Opto-electric hybrid board
    3.
    发明公开
    Opto-electric hybrid board 审中-公开
    Optoelektrische Hybridplatte

    公开(公告)号:EP2731410A1

    公开(公告)日:2014-05-14

    申请号:EP13179698.9

    申请日:2013-08-08

    Abstract: An opto-electric hybrid board which is capable of significantly reducing stresses applied to a bent portion thereof is provided. The opto-electric hybrid board includes a stacked electric circuit board (E) and an optical waveguide (W). The electric circuit board (E) includes an insulative layer (1) having front and back surfaces, electrical interconnect lines (2) formed on the front surface of the insulative layer (1), and an insulative coverlay (3) formed on the front surface of the insulative layer (1) and for covering and protecting the electrical interconnect lines (2). The optical waveguide (W) includes a first cladding layer (6) having a front surface, cores (7) formed in a pattern on the front surface of the first cladding layer (6), and a second cladding layer (8) covering the cores (7). Part of the opto-electric hybrid board is defined as a to-be-bent portion inwhich the coverlay (3) and the optical waveguide (W) are disposed in non-overlapping relation.

    Abstract translation: 提供能够显着降低施加到其弯曲部分的应力的光电混合板。 光电混合基板包括堆叠电路板(E)和光波导(W)。 电路板(E)包括具有前表面和后表面的绝缘层(1),形成在绝缘层(1)的前表面上的电互连线(2)和形成在绝缘层(1)上的绝缘覆盖层 绝缘层(1)的表面并且用于覆盖和保护电互连线(2)。 光波导(W)包括具有前表面的第一包层(6),在第一包层(6)的前表面上以图案形成的芯体(7)和覆盖第一包层 核心(7)。 光电混合板的一部分被定义为覆盖层(3)和光波导(W)以非重叠关系设置的弯曲部分。

    WIRING BOARD AND ITS MANUFACTURING METHOD
    5.
    发明公开
    WIRING BOARD AND ITS MANUFACTURING METHOD 审中-公开
    接线板及其制造方法

    公开(公告)号:EP2173147A1

    公开(公告)日:2010-04-07

    申请号:EP07790805.1

    申请日:2007-07-13

    Abstract: A wiring board 19 is structured by laminating first substrate 1, second substrate 2 having a smaller mounting area than that of first substrate 1, and base substrate 3 positioned between first substrate 1 and second substrate 2, where at least a portion of the periphery is made thinner than the central portion. Vias 44 are formed in at least either first substrate 1 or second substrate 2. In base substrate 3, the thickness of the portion bonded only to first substrate 1 is less than that of the portion sandwiched between first substrate 1 and second substrate 2.

    Abstract translation: 布线板19通过层叠第一基板1,安装面积小于第一基板1的第二基板2和位于第一基板1和第二基板2之间的基板3而构成,其中至少一部分周边是 比中央部分薄。 在第一基板1或第二基板2中的至少一个中形成通路44.在基板3中,仅与第一基板1接合的部分的厚度小于夹在第一基板1与第二基板2之间的部分的厚度。

    Wiring substrate and manufacturing method thereof, and semiconductor apparatus
    8.
    发明公开
    Wiring substrate and manufacturing method thereof, and semiconductor apparatus 审中-公开
    Leitersubstrat und Herstellungsverfahrendafürsowie Halbleitervorrichtung

    公开(公告)号:EP1871153A2

    公开(公告)日:2007-12-26

    申请号:EP07011995.3

    申请日:2007-06-19

    Abstract: In a semiconductor apparatus, a semiconductor element (70,71) is mounted on a wiring substrate (31). Wiring patterns (40) and protrusions (32) are formed on a surface of a substrate (30) with the wiring patterns (40) extending on tops of the protrusions (32). The surface of the substrate (30) on which the wiring patterns (40) are formed are covered with an insulating layer (60). Surfaces of connection parts (40c) of the wiring patterns (40) formed on the tops of the protrusions (32) are formed with the surfaces of the connection parts (40c) exposed to a surface of the insulating layer (60) on a level with the surface of the insulating layer (60) or in a position lower than the surface of the insulating layer. The connection parts (40c) are formed as pads for connection formed in alignment with connection electrodes of the semiconductor element. The semiconductor element (70,71) is mounted by making electrical connection to the connection parts (40c) by flip chip bonding.

    Abstract translation: 在半导体装置中,将半导体元件(70,71)安装在布线基板(31)上。 布线图案(40)在突起(32)的顶部延伸,形成在基板(30)的表面上的布线图案(40)和突起(32)。 其上形成有布线图案(40)的基板(30)的表面被绝缘层(60)覆盖。 形成在突起(32)的顶部上的布线图案(40)的连接部分(40c)的表面形成有暴露于绝缘层(60)的表面的连接部分(40c)的表面在一定程度上 与绝缘层(60)的表面或位于比绝缘层的表面低的位置。 连接部分(40c)形成为与半导体元件的连接电极对准的连接用焊盘。 半导体元件(70,71)通过倒装芯片接合与连接部件(40c)进行电连接来安装。

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