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73 条记录 (耗时 0.027 秒)

    Article for connecting optical fibers
    3.
    发明授权
    Article for connecting optical fibers 失效
    光纤连接条

    公开(公告)号：US5091988A

    公开(公告)日：1992-02-25

    申请号：US684129

    申请日：1991-04-12

    申请人： Yinon Degani ,  Robert M. Kimball ,  George J. Shevchuk

    发明人： Yinon Degani ,  Robert M. Kimball ,  George J. Shevchuk

    IPC分类号： G02B6/36 ,  G02B6/38 ,  G02B6/42

    CPC分类号： G02B6/3838 ,  G02B6/3869 ,  G02B6/3873 ,  G02B6/389

    摘要： An optical fiber connector pair is provided, which includes a plug assembly and a receptacle. An optical connection can be repeatedly made and broken by insertion and withdrawal, repectively, of the plug assembly relative to the receptacle. The final alignment of the mating fiber ends is provided by a pair of silicon blocks, each having a guiding groove formed in one surface. One block is included in the receptacle, and the other block is included in the plug assembly. One fiber end is affixed in each groove. The act of inserting the plug assembly in the receptacle brings the grooved surfaces together such that each fiber is captured by the opposing groove.

    Integrated passive devices
    4.
    发明申请
    Integrated passive devices 审中-公开
    集成无源器件

    公开(公告)号：US20090218655A1

    公开(公告)日：2009-09-03

    申请号：US12387706

    申请日：2009-05-06

    申请人： Yinon Degani ,  Maureen Y. Lau ,  King Lien Tai

    发明人： Yinon Degani ,  Maureen Y. Lau ,  King Lien Tai

    IPC分类号： H01L27/06 ,  B32B9/04

    CPC分类号： H01L28/40 ,  H01L27/016 ,  H01L27/101 ,  H01L28/10 ,  H01L28/20 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The specification describes an integrated passive device (IPD) that is formed on a polysilicon substrate. A method for making the IPD is disclosed wherein the polysilicon substrate is produced starting with a single crystal handle wafer, depositing a thick substrate layer of polysilicon on one or both sides of the starting wafer, forming the IPD on one of the polysilicon substrate layers, and removing the handle wafer. In a preferred embodiment the single crystal silicon handle wafer is a silicon wafer rejected from a single crystal silicon wafer production line.

    摘要翻译： 本说明书描述了形成在多晶硅衬底上的集成无源器件（IPD）。 公开了一种用于制造IPD的方法，其中从单晶晶片处开始制造多晶硅衬底，在起始晶片的一侧或两侧沉积厚的多晶硅衬底层，在多晶硅衬底层之一上形成IPD， 并移除手柄晶片。 在优选实施例中，单晶硅处理晶片是从单晶硅晶片生产线排除的硅晶片。

    Testing integrated circuits
    5.
    发明授权
    Testing integrated circuits 失效
    测试集成电路

    公开(公告)号：US07061258B2

    公开(公告)日：2006-06-13

    申请号：US10997629

    申请日：2004-11-24

    申请人： Yinon Degani ,  Charley Chunlei Gao ,  King Lien Tai

    发明人： Yinon Degani ,  Charley Chunlei Gao ,  King Lien Tai

    IPC分类号： G01R31/02

    CPC分类号： G01R1/0735

    摘要： A flexible membrane test apparatus and test method for high-speed IC chips. The method and apparatus rely on locating the reference components of the test circuit very close to the contact pads of the IC chip under test. This is achieved in one embodiment by locating those components adjacent to the flexible membrane. In another embodiment, the reference components may be attached to the membrane itself, so the length of the runners connecting the contact points of the tester and the critical reference components is optimally reduced. In yet a further embodiment, the entire test circuit, in the form of an IC test chip, is located on the membrane.

    摘要翻译： 一种用于高速IC芯片的柔性膜测试装置和测试方法。 该方法和装置依赖于将测试电路的参考部件定位得非常靠近被测IC芯片的接触焊盘。 这在一个实施例中通过将这些部件定位在与柔性膜相邻的位置来实现。 在另一个实施例中，参考部件可以附接到膜本身，因此连接测试器的接触点和关键参考部件的流道的长度被最佳地减小。 在又一个实施例中，以IC测试芯片的形式的整个测试电路位于膜上。

    Integrated passive devices
    6.
    发明申请
    Integrated passive devices 失效
    集成无源器件

    公开(公告)号：US20050253255A1

    公开(公告)日：2005-11-17

    申请号：US10835338

    申请日：2004-04-29

    申请人： Yinon Degani ,  Maureen Lau ,  King Tai

    发明人： Yinon Degani ,  Maureen Lau ,  King Tai

    IPC分类号： H01L27/04 ,  H01L21/00 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L23/34 ,  H01L27/01

    CPC分类号： H01L28/40 ,  H01L27/016 ,  H01L27/101 ,  H01L28/10 ,  H01L28/20 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The specification describes an integrated passive device (IPD) that is formed on a polysilicon substrate. A method for making the IPD is disclosed wherein the polysilicon substrate is produced starting with a single crystal handle wafer, depositing a thick substrate layer of polysilicon on one or both sides of the starting wafer, forming the IPD on one of the polysilicon substrate layers, and removing the handle wafer. In a preferred embodiment the single crystal silicon handle wafer is a silicon wafer rejected from a single crystal silicon wafer production line.

    摘要翻译： 本说明书描述了形成在多晶硅衬底上的集成无源器件（IPD）。 公开了一种用于制造IPD的方法，其中从单晶晶片处开始制造多晶硅衬底，在起始晶片的一侧或两侧沉积厚的多晶硅衬底层，在多晶硅衬底层之一上形成IPD， 并移除手柄晶片。 在优选实施例中，单晶硅处理晶片是从单晶硅晶片生产线排除的硅晶片。

    Integrated circuit bonding method and apparatus
    8.
    发明授权
    Integrated circuit bonding method and apparatus 有权
    集成电路接合方法及装置

    公开(公告)号：US6074897A

    公开(公告)日：2000-06-13

    申请号：US238706

    申请日：1999-01-28

    申请人： Yinon Degani ,  Lawrence Arnold Greenberg

    发明人： Yinon Degani ,  Lawrence Arnold Greenberg

    IPC分类号： H01L21/56 ,  H01L21/60 ,  H01L21/44 ,  H01L21/48 ,  H01L21/50 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

    CPC分类号： H01L24/81 ,  H01L21/563 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/81801 ,  H01L2224/83856 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01051 ,  H01L2924/01061 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/15151 ,  H01L2924/18161 ,  Y10S438/906

    摘要： A technique for enabling sufficient flow of flux cleaning fluids and an underfill material in the relatively low-profile gap between a flip-chip bonded IC chip and a substrate, such as a printed circuit board, is to provide at least one aperture in the substrate under the IC chip. The use of such an aperture enables, for example, flux cleaning fluid to flow through the aperture into the low-profile gap between the IC chip and the substrate surface, such as by the application of pressure or by gravity, which then exits through openings between formed interconnect bonds at a sufficient flow rate to adequately remove flux residues. An epoxy underfill to the IC chip can be formed in a similar manner. For example, a relatively thick bead of epoxy, such as on the order of the thickness of the IC chip, is deposited or stencil printed on the substrate surface around the edges of the IC chip and capillary action is then relied upon to draw the epoxy into the low-profile gap. Undesirable air pockets which otherwise would develop form the displaced air as the epoxy flows into the low-profile gap can advantageously escape through the aperture of the invention.

    摘要翻译： 在倒装芯片接合IC芯片和诸如印刷电路板的基板之间的相对较小的间隙中使助焊剂清洁流体和底部填充材料足够流动的技术是在基板中提供至少一个孔 在IC芯片下。 使用这种孔可以使例如助焊剂清洁流体通过孔径流入IC芯片和衬底表面之间的薄型间隙，例如通过施加压力或重力，然后压力或重力通过开口 在形成的互连键之间以足够的流速充分去除焊剂残余物。 可以以类似的方式形成到IC芯片的环氧树脂底部填充。 例如，相对较厚的环氧树脂珠，例如IC芯片厚度的顺序，沉积或模板印刷在IC芯片边缘周围的基板表面上，然后依靠毛细作用来绘制环氧树脂 进入低调的差距。 当环氧树脂流入低轮廓间隙时，否则会发展形成排出空气的不良气囊可以有利地通过本发明的孔逃逸。