公开(公告)号：EP1532731B1

公开(公告)日：2011-09-21

申请号：EP03787936.8

申请日：2003-07-18

申请人： NXP B.V.

发明人： BLEDNOV, Igor, I.

IPC分类号： H03F1/02

CPC分类号： H03F3/195 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/48227 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/0101 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01055 ,  H01L2924/01058 ,  H01L2924/01059 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/01094 ,  H01L2924/19041 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H03F1/0288 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

摘要： A high power Doherty amplifier circuit having at least one input terminal and at least one output terminal comprising at least one carrier transistor (30) forming a main amplifier stage; at least one peak transistor (32) forming a peak amplifier stage; a first input line (27) connecting the input terminal (28) to an input (29) of the carrier transistor (30); a second input line (31) connecting the input terminal (28) to an input (63) of the peak transistor (32); a first output line (33) connecting the output terminal (56) to an output (49) of the carrier transistor (30); and a second output line (35) connecting the output terminal (56) to an output (75) of the peak transistor (32). A high power Doherty amplifier circuit package comprising a support structure (104) supporting circuit elements of the Doherty amplifier circuit; at least one input terminal (102) and at least one output terminal (96) both terminals being supported on the support structure (104); at least one carrier transistor (92) forming a main amplifier stage and at least one peak transistor (98) forming a peak amplifier stage both transistors being supported on the support structure (104); a first input network (106) connecting the input terminal (102) to an input of the carrier transistor (92); a second input network (100, 114, 116) connecting the input terminal (102) to an input of the peak transistor (98); a first output network (94, 108, 110) connecting the output terminal (96) to an output of the carrier transistor (92); and a second output network (112) connecting the output terminal (96) to an output of the peak transistor (98), and wherein the input and output networks are artificial transmission lines comprising serial circuits and / or parallel circuits of at least one capacitance and / or at least one inductance.

摘要翻译： 一种具有至少一个输入端和至少一个输出端的高功率多赫蒂放大器电路，所述至少一个输出端包括至少一个形成主放大器级的载波晶体管（30） 至少一个峰值晶体管（32），形成峰值放大器级; 将输入端（28）连接到载流晶体管（30）的输入端（29）的第一输入线（27）; 将输入端（28）连接到峰值晶体管（32）的输入（63）的第二输入线（31）; 第一输出线（33），将输出端（56）连接到载流晶体管（30）的输出端（49）; 以及将输出端（56）连接到峰值晶体管（32）的输出端（75）的第二输出线（35）。 一种高功率多赫蒂放大器电路组件，包括支持多赫蒂放大器电路的电路元件的支撑结构（104） 至少一个输入端子（102）和至少一个输出端子（96）两个端子被支撑在支撑结构（104）上; 形成主放大器级的至少一个载流晶体管（92）和形成峰值放大器级的至少一个峰值晶体管（98），两个晶体管都支撑在支撑结构（104）上; 第一输入网络（106），将输入端子（102）连接到载流晶体管（92）的输入端; 将输入端（102）连接到峰值晶体管（98）的输入端的第二输入网络（100,114,116）; 第一输出网络（94,108,110），将输出端子（96）连接到载流晶体管（92）的输出端; 以及将所述输出端子（96）连接到所述峰值晶体管（98）的输出的第二输出网络（112），并且其中所述输入和输出网络是包括串联电路和/或具有至少一个电容 和/或至少一个电感。

公开(公告)号：EP2347441A1

公开(公告)日：2011-07-27

申请号：EP09740237.4

申请日：2009-10-15

申请人： QUALCOMM Incorporated

发明人： TOMS, Thomas R. ,  JALILIZEINALI, Reza ,  GU, Shiqun

IPC分类号： H01L25/065 ,  H01L23/60

CPC分类号： H01L23/60 ,  H01L25/0657 ,  H01L2224/274 ,  H01L2924/01055 ,  H01L2924/12044

摘要： An unassembled stacked IC device (60) includes an unassembled tier. (41) The unassembled stacked IC device also includes a first unpatterned layer (610) on the unassembled tier. The first unpatterned layer protects the unassembled tier from ESD events.

公开(公告)号：EP2208223A2

公开(公告)日：2010-07-21

申请号：EP08781591.6

申请日：2008-07-10

申请人： Occam Portfolio LLC

发明人： FJELSTAD, Joseph C.

IPC分类号： H01L21/60 ,  H05K3/32

CPC分类号： H05K1/188 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/48 ,  H01L24/73 ,  H01L24/82 ,  H01L2224/04105 ,  H01L2224/24195 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01055 ,  H01L2924/01078 ,  H01L2924/07811 ,  H01L2924/12041 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/19105 ,  H05K1/185 ,  H05K3/06 ,  H05K3/061 ,  H05K3/284 ,  H05K3/323 ,  H05K2201/0355 ,  H05K2203/1469 ,  Y10T29/4913 ,  Y10T29/49146 ,  Y10T29/49169 ,  Y10T428/24612 ,  H01L2924/00015 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A method for producing an assembly of electronic components and assemblies in accord with this, wherein the electronic components have component terminals. A conductive firmament having a first side and a second side is provided. Then the component terminals are connected to the first side of the firmament with an anisotropic conductor. A pattern is applied to the second side of said firmament. And portions of the firmament are removed based on the pattern, such that remaining portions of said firmament form the electrical circuit interconnecting the component terminals.

公开(公告)号：EP2073316A4

公开(公告)日：2010-07-21

申请号：EP07807629

申请日：2007-09-20

申请人： HITACHI CHEMICAL CO LTD

发明人： TAKANE NOBUAKI

IPC分类号： H01R11/01 ,  C09J9/02 ,  C09J11/04 ,  C09J201/00 ,  H01B1/20 ,  H01B5/00 ,  H01B13/00 ,  H01L21/60 ,  H05K1/14 ,  H05K3/32 ,  H05K3/36

CPC分类号： H05K3/323 ,  C08K9/02 ,  C09J9/02 ,  C09J11/00 ,  H01B1/22 ,  H01L24/16 ,  H01L24/29 ,  H01L24/83 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/13144 ,  H01L2224/16 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/2939 ,  H01L2224/294 ,  H01L2224/2989 ,  H01L2224/83101 ,  H01L2224/838 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01037 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01055 ,  H01L2924/01056 ,  H01L2924/01058 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01088 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/0781 ,  H01L2924/07811 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15788 ,  H01R4/04 ,  H05K1/14 ,  H05K2201/0209 ,  H05K2201/0224 ,  H05K2201/0329 ,  Y10T428/256 ,  H01L2924/00 ,  H01L2224/05599

摘要： The anisotropically conductive adhesive composition according to the present invention is an anisotropically conductive adhesive composition to connect a first circuit member where a first circuit electrode is formed on the principal surface of a first substrate and a second circuit member where a second circuit electrode is formed on the principal surface of a second substrate with the first circuit electrode and the second circuit electrode placed opposite, wherein the anisotropically conductive adhesive composition comprises an adhesive and a coated particle where at least part of the surface of a conductive particle is coated with an insulating material containing a polymer electrolyte and an inorganic oxide fine particle.

公开(公告)号：EP1766679A4

公开(公告)日：2010-02-24

申请号：EP04769650

申请日：2004-10-15

申请人： NOKIA CORP ,  EPCOS AG

发明人： TIKKA PASI ,  SCHMIDHAMMER EDGAR ,  HEINZE HABBO ,  WELZER REINER ,  ZIDEK HERBERT ,  SCHAUFELE ANSGAR ,  ELLAE JUHA

IPC分类号： H01L23/28 ,  H01L21/60 ,  H01L23/31 ,  H01L23/36 ,  H03H3/02 ,  H03H3/08 ,  H03H9/10

CPC分类号： H03H9/1078 ,  H01L23/3135 ,  H01L24/81 ,  H01L24/97 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/73204 ,  H01L2224/81801 ,  H01L2224/97 ,  H01L2924/01029 ,  H01L2924/01055 ,  H01L2924/01057 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/3011 ,  H03H9/02102 ,  H03H9/1085 ,  H03H2003/025 ,  H01L2224/81 ,  H01L2924/00

摘要： A method for improving heat dissipation in an encapsulated electronic package usually referred to as a chip-size SAW package. The package comprises one or more acoustic-wave components fabricated on a die, which is disposed on an electrically non-conductive carrier separated by electrically conducting bumps. The top of the package is covered by a laminate and a hermetic seal layer. Heat dissipation can be improved by removing a part of the laminate and then depositing a layer of thermal conducting material on the package, and by providing one or more heat conducting paths through the carrier.

公开(公告)号：EP2115789A2

公开(公告)日：2009-11-11

申请号：EP08719476.7

申请日：2008-02-26

申请人： Koninklijke Philips Electronics N.V. ,  Philips Lumileds Lighting Company LLC

发明人： MUELLER, Gerd ,  MUELLER-MACH, Regina ,  BASIN, Grigoriy ,  WEST, Robert Scott ,  MARTIN, Paul S. ,  LIM, Tze-Sen ,  EBERLE, Stefan

IPC分类号： H01L33/00

CPC分类号： H01L33/505 ,  B29C41/14 ,  B29C41/20 ,  B29C41/22 ,  B29K2995/0031 ,  B29L2011/00 ,  H01L24/97 ,  H01L25/167 ,  H01L33/504 ,  H01L33/54 ,  H01L33/56 ,  H01L2224/16225 ,  H01L2224/45139 ,  H01L2224/48091 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01055 ,  H01L2924/01058 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/351 ,  H01L2933/0041 ,  H01L2924/00014 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/01049 ,  H01L2924/00012

摘要： Overmolded lenses and certain fabrication techniques are described for LED structures. In one embodiment, thin YAG phosphor plates are formed and affixed over blue LEDs mounted on a submount wafer. A clear lens is then molded over each LED structure during a single molding process. The LEDs are then separated from the wafer. The molded lens may include red phosphor to generate a warmer white light. In another embodiment, the phosphor plates are first temporarily mounted on a backplate, and a lens containing a red phosphor is molded over the phosphor plates. The plates with overmolded lenses are removed from the backplate and affixed to the top of an energizing LED. A clear lens is then molded over each LED structure. The shape of the molded phosphor-loaded lenses may be designed to improve the color vs. angle uniformity. Multiple dies may be encapsulated by a single lens. In another embodiment, a prefabricated collimating lens is glued to the flat top of an overmolded lens.

摘要翻译： LED结构描述了包覆成型的透镜和某些制造技术。 在一个实施例中，薄的YAG磷光体板被形成并固定在安装在底座晶片上的蓝色LED上。 然后在单个模制过程中在每个LED结构上模制透明透镜。 然后将LED从晶片分离。 模制的透镜可以包括红色磷光体以产生较暖的白光。 在另一个实施例中，荧光板首先临时安装在背板上，并且在荧光体板上模制含有红色荧光体的透镜。 具有包覆成型透镜的板从背板上移除并固定在通电LED的顶部。 然后在每个LED结构上模制透明透镜。 模制的含磷光体的透镜的形状可以设计成改善颜色与角度均匀性。 多个管芯可以由单个透镜封装。 在另一个实施例中，将预制准直透镜胶合到包覆成型透镜的平坦顶部。

公开(公告)号：EP1995294A1

公开(公告)日：2008-11-26

申请号：EP07714017.6

申请日：2007-02-09

申请人： Mitsubishi Chemical Corporation

发明人： YOSHINO, Masahiko ,  MIURA, Chisato ,  KIJIMA, Naoto ,  KOMURO, Naoyuki

IPC分类号： C09K11/59 ,  C09K11/08 ,  H01L33/00 ,  H01J61/44

CPC分类号： C09K11/7734 ,  H01L24/45 ,  H01L33/502 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/01019 ,  H01L2924/01021 ,  H01L2924/01037 ,  H01L2924/01055 ,  H01L2924/01066 ,  H01L2924/01067 ,  H01L2924/01068 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/20753 ,  H01L2924/20752 ,  H01L2924/00 ,  H01L2924/00012

摘要： To provide a phosphor emitting green fluorescence and having such superior characteristics as excellent conversion efficiency of blue light or near-ultraviolet light and excellent color purity,
a phosphor satisfying the following conditions (i) to (v) :
(i) the wavelength of emission peak thereof is 510 nm or longer and 542 nm or shorter, when excited with light of 400 nm or 455 nm
(ii) the full width at half maximum of emission peak thereof is 75 nm or narrower, when excited with light of 400 nm or 455 nm,
(iii) the external quantum efficiency, which is defined by the formula below, is 0.42 or larger, when excited with light of 400 nm or 455 nm, external quantum efficiency = internal quantum efficiency × absorption efficiency
(iv) a part of its surface comprises substance containing oxygen, and
(v) it contains a bivalent and trivalent metal element (M II element), and its molar ratio to the total bivalent elements is larger than 1 % and smaller than 15 %.

摘要翻译： 提供一种荧光体，发出绿色荧光，并且具有检测优良特性的蓝色光或近紫外光优良转换效率和优异的色纯度，满足下述条件（i）至（v）的荧光体：（ⅰ）发射的波长 其峰为510nm以上和542纳米或更短，当与400纳米或455纳米（ii）所述全宽度的光以发射峰的半峰激发其为75nm或更窄，当激发为400nm的光或 455nm的，（ⅲ）的外部量子效率，其是由下式所定义，是0:42或更大，当用400纳米或455纳米，外部量子效率=内部量子效率x吸收效率（IV）的部分的光激发 其表面的物质包括含有氧，和（v）它包含二价和三价金属元素（M II元件），并且其摩尔比与总的二价元素大于1％且小于15％。

公开(公告)号：EP1913631A2

公开(公告)日：2008-04-23

申请号：EP06789507.8

申请日：2006-08-07

申请人： Ziptronix, Inc.

发明人： ENQUIST, Paul, M. ,  FOUNTAIN, Gaius, Gillman, Jr. ,  TONG, Qin-Yi

IPC分类号： H01L21/4763

CPC分类号： H01L21/76838 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/02 ,  H01L24/81 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L27/0688 ,  H01L2224/0401 ,  H01L2224/81121 ,  H01L2224/81201 ,  H01L2224/8123 ,  H01L2224/81801 ,  H01L2224/81894 ,  H01L2224/81931 ,  H01L2224/83894 ,  H01L2224/9202 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/01002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01055 ,  H01L2924/01059 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/10329 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/3025 ,  H01L2224/81

摘要： A method of three-dimensionally integrating elements such as singulated die or wafers and an integrated structure having connected elements such as singulated dies or wafers. Either or both of the die and wafer may have semiconductor devices formed therein. A first element having a first contact structure (12, 82) is bonded to a second element having a second contact structure (17, 87). First and second contact structures can be exposed at bonding and electrically interconnected as a result of the bonding. A via (50, 55) may be etched and filled after bonding to expose and form an electrical interconnect to interconnected first and second contact structures and provide electrical access to this interconnect from a surface.; Alternatively, first and/or second contact structures are not exposed at bonding, and a via is etched and filled after bonding to electrically interconnect first and second contact structures and provide electrical access to interconnected first and second contact structure to a surface. Also, a device may be formed in a first substrate, the device being disposed in a device region of the first substrate and having a first contact structure. A via may be etched, or etched and filled, through the device region and into the first substrate before bonding and the first substrate thinned to expose the via, or filled via after bonding.

摘要翻译： 三维集成元件如单个模具或晶片的三维集成方法以及具有诸如单个模具或晶片的连接元件的集成结构。 芯片和晶片中的任一个或两者可以具有形成在其中的半导体器件。 具有第一接触结构（12,82）的第一元件被结合到具有第二接触结构（17,87）的第二元件。 第一和第二接触结构可以在结合时暴露，并且由于接合而电互连。 通孔（50,55）可以在结合之后进行蚀刻和填充，以暴露并形成互连的第一和第二接触结构的电互连，并提供从表面到该互连的电接口。 或者，第一接触结构和/或第二接触结构在接合时不暴露，并且通孔在接合之后进行蚀刻和填充，从而电互连第一和第二接触结构，并提供对相互连接的第一和第二接触结构与表面的电接触。 此外，器件可以形成在第一衬底中，该器件设置在第一衬底的器件区域中并且具有第一接触结构。 通孔可以在结合之前被蚀刻或蚀刻和填充穿过器件区域并进入第一衬底，并且第一衬底被稀释以露出通孔，或者在结合之后填充通孔。

公开(公告)号：EP1864328A2

公开(公告)日：2007-12-12

申请号：EP06727666.7

申请日：2006-03-14

申请人： NXP B.V.

发明人： BLEDNOV, Igor

IPC分类号： H01L23/66

CPC分类号： H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L2223/6611 ,  H01L2223/6644 ,  H01L2224/45015 ,  H01L2224/48011 ,  H01L2224/48091 ,  H01L2224/4813 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/01055 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19051 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  Y10T29/49018 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2924/207 ,  H01L2924/20753

摘要： A high frequency power device (100) is described comprising a high frequency power transistor (102) having a first main electrode, a second main electrode acting as output electrode and a control electrode, and an output compensation circuit (104) for compensating parasitic output capacitance of the transistor (102). The output compensation circuit is physically positioned relative to the transistor such that a shorter bond wire between the output electrode of the transistor and an output lead of the high frequency power device is obtained. The output compensation circuit (104) therefore is physically located in between an input lead (108) of the high frequency power device (100) and the transistor (102). The inductance introduced by the bond wire Lcomp from the output compensation circuit (104) to the output electrode of the transistor (102) can be used as a feedback signal. Selection of the mutual inductive coupling between the bond wire LcOmP and a bond wire connected to the pre-matching circuit (106) allows to further optimize the properties of the high frequency power device.

公开(公告)号：EP1513043A3

公开(公告)日：2007-08-01

申请号：EP04254222.5

申请日：2004-07-14

申请人： Renesas Technology Corp.

发明人： Nishizawa, Hirotaka Renesas Technology Corp. ,  Higuchi, Akira Renesas Technology Corp. ,  Osawa, Kenji Renesas Technology Corp. ,  Wada, Tamaki Renesas Technology Corp. ,  Sugiyama, Michiaki Renesas Technology Corp. ,  Osako, Junichiro Renesas Technology Corp.

IPC分类号： G06F1/00 ,  G06K19/077

CPC分类号： G06K19/077 ,  G06K19/07732 ,  H01L23/5388 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L25/0652 ,  H01L2224/05554 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/49171 ,  H01L2224/4943 ,  H01L2224/73265 ,  H01L2225/06562 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/01055 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12041 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/3011 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： The present invention provides a memory card equipped with an interface controller connected to external connecting terminals, a memory connected to the interface controller, and a security controller connected to the interface controller. A second external connecting terminal capable of supplying an operating power supply to the security controller is provided aside from a first external connecting terminal which supplies an operating power supply to the interface controller and the memory. An interface unit of the interface controller connected to the security controller receives the operating power supply from the second external connecting terminal and thereby enables a stop of the supply of the operating power supply from the first external connecting terminal. Even if the supply of the operating power supply to the interface controller is cut off, the output of the interface unit is not brought to an indefinite state.