supply circuit comprises a configuration having a current mirror to produce a reference voltage. A multiple number of transistors constitute a current mirror. Multiple variation alleviating devices are connected in series with individual transistors.
摘要:
Such a method is disclosed that includes preparing first and second semiconductor chips, the first semiconductor chip including a first electrode formed on one surface thereof and a second electrode formed on the other surface thereof so as to overlap the first electrode as viewed from a stacking direction, and the second semiconductor chip including a third electrode formed on one surface thereof and a fourth electrode formed on the other surface thereof so as not to overlap the third electrode as viewed from the stacking direction, and stacking the first and second semiconductor chips in the stacking direction so that the second electrode is connected to the third electrode by using a bonding tool including a concave at a position corresponding to the fourth electrode.
摘要:
A plurality of memory cells are tested in order. Each time a defective memory cell is detected by the test, error pattern information is updated based on a relative arrangement relationship between a plurality of defective memory cells, and error address information is updated based on the addresses of at least part of the plurality of defective memory cells. According to the present invention, it is possible to significantly reduce the storage capacity of the analysis memory. This allows the implementation of the analysis memory itself in the semiconductor device, in which case external testers need not include the analysis memory.
摘要:
In accordance with a bandgap circuit and a method of starting the bandgap circuit, a start signal is continuously supplied to a differential amplifier circuit to start up the differential amplifier circuit that controls a bandgap core circuit until the differential amplifier circuit has started up, and then the supply of the start signal to the differential amplifier circuit is discontinued after the differential amplifier circuit has started up.
摘要:
To improve the access efficiency of a semiconductor memory that includes a plurality of memory chips. Based on a layer address, a bank address, and a row address received in synchronization with a row command, and a layer address, a bank address, and a column address received in synchronization with a column command, a memory cell selected by the row address and column address in a bank selected by the bank address included in a core chip selected by the chip address is accessed. This can increase the number of banks recognizable to a controller, thereby improving the memory access efficiency of the semiconductor device which includes the plurality of memory chips.
摘要:
A timing control circuit DLY1 receives clock signal CKa with period T1 and activation signal ACT and outputs fine timing signal FT with delay of m*T1+tda measured from the clock signal where m denotes a non-negative integer and tda denotes delay in the analog delay element. The timing control circuit DLY1 comprises a coarse delay circuit CD and a fine delay circuit FD. The coarse delay circuit CD comprises a counter for counting a rising edge of the clock signal CKa after receiving activation signal ACT and outputs coarse timing signal CT with delay of m*T1 measured from a rising edge of the clock signal CKa. The fine delay circuit FD comprises a plurality of analog delay elements and outputs fine delay timing signal FT with delay of tda measured from the coarse timing signal CT. Variation in delay of timing signal is reduced.
摘要:
Disclosed is a semiconductor device in which In case a data group output from a first output pin in a first word configuration is output from the first output pin and a second output pin in a second word configuration, and a data group output from a third output pin in a first word configuration is output from the third output pin and a fourth output pin in a second word configuration, the second output pin is arranged adjacent to the first output pin, and the fourth output pin is arranged adjacent to the third output pin.
摘要:
An improved buffer circuit arrangement is provided which is particularly useful for semiconductor integrated circuit semiconductor memories and microprocessors. The buffer circuit is capable of switching large loads in various types of LSIs, and features a low noise and high speed circuit operation. This is accomplished by a parallel connection of output transistors in an output buffer circuit, and by differentiating the starting time of operation between the output transistors connected in parallel without using a delay circuit. For example, differentiating the starting times can be achieved by either providing the transistors with different characteristics from one another or the driving circuits with different characteristics from one another. Another aspect of the circuit is the provision of a two-level preset arrangement which presets the output node of the circuit to predetermined values before the input signals are applied.
摘要:
An isocyanate prepolymer represented by the formula ##STR1## wherein n is an integer of 1 to 6, R', R" and R'", which may be the same or different, each represents a divalent aliphatic, araliphatic, aromatic or acyclic group which may contain a ##STR2## bond, and R" and R'" may contain a ##STR3## bond, and a process for producing the same.