公开(公告)号：US20060170113A1

公开(公告)日：2006-08-03

申请号：US11334373

申请日：2006-01-19

申请人： Takekazu Tanaka ,  Ikuo Komatsu

发明人： Takekazu Tanaka ,  Ikuo Komatsu

IPC分类号： H01L23/48

CPC分类号： H01L23/49822 ,  H01L23/13 ,  H01L23/49816 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05568 ,  H01L2224/16225 ,  H01L2224/32245 ,  H01L2224/73253 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/12044 ,  H01L2924/13091 ,  H01L2924/15153 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/15321 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2224/05541 ,  H01L2224/05005 ,  H01L2224/05599

摘要： A technology providing an improvement in the durability in the condition of changing the temperature, while ensuring characteristics such as the applicability to applications utilizing larger electric current, lower resistance and the like can be achieved. A semiconductor device 100 includes a ceramic multiple-layered interconnect substrate 120, a silicon chip 110 that is flip-bonded to a chip-carrying region of the ceramic multiple-layered interconnect substrate 120, and an external connecting bumps 161 and an external connecting bumps 163, which are provided in the side that the silicon chip 110 of the ceramic multiple-layered interconnect substrate 120 is carried. The silicon chip 110 includes a front surface electrode and a back surface electrode. The ceramic multiple-layered interconnect substrate 120 includes an interconnect layer composed of a conductive material, and the interconnect layer composes a multiple-layered interconnect layer provided on a front surface and in an interior of the ceramic multiple-layered interconnect substrate 120. The front surface electrode of the silicon chip is electrically connected to the external connecting bump 161 and the external connecting bump 163 through the multiple-layered interconnects in the multiple-layered interconnect layer.

摘要翻译： 可以实现在改变温度的条件下提高耐久性的技术，同时确保诸如对使用较大电流，较低电阻等的应用的适用性等特性。 半导体器件100包括陶瓷多层互连衬底120，与陶瓷多层互连衬底120的芯片承载区域翻转接合的硅芯片110以及外部连接凸块161和外部连接凸块 163设置在陶瓷多层互连基板120的硅芯片110的一侧。 硅芯片110包括前表面电极和背面电极。 陶瓷多层互连基板120包括由导电材料构成的互连层，并且互连层构成设置在陶瓷多层互连基板120的前表面和内部的多层互连层。 硅芯片的前表面电极通过多层互连层中的多层互连电连接到外部连接凸块161和外部连接凸块163。

公开(公告)号：US07723837B2

公开(公告)日：2010-05-25

申请号：US11334373

申请日：2006-01-19

申请人： Takekazu Tanaka ,  Ikuo Komatsu

发明人： Takekazu Tanaka ,  Ikuo Komatsu

IPC分类号： H01L23/02

CPC分类号： H01L23/49822 ,  H01L23/13 ,  H01L23/49816 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05568 ,  H01L2224/16225 ,  H01L2224/32245 ,  H01L2224/73253 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/12044 ,  H01L2924/13091 ,  H01L2924/15153 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/15321 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2224/05541 ,  H01L2224/05005 ,  H01L2224/05599

摘要： A technology providing an improvement in the durability in the condition of changing the temperature, while ensuring characteristics such as the applicability to applications utilizing larger electric current, lower resistance and the like can be achieved. A semiconductor device 100 includes a ceramic multiple-layered interconnect substrate 120, a silicon chip 110 that is flip-bonded to a chip-carrying region of the ceramic multiple-layered interconnect substrate 120, and an external connecting bumps 161 and an external connecting bumps 163, which are provided in the side that the silicon chip 110 of the ceramic multiple-layered interconnect substrate 120 is carried. The silicon chip 110 includes a front surface electrode and a back surface electrode. The ceramic multiple-layered interconnect substrate 120 includes an interconnect layer composed of a conductive material, and the interconnect layer composes a multiple-layered interconnect layer provided on a front surface and in an interior of the ceramic multiple-layered interconnect substrate 120. The front surface electrode of the silicon chip is electrically connected to the external connecting bump 161 and the external connecting bump 163 through the multiple-layered interconnects in the multiple-layered interconnect layer.

摘要翻译： 可以实现在改变温度的条件下提高耐久性的技术，同时确保诸如对使用较大电流，较低电阻等的应用的适用性等特性。 半导体器件100包括陶瓷多层互连衬底120，与陶瓷多层互连衬底120的芯片承载区域翻转接合的硅芯片110以及外部连接凸块161和外部连接凸块 163设置在陶瓷多层互连基板120的硅芯片110的一侧。 硅芯片110包括前表面电极和背面电极。 陶瓷多层互连基板120包括由导电材料构成的互连层，并且互连层构成设置在陶瓷多层互连基板120的前表面和内部的多层互连层。前端 硅芯片的表面电极通过多层互连层中的多层互连电连接到外部连接凸块161和外部连接凸块163。

公开(公告)号：US08395261B2

公开(公告)日：2013-03-12

申请号：US13530383

申请日：2012-06-22

申请人： Takekazu Tanaka ,  Kouhei Takahashi ,  Seiji Okabe

发明人： Takekazu Tanaka ,  Kouhei Takahashi ,  Seiji Okabe

IPC分类号： H01L23/28

CPC分类号： H01L24/05 ,  H01L23/4952 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/85 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05166 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48453 ,  H01L2224/48465 ,  H01L2224/48507 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2224/48824 ,  H01L2224/48847 ,  H01L2224/73265 ,  H01L2224/85205 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01203 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/20755 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2924/013 ,  H01L2924/00012 ,  H01L2924/2075 ,  H01L2924/20754 ,  H01L2924/01006

摘要： A semiconductor device includes an electrode pad provided on a semiconductor chip, the electrode pad includes aluminum (Al) of between 50% wt. and 99.9% wt. and further includes copper (Cu), a coupling ball that primarily includes Cu, the coupling ball being coupled to the electrode pad so that a CuAl2 layer, a CuAl layer, a layer including one of Cu9Al4 and Cu3Al2, and the coupling ball are vertically stacked in this order on the electrode pad, and an encapsulating resin that includes a halogen of less than or equal to 1000 ppm, the encapsulating resin covering at least the electrode pad and a junction between the electrode pad and the coupling ball.

摘要翻译： 半导体器件包括设置在半导体芯片上的电极焊盘，所述电极焊盘包括铝（Al）的50重量％ 和99.9％wt。 并且还包括铜（Cu），主要包括Cu的耦合球，耦合球耦合到电极焊盘，使得CuAl 2层，CuAl层，包括Cu9Al4和Cu3Al2中的一个的层以及耦合球是垂直的 以及包含小于或等于1000ppm的卤素的封装树脂，至少覆盖电极焊盘的封装树脂和电极焊盘与联接球之间的连接点。

公开(公告)号：US20050032271A1

公开(公告)日：2005-02-10

申请号：US10936795

申请日：2004-09-09

申请人： Takekazu Tanaka

发明人： Takekazu Tanaka

IPC分类号： H01L23/48 ,  H01L23/31 ,  H01L23/495 ,  H01L23/50 ,  H01L21/44 ,  H01L21/50

CPC分类号： H01L24/97 ,  H01L23/3107 ,  H01L23/49548 ,  H01L23/49562 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/48464 ,  H01L2224/49171 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/181 ,  Y10S438/977 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： A lead frame of the present invention includes a pair of base portions having a substantially flat bottom each. An island portion and electrode portions are partly connected to the tops of the base portions. The lead frame needs a minimum of production cost and promotes dense mounting of semiconductor devices to a circuit board.

摘要翻译： 本发明的引线框架包括一对具有大致平坦的底部的基部。 岛部分和电极部分部分地连接到基部的顶部。 引线框需要最小的生产成本，并促进将半导体器件密集安装到电路板上。

公开(公告)号：US07449370B2

公开(公告)日：2008-11-11

申请号：US11542218

申请日：2006-10-04

申请人： Takekazu Tanaka

发明人： Takekazu Tanaka

IPC分类号： H01L21/00 ,  H01L23/495 ,  H01R9/00

CPC分类号： H01L24/91 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/84 ,  H01L2224/0603 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/73221 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01058 ,  H01L2924/01073 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2924/00012 ,  H01L2224/37099

摘要： In a semiconductor package including at least one plate-like mount, a semiconductor chip has at least one electrode formed on a top surface thereof, and is mounted on the plate-like mount such that a bottom surface of the semiconductor chip is in contact with the plate-like mount. The semiconductor package also includes at least one lead element having an outer portion arranged to be flush with the plate-like mount, and an inner portion deformed and shaped to overhang the semiconductor chip such that an inner end of the lead element is spaced apart from the top surface of the semiconductor chip. The semiconductor package further includes a bonding-wire element bonded at ends thereof to the electrode of the semiconductor chip and the inner end of the lead element, an enveloper sealing and encapsulating the plate-like mount, the semiconductor chip, the inner portion of the lead element, and the bonding-wire element.

摘要翻译： 在包括至少一个板状安装件的半导体封装中，半导体芯片具有形成在其顶表面上的至少一个电极，并且安装在板状安装件上，使得半导体芯片的底表面与 板状安装座。 所述半导体封装还包括至少一个引线元件，所述引线元件具有布置为与所述板状安装座齐平的外部部分，以及内部部分，所述内部部分变形并成形为使所述半导体芯片悬垂，使得所述引线元件的内端与 半导体芯片的顶面。 半导体封装还包括将端部接合到半导体芯片的电极和引线元件的内端的接合线元件，密封并封装板状安装件的加热器，半导体芯片，内部部分 引线元件和接合线元件。

公开(公告)号：US20080203568A1

公开(公告)日：2008-08-28

申请号：US12068191

申请日：2008-02-04

申请人： Takekazu Tanaka ,  Kouhei Takahashi ,  Seiji Okabe

发明人： Takekazu Tanaka ,  Kouhei Takahashi ,  Seiji Okabe

IPC分类号： H01L23/49

CPC分类号： H01L24/05 ,  H01L23/4952 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/85 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05166 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48453 ,  H01L2224/48465 ,  H01L2224/48507 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2224/48824 ,  H01L2224/48847 ,  H01L2224/73265 ,  H01L2224/85205 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01203 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/20755 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2924/013 ,  H01L2924/00012 ,  H01L2924/2075 ,  H01L2924/20754 ,  H01L2924/01006

摘要： An improved reliability in a region of a junction between a bonding wire and an electrode pad at higher temperature is achieved. A semiconductor device 100 includes a semiconductor chip 102, AlCu pads 107, which are provided in the semiconductor chip 102 and which contain Al as a major constituent and additionally contain copper (Cu), and CuP wires 111, which function as coupling members for connecting inner leads 117 provided outside of the semiconductor chip 102 with the semiconductor chip 102, and primarily contain Cu. The AlCu pads 107 and the CuP wires 111 are encapsulated with an encapsulating resin 115 that contains substantially no halogen.

摘要翻译： 实现了在较高温度下接合线和电极焊盘之间的接合区域的可靠性的改善。 半导体器件100包括设置在半导体芯片102中并且包含Al作为主要成分并另外包含铜（Cu）的半导体芯片102，AlCu焊盘107以及用作连接的耦合部件的CuP线111 在半导体芯片102的外侧设置有半导体芯片102的内部引线117，并且主要包含Cu。 AlCu焊盘107和CuP导线111用基本上不含卤素的封装树脂115封装。

公开(公告)号：US07224045B2

公开(公告)日：2007-05-29

申请号：US10869949

申请日：2004-06-18

申请人： Yukinori Tabira ,  Takekazu Tanaka

发明人： Yukinori Tabira ,  Takekazu Tanaka

IPC分类号： H01L23/495

CPC分类号： H01L24/35 ,  H01L21/565 ,  H01L23/3107 ,  H01L23/49548 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/37 ,  H01L24/40 ,  H01L24/48 ,  H01L24/97 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/16245 ,  H01L2224/32245 ,  H01L2224/371 ,  H01L2224/40245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73253 ,  H01L2224/83801 ,  H01L2224/84205 ,  H01L2224/84801 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01058 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10253 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A leadless type semiconductor package includes a plate-like mount, and at least one semiconductor chip mounted on the plate-like mount such that a bottom surface of the semiconductor chip is secured to the plate-like mount, and the semiconductor chip has at least one electrode pad formed on a top surface thereof. The package further includes at least one flat electrode electrically connected to the electrode pad, and a molded resin enveloper for completely sealing and encapsulating the semiconductor chip. The molded resin enveloper further partially seals and encapsulates the flat electrode such that a part of the flat electrode is exposed as an outer electrode pad on a top surface of the molded resin enveloper.

摘要翻译： 无引线型半导体封装包括板状安装座，以及安装在板状安装座上的至少一个半导体芯片，使得半导体芯片的底面固定在板状安装座上，半导体芯片至少具有 一个电极焊盘形成在其顶表面上。 该封装还包括电连接到电极焊盘的至少一个平板电极和用于完全密封和封装半导体芯片的模制树脂封装件。 模制树脂涂层器进一步部分地密封和封装平坦电极，使得平坦电极的一部分作为外部电极焊盘暴露在模制树脂涂层的顶表面上。

公开(公告)号：US08334596B2

公开(公告)日：2012-12-18

申请号：US13064611

申请日：2011-04-04

申请人： Takekazu Tanaka ,  Kouhei Takahashi ,  Seiji Okabe

发明人： Takekazu Tanaka ,  Kouhei Takahashi ,  Seiji Okabe

IPC分类号： H01L23/48

CPC分类号： H01L24/05 ,  H01L23/4952 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/85 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05166 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48453 ,  H01L2224/48465 ,  H01L2224/48507 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2224/48824 ,  H01L2224/48847 ,  H01L2224/73265 ,  H01L2224/85205 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01203 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/20755 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2924/013 ,  H01L2924/00012 ,  H01L2924/2075 ,  H01L2924/20754 ,  H01L2924/01006

摘要： A semiconductor device includes an electrode pad provided on a semiconductor chip, in which the electrode pad includes aluminum (Al) as a major constituent and further including copper (Cu), a coupling ball primarily including Cu, the coupling ball is coupled to the electrode pad such that a plurality of layers of Cu and Al alloys are formed at a junction between the electrode pad and the coupling ball, and an encapsulating resin including a halogen of less than or equal to 1000 ppm, the encapsulating resin covering at least the electrode pad and the junction between the electrode pad and the coupling ball. A dimensional area of the plurality of layers of Cu and Al alloys is equal to or larger than 50% of a dimensional area of the junction between the electrode pad and the coupling ball. The plurality of layers of Cu and Al alloys includes a CuAl2 layer, a CuAl layer formed on the CuAl2 layer, and a layer including one of Cu9Al4 and Cu3Al2 formed on the CuAl layer.

摘要翻译： 半导体器件包括设置在半导体芯片上的电极焊盘，其中电极焊盘包括铝（Al）作为主要成分，并且还包括铜（Cu），主要包括Cu的耦合球，耦合球耦合到电极 衬垫，使得在电极焊盘和耦合球之间的接合处形成多个Cu和Al合金层，以及包含小于或等于1000ppm的卤素的封装树脂，该封装树脂至少覆盖电极 焊盘和电极焊盘与耦合球之间的连接处。 Cu和Al合金的多层的尺寸面积等于或大于电极焊盘和联接球之间的接合部的尺寸面积的50％。 多层Cu和Al合金包括CuAl2层，形成在CuAl2层上的CuAl层，以及包含在CuAl层上形成的Cu9Al4和Cu3Al2之一的层。

公开(公告)号：US20110241204A1

公开(公告)日：2011-10-06

申请号：US13064611

申请日：2011-04-04

申请人： Takekazu Tanaka ,  Kouhei Takahashi ,  Seiji Okabe

发明人： Takekazu Tanaka ,  Kouhei Takahashi ,  Seiji Okabe

IPC分类号： H01L23/498

CPC分类号： H01L24/05 ,  H01L23/4952 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/85 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05166 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48453 ,  H01L2224/48465 ,  H01L2224/48507 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2224/48824 ,  H01L2224/48847 ,  H01L2224/73265 ,  H01L2224/85205 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01203 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/20755 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2924/013 ,  H01L2924/00012 ,  H01L2924/2075 ,  H01L2924/20754 ,  H01L2924/01006

摘要： A semiconductor device includes an electrode pad provided on a semiconductor chip, in which the electrode pad includes aluminum (Al) as a major constituent and further including copper (Cu), a coupling ball primarily including Cu, the coupling ball is coupled to the electrode pad such that a plurality of layers of Cu and Al alloys are formed at a junction between the electrode pad and the coupling ball, and an encapsulating resin including a halogen of less than or equal to 1000 ppm, the encapsulating resin covering at least the electrode pad and the junction between the electrode pad and the coupling ball. A dimensional area of the plurality of layers of Cu and Al alloys is equal to or larger than 50% of a dimensional area of the junction between the electrode pad and the coupling ball. The plurality of layers of Cu and Al alloys includes a CuAl2 layer, a CuAl layer formed on the CuAl2 layer, and a layer including one of Cu9Al4 and Cu3Al2 formed on the CuAl layer.

摘要翻译： 半导体器件包括设置在半导体芯片上的电极焊盘，其中电极焊盘包括铝（Al）作为主要成分，并且还包括铜（Cu），主要包括Cu的耦合球，耦合球耦合到电极 衬垫，使得在电极焊盘和耦合球之间的接合处形成多个Cu和Al合金层，以及包含小于或等于1000ppm的卤素的封装树脂，该封装树脂至少覆盖电极 焊盘和电极焊盘与耦合球之间的连接处。 Cu和Al合金的多层的尺寸面积等于或大于电极焊盘和联接球之间的接合部的尺寸面积的50％。 多层Cu和Al合金包括CuAl2层，形成在CuAl2层上的CuAl层，以及包含在CuAl层上形成的Cu9Al4和Cu3Al2之一的层。

公开(公告)号：US07550829B2

公开(公告)日：2009-06-23

申请号：US11892093

申请日：2007-08-20

申请人： Takekazu Tanaka

发明人： Takekazu Tanaka

IPC分类号： H01L23/495

CPC分类号： H01L23/492 ,  H01L23/13 ,  H01L24/36 ,  H01L24/40 ,  H01L2224/32245 ,  H01L2224/40225 ,  H01L2224/73153 ,  H01L2224/73253 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01057 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2924/00014

摘要： A package for an electronic component including a chip mounting area mounting a semiconductor chip in a hollow part of a metal plate and a plurality of connection electrodes to be connected to a substrate. The plurality of connection electrodes are formed in opposite sides of the rectangular metal plate and arranged asymmetrically with respect to a perpendicular bisector of the opposite sides.

摘要翻译： 一种用于电子部件的封装，包括将半导体芯片安装在金属板的中空部分中的芯片安装区域和要连接到基板的多个连接电极。 多个连接电极形成在矩形金属板的相对侧并且相对于相对侧的垂直平分线非对称地布置。