摘要:
PROBLEM TO BE SOLVED: To provide a semiconductor device which has suppressed warpage nearby a semiconductor element and has enhanced reliability, and is thinner and has higher density, and to provide a method of manufacturing the same. SOLUTION: The semiconductor device includes the semiconductor element 1 having a pad on one surface, an insulating layer 2 in which the semiconductor element 1 is incorporated, a wiring layer 3 arranged on the insulating layer 2, a via connection portion 4 buried in the insulating layer 2 and electrically connecting the corresponding wiring layer 3 to the pad of the semiconductor element 1, and an adhesion layer 5 arranged on the reverse surface of the semiconductor element 1 on the opposite side from the pad side, the reverse surface of the semiconductor element 1 at least partially having a hollow 6 or recessed portion. COPYRIGHT: (C)2010,JPO&INPIT
摘要:
PROBLEM TO BE SOLVED: To provide a semiconductor package capable of reducing warpage.SOLUTION: A semiconductor package 1 comprises: a metal plate 10; a semiconductor chip 12 bonded onto a first surface 10A of the metal plate 10; a first insulating layer 11 covering a second surface 10B of the metal plate 10; and a second insulating layer 20 formed so as to cover the first surface 10A and a side surface of the metal plate 10, and a first surface 12A and a side surface of the semiconductor chip 12. The semiconductor package 1 also includes a wiring structure 30 which is laminated on the second insulating layer 20 and in which a first wiring layer 31 and a second wiring layer 33 electrically connected to the semiconductor chip 12 and an interlayer insulating layer 32 laminated on the first wiring layer 31 are laminated. The metal plate 10 is formed thinner than the semiconductor chip 12.
摘要:
PROBLEM TO BE SOLVED: To provide a semiconductor device built-in substrate module which achieves high integration and downsizing of a semiconductor device including specific functions and simplifies and streamlines the manufacturing processes regarding component mounting, and to provide a manufacturing method of the semiconductor device built-in substrate module.SOLUTION: In a semiconductor device built-in substrate module 10, a substrate device part 20 where a semiconductor device 30 having a wafer level CSP structure is incorporated with a core substrate 21 and a coil part 50 serving as a function part having desired functions are integrally formed. Further, the substrate device part 20 and the coil part 50 are electrically connected with each other through wiring layers, vias, and through electrodes which form lamination wiring.
摘要:
PROBLEM TO BE SOLVED: To reduce manufacturing cost of a laminated chip package by increasing the number of laminated chip packages which can be manufactured per unit time.SOLUTION: A laminated semiconductor substrate 100 is formed by lamination of a plurality of semiconductor substrates 1. Each semiconductor substrate 1 includes: a plurality of scribe grooves 20, 21 formed along scribe lines; a plurality of device regions 10 in which semiconductor devices are formed and insulated, respectively; and a plurality of wiring electrodes 15 connected to the semiconductor devices respectively formed in the plurality of device regions 100 and extending from the device regions 10 to the inside of the scribe grooves 20, 21. The plurality of the wiring electrodes 15 are arranged by a partial layout pattern and extend to the inside of the scribe grooves 20, 21 from either one of two device regions 10 neighboring to each other across the scribe grooves 20, 21.
摘要:
PROBLEM TO BE SOLVED: To provide a method of manufacturing an embedded printed circuit board in which a cavity for embedding a chip is formed on an insulating layer configured of a photosensitive film by exposure and development processes.SOLUTION: The embedded printed circuit board includes: a core layer on which a cavity is formed; a copper foil layer whose top is coated with an adhesive layer for fixing the chip; the chip mounted on the cavity of the core layer arranged on the top of the copper foil layer coated with the adhesive layer; an insulating layer formed between the cavity and the chip and on the top of the core layer; and a circuit layer formed on the insulating layer. The core layer is made of photosensitive compositions including a photosensitive monomer and a photoinitiator.
摘要:
PROBLEM TO BE SOLVED: To provide a semiconductor package allowing increase in the density of a wiring pattern which can be led through a gap between exposed surfaces of bumps formed on respective electrode terminals in a plurality of semiconductor elements having different thicknesses and fixed to one surface of a support plate.SOLUTION: In the semiconductor package, a plurality of semiconductor elements 14a and 14b having different thicknesses are fixed to one surface of a support plate 10 through a resin layer 12 so that terminal surfaces of electrode terminals 16 of the semiconductor elements 14a and 14b may be flush. The resin layer 12 is provided on the entire of the one surface of the support plate 10. The semiconductor elements 14a and 14b have the opposite surfaces of the terminal surfaces fixed to the resin layer 12. There is provided an insulating layer 20 for covering at least a part of the terminal surfaces and lateral surfaces of the semiconductor elements 14a and 14b and the entire surface of the resin layer 12. Tapered bumps 18 formed on the terminal surfaces of the semiconductor elements 14a, 14b are formed penetrating through the insulating layer 20, and the tip surfaces of the tapered bumps 18 exposed on the surface of the insulating layer 20 are connected to wiring patterns 22.
摘要:
A light emitting diode comprises a permanent substrate having a chip holding space formed on a first surface of the permanent substrate; an insulating layer and a metal layer sequentially formed on the first surface of the permanent substrate and the chip holding space, wherein the metal layer further comprises a first area and a second area not being contacted to each other; a chip having a first surface attached on a bottom of the chip holding space, contacted to the first area of the metal layer but not contacted to the second area of the metal layer; a filler structure filled between the chip holding space and the chip; and a first electrode formed on a second surface of the chip. The chip comprises a light-emitting region and an electrical connection between the first area of the metal layer and the light emitting region is realized by using a chip-bonding technology.