公开(公告)号：US07566649B2

公开(公告)日：2009-07-28

申请号：US11858147

申请日：2007-09-20

申请人： William E. Bernier ,  Tien-Jen Cheng ,  Marie S. Cole ,  David E. Eichstadt ,  Mukta G. Farooq ,  John A. Fitzsimmons ,  Lewis S. Goldmann ,  John U. Knickerbocker ,  Tasha E. Lopez ,  David J. Welsh

发明人： William E. Bernier ,  Tien-Jen Cheng ,  Marie S. Cole ,  David E. Eichstadt ,  Mukta G. Farooq ,  John A. Fitzsimmons ,  Lewis S. Goldmann ,  John U. Knickerbocker ,  Tasha E. Lopez ,  David J. Welsh

IPC分类号： H01L21/44 ,  H01L21/50 ,  H01L21/48 ,  H01L23/52 ,  H01L23/48 ,  H01L23/485 ,  H01L23/488

CPC分类号： H01L21/563 ,  H01L23/3171 ,  H01L24/12 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/10126 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13566 ,  H01L2224/16 ,  H01L2224/73203 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01R43/0256 ,  H05K3/284 ,  H05K3/3436 ,  H05K2201/0133 ,  H05K2201/10977 ,  Y02P70/613 ,  H01L2224/29099 ,  H01L2224/0401

摘要： Disclosed is a method of forming an integrated circuit structure that forms lead-free connectors on a device, surrounds the lead-free connectors with a compressible film, connects the device to a carrier (the lead-free connectors electrically connect the device to the carrier), and fills the gaps between the carrier and the device with an insulating underfill.

摘要翻译： 公开了一种形成集成电路结构的方法，其在器件上形成无铅连接器，用可压缩膜围绕无铅连接器，将器件连接到载体（无铅连接器将器件电连接到载体上 ），并用绝缘底部填充物填充载体和装置之间的间隙。

公开(公告)号：US07332821B2

公开(公告)日：2008-02-19

申请号：US10711076

申请日：2004-08-20

申请人： William E. Bernier ,  Tien-Jen Cheng ,  Marie S. Cole ,  David E. Eichstadt ,  Mukta G. Farooq ,  John A. Fitzsimmons ,  Lewis S. Goldmann ,  John U. Knickerbocker ,  Tasha E. Lopez ,  David J. Welsh

发明人： William E. Bernier ,  Tien-Jen Cheng ,  Marie S. Cole ,  David E. Eichstadt ,  Mukta G. Farooq ,  John A. Fitzsimmons ,  Lewis S. Goldmann ,  John U. Knickerbocker ,  Tasha E. Lopez ,  David J. Welsh

IPC分类号： H01L23/52 ,  H01L23/48 ,  H01L23/40 ,  H01L23/485 ,  H01L23/488 ,  H01L21/48 ,  H01L21/44

CPC分类号： H01L21/563 ,  H01L23/3171 ,  H01L24/12 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/10126 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13566 ,  H01L2224/16 ,  H01L2224/73203 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01R43/0256 ,  H05K3/284 ,  H05K3/3436 ,  H05K2201/0133 ,  H05K2201/10977 ,  Y02P70/613 ,  H01L2224/29099 ,  H01L2224/0401

摘要： Disclosed is a method of forming an integrated circuit structure that forms lead-free connectors on a device, surrounds the lead-free connectors with a compressible film, connects the device to a carrier (the lead-free connectors electrically connect the device to the carrier), and fills the gaps between the carrier and the device with an insulating underfill.

摘要翻译： 公开了一种形成集成电路结构的方法，其在器件上形成无铅连接器，用可压缩膜围绕无铅连接器，将器件连接到载体（无铅连接器将器件电连接到载体上 ），并用绝缘底部填充物填充载体和装置之间的间隙。

公开(公告)号：US07442878B2

公开(公告)日：2008-10-28

申请号：US11538823

申请日：2006-10-05

申请人： William E. Bernier ,  Marie S. Cole ,  Mukta G. Farooq ,  John U. Knickerbocker ,  Tasha E. Lopez ,  Roger A. Quon ,  David J. Welsh

发明人： William E. Bernier ,  Marie S. Cole ,  Mukta G. Farooq ,  John U. Knickerbocker ,  Tasha E. Lopez ,  Roger A. Quon ,  David J. Welsh

IPC分类号： H05K1/16

CPC分类号： H05K3/321 ,  H01L24/05 ,  H01L24/12 ,  H01L24/16 ,  H01L24/29 ,  H01L24/83 ,  H01L2224/0401 ,  H01L2224/05557 ,  H01L2224/13076 ,  H01L2224/13078 ,  H01L2224/1308 ,  H01L2224/131 ,  H01L2224/1319 ,  H01L2224/1329 ,  H01L2224/133 ,  H01L2224/13339 ,  H01L2224/13464 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/838 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/0781 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/1579 ,  H05K2201/0212 ,  H05K2201/0248 ,  H05K2201/0373 ,  H05K2201/1025 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/01026 ,  H01L2924/00015 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299

摘要： Disclosed is a laminated (or non-laminated) conductive interconnection for joining an integrated circuit device to a device carrier, where the conductive interconnection comprises alternating metal layers and polymer layers. In addition, the polymer can include dendrites, metal projections from the carrier or device, and/or micelle brushes on the outer portion of the polymer. The polymer layers include metal particles and the alternating metal layers and polymer layers form either a cube-shaped structure or a cylinder-shaped structure.

摘要翻译： 公开了用于将集成电路器件连接到器件载体的层压（或非层叠）导电互连，其中导电互连包括交替的金属层和聚合物层。 此外，聚合物可以包括枝晶，来自载体或器件的金属突起，和/或聚合物外部的胶束刷。 聚合物层包括金属颗粒，并且交替的金属层和聚合物层形成立方体结构或圆柱形结构。

公开(公告)号：US07170187B2

公开(公告)日：2007-01-30

申请号：US10711185

申请日：2004-08-31

申请人： William E. Bernier ,  Marie S. Cole ,  Mukta G. Farooq ,  John U. Knickerbocker ,  Tasha E. Lopez ,  Roger A. Quon ,  David J. Welsh

发明人： William E. Bernier ,  Marie S. Cole ,  Mukta G. Farooq ,  John U. Knickerbocker ,  Tasha E. Lopez ,  Roger A. Quon ,  David J. Welsh

IPC分类号： H01L23/48

CPC分类号： H05K3/321 ,  H01L24/05 ,  H01L24/12 ,  H01L24/16 ,  H01L24/29 ,  H01L24/83 ,  H01L2224/0401 ,  H01L2224/05557 ,  H01L2224/13076 ,  H01L2224/13078 ,  H01L2224/1308 ,  H01L2224/131 ,  H01L2224/1319 ,  H01L2224/1329 ,  H01L2224/133 ,  H01L2224/13339 ,  H01L2224/13464 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/838 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/0781 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/1579 ,  H05K2201/0212 ,  H05K2201/0248 ,  H05K2201/0373 ,  H05K2201/1025 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/01026 ,  H01L2924/00015 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299

摘要： Disclosed is a laminated (or non-laminated) conductive interconnection for joining an integrated circuit device to a device carrier, where the conductive interconnection comprises alternating metal layers and polymer layers. In addition, the polymer can include dendrites, metal projections from the carrier or device, and/or micelle brushes on the outer portion of the polymer. The polymer layers include metal particles and the alternating metal layers and polymer layers form either a cube-shaped structure or a cylinder-shaped structure.

摘要翻译： 公开了用于将集成电路器件连接到器件载体的层压（或非层叠）导电互连，其中导电互连包括交替的金属层和聚合物层。 此外，聚合物可以包括枝晶，来自载体或器件的金属突起，和/或聚合物外部的胶束刷。 聚合物层包括金属颗粒，并且交替的金属层和聚合物层形成立方体结构或圆柱形结构。

公开(公告)号：US07316572B2

公开(公告)日：2008-01-08

申请号：US10906111

申请日：2005-02-03

申请人： William E. Bernier ,  David E. Eichstadt ,  Mukta G. Farooq ,  John U. Knickerbocker

发明人： William E. Bernier ,  David E. Eichstadt ,  Mukta G. Farooq ,  John U. Knickerbocker

IPC分类号： H01R12/00

CPC分类号： H01L24/13 ,  G01R1/06716 ,  G01R1/07314 ,  G01R3/00 ,  H01L21/6835 ,  H01L24/11 ,  H01L24/81 ,  H01L2221/68377 ,  H01L2224/11003 ,  H01L2224/114 ,  H01L2224/11505 ,  H01L2224/116 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13169 ,  H01L2224/1318 ,  H01L2224/13184 ,  H01L2224/81205 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2224/8384 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/30105 ,  H01L2924/30107 ,  H05K3/06 ,  H05K3/3436 ,  H05K2201/10242 ,  Y02P70/613 ,  Y10T29/49124 ,  Y10T29/49204 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/0401

摘要： A method of forming compliant electrical contacts includes patterning a conductive layer into an array of compliant members. The array of compliant members is then positioned to be in contact with electrical connection pads on an integrated circuit wafer and the compliant members are joined to the pads. Then, the supporting layer that supported the compliant members is removed to leave the compliant members connected to the pads.

摘要翻译： 形成顺应性电触头的方法包括将导电层图案化为顺应构件阵列。 然后将顺应构件阵列定位成与集成电路晶片上的电连接焊盘接触，并且柔性构件连接到焊盘。 然后，移除支撑柔顺构件的支撑层，以使与柔性构件连接的衬垫离开。

公开(公告)号：US07819376B2

公开(公告)日：2010-10-26

申请号：US11930269

申请日：2007-10-31

申请人： David H. Danovitch ,  Mukta G. Farooq ,  Peter A. Gruber ,  John U. Knickerbocker ,  George R. Proto ,  Da-Yuan Shih

发明人： David H. Danovitch ,  Mukta G. Farooq ,  Peter A. Gruber ,  John U. Knickerbocker ,  George R. Proto ,  Da-Yuan Shih

IPC分类号： H01L21/44

CPC分类号： H01L24/11 ,  H01L21/6835 ,  H01L24/13 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/94 ,  H01L25/0657 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/11003 ,  H01L2224/111 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/27334 ,  H01L2224/73104 ,  H01L2224/83 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2224/27 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A method for forming interconnects onto attachment points of a wafer includes the steps of providing a mold with a plurality of cavities having a predetermined shape, depositing a release agent on surfaces of the cavities, filling the cavities with an interconnect material to form the interconnects, removing the release agent from the mold, and attaching the interconnects to the attachment points of the wafer. An adhesive layer can optionally be deposited in addition to the release layer. The adhesive layer can be used, for example, to bond the chip to a package.

摘要翻译： 用于在晶片的附接点上形成互连的方法包括以下步骤：提供具有预定形状的多个空腔的模具，在空腔的表面上沉积脱模剂，用互连材料填充空腔以形成互连， 从模具中除去脱模剂，以及将互连件附接到晶片的附接点。 除了剥离层之外，还可任选地沉积粘合剂层。 粘合剂层可以用于例如将芯片粘合到包装上。

公开(公告)号：US20080175939A1

公开(公告)日：2008-07-24

申请号：US11930269

申请日：2007-10-31

申请人： David H. Danovitch ,  Mukta G. Farooq ,  Peter A. Gruber ,  John U. Knickerbocker ,  George R. Proto ,  Da-Yuan Shih

发明人： David H. Danovitch ,  Mukta G. Farooq ,  Peter A. Gruber ,  John U. Knickerbocker ,  George R. Proto ,  Da-Yuan Shih

IPC分类号： B29C35/08

CPC分类号： H01L24/11 ,  H01L21/6835 ,  H01L24/13 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/94 ,  H01L25/0657 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/11003 ,  H01L2224/111 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/27334 ,  H01L2224/73104 ,  H01L2224/83 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2224/27 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A method for forming interconnects onto attachment points of a wafer includes the steps of providing a mold with a plurality of cavities having a predetermined shape, depositing a release agent on surfaces of the cavities, filling the cavities with an interconnect material to form the interconnects, removing the release agent from the mold, and attaching the interconnects to the attachment points of the wafer. An adhesive layer can optionally be deposited in addition to the release layer. The adhesive layer can be used, for example, to bond the chip to a package.

摘要翻译： 用于在晶片的附接点上形成互连的方法包括以下步骤：提供具有预定形状的多个空腔的模具，在空腔的表面上沉积脱模剂，用互连材料填充空腔以形成互连， 从模具中除去脱模剂，以及将互连件附接到晶片的附接点。 除了剥离层之外，还可任选地沉积粘合剂层。 粘合剂层可以用于例如将芯片粘合到包装上。

公开(公告)号：US07348270B1

公开(公告)日：2008-03-25

申请号：US11625449

申请日：2007-01-22

申请人： David H. Danovitch ,  Mukta G. Farooq ,  Peter A. Gruber ,  John U. Knickerbocker ,  George R. Proto ,  Da-Yuan Shih

发明人： David H. Danovitch ,  Mukta G. Farooq ,  Peter A. Gruber ,  John U. Knickerbocker ,  George R. Proto ,  Da-Yuan Shih

IPC分类号： H01L21/44

CPC分类号： H01L24/11 ,  H01L21/6835 ,  H01L24/13 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/94 ,  H01L25/0657 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/11003 ,  H01L2224/111 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/27334 ,  H01L2224/73104 ,  H01L2224/83 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2224/27 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A method for forming interconnects onto attachment points of a wafer includes the steps of providing a mold with a plurality of cavities having a predetermined shape, depositing a release agent on surfaces of the cavities, filling the cavities with an interconnect material to form the interconnects, removing the release agent from the mold, and attaching the interconnects to the attachment points of the wafer. An adhesive layer can optionally be deposited in addition to the release layer. The adhesive layer can be used, for example, to bond the chip to a package.

摘要翻译： 用于在晶片的附接点上形成互连的方法包括以下步骤：提供具有预定形状的多个空腔的模具，在空腔的表面上沉积脱模剂，用互连材料填充空腔以形成互连， 从模具中除去脱模剂，以及将互连件附接到晶片的附接点。 除了剥离层之外，还可任选地沉积粘合剂层。 粘合剂层可以用于例如将芯片粘合到包装上。

公开(公告)号：US07245022B2

公开(公告)日：2007-07-17

申请号：US10721984

申请日：2003-11-25

申请人： Mukta G. Farooq ,  John U. Knickerbocker ,  Frank L. Pompeo ,  Subhash L. Shinde

发明人： Mukta G. Farooq ,  John U. Knickerbocker ,  Frank L. Pompeo ,  Subhash L. Shinde

IPC分类号： H01L23/48

CPC分类号： H01L23/562 ,  H01L21/563 ,  H01L23/36 ,  H01L23/49827 ,  H01L24/75 ,  H01L2224/16 ,  H01L2224/73203 ,  H01L2224/73253 ,  H01L2924/01004 ,  H01L2924/01029 ,  H01L2924/01079 ,  H01L2924/16195

摘要： Under the present invention, a semiconductor chip is electrically connected to a substrate (e.g., organic, ceramic, etc.) by an interposer structure. The interposer structure comprises an elastomeric, compliant material that includes metallurgic through connections having a predetermined shape. In a typical embodiment, the metallurgical through connections electrically connect an under bump metallization of the semiconductor chip to a top surface metallization of the substrate. By utilizing the interposer structure in accordance with the present invention, the problems associated with previous semiconductor module designs are alleviated.

摘要翻译： 在本发明中，半导体芯片通过插入件结构与基板（例如有机，陶瓷等）电连接。 插入器结构包括弹性体柔性材料，其包括具有预定形状的通过连接的冶金。 在典型的实施例中，冶金通孔连接将半导体芯片的凸起下金属化电连接到衬底的顶表面金属化。 通过利用根据本发明的插入器结构，可以减轻与先前的半导体模块设计相关的问题。

公开(公告)号：US07923836B2

公开(公告)日：2011-04-12

申请号：US11459119

申请日：2006-07-21

申请人： Mukta G. Farooq ,  Tien-Jen Cheng ,  Roger A. Quon

发明人： Mukta G. Farooq ,  Tien-Jen Cheng ,  Roger A. Quon

IPC分类号： H01L23/48

CPC分类号： H01L24/05 ,  H01L23/3192 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05564 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13564 ,  H01L2224/1357 ,  H01L2224/13611 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/01028 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00 ,  H01L2224/05552

摘要： A microelectronic element and a related method for fabricating such is provided. The microelectronic element comprises a contact pad overlying a major surface of a substrate. The contact pad has a composition including copper at a contact surface. A passivation layer is also provided overlying the major surface of the substrate. The passivation layer overlies the contact pad such that it exposes at least a portion of the contact surface. A plurality of metal layers arranged in a stack overlie the contact surface and at least a portion of the passivation layer. The stack includes multiple layers, which can have different thicknesses and different metals, with the lowest layer including titanium (Ti) and nickel (Ni) in contact with the contact surface.

摘要翻译： 提供微电子元件及其制造方法。 微电子元件包括覆盖衬底的主表面的接触焊盘。 接触垫在接触表面具有包含铜的组成。 还提供覆盖在基底的主表面上的钝化层。 钝化层覆盖接触焊盘，使得其暴露接触表面的至少一部分。 布置在堆叠中的多个金属层覆盖在接触表面和钝化层的至少一部分上。 堆叠包括多层，其可以具有不同的厚度和不同的金属，其中最低层包括与接触表面接触的钛（Ti）和镍（Ni）。