Method and apparatus for processing a semiconductor wafer on a robotic
track having access to in situ wafer backside particle detection
    1.
    发明授权
    Method and apparatus for processing a semiconductor wafer on a robotic track having access to in situ wafer backside particle detection 失效
    用于处理具有进入原位晶片背面颗粒检测的机器人轨迹上的半导体晶片的方法和装置

    公开(公告)号:US5963315A

    公开(公告)日:1999-10-05

    申请号:US912726

    申请日:1997-08-18

    CPC分类号: H01L21/67745 H01L21/67253

    摘要: The present disclosure is a method for in situ monitoring of backside contamination on a semiconductor wafer (120) between processing steps which are performed in a multi-chamber tool (500). In a first form, a laser source (220) and a detector (210) are mounted on a robotic arm (110, 111), or within a semiconductor processing tool (500). The laser (220) and detector (210) move along with the robotic arm (110) as the robotic arm (110) shuffles the wafer (120) between processing carriers (610-650) and chambers (510-540). While in transit the backside of the semiconductor wafer (120) is scanned by a laser beam (221), whereby contamination is detected by a detector (210). The laser (220) and detector (210) then scan the backside of the wafer (120) while the robotic arm (110) is in transit and/or while the robotic arm (110) is stationary in the processing sequence. The absolute particle count and differential/incremental particulate counts are calculated on a chamber-by-chamber, and wafer-by-wafer basis, using a data processor (230).

    摘要翻译: 本公开是一种用于在多腔室工具(500)中执行的处理步骤之间的半导体晶片(120)上的背面污染的原位监测的方法。 在第一形式中,激光源(220)和检测器(210)安装在机器人手臂(110,111)上或半导体处理工具(500)内。 随着机器人手臂(110)将处理载体(610-650)和腔室(510-540)之间的晶片(120)洗牌,激光器(220)和检测器(210)随机器人手臂(110)一起移动。 在运输过程中,通过激光束(221)扫描半导体晶片(120)的背面,由此由检测器(210)检测污染物。 当机器人手臂(110)处于运输过程中时,和/或当机器人手臂(110)在处理顺序中静止时,激光器(220)和检测器(210)扫描晶片(120)的背面。 使用数据处理器(230),在逐个室和逐个晶片的基础上计算绝对颗粒数和微分/增量颗粒计数。

    MECHANICALLY RECONFIGURABLE VERTICAL TESTER INTERFACE FOR IC PROBING
    2.
    发明申请
    MECHANICALLY RECONFIGURABLE VERTICAL TESTER INTERFACE FOR IC PROBING 有权
    用于IC探测的机械可重构的垂直测试仪接口

    公开(公告)号:US20070229102A1

    公开(公告)日:2007-10-04

    申请号:US11761912

    申请日:2007-06-12

    IPC分类号: G01R31/02

    摘要: A wafer test assembly includes multiple probe head substrates arranged like tiles with connectors attached to one side and probes supported on the opposing side. In one embodiment, flexible cable connectors directly connect the connectors on the probe head tile to a test head, while in another embodiment the flexible cables connect the probe head tile to a PCB providing horizontal routing to test head connectors. In one embodiment, leveling pins provide a simplified support structure connecting to a retaining element attached to the tiles to provide for applying a push-pull leveling force. A test head connector interface frame enables rearrangement of connectors between the test head and the probe card to provide for both full wafer contact or partial wafer contact. The test head connectors are rearranged by being slidable on rails, or pluggable and unpluggable enabling movement over a range of positions.

    摘要翻译: 晶片测试组件包括多个探针头基底,其布置成瓦片,其中连接器连接到一侧,探针支撑在相对侧上。 在一个实施例中,柔性电缆连接器将探头头瓦片上的连接器直接连接到测试头,而在另一个实施例中,柔性电缆将探头头瓦片连接到PCB,从而向测试头连接器提供水平布线。 在一个实施例中,调平销提供连接到附接到瓦片的保持元件以提供施加推挽平整力的简化支撑结构。 测试头连接器接口框架能够重新布置测试头和探针卡之间的连接器,以提供完整的晶片接触或部分晶片接触。 测试头连接器通过在轨道上滑动来重新布置,或者可插拔和可拔出,使得能够在一定范围的位置上移动。

    Mechanically reconfigurable vertical tester interface for IC probing
    3.
    发明申请
    Mechanically reconfigurable vertical tester interface for IC probing 失效
    用于IC探测的机械可重构垂直测试仪接口

    公开(公告)号:US20050277323A1

    公开(公告)日:2005-12-15

    申请号:US10868425

    申请日:2004-06-15

    摘要: A wafer test assembly includes multiple probe head substrates arranged like tiles with connectors attached to one side and probes supported on the opposing side. In one embodiment, flexible cable connectors directly connect the connectors on the probe head tile to a test head, while in another embodiment the flexible cables connect the probe head tile to a PCB providing horizontal routing to test head connectors. In one embodiment, leveling pins provide a simplified support structure connecting to a retaining element attached to the tiles to provide for applying a push-pull leveling force. A test head connector interface frame enables rearrangement of connectors between the test head and the probe card to provide for both full wafer contact or partial wafer contact. The test head connectors are rearranged by being slidable on rails, or pluggable and unpluggable enabling movement over a range of positions.

    摘要翻译: 晶片测试组件包括多个探针头基底,其布置成瓦片,其中连接器连接到一侧,探针支撑在相对侧上。 在一个实施例中,柔性电缆连接器将探头头瓦片上的连接器直接连接到测试头,而在另一个实施例中,柔性电缆将探头头瓦片连接到PCB,从而向测试头连接器提供水平布线。 在一个实施例中,调平销提供连接到附接到瓦片的保持元件以提供施加推挽平整力的简化支撑结构。 测试头连接器接口框架能够重新布置测试头和探针卡之间的连接器,以提供完整的晶片接触或部分晶片接触。 测试头连接器通过在轨道上滑动来重新布置,或者可插拔和可拔出,使得能够在一定范围的位置上移动。

    Connection of integrated circuit to a substrate
    4.
    发明授权
    Connection of integrated circuit to a substrate 失效
    将集成电路连接到基板

    公开(公告)号:US06916185B2

    公开(公告)日:2005-07-12

    申请号:US10464429

    申请日:2003-06-18

    摘要: The present invention provides a method of connecting an integrated circuit to a substrate and a corresponding circuit arrangement. Connecting occurs by performing the steps of: providing a main area (HF1) of the integrated circuit (1), which has an electrical contacting region (2), with a mechanical supporting structure (3a, 3b; 33a, 33b, 33c; 43a, 43b, 43c); providing a solderable surface region (5a, 5b; 35a, 35b, 35c; 60a, 60b, 60c) of the mechanical supporting structure (3a, 3b; 33a, 33b, 33c; 43a, 43b, 43c); providing a solderable terminal region (10; 5, 30; 40, 50), which is electrically connected to the electrical contacting region (2), on the main area (HF1) of the integrated circuit (1); providing a main area (HF2) of the substrate (20) with a first soldering region (22′, 23′; 22′, 23′, 22″, 23″), which can be aligned with the solderable surface regions (5a, 5b; 35a, 35b, 35c; 60a, 60b, 60c), and with a second soldering region (22, 23), which can be aligned with the solderable terminal region (10; 5, 30; 40, 50); and simultaneous soldering of the surface regions (5a, 5b; 35a, 35b, 35c; 60a, 60b, 60c) to the first soldering region (22′, 23′; 22′, 23′, 22″, 23″) and of the terminal region (10; 5, 30; 40, 50) to the second soldering region (22, 23).

    摘要翻译: 本发明提供了一种将集成电路连接到基板和相应的电路装置的方法。 通过执行以下步骤进行连接:提供具有电接触区域(2)的集成电路(1)的主区域(HF 1),其具有机械支撑结构(3a,3b; 33a,33b b,33c; 43a,43b,43c); 提供机械支撑结构(3a,3b; 33a,33b,33c)的可焊接表面区域(5a,5b; 35a,35b,35c; 60a,60b,60c) ; 43 a,43 b,43 c); 在所述集成电路(1)的主区域(HF 1)上提供与所述电接触区域(2)电连接的可焊接终端区域(10; 5,30; 40,50) 通过第一焊接区域(22',23'; 22',23',22“,23”)提供基板(20)的主区域(HF 2),其可与可焊接表面区域 (5a,5b; 35a,35b,35c; 60a,60b,60c)以及可与可焊接终端区域(10; ...)对齐的第二焊接区域(22,23) 5,30; 40,50); 以及将所述表面区域(5a,5b; 35a,35b,35c; 60a,60b,60c)同时焊接到所述第一焊接区域(22',23'; 22',23' 22“,23”)和端子区域(10; 5,30; 40,50)连接到第二焊接区域(22,23)。

    Semiconductor wafer contact system and method for contacting a
semiconductor wafer
    6.
    发明授权
    Semiconductor wafer contact system and method for contacting a semiconductor wafer 失效
    用于接触半导体晶片的半导体晶片接触系统和方法

    公开(公告)号:US5773986A

    公开(公告)日:1998-06-30

    申请号:US416121

    申请日:1995-04-03

    IPC分类号: G01R31/28 G01R1/073

    摘要: A semiconductor wafer contact system includes a sealed bladder (32) containing incompressible material. The sealed bladder (32) presses against a flexible circuit layer (28) including an array of electrical contacts (30). The bladder (32) forces the array of electrical contacts (30) against a corresponding array of device electrical contacts (12) on die (11) of a semiconductor wafer (10). The bladder (32) adapts in shape to compensate for die level and wafer level irregularities in contact height and non-parallelism. Additionally, bladder (32) ensures a constant force between membrane contacts (30) and die contacts (12), across the entire wafer (10).

    摘要翻译: 半导体晶片接触系统包括含有不可压缩材料的密封囊(32)。 密封的囊(32)压靠包括电触头阵列(30)的柔性电路层(28)。 气囊(32)迫使电触点阵列抵靠在半导体晶片(10)的芯片(11)上的相应阵列的器件电触点(12)。 囊(32)的形状适应于补偿接触高度和非平行度下的晶片级和晶片级不规则性。 另外,囊(32)确保膜接触件(30)和管芯接触件(12)之间跨越整个晶片(10)的恒定的力。

    Encapsulation method for localized oxidation of silicon with trench
isolation
    7.
    发明授权
    Encapsulation method for localized oxidation of silicon with trench isolation 失效
    具有沟槽隔离的硅的局部氧化的封装方法

    公开(公告)号:US5455194A

    公开(公告)日:1995-10-03

    申请号:US398844

    申请日:1995-03-06

    摘要: A method for the fabrication of a trench isolation region (44) includes the deposition of first, second, and third oxidizable layers (28, 34, 42). The first oxidizable layer (28) is deposited to overlie the surface of a trench (12) formed in a semiconductor substrate (10). The first oxidizable layer (28) also fills a recess (26) formed in a masking layer (14), and resides adjacent to the upper surface of the trench (12). After oxidizing the first oxidizable layer (28), a second oxidizable layer (34) is deposited to fill the trench (12). A third oxidizable layer (42) is deposited to overlie the second oxidizable layer (34) and fills a remaining portion of the recess (26). An oxidation process is performed to oxidize oxidizable layer (42) and a portion of second oxidizable layer (34) to form a trench isolation region (44). In an alternative embodiment of the invention, a shallow isolation region (46) is formed in proximity to the trench isolation region ( 44).

    摘要翻译: 用于制造沟槽隔离区(44)的方法包括沉积第一,第二和第三可氧化层(28,34,42)。 沉积第一可氧化层(28)以覆盖形成在半导体衬底(10)中的沟槽(12)的表面。 第一可氧化层(28)还填充形成在掩模层(14)中的凹部(26),并且邻近沟槽(12)的上表面驻留。 在氧化第一可氧化层(28)之后,沉积第二可氧化层(34)以填充沟槽(12)。 沉积第三可氧化层(42)以覆盖第二可氧化层(34)并填充凹部(26)的剩余部分。 进行氧化处理以氧化可氧化层(42)和一部分第二可氧化层(34)以形成沟槽隔离区(44)。 在本发明的替代实施例中,在隔离区(44)附近形成浅隔离区(46)。

    Multiple trench semiconductor structure method
    8.
    发明授权
    Multiple trench semiconductor structure method 失效
    多沟槽半导体结构方法

    公开(公告)号:US5004703A

    公开(公告)日:1991-04-02

    申请号:US382947

    申请日:1989-07-21

    IPC分类号: H01L21/308

    CPC分类号: H01L21/3085 H01L21/3081

    摘要: A method of fabricating multiple trench semiconductor structures wherein a preferred embodiment includes forming an epitaxial silicon layer on a silicon substrate and a dielectric layer on the epitaxial silicon layer. An opening is then formed which extends through the dielectric layer and into the epitaxial silicon layer. Sidewall spacers are formed in the opening and an oxide lens is formed in the opening between the sidewall spacers. The sidewall spacers are then removed and trenches are formed in the opening where the sidewall spacers were formerly disposed.

    摘要翻译: 一种制造多个沟槽半导体结构的方法,其中优选实施例包括在硅衬底上形成外延硅层和外延硅层上的电介质层。 然后形成延伸穿过介电层并进入外延硅层的开口。 侧壁间隔件形成在开口中,并且氧化物透镜形成在侧壁间隔件之间的开口中。 然后去除侧壁间隔物,并且在先前设置侧壁间隔物的开口中形成沟槽。

    Mechanically reconfigurable vertical tester interface for IC probing
    9.
    发明授权
    Mechanically reconfigurable vertical tester interface for IC probing 有权
    用于IC探测的机械可重构垂直测试仪接口

    公开(公告)号:US07659736B2

    公开(公告)日:2010-02-09

    申请号:US11761912

    申请日:2007-06-12

    IPC分类号: G01R31/02

    摘要: A wafer test assembly includes multiple probe head substrates arranged like tiles with connectors attached to one side and probes supported on the opposing side. In one embodiment, flexible cable connectors directly connect the connectors on the probe head tile to a test head, while in another embodiment the flexible cables connect the probe head tile to a PCB providing horizontal routing to test head connectors. In one embodiment, leveling pins provide a simplified support structure connecting to a retaining element attached to the tiles to provide for applying a push-pull leveling force. A test head connector interface frame enables rearrangement of connectors between the test head and the probe card to provide for both full wafer contact or partial wafer contact. The test head connectors are rearranged by being slidable on rails, or pluggable and unpluggable enabling movement over a range of positions.

    摘要翻译: 晶片测试组件包括多个探针头基底,其布置成瓦片,其中连接器连接到一侧,探针支撑在相对侧上。 在一个实施例中,柔性电缆连接器将探头头瓦片上的连接器直接连接到测试头,而在另一个实施例中,柔性电缆将探头头瓦片连接到PCB,从而向测试头连接器提供水平布线。 在一个实施例中,调平销提供连接到附接到瓦片的保持元件以提供施加推挽平整力的简化支撑结构。 测试头连接器接口框架能够重新布置测试头和探针卡之间的连接器,以提供完整的晶片接触或部分晶片接触。 测试头连接器通过在轨道上滑动来重新布置,或者可插拔和可拔出,使得能够在一定范围的位置上移动。