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1.发明授权公开(公告)号：US07675183B2
公开(公告)日：2010-03-09
申请号：US12081818
申请日：2008-04-22
申请人： Hiroshi Toyoda , Mitsuhiro Nakao , Masahiko Hasunuma , Hisashi Kaneko , Atsuko Sakata , Toshiaki Komukai
发明人： Hiroshi Toyoda , Mitsuhiro Nakao , Masahiko Hasunuma , Hisashi Kaneko , Atsuko Sakata , Toshiaki Komukai
CPC分类号： H01L21/76846 , H01L21/76834 , H01L21/76849 , H01L21/76858 , H01L21/76886 , H01L21/76888 , H01L22/32 , H01L23/53233 , H01L23/53238 , H01L23/53295 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/45 , H01L24/48 , H01L2224/02166 , H01L2224/0392 , H01L2224/0401 , H01L2224/04042 , H01L2224/05009 , H01L2224/05017 , H01L2224/05082 , H01L2224/05083 , H01L2224/05093 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05187 , H01L2224/05546 , H01L2224/05552 , H01L2224/05557 , H01L2224/05558 , H01L2224/05559 , H01L2224/05567 , H01L2224/05605 , H01L2224/05611 , H01L2224/05613 , H01L2224/05616 , H01L2224/0562 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/13099 , H01L2224/13105 , H01L2224/13109 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/1312 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/45105 , H01L2224/45109 , H01L2224/45111 , H01L2224/45113 , H01L2224/45116 , H01L2224/4512 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/4807 , H01L2224/48453 , H01L2224/48463 , H01L2224/48505 , H01L2224/48611 , H01L2224/48616 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48711 , H01L2224/48716 , H01L2224/48724 , H01L2224/48739 , H01L2224/48747 , H01L2224/48799 , H01L2224/48805 , H01L2224/48811 , H01L2224/48813 , H01L2224/48816 , H01L2224/4882 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/85375 , H01L2924/0002 , H01L2924/01006 , H01L2924/01007 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01031 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01083 , H01L2924/01327 , H01L2924/04953 , H01L2924/05042 , H01L2924/10253 , H01L2924/12042 , H01L2924/00014 , H01L2924/04941 , H01L2224/05609 , H01L2924/00 , H01L2224/48744 , H01L2224/48713 , H01L2224/48705 , H01L2224/4872 , H01L2224/48605 , H01L2224/48613 , H01L2224/4862 , H01L2924/00015
摘要： A semiconductor device, which is comprised of a copper wiring layer which is formed above a semiconductor substrate, a pad electrode layer which conducts electrically to the copper wiring layer and has an alloy, which contains copper and a metal whose oxidation tendency is higher than copper, formed to extend to the bottom surface, and an insulating protective film which has an opening extended to the pad electrode layer, is provided.
摘要翻译： 一种半导体器件，其由形成在半导体衬底上的铜布线层构成，该电极层与铜布线层电连接并具有合金，所述焊接电极层含有铜和氧化倾向高于铜的金属 形成为延伸到底表面，并且具有延伸到焊盘电极层的开口的绝缘保护膜。
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公开(公告)号：US20080237863A1
公开(公告)日：2008-10-02
申请号：US12081818
申请日：2008-04-22
申请人： Hiroshi Toyoda , Mitsuhiro Nakao , Masahiko Hasunuma , Hisashi Kaneko , Atsuko Sakata , Toshiaki Komukai
发明人： Hiroshi Toyoda , Mitsuhiro Nakao , Masahiko Hasunuma , Hisashi Kaneko , Atsuko Sakata , Toshiaki Komukai
IPC分类号： H01L23/49
CPC分类号： H01L21/76846 , H01L21/76834 , H01L21/76849 , H01L21/76858 , H01L21/76886 , H01L21/76888 , H01L22/32 , H01L23/53233 , H01L23/53238 , H01L23/53295 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/45 , H01L24/48 , H01L2224/02166 , H01L2224/0392 , H01L2224/0401 , H01L2224/04042 , H01L2224/05009 , H01L2224/05017 , H01L2224/05082 , H01L2224/05083 , H01L2224/05093 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05187 , H01L2224/05546 , H01L2224/05552 , H01L2224/05557 , H01L2224/05558 , H01L2224/05559 , H01L2224/05567 , H01L2224/05605 , H01L2224/05611 , H01L2224/05613 , H01L2224/05616 , H01L2224/0562 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/13099 , H01L2224/13105 , H01L2224/13109 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/1312 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/45105 , H01L2224/45109 , H01L2224/45111 , H01L2224/45113 , H01L2224/45116 , H01L2224/4512 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/4807 , H01L2224/48453 , H01L2224/48463 , H01L2224/48505 , H01L2224/48611 , H01L2224/48616 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48711 , H01L2224/48716 , H01L2224/48724 , H01L2224/48739 , H01L2224/48747 , H01L2224/48799 , H01L2224/48805 , H01L2224/48811 , H01L2224/48813 , H01L2224/48816 , H01L2224/4882 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/85375 , H01L2924/0002 , H01L2924/01006 , H01L2924/01007 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01031 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01083 , H01L2924/01327 , H01L2924/04953 , H01L2924/05042 , H01L2924/10253 , H01L2924/12042 , H01L2924/00014 , H01L2924/04941 , H01L2224/05609 , H01L2924/00 , H01L2224/48744 , H01L2224/48713 , H01L2224/48705 , H01L2224/4872 , H01L2224/48605 , H01L2224/48613 , H01L2224/4862 , H01L2924/00015
摘要： A semiconductor device, which is comprised of a copper wiring layer which is formed above a semiconductor substrate, a pad electrode layer which conducts electrically to the copper wiring layer and has an alloy, which contains copper and a metal whose oxidation tendency is higher than copper, formed to extend to the bottom surface, and an insulating protective film which has an opening extended to the pad electrode layer, is provided.
摘要翻译： 一种半导体器件，其由形成在半导体衬底上的铜布线层构成，该电极层与铜布线层电连接并具有合金，所述焊接电极层含有铜和氧化倾向高于铜的金属 形成为延伸到底表面，并且具有延伸到焊盘电极层的开口的绝缘保护膜。
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公开(公告)号：US06727593B2
公开(公告)日：2004-04-27
申请号：US10084065
申请日：2002-02-28
申请人： Hiroshi Toyoda , Mitsuhiro Nakao , Masahiko Hasunuma , Hisashi Kaneko , Atsuko Sakata , Toshiaki Komukai
发明人： Hiroshi Toyoda , Mitsuhiro Nakao , Masahiko Hasunuma , Hisashi Kaneko , Atsuko Sakata , Toshiaki Komukai
IPC分类号： H01L2348
CPC分类号： H01L21/76846 , H01L21/76834 , H01L21/76849 , H01L21/76858 , H01L21/76886 , H01L21/76888 , H01L22/32 , H01L23/53233 , H01L23/53238 , H01L23/53295 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/45 , H01L24/48 , H01L2224/02166 , H01L2224/0392 , H01L2224/0401 , H01L2224/04042 , H01L2224/05009 , H01L2224/05017 , H01L2224/05082 , H01L2224/05083 , H01L2224/05093 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05187 , H01L2224/05546 , H01L2224/05552 , H01L2224/05557 , H01L2224/05558 , H01L2224/05559 , H01L2224/05567 , H01L2224/05605 , H01L2224/05611 , H01L2224/05613 , H01L2224/05616 , H01L2224/0562 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/13099 , H01L2224/13105 , H01L2224/13109 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/1312 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/45105 , H01L2224/45109 , H01L2224/45111 , H01L2224/45113 , H01L2224/45116 , H01L2224/4512 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/4807 , H01L2224/48453 , H01L2224/48463 , H01L2224/48505 , H01L2224/48611 , H01L2224/48616 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48711 , H01L2224/48716 , H01L2224/48724 , H01L2224/48739 , H01L2224/48747 , H01L2224/48799 , H01L2224/48805 , H01L2224/48811 , H01L2224/48813 , H01L2224/48816 , H01L2224/4882 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/85375 , H01L2924/0002 , H01L2924/01006 , H01L2924/01007 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01031 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01083 , H01L2924/01327 , H01L2924/04953 , H01L2924/05042 , H01L2924/10253 , H01L2924/12042 , H01L2924/00014 , H01L2924/04941 , H01L2224/05609 , H01L2924/00 , H01L2224/48744 , H01L2224/48713 , H01L2224/48705 , H01L2224/4872 , H01L2224/48605 , H01L2224/48613 , H01L2224/4862 , H01L2924/00015
摘要： A semiconductor device, which is comprised of a copper wiring layer which is formed above a semiconductor substrate, a pad electrode layer which conducts electrically to the copper wiring layer and has an alloy, which contains copper and a metal whose oxidation tendency is higher than copper, formed to extend to the bottom surface, and an insulating protective film which has an opening extended to the pad electrode layer, is provided.
摘要翻译： 一种半导体器件，其由形成在半导体衬底上的铜布线层构成，该电极层与铜布线层电连接并具有合金，所述焊接电极层含有铜和氧化倾向高于铜的金属 形成为延伸到底表面，并且具有延伸到焊盘电极层的开口的绝缘保护膜。
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公开(公告)号：US08487452B2
公开(公告)日：2013-07-16
申请号：US13175406
申请日：2011-07-01
申请人： Jin-Yang Lee , Chan-Min Han , Kil-Soo Kim
发明人： Jin-Yang Lee , Chan-Min Han , Kil-Soo Kim
IPC分类号： H01L23/48
CPC分类号： H01L25/0657 , H01L23/3121 , H01L24/05 , H01L24/06 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/73 , H01L2224/0401 , H01L2224/05554 , H01L2224/05611 , H01L2224/05613 , H01L2224/05616 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05669 , H01L2224/06155 , H01L2224/16145 , H01L2224/16225 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48145 , H01L2224/48225 , H01L2224/48227 , H01L2224/48611 , H01L2224/48616 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/48669 , H01L2224/48711 , H01L2224/48716 , H01L2224/48739 , H01L2224/48747 , H01L2224/48755 , H01L2224/48769 , H01L2224/49175 , H01L2224/73265 , H01L2225/06506 , H01L2225/0651 , H01L2225/06562 , H01L2924/00014 , H01L2924/01013 , H01L2924/01028 , H01L2924/01079 , H01L2924/10161 , H01L2924/1434 , H01L2924/1438 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/00 , H01L2924/3512 , H01L2224/48744 , H01L2224/48713 , H01L2224/48613 , H01L2924/00012 , H01L2224/45099
摘要： A semiconductor package includes a substrate, a first semiconductor chip stacked on the substrate and a second semiconductor chip stacked on the first semiconductor chip. In the semiconductor package, the second semiconductor chip is rotated to be stacked on the first semiconductor chip. The semiconductor package is used in an electronic system.
摘要翻译： 半导体封装包括衬底，堆叠在衬底上的第一半导体芯片和堆叠在第一半导体芯片上的第二半导体芯片。 在半导体封装中，第二半导体芯片被旋转以堆叠在第一半导体芯片上。 半导体封装用于电子系统。
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公开(公告)号：US20060113674A1
公开(公告)日：2006-06-01
申请号：US11329081
申请日：2006-01-11
申请人： Hiroshi Toyoda , Mitsuhiro Nakao , Masahiko Hasunuma , Hisashi Kaneko , Atsuko Sakata , Toshiaki Komukai
发明人： Hiroshi Toyoda , Mitsuhiro Nakao , Masahiko Hasunuma , Hisashi Kaneko , Atsuko Sakata , Toshiaki Komukai
IPC分类号： H01L23/48
CPC分类号： H01L21/76846 , H01L21/76834 , H01L21/76849 , H01L21/76858 , H01L21/76886 , H01L21/76888 , H01L22/32 , H01L23/53233 , H01L23/53238 , H01L23/53295 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/45 , H01L24/48 , H01L2224/02166 , H01L2224/0392 , H01L2224/0401 , H01L2224/04042 , H01L2224/05009 , H01L2224/05017 , H01L2224/05082 , H01L2224/05083 , H01L2224/05093 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05187 , H01L2224/05546 , H01L2224/05552 , H01L2224/05557 , H01L2224/05558 , H01L2224/05559 , H01L2224/05567 , H01L2224/05605 , H01L2224/05611 , H01L2224/05613 , H01L2224/05616 , H01L2224/0562 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/13099 , H01L2224/13105 , H01L2224/13109 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/1312 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/45105 , H01L2224/45109 , H01L2224/45111 , H01L2224/45113 , H01L2224/45116 , H01L2224/4512 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/4807 , H01L2224/48453 , H01L2224/48463 , H01L2224/48505 , H01L2224/48611 , H01L2224/48616 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48711 , H01L2224/48716 , H01L2224/48724 , H01L2224/48739 , H01L2224/48747 , H01L2224/48799 , H01L2224/48805 , H01L2224/48811 , H01L2224/48813 , H01L2224/48816 , H01L2224/4882 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/85375 , H01L2924/0002 , H01L2924/01006 , H01L2924/01007 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01031 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01083 , H01L2924/01327 , H01L2924/04953 , H01L2924/05042 , H01L2924/10253 , H01L2924/12042 , H01L2924/00014 , H01L2924/04941 , H01L2224/05609 , H01L2924/00 , H01L2224/48744 , H01L2224/48713 , H01L2224/48705 , H01L2224/4872 , H01L2224/48605 , H01L2224/48613 , H01L2224/4862 , H01L2924/00015
摘要： A semiconductor device, which is comprised of a copper wiring layer which is formed above a semiconductor substrate, a pad electrode layer which conducts electrically to the copper wiring layer and has an alloy, which contains copper and a metal whose oxidation tendency is higher than copper, formed to extend to the bottom surface, and an insulating protective film which has an opening extended to the pad electrode layer, is provided.
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公开(公告)号：US20020121703A1
公开(公告)日：2002-09-05
申请号：US10084065
申请日：2002-02-28
发明人： Hiroshi Toyoda , Mitsuhiro Nakao , Masahiko Hasunuma , Hisashi Kaneko , Atsuko Sakata , Toshiaki Komukai
IPC分类号： H01L029/40 , H01L023/52 , H01L023/48
CPC分类号： H01L21/76846 , H01L21/76834 , H01L21/76849 , H01L21/76858 , H01L21/76886 , H01L21/76888 , H01L22/32 , H01L23/53233 , H01L23/53238 , H01L23/53295 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/45 , H01L24/48 , H01L2224/02166 , H01L2224/0392 , H01L2224/0401 , H01L2224/04042 , H01L2224/05009 , H01L2224/05017 , H01L2224/05082 , H01L2224/05083 , H01L2224/05093 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05187 , H01L2224/05546 , H01L2224/05552 , H01L2224/05557 , H01L2224/05558 , H01L2224/05559 , H01L2224/05567 , H01L2224/05605 , H01L2224/05611 , H01L2224/05613 , H01L2224/05616 , H01L2224/0562 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/13099 , H01L2224/13105 , H01L2224/13109 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/1312 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/45105 , H01L2224/45109 , H01L2224/45111 , H01L2224/45113 , H01L2224/45116 , H01L2224/4512 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/4807 , H01L2224/48453 , H01L2224/48463 , H01L2224/48505 , H01L2224/48611 , H01L2224/48616 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48711 , H01L2224/48716 , H01L2224/48724 , H01L2224/48739 , H01L2224/48747 , H01L2224/48799 , H01L2224/48805 , H01L2224/48811 , H01L2224/48813 , H01L2224/48816 , H01L2224/4882 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/85375 , H01L2924/0002 , H01L2924/01006 , H01L2924/01007 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01031 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01083 , H01L2924/01327 , H01L2924/04953 , H01L2924/05042 , H01L2924/10253 , H01L2924/12042 , H01L2924/00014 , H01L2924/04941 , H01L2224/05609 , H01L2924/00 , H01L2224/48744 , H01L2224/48713 , H01L2224/48705 , H01L2224/4872 , H01L2224/48605 , H01L2224/48613 , H01L2224/4862 , H01L2924/00015
摘要： A semiconductor device, which is comprised of a copper wiring layer which is formed above a semiconductor substrate, a pad electrode layer which conducts electrically to the copper wiring layer and has an alloy, which contains copper and a metal whose oxidation tendency is higher than copper, formed to extend to the bottom surface, and an insulating protective film which has an opening extended to the pad electrode layer, is provided.
摘要翻译： 一种半导体器件，其由形成在半导体衬底上的铜布线层构成，该电极层与铜布线层电连接并具有合金，所述焊接电极层含有铜和氧化倾向高于铜的金属 形成为延伸到底表面，并且具有延伸到焊盘电极层的开口的绝缘保护膜。
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公开(公告)号：US20120001347A1
公开(公告)日：2012-01-05
申请号：US13175406
申请日：2011-07-01
申请人： Jin-Yang LEE , Chan-Min HAN , Kil-Soo KIM
发明人： Jin-Yang LEE , Chan-Min HAN , Kil-Soo KIM
IPC分类号： H01L23/52
CPC分类号： H01L25/0657 , H01L23/3121 , H01L24/05 , H01L24/06 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/73 , H01L2224/0401 , H01L2224/05554 , H01L2224/05611 , H01L2224/05613 , H01L2224/05616 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05669 , H01L2224/06155 , H01L2224/16145 , H01L2224/16225 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48145 , H01L2224/48225 , H01L2224/48227 , H01L2224/48611 , H01L2224/48616 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/48669 , H01L2224/48711 , H01L2224/48716 , H01L2224/48739 , H01L2224/48747 , H01L2224/48755 , H01L2224/48769 , H01L2224/49175 , H01L2224/73265 , H01L2225/06506 , H01L2225/0651 , H01L2225/06562 , H01L2924/00014 , H01L2924/01013 , H01L2924/01028 , H01L2924/01079 , H01L2924/10161 , H01L2924/1434 , H01L2924/1438 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/00 , H01L2924/3512 , H01L2224/48744 , H01L2224/48713 , H01L2224/48613 , H01L2924/00012 , H01L2224/45099
摘要： A semiconductor package includes a substrate, a first semiconductor chip stacked on the substrate and a second semiconductor chip stacked on the first semiconductor chip. In the semiconductor package, the second semiconductor chip is rotated to be stacked on the first semiconductor chip. The semiconductor package is used in an electronic system.
摘要翻译： 半导体封装包括衬底，堆叠在衬底上的第一半导体芯片和堆叠在第一半导体芯片上的第二半导体芯片。 在半导体封装中，第二半导体芯片被旋转以堆叠在第一半导体芯片上。 半导体封装用于电子系统。
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公开(公告)号：US20080006937A1
公开(公告)日：2008-01-10
申请号：US11426157
申请日：2006-06-23
申请人： Akira Matsunami
发明人： Akira Matsunami
CPC分类号： H01L23/49548 , H01L23/49582 , H01L24/45 , H01L24/48 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48247 , H01L2224/484 , H01L2224/48599 , H01L2224/48611 , H01L2224/48613 , H01L2224/48644 , H01L2224/48664 , H01L2224/48699 , H01L2224/48711 , H01L2224/48713 , H01L2224/48744 , H01L2224/48764 , H01L2224/48811 , H01L2224/48813 , H01L2224/48844 , H01L2224/48864 , H01L2224/85411 , H01L2224/85413 , H01L2224/85444 , H01L2224/85464 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01057 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/014 , H01L2924/1301 , H01L2924/14 , H01L2924/1461 , H01L2924/181 , H01L2924/19041 , H01L2924/351 , H05K3/3426 , H05K2201/10689 , H05K2201/10795 , H05K2201/10909 , Y02P70/613 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A microelectronic device package that includes a microelectronic device encapsulated within a packaging material. The microelectronic device package also includes a lead attached to a portion of the microelectronic device extending through the packaging material. The lead has a break portion and a non-break portion on a tip of the lead.
摘要翻译： 一种微电子器件封装，其包括封装在封装材料内的微电子器件。 微电子器件封装还包括附接到延伸穿过包装材料的微电子器件的一部分的引线。 引线在引线的尖端上具有断裂部分和非断裂部分。
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9.发明申请公开(公告)号：US20040159951A1
公开(公告)日：2004-08-19
申请号：US10776202
申请日：2004-02-12
发明人： Hiroshi Toyoda , Mitsuhiro Nakao , Masahiko Hasunuma , Hisashi Kaneko , Atsuko Sakata , Toshiaki Komukai
IPC分类号： H01L023/48
CPC分类号： H01L21/76846 , H01L21/76834 , H01L21/76849 , H01L21/76858 , H01L21/76886 , H01L21/76888 , H01L22/32 , H01L23/53233 , H01L23/53238 , H01L23/53295 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/45 , H01L24/48 , H01L2224/02166 , H01L2224/0392 , H01L2224/0401 , H01L2224/04042 , H01L2224/05009 , H01L2224/05017 , H01L2224/05082 , H01L2224/05083 , H01L2224/05093 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05187 , H01L2224/05546 , H01L2224/05552 , H01L2224/05557 , H01L2224/05558 , H01L2224/05559 , H01L2224/05567 , H01L2224/05605 , H01L2224/05611 , H01L2224/05613 , H01L2224/05616 , H01L2224/0562 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/13099 , H01L2224/13105 , H01L2224/13109 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/1312 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/45105 , H01L2224/45109 , H01L2224/45111 , H01L2224/45113 , H01L2224/45116 , H01L2224/4512 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/4807 , H01L2224/48453 , H01L2224/48463 , H01L2224/48505 , H01L2224/48611 , H01L2224/48616 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/48711 , H01L2224/48716 , H01L2224/48724 , H01L2224/48739 , H01L2224/48747 , H01L2224/48799 , H01L2224/48805 , H01L2224/48811 , H01L2224/48813 , H01L2224/48816 , H01L2224/4882 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48847 , H01L2224/85375 , H01L2924/0002 , H01L2924/01006 , H01L2924/01007 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01031 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01083 , H01L2924/01327 , H01L2924/04953 , H01L2924/05042 , H01L2924/10253 , H01L2924/12042 , H01L2924/00014 , H01L2924/04941 , H01L2224/05609 , H01L2924/00 , H01L2224/48744 , H01L2224/48713 , H01L2224/48705 , H01L2224/4872 , H01L2224/48605 , H01L2224/48613 , H01L2224/4862 , H01L2924/00015
摘要： A semiconductor device, which is comprised of a copper wiring layer which is formed above a semiconductor substrate, a pad electrode layer which conducts electrically to the copper wiring layer and has an alloy, which contains copper and a metal whose oxidation tendency is higher than copper, formed to extend to the bottom surface, and an insulating protective film which has an opening extended to the pad electrode layer, is provided.
摘要翻译： 一种半导体器件，其由形成在半导体衬底上的铜布线层构成，该电极层与铜布线层电连接并具有合金，所述焊接电极层含有铜和氧化倾向高于铜的金属 形成为延伸到底表面，并且具有延伸到焊盘电极层的开口的绝缘保护膜。
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