公开(公告)号：JP5136305B2

公开(公告)日：2013-02-06

申请号：JP2008231246

申请日：2008-09-09

申请人： 日立化成工業株式会社

发明人： 哲也 榎本 ,  一尊 本田 ,  朗 永井 ,  恵一 畠山

IPC分类号： H01L21/60 ,  H01L21/301 ,  H01L21/56 ,  H01L23/29 ,  H01L23/31

CPC分类号： H01L24/27 ,  H01L21/6836 ,  H01L24/29 ,  H01L24/32 ,  H01L24/75 ,  H01L24/81 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/274 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/75 ,  H01L2224/75251 ,  H01L2224/75252 ,  H01L2224/81121 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81801 ,  H01L2224/83191 ,  H01L2224/94 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/07802 ,  H01L2924/15788 ,  H01L2224/27 ,  H01L2924/00

摘要： PROBLEM TO BE SOLVED: To provide a method of efficiently manufacturing a semiconductor device which has high reliability of connection between a semiconductor chip and a substrate. SOLUTION: The method of manufacturing the semiconductor device includes a coating process of forming an insulating resin layer 3 such that projection electrodes 2 formed on one surface S1 of a semiconductor wafer 1 are embedded, a dicing preparation process of fixing the semiconductor wafer 1 on a dicing tape 5, a dicing process of cutting the semiconductor wafer 1 together with the insulating resin layer 3 to obtain a semiconductor chip 8, a pickup process of picking up the semiconductor chip 8 having the insulating resin layer 3, a position adjusting process of positioning an electrode 12a provided to the surface of a substrate 12 and the projection electrode 2 of the semiconductor chip 8, and a connection process of pressing the semiconductor chip 8 against the substrate 12 and applying heat after the position adjusting process to mount the semiconductor chip 8 on the substrate 12. COPYRIGHT: (C)2010,JPO&INPIT

公开(公告)号：JP4934895B2

公开(公告)日：2012-05-23

申请号：JP2000312163

申请日：2000-10-12

申请人： 日立化成工業株式会社

发明人： 敏彦 伊藤 ,  勝 田中 ,  恵一 畠山 ,  禎一 稲田

IPC分类号： C09J7/00 ,  C09J163/00 ,  C09J109/02 ,  C09J133/08 ,  C09J133/14 ,  H01L21/60

公开(公告)号：JPWO2009048060A1

公开(公告)日：2011-02-17

申请号：JP2009536999

申请日：2008-10-07

申请人： 日立化成工業株式会社

发明人： 畠山　恵一 ,  恵一 畠山 ,  祐樹 中村 ,  祐樹 中村

IPC分类号： H01L21/301 ,  H01L21/52 ,  H01L25/065 ,  H01L25/07 ,  H01L25/18

CPC分类号： H01L21/67132 ,  B23K26/0057 ,  B23K26/40 ,  B23K2201/40 ,  B23K2203/50 ,  B28D5/0011 ,  B28D5/0052 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/3121 ,  H01L24/27 ,  H01L24/29 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L2221/68336 ,  H01L2224/274 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/83855 ,  H01L2224/8388 ,  H01L2224/83885 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01082 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/10156 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/15747 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： 本発明の接着フィルム付き半導体チップの製造方法は、半導体ウェハ、半導体用接着フィルム及びダイシングテープがこの順で積層され、半導体用接着フィルムが1〜15μmの範囲の厚みを有し且つ5%未満の引張破断伸度を有し該引張破断伸度が最大荷重時の伸度の110%未満であり、半導体ウェハがレーザー光の照射によって形成された半導体ウェハを複数の半導体チップに分割するための改質部を有する積層体を準備する工程と、ダイシングテープを複数の半導体チップが互いに離れる方向に引き伸ばして半導体用接着フィルムは分割せずに半導体ウェハを複数の半導体チップに分割する工程と、複数の半導体チップをそれぞれ積層体の積層方向にピックアップすることによって半導体用接着フィルムを分割して接着フィルム付き半導体チップを得る工程とを備える。

公开(公告)号：JPWO2004111148A1

公开(公告)日：2006-07-20

申请号：JP2005506989

申请日：2004-06-10

申请人： 日立化成工業株式会社

发明人： 増子　崇 ,  崇 増子 ,  大久保　恵介 ,  恵介 大久保 ,  畠山　恵一 ,  恵一 畠山 ,  湯佐　正己 ,  正己 湯佐

IPC分类号： C09J7/00 ,  C09J7/02 ,  C09J11/04 ,  C09J11/06 ,  C09J161/06 ,  C09J163/00 ,  C09J179/08 ,  H01L21/00 ,  H01L21/52 ,  H01L21/58 ,  H01L21/68

CPC分类号： H01L21/6835 ,  C09J7/10 ,  C09J7/35 ,  C09J2201/36 ,  C09J2463/00 ,  C09J2479/08 ,  H01L21/67132 ,  H01L21/6836 ,  H01L24/27 ,  H01L24/73 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2221/6839 ,  H01L2221/68395 ,  H01L2224/274 ,  H01L2224/27436 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/8319 ,  H01L2224/83856 ,  H01L2224/8388 ,  H01L2224/83885 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01067 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/3512 ,  H01L2924/00014

摘要： 本発明は、極薄ウェハの保護テープ、又は貼り合わせるダイシングテープの軟化温度よりも低い温度でウェハ裏面にラミネートでき、かつウェハの反り等の熱応力を低減でき、半導体装置の製造工程を簡略化でき、さらに耐熱性及び耐湿信頼性に優れるダイ接着用フィルム状接着剤、当該フィルム状接着剤とダイシングテープを貼り合せた接着シートならびに半導体装置を提供することを目的とする。

公开(公告)号：JP5110066B2

公开(公告)日：2012-12-26

申请号：JP2009240348

申请日：2009-10-19

申请人： 日立化成工業株式会社

发明人： 崇 増子 ,  恵介 大久保 ,  恵一 畠山 ,  正己 湯佐

IPC分类号： C09J179/08 ,  C09J7/00 ,  C09J7/02 ,  C09J163/00 ,  C09J183/10 ,  H01L21/00 ,  H01L21/301 ,  H01L21/52 ,  H01L21/58 ,  H01L21/68

CPC分类号： H01L21/6835 ,  C09J7/10 ,  C09J7/35 ,  C09J2201/36 ,  C09J2463/00 ,  C09J2479/08 ,  H01L21/67132 ,  H01L21/6836 ,  H01L24/27 ,  H01L24/73 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2221/6839 ,  H01L2221/68395 ,  H01L2224/274 ,  H01L2224/27436 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/8319 ,  H01L2224/83856 ,  H01L2224/8388 ,  H01L2224/83885 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01067 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/3512 ,  H01L2924/00014

摘要： An object of the present invention is to provide a die-adhering adhesive film which can be laminated on a back of a wafer at a temperature lower than a softening temperature of a protecting tape for an ultra-thin wafer, or a dicing tape to be laminated, can reduce a thermal stress such as warpage of a wafer, can simplify a step of manufacturing a semiconductor device, and is excellent in heat resistance and humidity resistance reliance, an adhesive sheet in which the adhesive film and a dicing tape are laminated, as well as a semiconductor device.

摘要翻译： 本发明的目的是提供一种芯片粘附粘合剂膜，其可以在低于超薄晶片的保护带或切割胶带的软化温度的温度下层压在晶片的背面上 可以降低晶片的翘曲等热应力，能够简化半导体装置的制造工序，耐热性和耐湿性依赖性优异，粘贴薄膜和切割胶带的粘合片层叠， 以及半导体器件。

公开(公告)号：JP4858459B2

公开(公告)日：2012-01-18

申请号：JP2008035245

申请日：2008-02-15

申请人： 日立化成工業株式会社

发明人： 圭二 住谷 ,  健男 富山 ,  哲郎 岩倉 ,  靖 島田 ,  広幸 川上 ,  隆行 松崎 ,  弘之 栗谷 ,  裕子 田中 ,  恵一 畠山 ,  禎一 稲田 ,  羊一 細川 ,  雅雄 鈴木

IPC分类号： H01L21/52 ,  C08G59/18 ,  C09J7/02 ,  C09J113/00 ,  C09J161/06 ,  C09J163/00 ,  H01L23/14 ,  H01L23/29 ,  H01L23/31

CPC分类号： H01L23/14 ,  C08G59/18 ,  C08L2666/02 ,  C08L2666/04 ,  C09J7/10 ,  C09J7/35 ,  C09J163/00 ,  C09J2205/102 ,  C09J2433/00 ,  C09J2463/00 ,  H01L23/145 ,  H01L23/293 ,  H01L23/3114 ,  H01L23/3737 ,  H01L23/564 ,  H01L2224/50 ,  H01L2924/01019 ,  H01L2924/01068 ,  H01L2924/01087 ,  H01L2924/12044 ,  H01L2924/15311 ,  H05K1/0271 ,  Y10T156/1089 ,  Y10T428/2839 ,  Y10T428/287 ,  Y10T428/31511

摘要： The present invention provides an adhesive composition which comprises (a) an epoxy resin, (b) a curing agent and (c) a polymer compound incompatible with said epoxy resin, and further optionally comprises (d) a filler and/or (e) a curing accelerator; a process for producing an adhesive composition, comprising: mixing (a) the epoxy resin and (b) the curing agent with (d) the filler, followed by mixing the resultant mixture with (c) the polymer compound incompatible with the epoxy resin; an adhesive film comprising the above-mentioned adhesive composition formed into a film; a substrate for mounting semiconductor comprising a wiring board and the above-mentioned adhesive film disposed thereon on its side where chips are to be mounted; and a semiconductor device which comprises the above-mentioned adhesive film or the substrate for mounting semiconductor.

公开(公告)号：JP4258984B2

公开(公告)日：2009-04-30

申请号：JP2001074268

申请日：2001-03-15

申请人： 日立化成工業株式会社

发明人： 道生 宇留野 ,  雅昭 安田 ,  健男 富山 ,  隆行 松崎 ,  恵一 畠山 ,  禎一 稲田

IPC分类号： C09J7/00 ,  C09J163/00 ,  C09J201/00 ,  H01L21/52 ,  H01L23/12 ,  H01L25/065 ,  H01L25/07 ,  H01L25/18

CPC分类号： H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/83192 ,  H01L2224/83856 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01087 ,  H01L2924/15311 ,  H01L2924/0665 ,  H01L2924/00

摘要： PROBLEM TO BE SOLVED: To provide an adhesive film useful for connecting semiconductor chips, forming no space even when heated and press-adhered at a small pressure, capable of connecting a semiconductor chip to a member for outside connection or semiconductors to each other, and having excellent press adhesivity and excellent workability in the press-adhesion process, to provide a connection member which is used for semiconductors, uses the adhesive film and has high reliability, and to provide a semiconductor device. SOLUTION: This adhesive film can heat and press-adhere a semiconductor chip to a wiring member for loading the semiconductor chip and for outside connection, or the semiconductor chip to an another semiconductor chip at a press-adhesion pressure of 0.01 to 0.5 MPa. The adhesive film can preferably heat and press-adhere the semiconductor chip and the like in conditions satisfying formula 1: 1×10 (1) [F is press-adhesion pressure; (t) is a press adhesion time; and (η) is a melt viscosity at a press adhesive temperature]. The adhesive film preferably has a melt viscosity of >=1×10 Pa.s at a temperature of Pa.s at a press-adhesion temperature.

公开(公告)号：JP4168887B2

公开(公告)日：2008-10-22

申请号：JP2003326136

申请日：2003-09-18

申请人： 日立化成工業株式会社

发明人： 且英 愛知 ,  耕治 本村 ,  哲也 榎本 ,  朗 永井 ,  耕司 田崎 ,  恵一 畠山

IPC分类号： H01L21/60

CPC分类号： H01L2224/16 ,  H01L2224/16225 ,  H01L2224/29012 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2924/01019 ,  H01L2924/01046 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/00

摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device exhibiting satisfactory connection reliability by using a thermosetting adhesive film and conducting flip chip connection by metal bonding by the use of supersonic vibration, and to provide a manufacturing method for obtaining high productivity. SOLUTION: The method for manufacturing the semiconductor device comprises steps of (a) preparing a semiconductor chip having a projecting connection terminal, a substrate on which a wiring pattern is formed, and a thermosetting adhesive film; (b) forming an adhesive resin layer by applying the thermosetting adhesive film on the surface of the substrate; (c) electrically connecting the projecting connection terminal of the semiconductor chip and the wiring pattern on the surface of the substrate, and adhering the semiconductor chip and the substrate by the adhering resin layer by applying the supersonic vibration in a heated/pressurized condition after positioning the projecting connection terminal of the semiconductor chip and the wiring pattern on the surface of the substrate; (d) and applying heat treatment to make a curing reaction rate of the adhesive resin layer not less than 80%. COPYRIGHT: (C)2005,JPO&NCIPI

公开(公告)号：JP4075801B2

公开(公告)日：2008-04-16

申请号：JP2003523555

申请日：2002-08-27

申请人： 日立化成工業株式会社

发明人： 茂樹 加藤木 ,  崇 増子 ,  恵介 大久保 ,  広幸 川上 ,  俊之 柳川 ,  恵一 畠山 ,  禎一 稲田

IPC分类号： C09J7/02 ,  C09J5/00 ,  C09J163/00 ,  C09J179/08 ,  C09J201/02 ,  H01L21/52 ,  H01L21/68

CPC分类号： H01L21/6836 ,  C09J7/22 ,  C09J7/38 ,  C09J163/00 ,  C09J2203/326 ,  C09J2463/00 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2224/83 ,  H01L2224/83191 ,  H01L2924/01012 ,  H01L2924/01029 ,  H01L2924/30105 ,  H01L2924/351 ,  H01L2924/3512 ,  H01L2924/00

摘要： An adhesive sheet comprising a pressure-sensitive adhesive layer and a substrate layer, wherein the strength of adhesion between the pressure-sensitive adhesive layer and the substrate layer is controlled by means of irradiation with a radiation and the pressure-sensitive adhesive layer comprises the following ingredients: a a thermoplastic resin, b a heat-polymerizable ingredient, and c a compound which generates a base upon irradiation with the radiation. The adhesive sheet satisfies the following inconsistent requirements: it should have tackiness sufficient to keep semiconductor elements held thereon during dicing and, upon subsequent irradiation with a radiation for regulating the strength of adhesion between the pressure-sensitive adhesive layer and the substrate, come to have such low tackiness that it does not damage the elements during pickup.

公开(公告)号：JP5045745B2

公开(公告)日：2012-10-10

申请号：JP2009509251

申请日：2008-03-31

申请人： 日立化成工業株式会社

发明人： 祐樹 中村 ,  勉 北勝 ,  陽二 片山 ,  恵一 畠山

IPC分类号： H01L21/301 ,  H01L21/52

CPC分类号： C09J201/00 ,  B23K26/0057 ,  B23K26/364 ,  B23K26/40 ,  B23K2201/40 ,  B23K2203/172 ,  B23K2203/50 ,  B28D5/0082 ,  H01L21/67132 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L24/27 ,  H01L24/73 ,  H01L24/83 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2224/274 ,  H01L2224/29006 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2224/92247 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01077 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/15747 ,  H01L2924/15788 ,  H01L2924/181 ,  Y10T428/28 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/3512

摘要： There is provided a method that allows semiconductor chips to be obtained from a semiconductor wafer at high yield, while sufficiently inhibiting generation of chip cracks and burrs. The method for manufacturing a semiconductor chip comprises a step of preparing a laminated body having a semiconductor wafer, an adhesive film for a semiconductor and dicing tape laminated in that order, the semiconductor wafer being partitioned into multiple semiconductor chips and notches being formed from the semiconductor wafer side so that at least a portion of the adhesive film for a semiconductor remains uncut in its thickness direction, and a step of stretching out the dicing tape in a direction so that the multiple semiconductor chips are separated apart, to separate the adhesive film for a semiconductor along the notches. The adhesive film for a semiconductor has a tensile breaking elongation of less than 5% and the tensile breaking elongation of less than 110% of the elongation at maximum load.