公开(公告)号：US06777814B2

公开(公告)日：2004-08-17

申请号：US10170588

申请日：2002-06-14

申请人： Toshihiro Iwasaki ,  Michitaka Kimura ,  Keiichiro Wakamiya ,  Yasumichi Hatanaka

发明人： Toshihiro Iwasaki ,  Michitaka Kimura ,  Keiichiro Wakamiya ,  Yasumichi Hatanaka

IPC分类号： H01L2348

CPC分类号： H01L24/81 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/1134 ,  H01L2224/13111 ,  H01L2224/16 ,  H01L2224/73204 ,  H01L2224/81801 ,  H01L2224/83192 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H03H3/08

摘要： A semiconductor device includes a semiconductor chip, and a circuit substrate disposed such that the circuit substrate faces the semiconductor chip and is electrically connected to the semiconductor chip through a connection conductor. A pad electrode and a terminal electrode are formed on a surface of the semiconductor chip and a surface of the circuit substrate, respectively. The connection conductor is connected between the pad electrode and the terminal electrode. The surface of the semiconductor and the surface of the circuit substrate face each other. A conductive dummy pattern is formed on the facing surface of the semiconductor chip or the circuit substrate. A space between the facing surfaces is filled with nonconductive resin. With this arrangement, it is possible to make uniform the temperature distribution between the facing surfaces, thereby making the temperature and the viscosity of the nonconductive resin uniform to reduce attenuation of ultrasonic waves.

摘要翻译： 半导体器件包括半导体芯片和电路基板，电路基板设置成电路基板面向半导体芯片，并通过连接导体电连接到半导体芯片。 在半导体芯片的表面和电路基板的表面上分别形成焊盘电极和端子电极。 连接导体连接在焊盘电极和端子电极之间。 半导体的表面和电路基板的表面彼此面对。 在半导体芯片或电路基板的相对表面上形成导电虚设图形。 面对表面之间的空间填充有非导电树脂。 通过这种布置，可以使相对表面之间的温度分布均匀，从而使非导电树脂的温度和粘度均匀，以减少超声波的衰减。

公开(公告)号：US06756686B2

公开(公告)日：2004-06-29

申请号：US10224342

申请日：2002-08-21

申请人： Toshihiro Iwasaki ,  Keiichiro Wakamiya ,  Michitaka Kimura ,  Yasumichi Hatanaka

发明人： Toshihiro Iwasaki ,  Keiichiro Wakamiya ,  Michitaka Kimura ,  Yasumichi Hatanaka

IPC分类号： H01L2348

CPC分类号： H01L23/49838 ,  H01L23/16 ,  H01L24/81 ,  H01L2224/05026 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/1134 ,  H01L2224/13144 ,  H01L2224/81136 ,  H01L2224/81206 ,  H01L2224/81801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/00014

摘要： A semiconductor device includes a first substrate, a second substrate, a plurality of conductors, and supporting members. The first substrate has a plurality of electrode portions disposed on one side thereof. The second substrate has a plurality of electrode portions disposed on one side thereof. The conductors are for connecting the plurality of electrode portions of the first substrate to the plurality of electrode portions of the second substrate. The supporting members supporting the first substrate and the second substrate are disposed on a location where resonance caused by ultrasonic oscillation externally supplied is restrained in the state where the first substrate is connected to the second substrate. The supporting members prevent irregular oscillation and resonance caused by the ultrasonic oscillation.

摘要翻译： 半导体器件包括第一衬底，第二衬底，多个导体和支撑构件。 第一基板具有设置在其一侧的多个电极部。 第二基板具有设置在其一侧的多个电极部。 导体用于将第一基板的多个电极部分连接到第二基板的多个电极部分。 支撑第一基板和第二基板的支撑构件设置在在第一基板连接到第二基板的状态下被限制在由外部提供的超声波振荡引起的共振的位置。 支撑构件防止超声波振荡引起的不规则振荡和共振。

公开(公告)号：US06677677B2

公开(公告)日：2004-01-13

申请号：US10106198

申请日：2002-03-27

申请人： Michitaka Kimura ,  Toshihiro Iwasaki ,  Yasumichi Hatanaka ,  Keiichiro Wakamiya

发明人： Michitaka Kimura ,  Toshihiro Iwasaki ,  Yasumichi Hatanaka ,  Keiichiro Wakamiya

IPC分类号： H01L2348

CPC分类号： H01L24/81 ,  H01L23/50 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/10135 ,  H01L2224/10165 ,  H01L2224/14 ,  H01L2224/16 ,  H01L2224/16237 ,  H01L2224/17517 ,  H01L2224/81136 ,  H01L2224/81139 ,  H01L2224/8114 ,  H01L2224/81141 ,  H01L2224/81801 ,  H01L2924/01005 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/351 ,  H01L2924/00

摘要： The semiconductor device has a flip chip structure. The chip is electrically connected to the chip mounting member via function bumps provided on the chip. Dummy bumps acting against a local bending force of the chip are interposed between the chip and the chip mounting member.

摘要翻译： 半导体器件具有倒装芯片结构。 芯片通过设置在芯片上的功能凸块与芯片安装部件电连接。 作用在芯片的局部弯曲力的虚拟凸起插入在芯片和芯片安装部件之间。

公开(公告)号：US06404059B1

公开(公告)日：2002-06-11

申请号：US09614175

申请日：2000-07-11

申请人： Toshihiro Iwasaki ,  Keiichiro Wakamiya

发明人： Toshihiro Iwasaki ,  Keiichiro Wakamiya

IPC分类号： H01L2348

CPC分类号： H01L21/563 ,  H01L23/3107 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05572 ,  H01L2224/05573 ,  H01L2224/056 ,  H01L2224/16237 ,  H01L2224/32225 ,  H01L2224/4824 ,  H01L2224/48465 ,  H01L2224/73203 ,  H01L2224/73215 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/00 ,  H01L2224/05005 ,  H01L2224/05541 ,  H01L2924/00014 ,  H01L2224/05124

摘要： A semiconductor device comprises an insulated circuit board which includes a terminal electrode disposed on the rear surface or at a plane between the rear surface and the front surface thereof. An opening is formed in the insulating circuit board in such a manner as to reach the terminal electrode. A semiconductor substrate including an electrode pad is mounted on the insulated circuit board in such a manner that the electrode pad faces to the terminal electrode. A non-conductive resin is interposed in a gap between the semiconductor substrate and the insulated circuit board. The electrode pad on the semiconductor substrate is electrically connected to the terminal electrode via a connecting conductor inserted in the opening.

摘要翻译： 半导体器件包括绝缘电路板，​​其包括设置在后表面上或在其后表面和其前表面之间的平面处的端子电极。 在绝缘电路板上形成开口，以便到达端子电极。 包括电极焊盘的半导体基板以电极焊盘面对端子电极的方式安装在绝缘电路板上。 在半导体衬底和绝缘电路板之间的间隙中插入非导电树脂。 半导体衬底上的电极焊盘通过插入在开口中的连接导体与端子电极电连接。

公开(公告)号：US20070141750A1

公开(公告)日：2007-06-21

申请号：US11637097

申请日：2006-12-12

申请人： Toshihiro Iwasaki ,  Shiori Idaka ,  Yasumichi Hatanaka

发明人： Toshihiro Iwasaki ,  Shiori Idaka ,  Yasumichi Hatanaka

IPC分类号： H01L21/00

CPC分类号： H01L25/0657 ,  H01L24/11 ,  H01L24/13 ,  H01L24/81 ,  H01L24/97 ,  H01L25/50 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05184 ,  H01L2224/056 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/1147 ,  H01L2224/1181 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13644 ,  H01L2224/1403 ,  H01L2224/14051 ,  H01L2224/141 ,  H01L2224/16058 ,  H01L2224/16145 ,  H01L2224/73204 ,  H01L2224/81013 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/8182 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/19041 ,  H01L2224/81 ,  H01L2924/00014 ,  H01L2224/13099

摘要： A method of manufacturing a semiconductor device includes a first step of forming solder film on metal posts of a mother chip, a second step of forming solder balls after the first step by printing a solder paste on the mother chip and heating the mother chip so that the solder paste is ref lowed, a third step of bonding the metal posts of the mother chip and metal posts of a daughter chip to each other in a thermocompression bonding manner by means of the solder film after the second step, and a fourth step of flip-chip-connecting the mother chip on a circuit substrate by using the solder balls. In the second step, the mother chip is heated in a nitrogen atmosphere in which the oxygen concentration is 500 ppm or less.

摘要翻译： 一种制造半导体器件的方法包括：在母芯片的金属柱上形成焊料膜的第一步骤;第一步骤之后，通过在母芯片上印刷焊膏并加热母芯片，形成焊球的第二步骤， 焊膏被降低，第三步骤是通过在第二步骤之后的焊料膜以热压接方式将母芯片的金属柱和子芯片的金属柱彼此接合，并且第四步骤 通过使用焊球将母芯片倒装芯片连接在电路基板上。 在第二步中，在氧浓度为500ppm以下的氮气氛中加热母体芯片。

公开(公告)号：US07951699B2

公开(公告)日：2011-05-31

申请号：US11637097

申请日：2006-12-12

申请人： Toshihiro Iwasaki ,  Shiori Idaka ,  Yasumichi Hatanaka

发明人： Toshihiro Iwasaki ,  Shiori Idaka ,  Yasumichi Hatanaka

IPC分类号： H01L21/603 ,  H01L33/62

CPC分类号： H01L25/0657 ,  H01L24/11 ,  H01L24/13 ,  H01L24/81 ,  H01L24/97 ,  H01L25/50 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05184 ,  H01L2224/056 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/1147 ,  H01L2224/1181 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13644 ,  H01L2224/1403 ,  H01L2224/14051 ,  H01L2224/141 ,  H01L2224/16058 ,  H01L2224/16145 ,  H01L2224/73204 ,  H01L2224/81013 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/8182 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/19041 ,  H01L2224/81 ,  H01L2924/00014 ,  H01L2224/13099

摘要： A method of manufacturing a semiconductor device includes a first step of forming solder film on metal posts of a mother chip, a second step of forming solder balls after the first step by printing a solder paste on the mother chip and heating the mother chip so that the solder paste is ref lowed, a third step of bonding the metal posts of the mother chip and metal posts of a daughter chip to each other in a thermocompression bonding manner by means of the solder film after the second step, and a fourth step of flip-chip-connecting the mother chip on a circuit substrate by using the solder balls. In the second step, the mother chip is heated in a nitrogen atmosphere in which the oxygen concentration is 500 ppm or less.

摘要翻译： 一种制造半导体器件的方法包括：在母芯片的金属柱上形成焊料膜的第一步骤;第一步骤之后，通过在母芯片上印刷焊膏并加热母芯片，形成焊球的第二步骤， 焊膏被降低，第三步骤是通过在第二步骤之后的焊料膜以热压接方式将母芯片的金属柱和子芯片的金属柱彼此接合，并且第四步骤 通过使用焊球将母芯片倒装芯片连接在电路基板上。 在第二步中，在氧浓度为500ppm以下的氮气氛中加热母体芯片。

公开(公告)号：US07443036B2

公开(公告)日：2008-10-28

申请号：US11241986

申请日：2005-10-04

申请人： Toshihiro Iwasaki ,  Michitaka Kimura ,  Kozo Harada

发明人： Toshihiro Iwasaki ,  Michitaka Kimura ,  Kozo Harada

IPC分类号： H01L23/48

CPC分类号： H01L25/0657 ,  H01L21/563 ,  H01L23/3114 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05171 ,  H01L2224/05184 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/16237 ,  H01L2224/73203 ,  H01L2224/75251 ,  H01L2224/75252 ,  H01L2224/81013 ,  H01L2224/81192 ,  H01L2224/81203 ,  H01L2224/81205 ,  H01L2224/81801 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/15151 ,  H01L2924/15159 ,  H01L2924/1532 ,  H01L2924/19041 ,  H01L2924/19104 ,  H01L2924/19105 ,  H01L2924/00014

摘要： The manufacturing method of the semiconductor device of the present invention has a step forming solder balls on the circuit face of a mother chip, a step making flip chip bonding of the daughter chip after the step forming solder balls on the circuit face of the mother chip, and a step making flip chip bonding of the mother chip on a circuit board using the solder balls.

摘要翻译： 本发明的半导体器件的制造方法具有在母芯片的电路面上形成焊球的步骤，在母芯片的电路面上形成焊球后的子芯片的倒装芯片接合工序 以及使用焊料球将母芯片在电路板上进行倒装芯片接合的步骤。

公开(公告)号：US07745258B2

公开(公告)日：2010-06-29

申请号：US12172812

申请日：2008-07-14

申请人： Toshihiro Iwasaki ,  Michitaka Kimura ,  Kozo Harada

发明人： Toshihiro Iwasaki ,  Michitaka Kimura ,  Kozo Harada

IPC分类号： H01L21/44

CPC分类号： H01L25/0657 ,  H01L21/563 ,  H01L23/3114 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05171 ,  H01L2224/05184 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/16237 ,  H01L2224/73203 ,  H01L2224/75251 ,  H01L2224/75252 ,  H01L2224/81013 ,  H01L2224/81192 ,  H01L2224/81203 ,  H01L2224/81205 ,  H01L2224/81801 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/15151 ,  H01L2924/15159 ,  H01L2924/1532 ,  H01L2924/19041 ,  H01L2924/19104 ,  H01L2924/19105 ,  H01L2924/00014

摘要： A manufacturing method of the semiconductor device including a step of forming solder balls on the circuit face of a mother chip, a step of making flip chip bonding of the daughter chip after the step of forming solder balls on the circuit face of the mother chip, and a step of making flip chip bonding of the mother chip on a circuit board using the solder balls.

摘要翻译： 一种半导体器件的制造方法，包括在母芯片的电路面上形成焊球的工序，在母芯片的电路面上形成焊球的步骤之后，对子芯片进行倒装芯片接合的工序， 以及使用焊料球将母芯片在电路板上进行倒装芯片接合的步骤。

公开(公告)号：US20080274590A1

公开(公告)日：2008-11-06

申请号：US12172812

申请日：2008-07-14

申请人： Toshihiro Iwasaki ,  Michitaka Kimura ,  Kozo Harada

发明人： Toshihiro Iwasaki ,  Michitaka Kimura ,  Kozo Harada

IPC分类号： H01L21/60

CPC分类号： H01L25/0657 ,  H01L21/563 ,  H01L23/3114 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05171 ,  H01L2224/05184 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/16237 ,  H01L2224/73203 ,  H01L2224/75251 ,  H01L2224/75252 ,  H01L2224/81013 ,  H01L2224/81192 ,  H01L2224/81203 ,  H01L2224/81205 ,  H01L2224/81801 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/15151 ,  H01L2924/15159 ,  H01L2924/1532 ,  H01L2924/19041 ,  H01L2924/19104 ,  H01L2924/19105 ,  H01L2924/00014

摘要： A manufacturing method of the semiconductor device including a step of forming solder balls on the circuit face of a mother chip, a step of making flip chip bonding of the daughter chip after the step of forming solder balls on the circuit face of the mother chip, and a step of making flip chip bonding of the mother chip on a circuit board using the solder balls.

摘要翻译： 一种半导体器件的制造方法，包括在母芯片的电路面上形成焊球的工序，在母芯片的电路面上形成焊球的步骤之后，对子芯片进行倒装芯片接合的工序， 以及使用焊料球将母芯片在电路板上进行倒装芯片接合的步骤。

公开(公告)号：US06462425B1

公开(公告)日：2002-10-08

申请号：US09429635

申请日：1999-10-29

申请人： Toshihiro Iwasaki ,  Masatoshi Yasunaga ,  Satoshi Yamada ,  Kozo Harada ,  Michitaka Kimura

发明人： Toshihiro Iwasaki ,  Masatoshi Yasunaga ,  Satoshi Yamada ,  Kozo Harada ,  Michitaka Kimura

IPC分类号： H01L2940

CPC分类号： H01L21/563 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/051 ,  H01L2224/05572 ,  H01L2224/1134 ,  H01L2224/131 ,  H01L2224/13109 ,  H01L2224/13113 ,  H01L2224/13118 ,  H01L2224/1312 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13164 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2224/13099 ,  H01L2924/01014 ,  H01L2924/00 ,  H01L2224/05599

摘要： A semiconductor device allowing a mounting of a semiconductor substrate with narrow electrode pad interval on an insulated circuit board while securing a favorable insulation characteristic and a manufacturing method thereof are obtained. The semiconductor device includes an electrode pad formed on a semiconductor substrate; a connecting underlying metal film connected to the electrode pad; a connecting conductor establishing electrical conduction between the connecting underlying metal film and a terminal electrode on an insulated circuit board; and non-conductive resin surrounding the connecting conductor and filling a gap between the substrate and the insulated circuit board. Here, the connecting underlying metal film is not covered by the connecting conductor at least in a peripheral region including an outer peripheral portion thereof

摘要翻译： 获得能够在确保良好的绝缘特性的同时将具有窄电极焊盘间隔的半导体衬底安装在绝缘电路板上的半导体器件及其制造方法。 半导体器件包括形成在半导体衬底上的电极焊盘; 连接到电极焊盘的连接底层金属膜; 连接导体，其在连接的底层金属膜和绝缘电路板上的端子电极之间建立导电; 以及围绕连接导体的非导电树脂，并填充衬底和绝缘电路板之间的间隙。 这里，至少在包括其外周部分的周边区域中，连接基底金属膜不被连接导体覆盖