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公开(公告)号:CN101828255B
公开(公告)日:2011-11-09
申请号:CN200880112031.9
申请日:2008-12-03
申请人: 新日铁高新材料株式会社 , 日铁新材料股份有限公司
CPC分类号: C22C5/02 , B23K35/0222 , B23K35/302 , C22C5/04 , C22C5/06 , C22C9/00 , C22C9/01 , H01L24/43 , H01L24/45 , H01L2224/05624 , H01L2224/4312 , H01L2224/4321 , H01L2224/43825 , H01L2224/43848 , H01L2224/43986 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/45639 , H01L2224/45644 , H01L2224/45664 , H01L2224/45669 , H01L2224/45673 , H01L2224/45676 , H01L2224/45683 , H01L2224/48011 , H01L2224/48247 , H01L2224/48465 , H01L2224/48471 , H01L2224/48486 , H01L2224/4851 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48839 , H01L2224/48844 , H01L2224/85045 , H01L2224/85065 , H01L2224/85075 , H01L2224/85186 , H01L2224/85203 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2924/00011 , H01L2924/01005 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/0102 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01203 , H01L2924/01204 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/15311 , H01L2924/181 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/3025 , H01L2924/01004 , H01L2924/01001 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/00015 , H01L2924/01202 , H01L2224/45655 , H01L2224/45657 , H01L2224/45671 , H01L2224/45666 , H01L2924/20652 , H01L2924/20653 , H01L2924/20654 , H01L2924/20655 , H01L2924/20656 , H01L2924/20658 , H01L2224/48227 , H01L2924/00 , H01L2224/48824 , H01L2924/013 , H01L2924/00014 , H01L2924/0104 , H01L2924/00013 , H01L2924/01049 , H01L2924/01006
摘要: 本发明的目的是提供可以降低颈部的损伤,并且在环路的直线性、环路高度的稳定性、接合线的接合形状的稳定化方面优异的也适应于低环路化、细线化、窄间距化、三维组装等的半导体组装技术的高功能的接合线。本发明的半导体装置用接合线,是具有由导电性金属形成的芯材和在所述芯材上的以与芯材不同的面心立方晶的金属为主成分的表皮层的接合线,其特征在于,在所述表皮层的表面中的纵向的晶体取向之中, 所占的比例为50%以上。
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公开(公告)号:CN102422404B
公开(公告)日:2015-08-12
申请号:CN201080019191.6
申请日:2010-07-16
申请人: 新日铁住金高新材料株式会社 , 日铁住金新材料股份有限公司
CPC分类号: C22C5/04 , C22C5/02 , C22C5/06 , C22C9/00 , H01L24/43 , H01L24/45 , H01L2224/05624 , H01L2224/4312 , H01L2224/4321 , H01L2224/43848 , H01L2224/45015 , H01L2224/45124 , H01L2224/45147 , H01L2224/4516 , H01L2224/45565 , H01L2224/45572 , H01L2224/45639 , H01L2224/45644 , H01L2224/45664 , H01L2224/48011 , H01L2224/48247 , H01L2224/48471 , H01L2224/4851 , H01L2224/48624 , H01L2224/48724 , H01L2224/48739 , H01L2224/48744 , H01L2224/48764 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48864 , H01L2224/78301 , H01L2224/85045 , H01L2224/85065 , H01L2224/85075 , H01L2224/85181 , H01L2224/85186 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2224/85464 , H01L2224/85564 , H01L2924/00011 , H01L2924/00015 , H01L2924/014 , H01L2924/10253 , H01L2924/15311 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/01034 , H01L2924/01005 , H01L2924/01015 , H01L2924/01046 , H01L2924/01047 , H01L2924/0102 , H01L2924/01013 , H01L2924/00014 , H01L2224/45144 , H01L2924/01204 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/01001 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/01028 , H01L2924/0105 , H01L2924/01007 , H01L2224/45669 , H01L2924/2076 , H01L2924/01018 , H01L2224/48465 , H01L2924/20654 , H01L2924/20652 , H01L2924/20655 , H01L2924/00 , H01L2924/013 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/01004 , H01L2924/01033
摘要: 本发明提供即使对于镀钯的引线框也能够确保良好的楔接合性、耐氧化性优异的以铜或铜合金为芯线的半导体用接合线。该半导体用接合线的特征在于,具有由铜或铜合金构成的芯线、在该芯线的表面的具有10~200nm的厚度的含有钯的被覆层和在该被覆层的表面的具有1~80nm的厚度的含有贵金属和钯的合金层,所述贵金属为银或金,所述合金层中的所述贵金属的浓度为10体积%~75体积%。
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公开(公告)号:CN101925992B
公开(公告)日:2012-08-22
申请号:CN201080001021.5
申请日:2010-02-12
申请人: 新日铁高新材料株式会社 , 日铁新材料股份有限公司
CPC分类号: C22C5/02 , B32B15/018 , C22C5/04 , C22C5/06 , C22C9/00 , C22C21/02 , C22C21/12 , H01L24/43 , H01L24/45 , H01L2224/05624 , H01L2224/43 , H01L2224/43848 , H01L2224/43986 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45164 , H01L2224/45169 , H01L2224/45565 , H01L2224/45572 , H01L2224/45644 , H01L2224/45664 , H01L2224/45686 , H01L2224/4569 , H01L2224/48011 , H01L2224/48247 , H01L2224/48471 , H01L2224/48479 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48664 , H01L2224/48839 , H01L2224/48844 , H01L2224/48864 , H01L2224/85045 , H01L2224/85065 , H01L2224/85075 , H01L2224/85186 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2224/85464 , H01L2924/00011 , H01L2924/00015 , H01L2924/01005 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/10253 , H01L2924/14 , H01L2924/181 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/3025 , Y10T428/12222 , H01L2924/01001 , H01L2924/00014 , H01L2924/20754 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/01202 , H01L2924/01007 , H01L2924/01205 , H01L2224/45639 , H01L2224/45669 , H01L2224/45655 , H01L2224/45657 , H01L2224/45671 , H01L2224/45666 , H01L2924/20656 , H01L2924/20652 , H01L2924/20645 , H01L2924/20654 , H01L2924/20655 , H01L2924/00 , H01L2224/48227 , H01L2224/48824 , H01L2924/013 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/00013 , H01L2924/01049 , H01L2924/01006
摘要: 本发明的目的是提供可以兼备球接合性、线加工性,并能提高环路稳定性、扯拉强度、楔接合性的多层线。本发明的半导体用接合线,其特征在于,具有以Cu、Au、Ag中的1种以上的元素为主成分的芯材和在所述芯材上的以Pd为主成分的外层,在线整体中含有的总计的氢浓度为0.0001~0.008质量%的范围。
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公开(公告)号:CN1723557A
公开(公告)日:2006-01-18
申请号:CN200380105527.0
申请日:2003-12-04
申请人: 皇家飞利浦电子股份有限公司
发明人: C·怀兰德
IPC分类号: H01L23/64 , H01L23/498
CPC分类号: H01L24/85 , H01L23/49811 , H01L23/49816 , H01L23/50 , H01L23/585 , H01L23/645 , H01L23/66 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/84 , H01L24/91 , H01L2223/6611 , H01L2224/05554 , H01L2224/05644 , H01L2224/37147 , H01L2224/40225 , H01L2224/45015 , H01L2224/48011 , H01L2224/48091 , H01L2224/48227 , H01L2224/48233 , H01L2224/484 , H01L2224/49 , H01L2224/73221 , H01L2224/73229 , H01L2224/85 , H01L2224/92 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/20752 , H01L2924/30107 , H01L2924/3011 , H01L2224/83 , H01L2224/84 , H01L2924/20655 , H01L2224/78 , H01L2924/00 , H01L2224/45099
摘要: 本发明的一个方面涉及降低连接器件的电源或地线与BGA封装的路径的阻抗。在特定的示例性实施例中,通过在距信号键合线(115)预定距离处设置地线条(130)来控制信号键合线的阻抗。在相关的示例性实施例中,紧邻引线键合(115)在器件管芯(140)和封装之间制作低阻抗的电源或地线连接。集成电路(140)包括多个接地焊盘、信号焊盘、电源焊盘和用于安装该集成电路的封装。封装(100)包括多个焊盘平台(110)、围绕集成电路(140)的接地环(105),和将接地环(105)连接到集成电路接地焊盘(120)的接地条(130)。
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公开(公告)号:CN105023902A
公开(公告)日:2015-11-04
申请号:CN201510431505.8
申请日:2010-07-16
申请人: 新日铁住金高新材料株式会社 , 日铁住金新材料股份有限公司
CPC分类号: C22C5/04 , C22C5/02 , C22C5/06 , C22C9/00 , H01L24/43 , H01L24/45 , H01L2224/05624 , H01L2224/4312 , H01L2224/4321 , H01L2224/43848 , H01L2224/45015 , H01L2224/45124 , H01L2224/45147 , H01L2224/4516 , H01L2224/45565 , H01L2224/45572 , H01L2224/45639 , H01L2224/45644 , H01L2224/45664 , H01L2224/48011 , H01L2224/48247 , H01L2224/48471 , H01L2224/4851 , H01L2224/48624 , H01L2224/48724 , H01L2224/48739 , H01L2224/48744 , H01L2224/48764 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48864 , H01L2224/78301 , H01L2224/85045 , H01L2224/85065 , H01L2224/85075 , H01L2224/85181 , H01L2224/85186 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2224/85464 , H01L2224/85564 , H01L2924/00011 , H01L2924/00015 , H01L2924/014 , H01L2924/10253 , H01L2924/15311 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/01034 , H01L2924/01005 , H01L2924/01015 , H01L2924/01046 , H01L2924/01047 , H01L2924/0102 , H01L2924/01013 , H01L2924/00014 , H01L2224/45144 , H01L2924/01204 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/01001 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/01028 , H01L2924/0105 , H01L2924/01007 , H01L2224/45669 , H01L2924/2076 , H01L2924/01018 , H01L2224/48465 , H01L2924/20654 , H01L2924/20652 , H01L2924/20655 , H01L2924/00 , H01L2924/013 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/01004 , H01L2924/01033
摘要: 本发明提供即使对于镀钯的引线框也能够确保良好的楔接合性、耐氧化性优异的以铜或铜合金为芯线的半导体用接合线。根据一个实施方式的半导体用接合线,其特征在于,具有:由铜或铜合金构成的芯线;形成于该芯线的表面的具有10~200nm的厚度的含有钯的被覆层;和形成于该被覆层的表面的具有1~80nm的厚度的含有金和钯的合金层,所述合金层中的金的浓度为10体积%~75体积%,在测定接合线表面的结晶取向所得到的测定结果中,相对于拉丝方向的倾斜为15度以下的结晶取向 的晶粒的面积比为40%~100%。
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公开(公告)号:CN102422404A
公开(公告)日:2012-04-18
申请号:CN201080019191.6
申请日:2010-07-16
申请人: 新日铁高新材料株式会社 , 日铁新材料股份有限公司
CPC分类号: C22C5/04 , C22C5/02 , C22C5/06 , C22C9/00 , H01L24/43 , H01L24/45 , H01L2224/05624 , H01L2224/4312 , H01L2224/4321 , H01L2224/43848 , H01L2224/45015 , H01L2224/45124 , H01L2224/45147 , H01L2224/4516 , H01L2224/45565 , H01L2224/45572 , H01L2224/45639 , H01L2224/45644 , H01L2224/45664 , H01L2224/48011 , H01L2224/48247 , H01L2224/48471 , H01L2224/4851 , H01L2224/48624 , H01L2224/48724 , H01L2224/48739 , H01L2224/48744 , H01L2224/48764 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48864 , H01L2224/78301 , H01L2224/85045 , H01L2224/85065 , H01L2224/85075 , H01L2224/85181 , H01L2224/85186 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2224/85464 , H01L2224/85564 , H01L2924/00011 , H01L2924/00015 , H01L2924/014 , H01L2924/10253 , H01L2924/15311 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/01034 , H01L2924/01005 , H01L2924/01015 , H01L2924/01046 , H01L2924/01047 , H01L2924/0102 , H01L2924/01013 , H01L2924/00014 , H01L2224/45144 , H01L2924/01204 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/01001 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/01028 , H01L2924/0105 , H01L2924/01007 , H01L2224/45669 , H01L2924/2076 , H01L2924/01018 , H01L2224/48465 , H01L2924/20654 , H01L2924/20652 , H01L2924/20655 , H01L2924/00 , H01L2924/013 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/01004 , H01L2924/01033
摘要: 本发明提供即使对于镀钯的引线框也能够确保良好的楔接合性、耐氧化性优异的以铜或铜合金为芯线的半导体用接合线。该半导体用接合线的特征在于,具有由铜或铜合金构成的芯线、在该芯线的表面的具有10~200nm的厚度的含有钯的被覆层和在该被覆层的表面的具有1~80nm的厚度的含有贵金属和钯的合金层,所述贵金属为银或金,所述合金层中的所述贵金属的浓度为10体积%~75体积%。
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公开(公告)号:CN101828255A
公开(公告)日:2010-09-08
申请号:CN200880112031.9
申请日:2008-12-03
申请人: 新日铁高新材料株式会社 , 日铁新材料股份有限公司
CPC分类号: C22C5/02 , B23K35/0222 , B23K35/302 , C22C5/04 , C22C5/06 , C22C9/00 , C22C9/01 , H01L24/43 , H01L24/45 , H01L2224/05624 , H01L2224/4312 , H01L2224/4321 , H01L2224/43825 , H01L2224/43848 , H01L2224/43986 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/45639 , H01L2224/45644 , H01L2224/45664 , H01L2224/45669 , H01L2224/45673 , H01L2224/45676 , H01L2224/45683 , H01L2224/48011 , H01L2224/48247 , H01L2224/48465 , H01L2224/48471 , H01L2224/48486 , H01L2224/4851 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48839 , H01L2224/48844 , H01L2224/85045 , H01L2224/85065 , H01L2224/85075 , H01L2224/85186 , H01L2224/85203 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2924/00011 , H01L2924/01005 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/0102 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01203 , H01L2924/01204 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/15311 , H01L2924/181 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/3025 , H01L2924/01004 , H01L2924/01001 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/00015 , H01L2924/01202 , H01L2224/45655 , H01L2224/45657 , H01L2224/45671 , H01L2224/45666 , H01L2924/20652 , H01L2924/20653 , H01L2924/20654 , H01L2924/20655 , H01L2924/20656 , H01L2924/20658 , H01L2224/48227 , H01L2924/00 , H01L2224/48824 , H01L2924/013 , H01L2924/00014 , H01L2924/0104 , H01L2924/00013 , H01L2924/01049 , H01L2924/01006
摘要: 本发明的目的是提供可以降低颈部的损伤,并且在环路的直线性、环路高度的稳定性、接合线的接合形状的稳定化方面优异的也适应于低环路化、细线化、窄间距化、三维组装等的半导体组装技术的高功能的接合线。本发明的半导体装置用接合线,是具有由导电性金属形成的芯材和在所述芯材上的以与芯材不同的面心立方晶的金属为主成分的表皮层的接合线,其特征在于,在所述表皮层的表面中的纵向的晶体取向之中, 所占的比例为50%以上。
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公开(公告)号:CN105023902B
公开(公告)日:2018-01-30
申请号:CN201510431505.8
申请日:2010-07-16
申请人: 新日铁住金高新材料株式会社 , 日铁住金新材料股份有限公司
CPC分类号: C22C5/04 , C22C5/02 , C22C5/06 , C22C9/00 , H01L24/43 , H01L24/45 , H01L2224/05624 , H01L2224/4312 , H01L2224/4321 , H01L2224/43848 , H01L2224/45015 , H01L2224/45124 , H01L2224/45147 , H01L2224/4516 , H01L2224/45565 , H01L2224/45572 , H01L2224/45639 , H01L2224/45644 , H01L2224/45664 , H01L2224/48011 , H01L2224/48247 , H01L2224/48471 , H01L2224/4851 , H01L2224/48624 , H01L2224/48724 , H01L2224/48739 , H01L2224/48744 , H01L2224/48764 , H01L2224/48824 , H01L2224/48839 , H01L2224/48844 , H01L2224/48864 , H01L2224/78301 , H01L2224/85045 , H01L2224/85065 , H01L2224/85075 , H01L2224/85181 , H01L2224/85186 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2224/85464 , H01L2224/85564 , H01L2924/00011 , H01L2924/00015 , H01L2924/014 , H01L2924/10253 , H01L2924/15311 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/01034 , H01L2924/01005 , H01L2924/01015 , H01L2924/01046 , H01L2924/01047 , H01L2924/0102 , H01L2924/01013 , H01L2924/00014 , H01L2224/45144 , H01L2924/01204 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/01001 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/01028 , H01L2924/0105 , H01L2924/01007 , H01L2224/45669 , H01L2924/2076 , H01L2924/01018 , H01L2224/48465 , H01L2924/20654 , H01L2924/20652 , H01L2924/20655 , H01L2924/00 , H01L2924/013 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/01004 , H01L2924/01033
摘要: 本发明提供即使对于镀钯的引线框也能够确保良好的楔接合性、耐氧化性优异的以铜或铜合金为芯线的半导体用接合线。根据一个实施方式的半导体用接合线,其特征在于,具有:由铜或铜合金构成的芯线;形成于该芯线的表面的具有10~200nm的厚度的含有钯的被覆层;和形成于该被覆层的表面的具有1~80nm的厚度的含有金和钯的合金层,所述合金层中的金的浓度为10体积%~75体积%,在测定接合线表面的结晶取向所得到的测定结果中,相对于拉丝方向的倾斜为15度以下的结晶取向 的晶粒的面积比为40%~100%。
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公开(公告)号:CN101802994B
公开(公告)日:2012-02-08
申请号:CN200980100379.0
申请日:2009-01-20
申请人: 新日铁高新材料株式会社 , 日铁新材料股份有限公司
CPC分类号: C22C5/02 , B21C37/047 , B23K35/0261 , B23K35/0272 , B23K35/24 , B23K35/30 , B23K35/3006 , B23K35/3013 , B23K35/302 , C22C9/00 , C22F1/08 , C22F1/14 , H01L24/43 , H01L24/45 , H01L24/48 , H01L24/85 , H01L2224/05624 , H01L2224/4312 , H01L2224/4321 , H01L2224/43825 , H01L2224/43848 , H01L2224/43986 , H01L2224/45014 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45164 , H01L2224/45169 , H01L2224/45173 , H01L2224/45176 , H01L2224/45565 , H01L2224/45572 , H01L2224/456 , H01L2224/45639 , H01L2224/45644 , H01L2224/45664 , H01L2224/45669 , H01L2224/45673 , H01L2224/45676 , H01L2224/48011 , H01L2224/48227 , H01L2224/48247 , H01L2224/48471 , H01L2224/48479 , H01L2224/4848 , H01L2224/4849 , H01L2224/4851 , H01L2224/48511 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48839 , H01L2224/48844 , H01L2224/85045 , H01L2224/85065 , H01L2224/85075 , H01L2224/85186 , H01L2224/85203 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2225/06562 , H01L2924/00014 , H01L2924/00015 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/0102 , H01L2924/01022 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01327 , H01L2924/10253 , H01L2924/12041 , H01L2924/14 , H01L2924/15311 , H01L2924/15747 , H01L2924/20752 , H01L2924/3025 , H01L2924/01004 , H01L2924/01203 , H01L2224/45655 , H01L2224/45657 , H01L2224/45671 , H01L2224/45666 , H01L2924/01204 , H01L2924/01202 , H01L2224/48465 , H01L2924/20751 , H01L2924/01001 , H01L2924/20655 , H01L2924/20652 , H01L2924/20653 , H01L2924/20654 , H01L2924/20656 , H01L2924/00 , H01L2224/48824 , H01L2924/013 , H01L2924/20753 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/20759 , H01L2924/2076 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/2075 , H01L2924/20754 , H01L2924/206
摘要: 本发明的目的是提供一种高功能的接合线,其能够抑制球紧上部的线倾倒(倾斜)和弹回不良,环直线性、环高度的稳定性等也优异,能够适应于叠层芯片连接、细线化、窄间距组装等半导体组装技术。本发明的半导体装置用接合线,是具有由导电性金属形成的芯材和在该芯材上的以与芯材不同的金属为主成分的表皮层的接合线,其特征在于,该表皮层的表面的晶粒的沿圆周方向的平均尺寸a和线轴的垂直截面上的该芯材的晶粒的平均尺寸b的关系为a/b≤0.7。
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公开(公告)号:CN101925992A
公开(公告)日:2010-12-22
申请号:CN201080001021.5
申请日:2010-02-12
申请人: 新日铁高新材料株式会社 , 日铁新材料股份有限公司
CPC分类号: C22C5/02 , B32B15/018 , C22C5/04 , C22C5/06 , C22C9/00 , C22C21/02 , C22C21/12 , H01L24/43 , H01L24/45 , H01L2224/05624 , H01L2224/43 , H01L2224/43848 , H01L2224/43986 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45164 , H01L2224/45169 , H01L2224/45565 , H01L2224/45572 , H01L2224/45644 , H01L2224/45664 , H01L2224/45686 , H01L2224/4569 , H01L2224/48011 , H01L2224/48247 , H01L2224/48471 , H01L2224/48479 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48664 , H01L2224/48839 , H01L2224/48844 , H01L2224/48864 , H01L2224/85045 , H01L2224/85065 , H01L2224/85075 , H01L2224/85186 , H01L2224/85207 , H01L2224/85439 , H01L2224/85444 , H01L2224/85464 , H01L2924/00011 , H01L2924/00015 , H01L2924/01005 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/10253 , H01L2924/14 , H01L2924/181 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/3025 , Y10T428/12222 , H01L2924/01001 , H01L2924/00014 , H01L2924/20754 , H01L2924/20105 , H01L2924/20106 , H01L2924/20107 , H01L2924/01202 , H01L2924/01007 , H01L2924/01205 , H01L2224/45639 , H01L2224/45669 , H01L2224/45655 , H01L2224/45657 , H01L2224/45671 , H01L2224/45666 , H01L2924/20656 , H01L2924/20652 , H01L2924/20645 , H01L2924/20654 , H01L2924/20655 , H01L2924/00 , H01L2224/48227 , H01L2224/48824 , H01L2924/013 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/00013 , H01L2924/01049 , H01L2924/01006
摘要: 本发明的目的是提供可以兼备球接合性、线加工性,并能提高环路稳定性、扯拉强度、楔接合性的多层线。本发明的半导体用接合线,其特征在于,具有以Cu、Au、Ag中的1种以上的元素为主成分的芯材和在所述芯材上的以Pd为主成分的外层,在线整体中含有的总计的氢浓度为0.0001~0.008质量%的范围。
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