Abstract:
PROBLEM TO BE SOLVED: To provide a printed circuit board which is capable of preventing a surface insulating resin layer from being warped at reflow in the mounting region of a semiconductor device. SOLUTION: Conductor wiring layers 12, and 14b and interlayer insulating resin layers 13 are alternately laminated on both the main surfaces of a core board 11, and a surface insulating resin layer 16 is formed covering the uppermost conductor wiring layer formed on the surface of the core board 11 for the formation of a multilayer printed circuit board 1. A square region is removed from the surface insulating resin layer 16 which is formed on the interlayer insulating resin layer 13, to form a vacant area 17 at the center within the mounting region 10 of a semiconductor device in a region just under the semiconductor device excluding conductor lands 14a bonded to the external electrodes of the semiconductor device. COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To obtain a polyimide-based adhesive having a coefficient of thermal expansion of ≤50ppm/°C. SOLUTION: The polyimide-based adhesive comprises (a) a polyimide base polymer which is a polyimide base polymer having a glass transition temperature in a range of from 150 to 300°C, is present in an amount from 25 to 95 weight percent based on the total weight of the polyimide-based adhesive and has a coefficient of thermal expansion above 50 ppm/°C and (b) a microfiber reinforcing material having an average diameter of 2-2,000 nanometer and an average length of 10-10 7 nanometer in an amount from 5 to 75 weight percent, based upon the total weight of the polyimide-based adhesive and has a coefficient of thermal expansion of ≤50 ppm/°C. COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a thin film embedded capacitance having a large electric capacitance per unit, and to provide its manufacturing method. SOLUTION: The thin film embedded capacitance comprises a metal thin film 2P for wiring comprising a metal material in an unyielded state; a first electrode 4 formed on the metal thin film for wiring; a dielectric material layer 6 formed by a sputtering method on the first electrode and the metal thin film for wiring at a temperature not lower than room temperature, and at lower than the yielding temperature of the metal thin film for wiring, and having a smaller coefficient of thermal expansion than that of the metal thin film wiring; and a second electrode 8 formed on the dielectric material layer. Its manufacturing method is also provided. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a polymer composition having improved stability. SOLUTION: Various embodiments of the polymer composition are provided. In one embodiment, the polymer composition comprises about 50 to about 95 wt.% of a polyetherimide and about 5 to about 50 wt.% of an inorganic substance. The polymer composition has a thermal expansion coefficient of less than about 50 ppm/°C, when formed into a film. The film has average roughness of
Abstract:
PROBLEM TO BE SOLVED: To provide an inexpensive flexible film package module and a method for manufacturing the same. SOLUTION: In the flexible film package and the method for manufacturing the same, a first insulation substrate 10 in which the tape film of the flexible film package module is made of a polyimide material and a second insulation substrate 170 less expensive than the first insulation substrate are used in a linked state. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a substrate for semiconductor device that can mount a semiconductor element with a reduced strength by preventing cracks generating in a substrate in the case when a material approximating to the coefficient of thermal expansion of the semiconductor element is used as a core substrate. SOLUTION: The substrate for semiconductor device is provided with wiring patterns 12, 14 and 16 formed on one surface or both surfaces of a core substrate 10 with resin layers 18, 20 and 22 in between. The core substrate 10 is made of a material approximating to the coefficient of thermal expansion of the semiconductor element, and a resin layer 24 as the outermost layer of the substrate is made of a resin material of which strength and elongation is higher than that of one used for the resin layers 18, 20 and 22 inside the substrate. Thus, a failure such as cracks or deformation occurring in the substrate due to a thermal stress between the core substrate 10 and the resin layers 18, 20 and 22 and the wiring patterns 12, 14 and 16 inside the substrate can be prevented. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a multilayer interconnection structure using a LCP dielectric layer and a method for forming the structure. SOLUTION: Each of a first and second LCP (liquid crystal polymer) dielectric layers is bonded directly to each of a first and second opposed layers of a heat conduction layer without an extrinsic adhesive material that bonds the heat conduction layer to either of a first and second LCP dielectric layers. Alternatively, each of a first and second 2S1P substructures is bonded directly to each of a first and second opposed layers of a LCP dielectric bonding layer without an extrinsic adhesive material that bonds the LCP dielectric bonding layer to either of the first and second 2S1P substructures. COPYRIGHT: (C)2004,JPO
Abstract:
PROBLEM TO BE SOLVED: To provide a laminated film for packaging electronic components that can easily and effectively reduce the warpage in a widthwise direction of the laminated firm for packaging electronic components, and to provide a film carrier tape for packaging electronic components. SOLUTION: In a laminated film 10 where a conductor layer 11 and an insulating film 14 are subjected to thermocompression bonding, a coefficient of thermal expansion in the widthwise direction of the insulating film 14 is nearly the same as or larger than that in the widthwise direction of the conductor layer 11. COPYRIGHT: (C)2003,JPO