公开(公告)号：US20040159951A1

公开(公告)日：2004-08-19

申请号：US10776202

申请日：2004-02-12

申请人： Kabushiki Kaisha Toshiba

发明人： Hiroshi Toyoda ,  Mitsuhiro Nakao ,  Masahiko Hasunuma ,  Hisashi Kaneko ,  Atsuko Sakata ,  Toshiaki Komukai

IPC分类号： H01L023/48

CPC分类号： H01L21/76846 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76858 ,  H01L21/76886 ,  H01L21/76888 ,  H01L22/32 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53295 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/0392 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05009 ,  H01L2224/05017 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05093 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05546 ,  H01L2224/05552 ,  H01L2224/05557 ,  H01L2224/05558 ,  H01L2224/05559 ,  H01L2224/05567 ,  H01L2224/05605 ,  H01L2224/05611 ,  H01L2224/05613 ,  H01L2224/05616 ,  H01L2224/0562 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/13099 ,  H01L2224/13105 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/1312 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/45105 ,  H01L2224/45109 ,  H01L2224/45111 ,  H01L2224/45113 ,  H01L2224/45116 ,  H01L2224/4512 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4807 ,  H01L2224/48453 ,  H01L2224/48463 ,  H01L2224/48505 ,  H01L2224/48611 ,  H01L2224/48616 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48711 ,  H01L2224/48716 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48747 ,  H01L2224/48799 ,  H01L2224/48805 ,  H01L2224/48811 ,  H01L2224/48813 ,  H01L2224/48816 ,  H01L2224/4882 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/85375 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01083 ,  H01L2924/01327 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/00014 ,  H01L2924/04941 ,  H01L2224/05609 ,  H01L2924/00 ,  H01L2224/48744 ,  H01L2224/48713 ,  H01L2224/48705 ,  H01L2224/4872 ,  H01L2224/48605 ,  H01L2224/48613 ,  H01L2224/4862 ,  H01L2924/00015

摘要： A semiconductor device, which is comprised of a copper wiring layer which is formed above a semiconductor substrate, a pad electrode layer which conducts electrically to the copper wiring layer and has an alloy, which contains copper and a metal whose oxidation tendency is higher than copper, formed to extend to the bottom surface, and an insulating protective film which has an opening extended to the pad electrode layer, is provided.

摘要翻译： 一种半导体器件，其由形成在半导体衬底上的铜布线层构成，该电极层与铜布线层电连接并具有合金，所述焊接电极层含有铜和氧化倾向高于铜的金属 形成为延伸到底表面，并且具有延伸到焊盘电极层的开口的绝缘保护膜。

公开(公告)号：US07675183B2

公开(公告)日：2010-03-09

申请号：US12081818

申请日：2008-04-22

申请人： Hiroshi Toyoda ,  Mitsuhiro Nakao ,  Masahiko Hasunuma ,  Hisashi Kaneko ,  Atsuko Sakata ,  Toshiaki Komukai

发明人： Hiroshi Toyoda ,  Mitsuhiro Nakao ,  Masahiko Hasunuma ,  Hisashi Kaneko ,  Atsuko Sakata ,  Toshiaki Komukai

IPC分类号： H01L23/48 ,  H01L23/52

CPC分类号： H01L21/76846 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76858 ,  H01L21/76886 ,  H01L21/76888 ,  H01L22/32 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53295 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/0392 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05009 ,  H01L2224/05017 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05093 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05546 ,  H01L2224/05552 ,  H01L2224/05557 ,  H01L2224/05558 ,  H01L2224/05559 ,  H01L2224/05567 ,  H01L2224/05605 ,  H01L2224/05611 ,  H01L2224/05613 ,  H01L2224/05616 ,  H01L2224/0562 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/13099 ,  H01L2224/13105 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/1312 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/45105 ,  H01L2224/45109 ,  H01L2224/45111 ,  H01L2224/45113 ,  H01L2224/45116 ,  H01L2224/4512 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4807 ,  H01L2224/48453 ,  H01L2224/48463 ,  H01L2224/48505 ,  H01L2224/48611 ,  H01L2224/48616 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48711 ,  H01L2224/48716 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48747 ,  H01L2224/48799 ,  H01L2224/48805 ,  H01L2224/48811 ,  H01L2224/48813 ,  H01L2224/48816 ,  H01L2224/4882 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/85375 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01083 ,  H01L2924/01327 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/00014 ,  H01L2924/04941 ,  H01L2224/05609 ,  H01L2924/00 ,  H01L2224/48744 ,  H01L2224/48713 ,  H01L2224/48705 ,  H01L2224/4872 ,  H01L2224/48605 ,  H01L2224/48613 ,  H01L2224/4862 ,  H01L2924/00015

摘要： A semiconductor device, which is comprised of a copper wiring layer which is formed above a semiconductor substrate, a pad electrode layer which conducts electrically to the copper wiring layer and has an alloy, which contains copper and a metal whose oxidation tendency is higher than copper, formed to extend to the bottom surface, and an insulating protective film which has an opening extended to the pad electrode layer, is provided.

摘要翻译： 一种半导体器件，其由形成在半导体衬底上的铜布线层构成，该电极层与铜布线层电连接并具有合金，所述焊接电极层含有铜和氧化倾向高于铜的金属 形成为延伸到底表面，并且具有延伸到焊盘电极层的开口的绝缘保护膜。

公开(公告)号：US20060113674A1

公开(公告)日：2006-06-01

申请号：US11329081

申请日：2006-01-11

申请人： Hiroshi Toyoda ,  Mitsuhiro Nakao ,  Masahiko Hasunuma ,  Hisashi Kaneko ,  Atsuko Sakata ,  Toshiaki Komukai

发明人： Hiroshi Toyoda ,  Mitsuhiro Nakao ,  Masahiko Hasunuma ,  Hisashi Kaneko ,  Atsuko Sakata ,  Toshiaki Komukai

IPC分类号： H01L23/48

CPC分类号： H01L21/76846 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76858 ,  H01L21/76886 ,  H01L21/76888 ,  H01L22/32 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53295 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/0392 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05009 ,  H01L2224/05017 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05093 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05546 ,  H01L2224/05552 ,  H01L2224/05557 ,  H01L2224/05558 ,  H01L2224/05559 ,  H01L2224/05567 ,  H01L2224/05605 ,  H01L2224/05611 ,  H01L2224/05613 ,  H01L2224/05616 ,  H01L2224/0562 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/13099 ,  H01L2224/13105 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/1312 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/45105 ,  H01L2224/45109 ,  H01L2224/45111 ,  H01L2224/45113 ,  H01L2224/45116 ,  H01L2224/4512 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4807 ,  H01L2224/48453 ,  H01L2224/48463 ,  H01L2224/48505 ,  H01L2224/48611 ,  H01L2224/48616 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48711 ,  H01L2224/48716 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48747 ,  H01L2224/48799 ,  H01L2224/48805 ,  H01L2224/48811 ,  H01L2224/48813 ,  H01L2224/48816 ,  H01L2224/4882 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/85375 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01083 ,  H01L2924/01327 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/00014 ,  H01L2924/04941 ,  H01L2224/05609 ,  H01L2924/00 ,  H01L2224/48744 ,  H01L2224/48713 ,  H01L2224/48705 ,  H01L2224/4872 ,  H01L2224/48605 ,  H01L2224/48613 ,  H01L2224/4862 ,  H01L2924/00015

摘要： A semiconductor device, which is comprised of a copper wiring layer which is formed above a semiconductor substrate, a pad electrode layer which conducts electrically to the copper wiring layer and has an alloy, which contains copper and a metal whose oxidation tendency is higher than copper, formed to extend to the bottom surface, and an insulating protective film which has an opening extended to the pad electrode layer, is provided.

公开(公告)号：US20020121703A1

公开(公告)日：2002-09-05

申请号：US10084065

申请日：2002-02-28

申请人： KABUSHI KAISHA TOSHIBA

发明人： Hiroshi Toyoda ,  Mitsuhiro Nakao ,  Masahiko Hasunuma ,  Hisashi Kaneko ,  Atsuko Sakata ,  Toshiaki Komukai

IPC分类号： H01L029/40 ,  H01L023/52 ,  H01L023/48

CPC分类号： H01L21/76846 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76858 ,  H01L21/76886 ,  H01L21/76888 ,  H01L22/32 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53295 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/0392 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05009 ,  H01L2224/05017 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05093 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05546 ,  H01L2224/05552 ,  H01L2224/05557 ,  H01L2224/05558 ,  H01L2224/05559 ,  H01L2224/05567 ,  H01L2224/05605 ,  H01L2224/05611 ,  H01L2224/05613 ,  H01L2224/05616 ,  H01L2224/0562 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/13099 ,  H01L2224/13105 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/1312 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/45105 ,  H01L2224/45109 ,  H01L2224/45111 ,  H01L2224/45113 ,  H01L2224/45116 ,  H01L2224/4512 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4807 ,  H01L2224/48453 ,  H01L2224/48463 ,  H01L2224/48505 ,  H01L2224/48611 ,  H01L2224/48616 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48711 ,  H01L2224/48716 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48747 ,  H01L2224/48799 ,  H01L2224/48805 ,  H01L2224/48811 ,  H01L2224/48813 ,  H01L2224/48816 ,  H01L2224/4882 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/85375 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01083 ,  H01L2924/01327 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/00014 ,  H01L2924/04941 ,  H01L2224/05609 ,  H01L2924/00 ,  H01L2224/48744 ,  H01L2224/48713 ,  H01L2224/48705 ,  H01L2224/4872 ,  H01L2224/48605 ,  H01L2224/48613 ,  H01L2224/4862 ,  H01L2924/00015

摘要： A semiconductor device, which is comprised of a copper wiring layer which is formed above a semiconductor substrate, a pad electrode layer which conducts electrically to the copper wiring layer and has an alloy, which contains copper and a metal whose oxidation tendency is higher than copper, formed to extend to the bottom surface, and an insulating protective film which has an opening extended to the pad electrode layer, is provided.

摘要翻译： 一种半导体器件，其由形成在半导体衬底上的铜布线层构成，该电极层与铜布线层电连接并具有合金，所述焊接电极层含有铜和氧化倾向高于铜的金属 形成为延伸到底表面，并且具有延伸到焊盘电极层的开口的绝缘保护膜。

公开(公告)号：US20080237863A1

公开(公告)日：2008-10-02

申请号：US12081818

申请日：2008-04-22

申请人： Hiroshi Toyoda ,  Mitsuhiro Nakao ,  Masahiko Hasunuma ,  Hisashi Kaneko ,  Atsuko Sakata ,  Toshiaki Komukai

发明人： Hiroshi Toyoda ,  Mitsuhiro Nakao ,  Masahiko Hasunuma ,  Hisashi Kaneko ,  Atsuko Sakata ,  Toshiaki Komukai

IPC分类号： H01L23/49

CPC分类号： H01L21/76846 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76858 ,  H01L21/76886 ,  H01L21/76888 ,  H01L22/32 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53295 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/0392 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05009 ,  H01L2224/05017 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05093 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05546 ,  H01L2224/05552 ,  H01L2224/05557 ,  H01L2224/05558 ,  H01L2224/05559 ,  H01L2224/05567 ,  H01L2224/05605 ,  H01L2224/05611 ,  H01L2224/05613 ,  H01L2224/05616 ,  H01L2224/0562 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/13099 ,  H01L2224/13105 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/1312 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/45105 ,  H01L2224/45109 ,  H01L2224/45111 ,  H01L2224/45113 ,  H01L2224/45116 ,  H01L2224/4512 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4807 ,  H01L2224/48453 ,  H01L2224/48463 ,  H01L2224/48505 ,  H01L2224/48611 ,  H01L2224/48616 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48711 ,  H01L2224/48716 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48747 ,  H01L2224/48799 ,  H01L2224/48805 ,  H01L2224/48811 ,  H01L2224/48813 ,  H01L2224/48816 ,  H01L2224/4882 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/85375 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01083 ,  H01L2924/01327 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/00014 ,  H01L2924/04941 ,  H01L2224/05609 ,  H01L2924/00 ,  H01L2224/48744 ,  H01L2224/48713 ,  H01L2224/48705 ,  H01L2224/4872 ,  H01L2224/48605 ,  H01L2224/48613 ,  H01L2224/4862 ,  H01L2924/00015

摘要： A semiconductor device, which is comprised of a copper wiring layer which is formed above a semiconductor substrate, a pad electrode layer which conducts electrically to the copper wiring layer and has an alloy, which contains copper and a metal whose oxidation tendency is higher than copper, formed to extend to the bottom surface, and an insulating protective film which has an opening extended to the pad electrode layer, is provided.

摘要翻译： 一种半导体器件，其由形成在半导体衬底上的铜布线层构成，该电极层与铜布线层电连接并具有合金，所述焊接电极层含有铜和氧化倾向高于铜的金属 形成为延伸到底表面，并且具有延伸到焊盘电极层的开口的绝缘保护膜。

公开(公告)号：US06727593B2

公开(公告)日：2004-04-27

申请号：US10084065

申请日：2002-02-28

申请人： Hiroshi Toyoda ,  Mitsuhiro Nakao ,  Masahiko Hasunuma ,  Hisashi Kaneko ,  Atsuko Sakata ,  Toshiaki Komukai

发明人： Hiroshi Toyoda ,  Mitsuhiro Nakao ,  Masahiko Hasunuma ,  Hisashi Kaneko ,  Atsuko Sakata ,  Toshiaki Komukai

IPC分类号： H01L2348

CPC分类号： H01L21/76846 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76858 ,  H01L21/76886 ,  H01L21/76888 ,  H01L22/32 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53295 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/0392 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05009 ,  H01L2224/05017 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05093 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05546 ,  H01L2224/05552 ,  H01L2224/05557 ,  H01L2224/05558 ,  H01L2224/05559 ,  H01L2224/05567 ,  H01L2224/05605 ,  H01L2224/05611 ,  H01L2224/05613 ,  H01L2224/05616 ,  H01L2224/0562 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/13099 ,  H01L2224/13105 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/1312 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/45105 ,  H01L2224/45109 ,  H01L2224/45111 ,  H01L2224/45113 ,  H01L2224/45116 ,  H01L2224/4512 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4807 ,  H01L2224/48453 ,  H01L2224/48463 ,  H01L2224/48505 ,  H01L2224/48611 ,  H01L2224/48616 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48711 ,  H01L2224/48716 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48747 ,  H01L2224/48799 ,  H01L2224/48805 ,  H01L2224/48811 ,  H01L2224/48813 ,  H01L2224/48816 ,  H01L2224/4882 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/85375 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01083 ,  H01L2924/01327 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/00014 ,  H01L2924/04941 ,  H01L2224/05609 ,  H01L2924/00 ,  H01L2224/48744 ,  H01L2224/48713 ,  H01L2224/48705 ,  H01L2224/4872 ,  H01L2224/48605 ,  H01L2224/48613 ,  H01L2224/4862 ,  H01L2924/00015

摘要： A semiconductor device, which is comprised of a copper wiring layer which is formed above a semiconductor substrate, a pad electrode layer which conducts electrically to the copper wiring layer and has an alloy, which contains copper and a metal whose oxidation tendency is higher than copper, formed to extend to the bottom surface, and an insulating protective film which has an opening extended to the pad electrode layer, is provided.

摘要翻译： 一种半导体器件，其由形成在半导体衬底上的铜布线层构成，该电极层与铜布线层电连接并具有合金，所述焊接电极层含有铜和氧化倾向高于铜的金属 形成为延伸到底表面，并且具有延伸到焊盘电极层的开口的绝缘保护膜。