摘要:
A method for flip chip stacking includes forming a cavity wafer comprising a plurality of cavities and a pair of corner guides, placing a through-silicon-via (TSV) interposer with solder bumps coupled to a surface of the TSV interposer on the cavity wafer, such that the solder bumps are situated in the plurality of cavities and the TSV interposer is situated between the pair of corner guides, placing an integrated circuit (IC) die on another surface of the TSV interposer, such that the IC die, the TSV interposer, and the solder bumps form a stacked interposer unit, removing the stacked interposer unit from the cavity wafer, and bonding the solder bumps of the stacked interposer unit to an organic substrate such that the stacked interposer unit and the organic substrate form a flip chip.
摘要:
A cavity wafer for flip chip stacking includes an electrostatic (ESC) chuck wafer with a plurality of cavities, and a bonding layer on a surface of the ESC chuck wafer. The bonding layer is configured to receive a through-silicon-via (TSV) interposer with solder bumps. The plurality of cavities are configured to receive the solder bumps at the TSV interposer. The bonding layer is configured to receive an electrostatic bias for bonding the ESC chuck wafer to the TSV interposer with the solder bumps.
摘要:
A method for flip chip stacking includes forming a cavity wafer comprising a plurality of cavities and a pair of corner guides, placing a through-silicon-via (TSV) interposer with solder bumps coupled to a surface of the TSV interposer on the cavity wafer, such that the solder bumps are situated in the plurality of cavities and the TSV interposer is situated between the pair of corner guides, placing an integrated circuit (IC) die on another surface of the TSV interposer, such that the IC die, the TSV interposer, and the solder bumps form a stacked interposer unit, removing the stacked interposer unit from the cavity wafer, and bonding the solder bumps of the stacked interposer unit to an organic substrate such that the stacked interposer unit and the organic substrate form a flip chip.
摘要:
A silicon interposer includes a plurality of patterned metal layers formed on a silicon wafer portion and a plurality of through-silicon vias extending through the silicon wafer portion. The through-silicon vias have an interdiffusion conductive element.
摘要:
The present invention involves a method of providing an integrated circuit package having a substrate with a vent opening. The integrated circuit package includes a substrate having an opening and an integrated circuit mounted to the substrate. An underfill material is dispensed between the substrate and the integrated circuit.
摘要:
The present invention involves a method of providing an integrated circuit package having a substrate with a vent opening. The integrated circuit package includes a substrate having an opening and an integrated circuit mounted to the substrate. An underfill material is dispensed between the substrate and the integrated circuit.
摘要:
A redundant package for optical components includes an inner package enclosing the optical component, and an outer package enclosing the inner package. A heater may be disposed in the inner package proximate the optical component to control its temperature, and to maintain this temperature control, the outer package creates an isolated air pocket around the inner package which thermally insulates the inner package from the outside environment. The outer package is formed of a material having low thermal conductivity, to promote this insulating function. This package is especially useful if the optical component comprises a planar lightwave circuit (PLC), e.g., an arrayed waveguide grating (AWG), which requires tight temperature control and structural integrity to maintain the integrity of the optical paths.
摘要:
An integrated circuit (IC) structure can include an internal element and a flexible circuitry directly coupled to the internal element. The flexible circuitry can be configured to exchange signals between the internal element and a node external to the IC structure.
摘要:
A planar lightwave circuit includes an arrayed waveguide grating (AWG), with input and output waveguides, partially curved array waveguides with respective length differences, and planar waveguide regions for focusing optical energy between the input/output and array waveguides. Optimal waveguide widths and spacing along the planar waveguide region facets are disclosed, which are largely determinative of AWG size and optical performance. Also disclosed are optimal cross-sectional waveguide dimensions (e.g., width and height); modified index of refraction difference between the waveguide core and cladding regions; and optimal array waveguide lengths, path length differences, and free spectral range. These features, especially when combined with advanced fiber attachment, passivation and packaging techniques, result in high-yield, high-performance AWGs (both gaussian and flattop versions).
摘要:
A partial gel step in the underfilling of an integrated circuit that is mounted to a substrate. The process involves dispensing a first underfill material and then heating the underfill material to a partial gel state. The partial gel step may reduce void formation and improve adhesion performance during moisture loading.