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公开(公告)号：KR1020170121743A
公开(公告)日：2017-11-02
申请号：KR1020177021195
申请日：2015-02-25
申请人： 인텔 코포레이션
发明人： 파이탐바람스리니바스브이 , 이규오
IPC分类号： H01L23/498 , H01L23/00
CPC分类号： H01L24/05 , B23K35/262 , C22C13/00 , C22C19/03 , H01L23/49811 , H01L23/49838 , H01L23/49866 , H01L24/03 , H01L24/13 , H01L24/16 , H01L24/81 , H01L2224/0401 , H01L2224/05147 , H01L2224/05564 , H01L2224/0558 , H01L2224/05644 , H01L2224/05655 , H01L2224/05657 , H01L2224/0566 , H01L2224/05664 , H01L2224/0568 , H01L2224/05683 , H01L2224/05684 , H01L2224/13026 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13139 , H01L2224/13147 , H01L2224/16227 , H01L2224/16238 , H01L2224/81444 , H01L2924/01015 , H01L2924/014 , H01L2924/15311 , H01L2924/00014 , H01L2924/01082 , H01L2924/01083 , H01L2924/01029 , H01L2924/01047
摘要： 표면마감부가마이크로전자구조체내에형성될수 있는데, 표면마감부는다층층간부구조체를포함할수 있다. 그러므로, 층간부구조체의필요한특성, 예를들어유연성및 일렉트로-마이그레이션저항은, 단일층으로써이들특성을얻으려고시도하기보다, 상이한재료층들에의해만족될수 있다. 하나의실시예에서, 다층층간부구조체는이층구조체를포함할수 있는데, 제1 층은솔더상호연결부에근접하여형성되고, 솔더상호연결부와의연성조인트를형성하는재료를포함하며, 제2 층은제1 층및 상호연결패드간에형성된강한일렉트로-마이그레이션저항을가지는재료를포함한다. 추가의실시예에서, 제3 층이상호연결패드에인접하여형성될수 있는데상호연결패드와의연성조인트를형성한다.
摘要翻译： 可以在微电子结构内形成表面光洁度，该表面光洁度可以包括多层互连结构。 因此，层间绝缘体结构所需的性能（例如柔性和抗电迁移性）可以通过不同的材料层来满足，而不是试图将这些性质作为单层来获得。 在一个实施例中，多层夹层结构可以包括该层结构，其中第一层靠近焊料互连形成并且包括与焊料互连形成柔性接头的材料， 并且在第一层和互连焊盘之间形成具有强电迁移电阻的材料。 在另一个实施例中，其可以形成为与第三层奇数连接焊盘相邻以与互连焊盘形成柔性接头。
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公开(公告)号：KR1020170026957A
公开(公告)日：2017-03-09
申请号：KR1020150123195
申请日：2015-08-31
申请人： 삼성디스플레이 주식회사
发明人： 김무겸
CPC分类号： H01L24/97 , H01L21/6835 , H01L24/03 , H01L24/80 , H01L24/81 , H01L24/92 , H01L24/95 , H01L2221/68327 , H01L2221/6834 , H01L2221/68368 , H01L2224/03002 , H01L2224/04 , H01L2224/80003 , H01L2224/80201 , H01L2224/80203 , H01L2224/80224 , H01L2224/80401 , H01L2224/80417 , H01L2224/80423 , H01L2224/80424 , H01L2224/80438 , H01L2224/80439 , H01L2224/80444 , H01L2224/80447 , H01L2224/80455 , H01L2224/80464 , H01L2224/80466 , H01L2224/80469 , H01L2224/80471 , H01L2224/80478 , H01L2224/8048 , H01L2224/80484 , H01L2224/81001 , H01L2224/81201 , H01L2224/81203 , H01L2224/81224 , H01L2224/81401 , H01L2224/81417 , H01L2224/81423 , H01L2224/81424 , H01L2224/81438 , H01L2224/81439 , H01L2224/81444 , H01L2224/81447 , H01L2224/81455 , H01L2224/81464 , H01L2224/81466 , H01L2224/81469 , H01L2224/81471 , H01L2224/81478 , H01L2224/8148 , H01L2224/81484 , H01L2224/92 , H01L2224/9222 , H01L2224/95 , H01L2224/95001 , H01L2224/95085 , H01L2224/951 , H01L2224/95136 , H01L2224/95144 , H01L2224/97 , H01L2924/10156 , H01L2924/12041 , H01L2224/03 , H01L2924/00012 , H01L2924/00014 , H01L2924/0106 , H01L2924/01003 , H01L2924/0102 , H01L2224/80 , H01L2224/81 , H01L2221/68304 , H01L21/78 , H01L2221/68381
摘要： 본발명의일 측면에따르면, 복수의개구가형성된마스크를용액에담그고, 상기마스크의각 개구에 LED 칩을안착시킴; 복수의제1 배선이형성된제1 플렉서블기판을상기마스크아래에배치하고, 상기복수의제1 배선을상기개구의위치에대응되도록정렬함; 상기마스크와함께상기제1 플렉서블기판을용액밖으로꺼내고, 상기복수의 LED 칩과상기복수의제1 배선을접합함; 상기복수의 LED 칩위에, 복수의제2 배선이형성된제2 플렉서블기판을정렬하고, 상기복수의 LED 칩과상기복수의제2 배선을접합함;을포함하는표시장치의제조방법을제공한다.
摘要翻译： 制造显示装置的方法包括：将包括开口的掩模浸入溶液中; 将座位发光二极管芯片分别放置在掩模的开口中; 在所述掩模下面布置包括第一布线的第一柔性基板，并且将所述第一布线对准于所述掩模的开口; 从溶液中除去第一柔性基板，其中第一布线对应于掩模的开口与掩模一起，发光二极管芯片位于其开口中; 将发光二极管芯片和第一布线彼此接合; 提供第二柔性基板，其上包括第二布线，并且将所述第二布线对准分别对应于所述发光二极管芯片; 并且将发光二极管芯片和第二布线彼此接合，以形成显示装置。
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公开(公告)号：KR1020160112210A
公开(公告)日：2016-09-28
申请号：KR1020150037481
申请日：2015-03-18
申请人： 앰코 테크놀로지 코리아 주식회사
IPC分类号： H01L21/768 , H01L23/00 , H01L21/56
CPC分类号： H01L21/4857 , H01L21/561 , H01L21/568 , H01L21/6835 , H01L23/3128 , H01L23/49816 , H01L23/49822 , H01L23/5389 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/32 , H01L24/81 , H01L24/83 , H01L24/92 , H01L24/97 , H01L2221/68318 , H01L2221/68331 , H01L2221/68345 , H01L2224/1132 , H01L2224/131 , H01L2224/13294 , H01L2224/133 , H01L2224/16227 , H01L2224/16237 , H01L2224/16238 , H01L2224/32225 , H01L2224/73204 , H01L2224/81005 , H01L2224/81192 , H01L2224/81203 , H01L2224/81224 , H01L2224/81424 , H01L2224/81439 , H01L2224/81444 , H01L2224/81447 , H01L2224/81464 , H01L2224/81815 , H01L2224/8191 , H01L2224/81911 , H01L2224/81913 , H01L2224/81914 , H01L2224/83005 , H01L2224/83104 , H01L2224/83192 , H01L2224/92 , H01L2224/9202 , H01L2224/92125 , H01L2224/97 , H01L2924/1421 , H01L2924/1433 , H01L2924/14335 , H01L2924/15311 , H01L2924/15331 , H01L2924/1815 , H01L2924/18161 , H01L2224/81 , H01L2224/83 , H01L2924/00014 , H01L2924/014 , H01L2924/00012 , H01L2221/68304 , H01L2221/68363 , H01L21/56 , H01L21/4853 , H01L21/76805 , H01L21/76832
摘要： 본발명의일 실시예는반도체디바이스및 그제조방법에관한것으로, 해결하고자하는기술적과제는통상의범핑장비를이용하여실리콘관통전극이없는인터포저를갖는반도체디바이스및 그제조방법을제공하는데있다. 이를위해본 발명은재배선층및 상기재배선층을덮는보호층을포함하는인터포저; 인터포저의보호층을관통하여재배선층에접속된반도체다이; 및, 반도체다이를몰딩하는수지를포함하고, 인터포저는보호층아래에제1시드층및 제1재배선층이순차적으로형성되도록구성되고, 제1시드층위에보호층을관통하는범프시드층이직접형성되고, 범프시드층위에반도체다이와접속되는마이크로범프패드가형성된반도체디바이스및 그제조방법을개시한다.
摘要翻译： 根据本发明的一个实施例，公开了一种半导体器件及其制造方法。 本发明的技术目的在于提供一种半导体器件及其制造方法，以使用正常的凸块设备，以便具有不具有通硅通孔（TSV）的插入件。 为此，半导体器件包括：插入器，包括再分配层和保护层以覆盖再分布层; 穿过插入件的保护层以连接到再分配层的半导体管芯; 以及模制半导体管芯的树脂。 中间层形成为在保护层的下方顺序地形成第一种子层和第一再分布层，在第一籽晶层上直接形成穿透保护层的凸起籽晶层，形成与半导体管芯连接的微凸块焊盘 在凸起种子层上。
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公开(公告)号：KR101620702B1
公开(公告)日：2016-05-12
申请号：KR1020140101481
申请日：2014-08-07
CPC分类号： H01L25/50 , H01L21/486 , H01L21/563 , H01L21/565 , H01L21/76802 , H01L21/76877 , H01L23/3121 , H01L23/481 , H01L23/49811 , H01L23/49816 , H01L23/49822 , H01L23/49827 , H01L23/49838 , H01L23/562 , H01L24/13 , H01L24/16 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/81 , H01L25/0657 , H01L25/105 , H01L2224/0401 , H01L2224/04042 , H01L2224/131 , H01L2224/13111 , H01L2224/13147 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73265 , H01L2224/81424 , H01L2224/81439 , H01L2224/81444 , H01L2224/81447 , H01L2224/81484 , H01L2224/81815 , H01L2224/81895 , H01L2225/0651 , H01L2225/06548 , H01L2225/06568 , H01L2225/1023 , H01L2225/1058 , H01L2924/00014 , H01L2924/12042 , H01L2924/1431 , H01L2924/1432 , H01L2924/1434 , H01L2924/15311 , H01L2924/15331 , H01L2924/157 , H01L2924/181 , H01L2924/1815 , H01L2924/18161 , H01L2924/3511 , H01L2924/37001 , H01L2924/00012 , H01L2924/014 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： 본발명개시의실시예들은반도체디바이스, 패키지및 반도체디바이스및 패키지를형성하는방법을포함한다. 실시예는반도체디바이스로서, 제 1 기판위의몰딩물질및 몰딩물질에제 1 폭을갖는제 1 개구부를포함한다. 반도체디바이스는몰딩물질에제 2 폭을갖는제 2 개구부를더 포함하고, 제 2 폭은제 1 폭보다크다. 제 1 커넥터가제 1 개구부에있고, 제 2 커넥터가제 2 개구부에있다.
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公开(公告)号：KR101579673B1
公开(公告)日：2015-12-22
申请号：KR1020140025630
申请日：2014-03-04
申请人： 앰코 테크놀로지 코리아 주식회사
IPC分类号： H01L23/28
CPC分类号： H01L23/562 , H01L21/486 , H01L21/56 , H01L21/561 , H01L21/563 , H01L21/6835 , H01L23/147 , H01L23/3135 , H01L23/5384 , H01L23/5385 , H01L25/0655 , H01L25/50 , H01L2221/68327 , H01L2221/6834 , H01L2224/13082 , H01L2224/131 , H01L2224/13147 , H01L2224/16227 , H01L2224/16235 , H01L2224/16237 , H01L2224/32225 , H01L2224/73204 , H01L2224/81439 , H01L2224/81444 , H01L2224/81447 , H01L2224/81455 , H01L2224/81801 , H01L2224/92125 , H01L2224/94 , H01L2224/97 , H01L2924/12042 , H01L2924/15311 , H01L2924/157 , H01L2924/15788 , H01L2924/1815 , H01L2924/18161 , H01L2924/19105 , H01L2924/3511 , H01L2224/81 , H01L2224/11 , H01L2924/014 , H01L2924/00 , H01L2924/00014
摘要： 본발명은반도체제조공정중 발생하는뒤틀림이나휨 현상(warpage)을방지할수 있는반도체패키지제조방법및 이를이용한반도체패키지를제공한다. 이를위해본 발명의일 실시예에따른반도체패키지제조방법은적어도 2개의반도체다이를준비하는단계(A), 인터포저를준비하는단계(B), 상기적어도 2개의반도체다이를상기인터포저상에본딩하는단계(C), 상기인터포저와적어도 2개의반도체다이사이로언더필을충진하는단계(D) 및상기적어도 2개의반도체다이사이의언더필의적어도일부를제거하는단계(E)를포함한다.
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公开(公告)号：KR101575172B1
公开(公告)日：2015-12-07
申请号：KR1020130136003
申请日：2013-11-11
IPC分类号： H01L21/60
CPC分类号： H05K1/0298 , H01L23/49822 , H01L24/13 , H01L24/81 , H01L2224/13007 , H01L2224/13022 , H01L2224/13082 , H01L2224/131 , H01L2224/13147 , H01L2224/16235 , H01L2224/16237 , H01L2224/16238 , H01L2224/81191 , H01L2224/81193 , H01L2224/81444 , H01L2224/81447 , H01L2224/81455 , H01L2224/81815 , H01L2924/12042 , H01L2924/15788 , H05K1/115 , H05K3/0082 , H05K3/108 , H05K3/282 , H05K3/4007 , H05K2201/0347 , H05K2201/0367 , H05K2201/10378 , H05K2201/10674 , H05K2201/10734 , H05K2203/1476 , H01L2924/00 , H01L2924/00014 , H01L2924/014
摘要： 본발명은, 땜납마스크와같이유전체에매립된비아필러를구비한외부층을갖는기판에칩을부착하는방법에관한것으로, 상기비아필러의단부는상기유전체와동등한높이이고, (o) 유기바니시를선택적으로제거하는단계와, (p) 상기비아필러의노출된단부에접촉하는땜납범프로종결된레그를갖는칩을위치설정하는단계와, (q) 상기땜납범프를용융하고상기외부비아의단부를땜납으로습윤하도록열을인가하는단계를포함한다.
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公开(公告)号：KR1020150120535A
公开(公告)日：2015-10-27
申请号：KR1020157029682
申请日：2013-04-18
申请人： 센주긴조쿠고교 가부시키가이샤
CPC分类号： B23K35/262 , B23K1/0016 , B23K35/264 , C22C12/00 , C22C13/02 , H01L24/11 , H01L24/13 , H01L24/16 , H01L2224/1132 , H01L2224/11334 , H01L2224/1134 , H01L2224/13111 , H01L2224/13113 , H01L2224/13147 , H01L2224/13155 , H01L2224/16225 , H01L2224/16227 , H01L2224/81444 , H01L2224/81447 , H01L2224/81455 , H01L2924/01028 , H01L2924/01029 , H01L2924/0105 , H01L2924/01083 , H01L2924/01103 , H01L2924/01108 , H01L2924/01109 , H01L2924/01322 , H01L2924/0134 , H01L2924/014 , H01L2924/14 , H01L2924/15701 , H05K3/3463 , H01L2924/01015 , H01L2924/01032 , H01L2924/00014 , H01L2924/00
摘要： 저융점에서연성이우수하고인장강도가높고, 접합계면의 P 리치층의생성을억제하여높은전단강도를가짐으로써, 기판의변형을억제하여우수한접속신뢰성을갖는 Sn-Bi-Cu-Ni계무연땜납합금을제공한다. 전극의 Cu나 Ni의확산을억제함과함께땜납합금의연신율이나습윤성을확보하기위해, 질량%로, Bi: 31∼59%, Cu: 0.3∼1.0%, Ni: 0.01∼0.06%, 잔부 Sn을포함하는합금조성을갖는다.
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公开(公告)号：KR1020140124725A
公开(公告)日：2014-10-27
申请号：KR1020140044242
申请日：2014-04-14
申请人： 르네사스 일렉트로닉스 가부시키가이샤
IPC分类号： H01L21/60
CPC分类号： H01L24/81 , H01L21/561 , H01L21/563 , H01L23/145 , H01L23/15 , H01L23/49822 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/17 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/97 , H01L25/0657 , H01L2224/04042 , H01L2224/1134 , H01L2224/11462 , H01L2224/11464 , H01L2224/11472 , H01L2224/13014 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/1403 , H01L2224/14104 , H01L2224/16225 , H01L2224/17051 , H01L2224/2732 , H01L2224/27334 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/33181 , H01L2224/45144 , H01L2224/45147 , H01L2224/48111 , H01L2224/48227 , H01L2224/48465 , H01L2224/73204 , H01L2224/73257 , H01L2224/73265 , H01L2224/81191 , H01L2224/81203 , H01L2224/814 , H01L2224/81444 , H01L2224/81447 , H01L2224/83192 , H01L2224/97 , H01L2924/15311 , H01L2924/15313 , H01L2924/181 , H01L2924/351 , H01L2924/3512 , H05K1/036 , H05K1/0366 , H05K3/0052 , H05K3/326 , H05K3/3436 , H05K2201/0187 , H05K2201/0191 , H05K2201/0195 , H05K2201/10734 , H01L2924/00012 , H01L2224/81 , H01L2924/00 , H01L2924/00014 , H01L2924/01047 , H01L2924/014 , H01L2924/0665
摘要： The reliability of a semiconductor device is improved. In a wiring substrate (2) of a BGA, a plurality of bonding leads (2m) is disposed on an insulation layer (2d). The insulation layer (2d) includes a prepreg (2da) having a glass cloth (2h) and a resin layer (2db) having no glass cloth (2h). The resin layer (2db) is stacked on the prepreg (2da). Thus, the plurality of bonding leads (2m) are directly disposed on the soft resin layer (2db) and are supported by the soft resin layer (2db). When each of the plurality of bonding leads (2m) is pressurized by a load when a flip-chip is mounted, the resin layer (2db) sinks, thereby reducing the stress applied to a semiconductor chip.
摘要翻译： 提高了半导体器件的可靠性。 在BGA的布线基板（2）中，在绝缘层（2d）上设置有多个接合引线（2m）。 绝缘层（2d）包括具有玻璃布（2h）的预浸料（2da）和不具有玻璃布（2h）的树脂层（2db）。 树脂层（2db）堆叠在预浸料（2da）上。 因此，多个接合引线（2m）直接设置在软树脂层（2db）上并被软树脂层（2db）支撑。 当安装倒装芯片时，通过负载对多个接合引线（2m）中的每一个进行加压时，树脂层（2db）下沉，从而降低施加到半导体芯片的应力。
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9.发明公开
公开(公告)号：KR1020140104472A
公开(公告)日：2014-08-28
申请号：KR1020147018593
申请日：2012-12-07
申请人： 데쿠세리아루즈 가부시키가이샤
发明人： 고지마,료지
IPC分类号： H01L21/60
CPC分类号： H01L24/30 , B28D5/0064 , B28D5/022 , H01L21/6835 , H01L21/6836 , H01L21/78 , H01L23/544 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/92 , H01L24/94 , H01L2221/68327 , H01L2223/54426 , H01L2223/54453 , H01L2224/1134 , H01L2224/1146 , H01L2224/13082 , H01L2224/131 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/16225 , H01L2224/16227 , H01L2224/16238 , H01L2224/29005 , H01L2224/29082 , H01L2224/2919 , H01L2224/2929 , H01L2224/29387 , H01L2224/2939 , H01L2224/29393 , H01L2224/3001 , H01L2224/30505 , H01L2224/3201 , H01L2224/32225 , H01L2224/73104 , H01L2224/81191 , H01L2224/81203 , H01L2224/814 , H01L2224/81444 , H01L2224/81903 , H01L2224/83191 , H01L2224/83203 , H01L2224/8385 , H01L2224/83851 , H01L2224/83855 , H01L2224/83862 , H01L2224/83874 , H01L2224/92 , H01L2224/9211 , H01L2224/94 , H01L2924/07802 , H01L2924/15788 , H01L2924/00014 , H01L2924/014 , H01L2224/11 , H01L2224/27 , H01L2224/81 , H01L2224/83 , H01L2924/00 , H01L2924/00012 , H01L2924/05442 , H01L2924/01047 , H01L2924/206
摘要： 본 발명은, 우수한 도통 신뢰성 및 접속 신뢰성을 발휘하는 것이 가능한 접속 방법, 및 이 접속 방법에 의해 접속되어 이루어지는 접속 구조체를 제공하는 것을 목적으로 한다. 절연성 접착 필름(20)은 절연성 접착제 조성물(21a)에 필러(21b)를 함유하는 제1 절연성 접착제층(21)과, 절연성 접착제 조성물(22a)에 필러를 함유하지 않은 제2 절연성 접착제층(22)이 적층되어 이루어진다. IC칩(10)의 범프의 높이(H), 제1 절연성 접착제층(21)의 두께(Tf), 제2 절연성 접착제층(22)의 두께(Tn)에 있어서, H/2
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公开(公告)号：KR1020140099806A
公开(公告)日：2014-08-13
申请号：KR1020130054498
申请日：2013-05-14
CPC分类号： H01L21/56 , H01L21/486 , H01L21/563 , H01L21/76898 , H01L23/147 , H01L23/3135 , H01L23/3185 , H01L23/49811 , H01L23/49827 , H01L23/5389 , H01L24/05 , H01L24/11 , H01L24/16 , H01L24/19 , H01L24/20 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/85 , H01L25/0657 , H01L25/50 , H01L2224/0401 , H01L2224/04105 , H01L2224/12105 , H01L2224/131 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13184 , H01L2224/16225 , H01L2224/16235 , H01L2224/2101 , H01L2224/214 , H01L2224/215 , H01L2224/2919 , H01L2224/32225 , H01L2224/48091 , H01L2224/73204 , H01L2224/73265 , H01L2224/81193 , H01L2224/81424 , H01L2224/81444 , H01L2224/81447 , H01L2224/81815 , H01L2224/81895 , H01L2224/82101 , H01L2224/83104 , H01L2224/85 , H01L2225/06513 , H01L2924/00014 , H01L2924/01322 , H01L2924/12042 , H01L2924/1431 , H01L2924/1434 , H01L2924/15192 , H01L2924/1531 , H01L2924/181 , H01L2924/18161 , H01L2924/19107 , H01L2924/00012 , H01L2224/16145 , H01L2224/32145 , H01L2924/014 , H01L2924/01029 , H01L2924/01013 , H01L2924/01047 , H01L2924/01079 , H01L2924/01074 , H01L2924/01028 , H01L2924/00 , H01L2224/45099
摘要： A semiconductor device includes a first active surface, a fist die which includes a first back surface which faces the first active surface, a second active surface, a second die which includes a second back surface which faces the second active surface, and an interposer. The first active surface of the first die is electrically connected to the first surface of the interposer. The second active surface of the second die is electrically connected to the second surface of the interposer. Also, the semiconductor device includes a fist connector on the interposer, a first sealing material which surrounds the second die, and a via which electrically connects the first connector and the interposer. The first sealing material has a first surface on the interposer. The height of the first end part of the via is practically equal to the height of the first surface of the first sealing material.
摘要翻译： 半导体器件包括第一有源表面，第一管芯，其包括面向第一有源表面的第一后表面，第二有源表面，第二管芯，其包括面向第二有源表面的第二后表面，以及插入器。 第一管芯的第一有源表面电连接到插入器的第一表面。 第二管芯的第二有源表面电连接到插入器的第二表面。 此外，半导体器件包括插入器上的第一连接器，围绕第二管芯的第一密封材料和电连接第一连接器和插入件的通孔。 第一密封材料在插入件上具有第一表面。 通孔的第一端部的高度实际上等于第一密封材料的第一表面的高度。
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