公开(公告)号：US20050239293A1

公开(公告)日：2005-10-27

申请号：US10830203

申请日：2004-04-21

申请人： Zhenjiang Cui ,  Josephine Chang ,  Alexandros Demos ,  Reza Arghavani ,  Derek Witty ,  Helen Armer ,  Girish Dixit ,  Hichem M'Saad

发明人： Zhenjiang Cui ,  Josephine Chang ,  Alexandros Demos ,  Reza Arghavani ,  Derek Witty ,  Helen Armer ,  Girish Dixit ,  Hichem M'Saad

IPC分类号： H01L21/314 ,  H01L21/316 ,  H01L21/4763 ,  H01L21/26 ,  H01L21/31 ,  H01L21/324 ,  H01L21/42 ,  H01L21/469 ,  H01L21/477

CPC分类号： H01L21/31633 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/02351

摘要： A method of depositing a low dielectric constant film on a substrate and post-treating the low dielectric constant film is provided. The post-treatment includes rapidly heating the low dielectric constant film to a desired high temperature and then rapidly cooling the low dielectric constant film such that the low dielectric constant film is exposed to the desired high temperature for about five seconds or less. In one aspect, the post-treatment also includes exposing the low dielectric constant film to an electron beam treatment and/or UV radiation.

摘要翻译： 提供了一种在衬底上沉积低介电常数膜并对低介电常数膜进行后处理的方法。 后处理包括将低介电常数膜快速加热到期望的高温，然后快速冷却低介电常数膜，使得低介电常数膜暴露于所需的高温约5秒或更短。 一方面，后处理还包括将低介电常数膜暴露于电子束处理和/或UV辐射。

公开(公告)号：US20060192150A1

公开(公告)日：2006-08-31

申请号：US11414649

申请日：2006-04-27

申请人： Alexandros Demos ,  Khaled Elsheref ,  Yuri Trachuk ,  Tom Cho ,  Girish Dixit ,  Hichem M'Saad ,  Derek Witty

发明人： Alexandros Demos ,  Khaled Elsheref ,  Yuri Trachuk ,  Tom Cho ,  Girish Dixit ,  Hichem M'Saad ,  Derek Witty

IPC分类号： G21K5/10 ,  H01J37/08

CPC分类号： H01J37/317 ,  H01J2237/0041

摘要： Embodiments in accordance with the present invention relate to a number of techniques, which may be applied alone or in combination, to reduce charge damage of substrates exposed to electron beam radiation. In one embodiment, charge damage is reduced by establishing a robust electrical connection between the exposed substrate and ground. In another embodiment, charge damage is reduced by modifying the sequence of steps for activating and deactivating the electron beam source to reduce the accumulation of charge on the substrate. In still another embodiment, a plasma is struck in the chamber containing the e-beam treated substrate, thereby removing accumulated charge from the substrate. In a further embodiment of the present invention, the voltage of the anode of the e-beam source is reduced in magnitude to account for differences in electron conversion efficiency exhibited by different cathode materials.

摘要翻译： 根据本发明的实施例涉及可以单独或组合应用的多种技术，以减少暴露于电子束辐射的衬底的电荷损伤。 在一个实施例中，通过在暴露的基板和地之间建立牢固的电连接来减小电荷损伤。 在另一个实施例中，通过修改用于激活和去激活电子束源的步骤顺序来减少电荷损伤，以减少电荷在衬底上的累积。 在另一个实施例中，在包含电子束处理的衬底的室中撞击等离子体，从而从衬底去除积聚的电荷。 在本发明的另一个实施例中，电子束源的阳极的电压的大小被减小以考虑到由不同的阴极材料表现的电子转换效率的差异。

公开(公告)号：US20050224722A1

公开(公告)日：2005-10-13

申请号：US11002600

申请日：2004-12-01

申请人： Alexandros Demos ,  Khaled Elsheref ,  Yuri Trachuk ,  Tom Cho ,  Girish Dixit ,  Hichem M'Saad ,  Derek Witty

发明人： Alexandros Demos ,  Khaled Elsheref ,  Yuri Trachuk ,  Tom Cho ,  Girish Dixit ,  Hichem M'Saad ,  Derek Witty

IPC分类号： H01J37/317

CPC分类号： H01J37/317 ,  H01J2237/0041

摘要： Embodiments in accordance with the present invention relate to a number of techniques, which may be applied alone or in combination, to reduce charge damage of substrates exposed to electron beam radiation. In one embodiment, charge damage is reduced by establishing a robust electrical connection between the exposed substrate and ground. In another embodiment, charge damage is reduced by modifying the sequence of steps for activating and deactivating the electron beam source to reduce the accumulation of charge on the substrate. In still another embodiment, a plasma is struck in the chamber containing the e-beam treated substrate, thereby removing accumulated charge from the substrate. In a further embodiment of the present invention, the voltage of the anode of the e-beam source is reduced in magnitude to account for differences in electron conversion efficiency exhibited by different cathode materials.

摘要翻译： 根据本发明的实施例涉及可以单独或组合应用的多种技术，以减少暴露于电子束辐射的衬底的电荷损伤。 在一个实施例中，通过在暴露的基板和地之间建立牢固的电连接来减小电荷损伤。 在另一个实施例中，通过修改用于激活和去激活电子束源的步骤顺序来减少电荷损伤，以减少电荷在衬底上的累积。 在另一个实施例中，在包含电子束处理的衬底的室中撞击等离子体，从而从衬底去除积聚的电荷。 在本发明的另一个实施例中，电子束源的阳极的电压的大小被减小以考虑到由不同的阴极材料表现的电子转换效率的差异。

公开(公告)号：US07018941B2

公开(公告)日：2006-03-28

申请号：US10830203

申请日：2004-04-21

申请人： Zhenjiang Cui ,  Josephine J. Chang ,  Alexandros T. Demos ,  Reza Arghavani ,  Derek R. Witty ,  Helen R. Armer ,  Girish A. Dixit ,  Hichem M'Saad

发明人： Zhenjiang Cui ,  Josephine J. Chang ,  Alexandros T. Demos ,  Reza Arghavani ,  Derek R. Witty ,  Helen R. Armer ,  Girish A. Dixit ,  Hichem M'Saad

IPC分类号： H01L21/31 ,  H01L21/461

CPC分类号： H01L21/31633 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/02351

摘要： A method of depositing a low dielectric constant film on a substrate and post-treating the low dielectric constant film is provided. The post-treatment includes rapidly heating the low dielectric constant film to a desired high temperature and then rapidly cooling the low dielectric constant film such that the low dielectric constant film is exposed to the desired high temperature for about five seconds or less. In one aspect, the post-treatment also includes exposing the low dielectric constant film to an electron beam treatment and/or UV radiation.

摘要翻译： 提供了一种在衬底上沉积低介电常数膜并对低介电常数膜进行后处理的方法。 后处理包括将低介电常数膜快速加热到期望的高温，然后快速冷却低介电常数膜，使得低介电常数膜暴露于所需的高温约5秒或更短。 一方面，后处理还包括将低介电常数膜暴露于电子束处理和/或UV辐射。

公开(公告)号：US20050186339A1

公开(公告)日：2005-08-25

申请号：US10783316

申请日：2004-02-20

申请人： Nagarajan Rajagopalan ,  Bok Kim ,  Lester D'Cruz ,  Zhenjiang Cui ,  Girish Dixit ,  Visweswaren Sivaramakrishnan ,  Hichem M'Saad ,  Meiyee Shek ,  Li-Qun Xia

发明人： Nagarajan Rajagopalan ,  Bok Kim ,  Lester D'Cruz ,  Zhenjiang Cui ,  Girish Dixit ,  Visweswaren Sivaramakrishnan ,  Hichem M'Saad ,  Meiyee Shek ,  Li-Qun Xia

IPC分类号： C23C16/02 ,  C23C16/42 ,  C23C16/52 ,  H01L21/768 ,  C23C16/00 ,  H05H1/24

CPC分类号： H01L21/76838 ,  C23C16/0272 ,  C23C16/42

摘要： Adhesion between a copper metallization layer and a dielectric barrier film may be promoted by stabilizing a flow of a silicon-containing precursor in a divert line leading to the chamber exhaust. The stabilized gas flow is then introduced to the processing chamber to precisely form a silicide layer over the copper. This silicidation step creates a network of strong Cu—Si bonds that prevent delamination of the barrier layer, while not substantially altering the sheet resistance and other electrical properties of the resulting metallization structure.

摘要翻译： 铜金属化层和电介质阻挡膜之间的粘附可以通过使通过室排气的转向管中的含硅前体的流动稳定而得到促进。 然后将稳定的气流引入处理室，以在铜上精确地形成硅化物层。 该硅化步骤产生强的Cu-Si键的网络，其防止阻挡层的分层，而基本上不改变所得金属化结构的薄层电阻和其它电性能。

公开(公告)号：US20080099920A1

公开(公告)日：2008-05-01

申请号：US11876668

申请日：2007-10-22

申请人： Francimar Schmitt ,  Yi Zheng ,  Kang Yim ,  Sang Ahn ,  Lester D'Cruz ,  Dustin Ho ,  Alexandros Demos ,  Li-Qun Xia ,  Derek Witty ,  Hichem M'Saad

发明人： Francimar Schmitt ,  Yi Zheng ,  Kang Yim ,  Sang Ahn ,  Lester D'Cruz ,  Dustin Ho ,  Alexandros Demos ,  Li-Qun Xia ,  Derek Witty ,  Hichem M'Saad

IPC分类号： H01L23/538 ,  B32B3/00

CPC分类号： H01L21/76825 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/3105 ,  H01L21/3121 ,  H01L21/31695 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/7682 ,  H01L2221/1047 ,  Y10T428/249978

摘要： Embodiments in accordance with the present invention relate to multi-stage curing processes for chemical vapor deposited low K materials. In certain embodiments, a combination of electron beam irradiation and thermal exposure steps may be employed to control selective outgassing of porogens incorporated into the film, resulting in the formation of nanopores. In accordance with one specific embodiment, a low K layer resulting from reaction between a silicon-containing component and a non-silicon containing component featuring labile groups, may be cured by the initial application of thermal energy, followed by the application of radiation in the form of an electron beam.

摘要翻译： 根据本发明的实施方案涉及用于化学气相沉积的低K材料的多阶段固化方法。 在某些实施方案中，可以采用电子束照射和热暴露步骤的组合来控制掺入薄膜中的孔原子的选择性除气，从而形成纳米孔。 根据一个具体实施方案，由含硅组分和含有不稳定基团的不含硅组分之间的反应产生的低K层可以通过初始施加热能来固化，随后在 形式的电子束。

公开(公告)号：US20050230834A1

公开(公告)日：2005-10-20

申请号：US11085416

申请日：2005-03-21

申请人： Francimar Schmitt ,  Yi Zheng ,  Kang Yim ,  Sang Ahn ,  Lester D'Cruz ,  Dustin Ho ,  Alexandros Demos ,  Li-Qun Xia ,  Derek Witty ,  Hichem M'Saad

发明人： Francimar Schmitt ,  Yi Zheng ,  Kang Yim ,  Sang Ahn ,  Lester D'Cruz ,  Dustin Ho ,  Alexandros Demos ,  Li-Qun Xia ,  Derek Witty ,  Hichem M'Saad

IPC分类号： C23C16/40 ,  C23C16/50 ,  C23C16/56 ,  H01L21/3105 ,  H01L21/312 ,  H01L21/316 ,  H01L21/469 ,  H01L21/768 ,  H01L23/52

CPC分类号： H01L21/76825 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/3105 ,  H01L21/3121 ,  H01L21/31695 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/7682 ,  H01L2221/1047 ,  Y10T428/249978

摘要： Embodiments in accordance with the present invention relate to multi-stage curing processes for chemical vapor deposited low K materials. In certain embodiments, a combination of electron beam irradiation and thermal exposure steps may be employed to control selective outgassing of porogens incorporated into the film, resulting in the formation of nanopores. In accordance with one specific embodiment, a low K layer resulting from reaction between a silicon-containing component and a non-silicon containing component featuring labile groups, may be cured by the initial application of thermal energy, followed by the application of radiation in the form of an electron beam.

摘要翻译： 根据本发明的实施方案涉及用于化学气相沉积的低K材料的多阶段固化方法。 在某些实施方案中，可以采用电子束照射和热暴露步骤的组合来控制掺入薄膜中的孔原子的选择性除气，从而形成纳米孔。 根据一个具体实施方案，由含硅组分和含有不稳定基团的不含硅组分之间的反应产生的低K层可以通过初始施加热能来固化，随后在 形式的电子束。

公开(公告)号：US20060160374A1

公开(公告)日：2006-07-20

申请号：US11233988

申请日：2005-09-09

申请人： Dustin Ho ,  Derek Witty ,  Helen Armer ,  Hichem M'Saad

发明人： Dustin Ho ,  Derek Witty ,  Helen Armer ,  Hichem M'Saad

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/76801 ,  C23C16/401 ,  C23C16/4405 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/7682 ,  H01L21/76828 ,  H01L2221/1047

摘要： Nano-porous low dielectric constant films are deposited utilizing materials having reactive by-products readily removed from a processing chamber by plasma cleaning. In accordance with one embodiment, an oxidizable silicon containing compound is reacted with an oxidizable non-silicon component having thermally labile groups, in a reactive oxygen ambient and in the presence of a plasma. The deposited silicon oxide film is annealed to form dispersed microscopic voids or pores that remain in the nano-porous silicon. Oxidizable non-silicon components with thermally labile groups that leave by-products readily removed from the chamber, include but are not limited to, limonene, carene, cymene, fenchone, vinyl acetate, methyl methacrylate, ethyl vinyl ether, tetrahydrofuran, furan, 2,5 Norbornadiene, cyclopentene, cyclopentene oxide, methyl cyclopentene, 2-cyclopentene-1-one, and 1-butene.

公开(公告)号：US20060289795A1

公开(公告)日：2006-12-28

申请号：US11383383

申请日：2006-05-15

申请人： Dale Dubois ,  Juan Rocha-Alvarez ,  Amir Al-Bayati ,  Khaled Elsheref ,  Alexandros Demos ,  Lester D'Cruz ,  Hichem M'Saad ,  Ashish Shah ,  Takashi Shimizu ,  Naoyuki Iwasaki

发明人： Dale Dubois ,  Juan Rocha-Alvarez ,  Amir Al-Bayati ,  Khaled Elsheref ,  Alexandros Demos ,  Lester D'Cruz ,  Hichem M'Saad ,  Ashish Shah ,  Takashi Shimizu ,  Naoyuki Iwasaki

IPC分类号： G21G5/00

CPC分类号： H01J37/317 ,  H01J2237/2001

摘要： Methods and apparatus for electron beam treatment of a substrate are provided. An electron beam apparatus that includes a vacuum chamber, at least one thermocouple assembly in communication with the vacuum chamber; and a heating device in communication with the vacuum chamber and combinations thereof are provided. In one embodiment, the vacuum chamber comprises a cathode, an anode, and a substrate support. In another embodiment, the vacuum chamber comprises a grid located between the anode and the substrate support. In one embodiment the heating device comprises a first parallel light array and a second light array positioned such that the first parallel light array and the second light array intersect. In one embodiment the thermocouple assembly comprises a temperature sensor made of aluminum nitride.

摘要翻译： 提供了用于基板的电子束处理的方法和装置。 一种电子束装置，包括真空室，与真空室连通的至少一个热电偶组件; 并且提供与真空室连通的加热装置及其组合。 在一个实施例中，真空室包括阴极，阳极和衬底支撑件。 在另一个实施例中，真空室包括位于阳极和基板支撑件之间的格栅。 在一个实施例中，加热装置包括第一平行光阵列和第二光阵列，其定位成使得第一平行光阵列和第二光阵列相交。 在一个实施例中，热电偶组件包括由氮化铝制成的温度传感器。

公开(公告)号：US20070134435A1

公开(公告)日：2007-06-14

申请号：US11304847

申请日：2005-12-13

申请人： Sang Ahn ,  Alexandros Demos ,  Hichem M'Saad

发明人： Sang Ahn ,  Alexandros Demos ,  Hichem M'Saad

IPC分类号： C23C16/00 ,  C08J7/04

CPC分类号： C23C16/401 ,  C08J7/065 ,  C08J7/08 ,  C08J7/12 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/3105 ,  H01L21/31633

摘要： A method for depositing a low dielectric constant film on a substrate in a chamber from a mixture including two organosilicon compounds is provided. The mixture may further include a hydrocarbon compound and an oxidizing gas. The first organosilicon compound has an average of one or more Si—C bonds per Si atom. The second organosilicon compound has an average number of Si—C bonds per Si atom that is greater than the average number of Si—C bonds per Si atom in the first organosilicon compound. The low dielectric constant film has good plasma/wet etch damage resistance, good mechanical properties, and a desirable dielectric constant.

摘要翻译： 提供了一种从包含两种有机硅化合物的混合物在室中的衬底上沉积低介电常数膜的方法。 该混合物还可包括烃化合物和氧化气体。 第一有机硅化合物每Si原子平均具有一个或多个Si-C键。 第二有机硅化合物具有比Si原子中Si-C键的平均数大于第一有机硅化合物中每Si原子的Si-C键的平均数。 低介电常数膜具有良好的等离子/湿蚀刻损伤电阻，良好的机械性能和期望的介电常数。