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489 条记录 (耗时 0.064 秒)

    SEMICONDUCTOR DEVICE WITH CAVITY CARRIER AND METHOD THEREFOR
    91.
    发明公开
    SEMICONDUCTOR DEVICE WITH CAVITY CARRIER AND METHOD THEREFOR 审中-公开

    公开(公告)号：EP4369383A1

    公开(公告)日：2024-05-15

    申请号：EP23201782.2

    申请日：2023-10-05

    申请人： NXP B.V.

    发明人： Mao, Kuan-Hsiang ,  Gong, Zhiwei ,  Tracht, Neil Thomas

    IPC分类号： H01L21/56 ,  H01L23/13 ,  H01L23/538

    CPC分类号： H01L23/13 ,  H01L23/5389 ,  H01L21/561

    摘要： A method of forming a semiconductor device is provided. The method includes forming a first cavity at a first major surface of a first encapsulant. A first semiconductor die is affixed on the first major surface of the first encapsulant and a second semiconductor die is affixed on a bottom surface of the first cavity. A second encapsulant encapsulates the first semiconductor die, the second semiconductor die, and at least exposed portions of the first major surface of the first encapsulant. A package substrate is formed on a first major surface of the second encapsulant. The package substrate includes conductive traces interconnected to the first semiconductor die and the second semiconductor die.

    PANEL LEVEL SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME
    93.
    发明公开
    PANEL LEVEL SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME 审中-实审

    公开(公告)号：EP4362071A2

    公开(公告)日：2024-05-01

    申请号：EP23206096.2

    申请日：2023-10-26

    申请人： STMicroelectronics Pte Ltd.

    发明人： GANI, David

    IPC分类号： H01L21/60 ,  H01L23/538 ,  H01L21/56 ,  H01L23/31

    CPC分类号： H01L24/19 ,  H01L24/96 ,  H01L23/5389 ,  H01L23/3128 ,  H01L21/561 ,  H01L21/568

    摘要： The present disclosure is directed to at least one semiconductor package including a die (204) within an encapsulant (202) having a first sidewall, an adhesive layer (222) on the encapsulant and having a second sidewall coplanar with the first sidewall of the encapsulant, and an insulating layer (226) on the adhesive layer having a third sidewall coplanar with the first sidewall and the second sidewall. A method of manufacturing the at least one semiconductor package includes forming an insulating layer on a temporary adhesion layer of a carrier, forming an adhesive layer on the insulating layer, and forming a plurality of openings through the adhesive layer and the insulating layer. The plurality of openings through the adhesive layer and the insulating layer may be formed by exposing the adhesive layer and the insulating layer to a laser.

    SENSOR PACKAGING STRUCTURE AND METHOD OF PREPARING THE SAME
    94.
    发明公开
    SENSOR PACKAGING STRUCTURE AND METHOD OF PREPARING THE SAME 审中-公开

    公开(公告)号：EP3385984A1

    公开(公告)日：2018-10-10

    申请号：EP16869987.4

    申请日：2016-11-30

    申请人： Microarray Microelectronics Corp., Ltd.

    发明人： LI, Yangyuan ,  DING, Shaobo

    IPC分类号： H01L23/498 ,  H01L21/50

    CPC分类号： H01L23/053 ,  H01L21/50 ,  H01L21/561 ,  H01L23/3121 ,  H01L23/498

    摘要： Disclosed in the present invention are a sensor packaging structure and a manufacturing method thereof. The sensor packaging structure includes a protection board, a circuit structure and a filling structure. A front surface of the circuit structure is connected to a first surface of the protection board. A second surface of the protection board is used as a sensing function surface. The filling structure is located on the outer periphery of the circuit structure and connected to the first surface of the protection board. The circuit structure includes a chip and a substrate. The chip and the substrate are connected back to back. A front surface of the chip is located at the front surface of the circuit structure and is provided with a functional circuit. A front surface of the substrate is located at a back surface of the circuit structure and is provided with a pad. The pad is electrically connected to the functional circuit on the front surface of the chip. The sensor packaging structure of the present invention uses the protection board as a protection layer of the functional circuit, which can effectively protect the functional circuit of the sensor. Meanwhile, the protection board is first connected to the circuit structure in the manufacturing method to avoid tolerance accumulation, increasing the manufacturing accuracy of the protection layer.

    PROCESS OF FABRICATION OF A SEMICONDUCTOR DEVICE WITH SIX-SIDED PROTECTED WALLS
    97.
    发明公开
    PROCESS OF FABRICATION OF A SEMICONDUCTOR DEVICE WITH SIX-SIDED PROTECTED WALLS 审中-公开

    公开(公告)号：EP3367430A1

    公开(公告)日：2018-08-29

    申请号：EP18154192.1

    申请日：2018-01-30

    申请人： NXP B.V.

    发明人： BUENNING, Hartmut

    IPC分类号： H01L21/78 ,  H01L21/56

    CPC分类号： H01L21/78 ,  H01L21/561 ,  H01L21/6836 ,  H01L23/293 ,  H01L23/3114 ,  H01L24/94 ,  H01L2221/68327 ,  H01L2221/6834

    摘要： A method of manufacturing a device with six-sided protected walls is disclosed. The method includes fabricating the plurality of devices on a wafer, forming a plurality of contact pads on each of the plurality of devices, cutting a first trench around each of the plurality of devices from a backside of the wafer with an active side having a plurality of contact pads facing down, applying a protective coating on the backside of the wafer thus filling the first trench with a protective material of the protective coating on the backside and cutting a second trench from the active side. The second trench extends to end of the first trench; The method further includes applying a protective layer on the active side including filling the second trench with the material of the protective coating on the active side thus making a wall through a combination of the first trench and the second trench, the wall fully filled with the material of the protective layer on the backside and the protective layer on the active side and singulating each of the plurality of devices by cutting through the wall substantially in middle across a thickness of the wafer.