公开(公告)号：US20240363334A1

公开(公告)日：2024-10-31

申请号：US18609345

申请日：2024-03-19

申请人： Kokusai Electric Corporation

发明人： Keitaro HAMADA ,  Masaya NISHIDA

IPC分类号： H01L21/02 ,  C23C16/34 ,  C23C16/455 ,  C23C16/52

CPC分类号： H01L21/02118 ,  C23C16/347 ,  C23C16/45527 ,  C23C16/45544 ,  C23C16/52 ,  H01L21/0228

摘要： There is provided a technique that includes: (a) performing a cycle including supplying a source containing a predetermined element, carbon, and hydrogen to a substrate and supplying a first modifying agent containing nitrogen to the substrate, a predetermined number of times to form, on the substrate, a first film containing the predetermined element, nitrogen, carbon, and hydrogen bonded to carbon; and (b) supplying, to the substrate on which the first film is formed, a second modifying agent that is different from the first modifying agent and contains a compound containing a nitrogen-hydrogen bond and a nitrogen-nitrogen bond per molecule or a derivative of the compound, to modify the first film to a second film that is lower in content rate of the hydrogen bonded to carbon than the first film and contains the predetermined element, carbon, and nitrogen.

公开(公告)号：US12116660B2

公开(公告)日：2024-10-15

申请号：US17383787

申请日：2021-07-23

申请人： Samsung Display Co., Ltd.

发明人： Ji-Hee Son ,  Minho Moon ,  Youngmin Moon ,  Seungyong Song ,  Seul Lee ,  Sungsoon Im

IPC分类号： C23C14/04 ,  C23C16/34 ,  C23C16/40 ,  C23C16/56 ,  G03F7/00 ,  G03F7/16 ,  C23C14/24 ,  C23C14/34 ,  H10K59/12 ,  H10K71/16

CPC分类号： C23C14/042 ,  C23C16/345 ,  C23C16/401 ,  C23C16/56 ,  G03F7/0015 ,  G03F7/167 ,  C23C14/24 ,  C23C14/34 ,  H10K59/12 ,  H10K71/166

摘要： A mask, a mask assembly, and a method of fabricating a mask are disclosed herein. The mask comprises a polymer film in which at least one cell region and at least one peripheral region are defined, the at least one peripheral region surrounding the at least one cell region, a conductive layer disposed on the polymer film and including a metal, an inorganic layer disposed between the polymer film and the conductive layer and including a silicon-based inorganic material, and holes that penetrate the polymer film, the conductive layer, and the inorganic layer and overlap the at least one cell region in a plan view.

公开(公告)号：US12109628B2

公开(公告)日：2024-10-08

申请号：US17885233

申请日：2022-08-10

申请人： ISCAR, LTD.

发明人： Marcel Elkouby ,  Tomer Weinberger ,  Anton Nikitin

IPC分类号： B32B27/14 ,  B23B27/14 ,  C23C16/34 ,  C23C16/36 ,  C23C16/56

CPC分类号： B23B27/148 ,  C23C16/34 ,  C23C16/36 ,  C23C16/56 ,  B23B2228/04 ,  B23B2228/10

摘要： A metal cutting insert has a substrate body of cemented carbide, cermet, or ceramic and at least one cutting edge defined between a rake face and a relief face. The cutting insert has a CVD coating including a layer of aluminum titanium nitride having a cubic face centered lattice structure, represented by a formula (AlxTi1-xMy)CzN1-z wherein a stoichiometry coefficient of aluminum is 0.30

公开(公告)号：US20240327984A1

公开(公告)日：2024-10-03

申请号：US18615087

申请日：2024-03-25

申请人： Tokyo Electron Limited

发明人： Tuhin Shuvra Basu ,  Hiroto FUJIKAWA ,  Yutaka MOTOYAMA ,  Keita KUMAGAI

IPC分类号： C23C16/455 ,  C23C16/24 ,  C23C16/34 ,  C23C16/40 ,  C23C16/52

CPC分类号： C23C16/45553 ,  C23C16/24 ,  C23C16/345 ,  C23C16/402 ,  C23C16/52

摘要： A film forming method for forming a silicon film on a substrate, includes preparing a substrate having a first film and a second film on a surface thereof, supplying a growth inhibiting gas that inhibits growth of the silicon film to the substrate, to cause physical adsorption of the growth inhibiting gas on the first film, and forming the silicon film on the first film and on the second film by supplying a silane-based gas having a silicon number 1 to the substrate having the growth inhibiting gas physically adsorbed on the first film.

公开(公告)号：US12098918B2

公开(公告)日：2024-09-24

申请号：US17925182

申请日：2021-08-10

申请人： CORNING INCORPORATED

发明人： Charles Andrew Paulson ,  Dean Michael Thelen

IPC分类号： G01B7/06 ,  C23C16/34 ,  C23C16/36 ,  C23C16/52

CPC分类号： G01B7/105 ,  C23C16/34 ,  C23C16/36 ,  C23C16/52

摘要： A method for in-situ measurement of a thickness of a coating deposited by a deposition process, includes the steps of initiating deposition within a deposition chamber such that a first coating forms on an outer surface of a probe disposed in the deposition chamber, wherein the probe comprises a coil assembly including at least one coil, wherein the probe is separated by a distance from a substrate disposed within the deposition chamber; exciting the coil assembly with a first alternating current to produce a first time-varying magnetic field, the first time-varying magnetic field generating an eddy current in the first coating; determining a metric related to an inductance or resistance of the coil assembly, wherein a value of the metric is related to a first thickness of the first coating and results at least partially from an eddy current magnetic field produced by an eddy current in the coating; and correlating the first thickness of the first coating to a second thickness of a second coating deposited on a surface of the substrate.

公开(公告)号：US12098071B2

公开(公告)日：2024-09-24

申请号：US17287207

申请日：2019-10-22

申请人： LG CHEM, LTD.

发明人： Sung Jin Shin ,  Jang Yeon Hwang ,  Hee Joon Jeong ,  Bo Ra Park ,  Hee Wang Yang

IPC分类号： C23C18/12 ,  C01B21/082 ,  C08J7/048 ,  C23C16/34 ,  C23C18/14 ,  H10K50/844

CPC分类号： C01B21/0823 ,  C08J7/048 ,  C23C16/34 ,  C23C18/1225 ,  C23C18/14 ,  H10K50/844 ,  C01P2002/85 ,  C01P2004/04

摘要： Provided is a barrier film, comprising:



a base layer; and
an inorganic layer including Si, N, and O,
wherein the inorganic layer has a thickness of 600 nm or less, and the film has a water vapor transmission rate of 0.5×10−3 g/m2·day as measured under conditions of a temperature of 38° C. and 100% relative humidity. The barrier film has excellent barrier properties and optical properties and can be used for electronic products sensitive to moisture.

公开(公告)号：US20240297080A1

公开(公告)日：2024-09-05

申请号：US18660318

申请日：2024-05-10

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hsin-Yi Lee ,  Ji-Cheng Chen ,  Cheng-Lung Hung ,  Weng Chang ,  Chi On Chui

IPC分类号： H01L21/8234 ,  C23C16/34 ,  C23C16/455 ,  H01L21/28 ,  H01L21/285 ,  H01L21/764 ,  H01L27/088 ,  H01L29/06 ,  H01L29/08 ,  H01L29/417 ,  H01L29/45 ,  H01L29/49 ,  H01L29/66

CPC分类号： H01L21/82345 ,  C23C16/34 ,  C23C16/45553 ,  H01L21/28088 ,  H01L21/28518 ,  H01L21/764 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823475 ,  H01L21/823481 ,  H01L27/0886 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/41791 ,  H01L29/45 ,  H01L29/4966 ,  H01L29/66545

摘要： A method includes forming isolation regions extending into a semiconductor substrate, and recessing the isolation regions. After the recessing, a portion of a semiconductor material between the isolation region protrudes higher than top surfaces of the isolation regions to form a semiconductor fin. The method further includes forming a gate stack, which includes forming a gate dielectric on sidewalls and a top surface of the semiconductor fin, and depositing a titanium nitride layer over the gate dielectric as a work-function layer. The titanium nitride layer is deposited at a temperature in a range between about 300° C. and about 400° C. A source region and a drain region are formed on opposing sides of the gate stack.

公开(公告)号：US12077865B2

公开(公告)日：2024-09-03

申请号：US17820929

申请日：2022-08-19

申请人： Tokyo Electron Limited

发明人： Hideki Yuasa ,  Hiroyuki Ikuta ,  Yutaka Fujino ,  Makoto Wada ,  Hirokazu Ueda

IPC分类号： C23C16/00 ,  C23C16/34 ,  C23C16/56 ,  H01J37/32

CPC分类号： C23C16/56 ,  C23C16/345 ,  H01J37/32192

摘要： A film forming method of forming a film on a substrate by using a film forming apparatus including a processing container, and a stage provided in an interior of the processing container to place the substrate thereon and in which aluminum is contained, includes: forming a film continuously on one substrate or on a plurality of substrates by supplying a gas for film formation to the interior of the processing container while heating the substrate placed on the stage; cleaning the interior of the processing container with a fluorine-containing gas in a state in which the substrate is unloaded from the processing container; and performing a post-process by generating plasma of an oxygen- and hydrogen-containing-gas in the interior of the processing container, wherein the forming the film, the cleaning the interior of the processing container, and the performing the post-process are repeatedly performed.

公开(公告)号：US20240287678A1

公开(公告)日：2024-08-29

申请号：US18642134

申请日：2024-04-22

申请人： Applied Materials, Inc.

发明人： Geetika Bajaj ,  Darshan Thakare ,  Prerna Goradia ,  Robert Jan Visser ,  Yixiong Yang ,  Jacqueline S. Wrench ,  Srinivas Gandikota

IPC分类号： C23C16/455 ,  C08G77/26 ,  C08G77/50 ,  C23C16/32 ,  C23C16/34 ,  C23C16/46 ,  H01L21/28

CPC分类号： C23C16/45553 ,  C08G77/26 ,  C08G77/50 ,  C23C16/32 ,  C23C16/34 ,  C23C16/45502 ,  C23C16/466 ,  H01L21/28088

摘要： Methods of depositing a metal film by exposing a substrate surface to a halide precursor and an organosilane reactant are described. The halide precursor comprises a compound of general formula (I): MQzRm, wherein M is a metal, Q is a halogen selected from Cl, Br, F or I, z is from 1 to 6, R is selected from alkyl, CO, and cyclopentadienyl, and m is from 0 to 6. The aluminum reactant comprises a compound of general formula (II) or general formula (III):




wherein R1, R2, R3, R4, R5, R6, R7, R8, Ra, Rb, Rc, Rd, Re, and Rf are independently selected from hydrogen (H), substituted alkyl or unsubstituted alkyl; and X, Y, X′, and Y′ are independently selected from nitrogen (N) and carbon (C).

公开(公告)号：US12074009B2

公开(公告)日：2024-08-27

申请号：US17540257

申请日：2021-12-02

申请人： Tokyo Electron Limited

发明人： Yuki Iijima ,  Toru Hisamatsu ,  Kae Kumagai

IPC分类号： H01J37/32 ,  C23C16/04 ,  C23C16/30 ,  C23C16/34 ,  C23C16/40 ,  H01L21/67 ,  H01L21/311

CPC分类号： H01J37/32394 ,  C23C16/042 ,  C23C16/045 ,  C23C16/047 ,  H01J37/321 ,  H01L21/67069 ,  C23C16/308 ,  C23C16/345 ,  C23C16/402 ,  H01J37/32082 ,  H01L21/31122 ,  H01L21/31138

摘要： An apparatus for processing a substrate includes a step of providing a substrate and a first step. In the step of providing a substrate, a substrate having a first film and a second film formed on the first film and having a pattern formed thereon is provided. In the first step, a protective film is formed on a side wall of the first film by a product generated by sputtering of the second film while a first processing gas is turned into plasma and the first film is etched simultaneously with the sputtering of the second film.