Abstract:
The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.
Abstract:
Disclosed is a method for producing a plurality of semiconductor chips (10). A composite (1), which comprises a carrier (4) and a semiconductor layer sequence (2, 3), is provided. Separating trenches (17) are formed in the semiconductor layer sequence (2, 3) along an isolation pattern (16). A filling layer (11) limiting the semiconductor layer sequence (2, 3) toward the separating trenches (17) is applied to a side of the semiconductor layer sequence (2, 3) facing away from the carrier (4). Furthermore, a metal layer (10) adjacent to the filling layer (11) is applied in the separating trenches (17). The semiconductor chips (20) are isolated by removing the metal layer (10) adjacent to the filling layer (11) in the separating trenches (17). Each isolated semiconductor chip (20) has one part of the semiconductor layer sequence (2, 3), and of the filling layer (11). Also disclosed is a semiconductor chip (10).
Abstract:
A method of producing an optoelectronic component includes providing a carrier having a carrier surface, a first lateral section of the carrier surface being raised relative to a second lateral section of the carrier surface; arranging an optoelectronic semiconductor chip having a first surface and a second surface on the carrier surface, wherein the first surface faces toward the carrier surface; and forming a molded body having an upper side facing toward the carrier surface and a lower side opposite the upper side, the semiconductor chip being at least partially embedded in the molded body.
Abstract:
An optoelectronic semiconductor component including an optoelectronic semiconductor chip having a first surface, wherein the first surface is a radiation emission surface of the optoelectronic semiconductor chip, the semiconductor chip is embedded in a mold body, the first surface is elevated with respect to a top side of the mold body, and a reflective layer is arranged on the top side of the mold body.
Abstract:
An optoelectronic module (202, 204, 206, 208, 210, 212, 214, 216, 218, 220, 222, 224, 226, 228, 230, 232, 234) comprises a carrier (102), at which and/or in which are arranged at least two semiconductor chips (104, 104a1, 104a2, 104b; 106, 106a1, 106a2, 106b, 106c) for emitting electromagnetic radiation (108a, 108b). An emission unit (110) for emitting electromagnetic radiation (109) from the optoelectronic module (202, 204, 206, 208, 210, 212, 214, 216, 218, 220, 222, 224, 226, 228, 230, 232, 234) is arranged on or in the carrier (102). At least one of the semiconductor chips (106, 106a1, 106a2, 106b, 106c) is spaced apart from the emission unit (110). A waveguide (112) guides the electromagnetic radiation (108a) of the at least one spaced-apart semiconductor chip (106, 106a1, 106a2, 106b, 106c) to the emission unit (110). The emission unit (110) has a coupling-out structure (114, 114a, 114b, 114c) for coupling out the electromagnetic radiation (108a) from the waveguide (112).
Abstract:
A method can be used for for producing an optoelectronic component. An optoelectronic semiconductor chip has a front face and a rear face. A sacrificial layer is applied to the rear face. A molded body is formed the optoelectronic semiconductor chip being at least partially embedded in the molded body. The sacrificial layer is removed.
Abstract:
An optoelectronic semiconductor component and a method for making an optoelectronic semiconductor component are disclosed. In an embodiment the component includes a carrier including at least one conversion-medium body and a potting body, the potting body surrounding the conversion-medium body at least in places, as seen in plan view, electrical contact structures fitted at least indirectly to the carrier and a plurality of optoelectronic semiconductor chips fitted to a main face of the carrier, the optoelectronic semiconductor chips configured to generate radiation, wherein the conversion-medium body is shaped as a plate, wherein the semiconductor chips are directly mechanically connected to the conversion-medium body, and wherein the conversion-medium body is free of cutouts for the electrical contact structures and is not penetrated by the electrical contact structure.
Abstract:
An optoelectronic module has at least one semiconductor chip for emitting electromagnetic radiation. The semiconductor chip has a layer having a first conductivity, a layer having a second conductivity, a radiation surface and a contact surface which lies opposite the radiation surface. A contact is attached to the radiation surface. A frame made of a potting compound laterally encloses the semiconductor chip in at least some regions such that the radiation surface and the contact surface are substantially free of the potting compound. A first contact structure is arranged in at least some regions on the frame and in at least some regions on the contact surface. A second contact structure is arranged in at least some regions on the frame and in at least some regions on the contact of the radiation surface.
Abstract:
The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.
Abstract:
The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.