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公开(公告)号：US20220216076A1
公开(公告)日：2022-07-07
申请号：US17604977
申请日：2019-07-22
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Hubert Halbritter , Alexander Pfeuffer , Mikko Peraelae
IPC: H01L21/67 , H01L21/683
Abstract: In an embodiment an adhesive transfer stamp for transferring semiconductor chips includes a volume region including an electrically insulating material, at least one adhesive surface configured to receive a semiconductor chip and an electrically conductive element configured to electrically conductively connected to a ground conductor during operation and to dissipate electrical charges from the semiconductor chip to the ground conductor, wherein the volume region is embodied as a solid body, and wherein the volume region has at least one stepped structure.
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公开(公告)号：US09214600B2
公开(公告)日：2015-12-15
申请号：US14382286
申请日：2013-02-20
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Martin Mandl , Martin Straβburg , Christopher Kölper , Alexander Pfeuffer , Patrick Rode , Johannes Ledig , Richard Neumann , Andreas Waag
CPC classification number: H01L33/08 , H01L33/16 , H01L33/18 , H01L33/24 , H01L33/385 , H01L33/42 , H01L33/50 , H01L33/62 , H01L2933/0016
Abstract: An optoelectronic semiconductor chip includes a number active regions that are arranged at a distance from each other and a substrate that is arranged on an underside of the active regions. One of the active regions has a main extension direction. The active region has a core region that is formed using a first semiconductor material. The active region has an active layer that covers the core region at least in directions perpendicular to the main extension direction of the active region. The active region has a cover layer that is formed using a second semiconductor material and covers the active layer at least in directions perpendicular to the main extension direction of the active region.
Abstract translation: 光电子半导体芯片包括彼此间隔一定距离设置的多个有源区和布置在有源区的下侧的衬底。 其中一个活跃区域有一个主要的延伸方向。 有源区具有使用第一半导体材料形成的芯区。 有源区域具有至少在垂直于有源区域的主延伸方向的方向上覆盖芯区域的有源层。 有源区具有使用第二半导体材料形成的覆盖层，并且至少在垂直于有源区的主延伸方向的方向上覆盖有源层。
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公开(公告)号：US12199134B2
公开(公告)日：2025-01-14
申请号：US17515338
申请日：2021-10-29
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Martin Behringer , Andreas Biebersdorf , Ruth Boss , Erwin Lang , Tobias Meyer , Alexander Pfeuffer , Marc Philippens , Julia Stolz , Tansen Varghese , Sebastian Wittmann , Siegfried Herrmann , Berthold Hahn , Bruno Jentzsch , Korbinian Perzlmaier , Peter Stauss , Petrus Sundgren , Jens Mueller , Kerstin Neveling , Frank Singer , Christian Mueller
Abstract: The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.
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4.发明授权公开(公告)号：US09806225B2
公开(公告)日：2017-10-31
申请号：US15309260
申请日：2015-05-19
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Alexander Pfeuffer
IPC: H01L33/00 , H01L33/32 , H01L33/38 , H01L33/40 , H01L31/02 , H01L31/0224 , H01L31/0232 , H01L31/0236 , H01L31/0304 , H01L31/18 , H01L33/22 , H01L33/46 , H01L33/62 , H01S5/02 , H01S5/028 , H01S5/227 , H01S5/32 , H01S5/323 , H01L33/44
CPC classification number: H01L33/0079 , H01L31/02005 , H01L31/022408 , H01L31/02327 , H01L31/02366 , H01L31/03044 , H01L31/1892 , H01L33/22 , H01L33/32 , H01L33/382 , H01L33/40 , H01L33/405 , H01L33/44 , H01L33/46 , H01L33/62 , H01L2933/0016 , H01L2933/0025 , H01L2933/0066 , H01S5/0217 , H01S5/028 , H01S5/2275 , H01S5/3202 , H01S5/32341
Abstract: A method of producing an optoelectronic semiconductor chip includes providing a growth substrate and a semiconductor layer sequence grown on the growth substrate with a main extension plane including a p-conductive layer, an active zone and an n-conductive layer, removing the semiconductor layer sequence in regions to form at least one aperture extending through the p-conductive layer and the active zone into the n-conductive layer of the semiconductor layer sequence, depositing a protective layer on a side of the semiconductor layer sequence facing away from the growth substrate, depositing an aluminum layer containing aluminum across the entire surface on a side of the semiconductor layer sequence facing away from the growth substrate, removing the growth substrate, and forming a mesa by removing the semiconductor layer sequence at the regions of the protective layer, wherein the protective layer is subsequently freely externally accessible at least in places.
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5.发明授权Method for producing a connection region of an optoelectronic semiconductor chip 有权光电子半导体芯片的连接区域的制造方法公开(公告)号：US09461211B2
公开(公告)日：2016-10-04
申请号：US14646704
申请日：2013-10-28
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Alexander Pfeuffer
CPC classification number: H01L33/40 , H01L33/14 , H01L33/382 , H01L33/46 , H01L2924/0002 , H01L2933/0016 , H01L2933/0025 , H01L2924/00
Abstract: The invention relates to a method for producing a connection region (70) of an optoelectronic semiconductor chip (100), comprising the following steps: providing an optoelectronic semiconductor chip (100), forming or exposing a seed layer (6) on an outer surface (100a) of the optoelectronic semiconductor chip (100), and depositing a contact layer sequence (7) on the seed layer (6) without current, wherein the seed layer (6) is formed comprising a metal that enables nickel to be deposited on the seed layer (6) without current, the contact layer sequence (7) comprises a nickel layer (71) as a first layer facing the seed layer (6), and the contact layer sequence (7) has a contact surface (7a) on the side of the contact layer sequence facing away from the seed layer (6), by means of which contact surface the optoelectronic semiconductor chip (100) can be electrically contacted.
Abstract translation: 本发明涉及一种用于制造光电半导体芯片（100）的连接区域（70）的方法，包括以下步骤：提供光电半导体芯片（100），在外表面上形成或暴露种子层（6） （100）的所述接触层序列（100a），以及在所述种子层（6）上没有电流沉积接触层序列（7），其中形成所述种子层（6），其包括使镍沉积在其上的金属 所述接触层序列（7）包括作为面向种子层（6）的第一层的镍层（71），并且所述接触层序列（7）具有接触表面（7a），所述接触层序列 在接触层序列背离种子层（6）的一侧上，通过该接触表面，光电子半导体芯片（100）可以电接触。
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Patent Agency Ranking
公开(公告)号：US09865784B2
公开(公告)日：2018-01-09
申请号：US15117739
申请日：2015-02-09
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Alexander Pfeuffer
CPC classification number: H01L33/60 , H01L33/0079 , H01L33/405 , H01L33/44 , H01L2933/0016 , H01L2933/0058 , Y02E10/52
Abstract: An optoelectronic component includes a first layer sequence being designed to emit or to detect electromagnetic radiation, and a second layer sequence being arranged at a first side of the first layer sequence and designed to reflect the electromagnetic radiation emitted or to be detected by the first layer sequence. The second layer sequence has a first reflector layer, a second reflector layer and an adhesion promoting layer. The first reflector layer contains a first material and is arranged at a first side of the second layer sequence facing the first side of the first layer sequence, the adhesion promoting layer contains a second material and is arranged at a second side of the second layer sequence facing away from the first side of the first layer sequence, and the second reflector layer contains the first material and is arranged between the first reflector layer and the adhesion promoting layer.
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公开(公告)号：US20150021636A1
公开(公告)日：2015-01-22
申请号：US14382286
申请日：2013-02-20
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Martin Mandl , Martin Straßburg , Christopher Kölper , Alexander Pfeuffer , Patrick Rode , Johannes Ledig , Richard Neumann , Andreas Waag
CPC classification number: H01L33/08 , H01L33/16 , H01L33/18 , H01L33/24 , H01L33/385 , H01L33/42 , H01L33/50 , H01L33/62 , H01L2933/0016
Abstract: An optoelectronic semiconductor chip includes a number active regions that are arranged at a distance from each other and a substrate that is arranged on an underside of the active regions. One of the active regions has a main extension direction. The active region has a core region that is formed using a first semiconductor material. The active region has an active layer that covers the core region at least in directions perpendicular to the main extension direction of the active region. The active region has a cover layer that is formed using a second semiconductor material and covers the active layer at least in directions perpendicular to the main extension direction of the active region.
Abstract translation: 光电子半导体芯片包括彼此间隔一定距离设置的多个有源区和布置在有源区的下侧的衬底。 其中一个活跃区域有一个主要的延伸方向。 有源区具有使用第一半导体材料形成的芯区。 有源区域具有至少在垂直于有源区域的主延伸方向的方向上覆盖芯区域的有源层。 有源区具有使用第二半导体材料形成的覆盖层，并且至少在垂直于有源区的主延伸方向的方向上覆盖有源层。
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公开(公告)号：US12059881B2
公开(公告)日：2024-08-13
申请号：US17766622
申请日：2020-10-05
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Alexander Pfeuffer , Korbinian Perzlmaier
IPC: H01L21/683 , B32B43/00
CPC classification number: B32B43/006 , H01L21/6835 , H01L2221/68304 , H01L2221/68318 , H01L2221/68322 , H01L2221/68354
Abstract: In an embodiment a component assembly includes a plurality of components, a carrier, wherein the components are secured on the carrier by a connecting layer, wherein, for each component, the connecting layer forms at least one supporting structure at which the connecting layer is adjacent to the component, and a sacrificial layer arranged regionally between the components and the connecting layer, wherein one portion of the components is assigned to a first group, wherein a further portion of the components is assigned to a second group, and wherein the components of the first group are different than the components of the second group in respect of a coverage with the sacrificial layer.
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公开(公告)号：US09761772B2
公开(公告)日：2017-09-12
申请号：US14423066
申请日：2013-08-22
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Alexander Pfeuffer
CPC classification number: H01L33/60 , H01L33/005 , H01L33/382 , H01L33/405 , H01L33/44 , H01L33/54 , H01L33/62 , H01L2933/0016 , H01L2933/0025 , H01L2933/0033 , H01L2933/005 , H01L2933/0058 , H01L2933/0066
Abstract: A method for producing an optoelectronic semiconductor chip is disclosed. In some embodiment the method includes arranging a metallic mirror layer on a top side of a semiconductor layer sequence, arranging a mirror protection layer at least on exposed lateral surfaces of the mirror layer in a self-aligning manner, wherein the mirror layer has openings toward the semiconductor layer sequence, and wherein the openings are framed in lateral directions by the mirror protection layer and partially removing the semiconductor layer sequence in a region of the openings of the mirror layer.
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10.发明申请METHOD FOR PRODUCING A CONNECTION REGION OF AN OPTOELECTRONIC SEMICONDUCTOR CHIP 有权用于生产光电半导体芯片的连接区域的方法公开(公告)号：US20150295137A1
公开(公告)日：2015-10-15
申请号：US14646704
申请日：2013-10-28
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Alexander Pfeuffer
CPC classification number: H01L33/40 , H01L33/14 , H01L33/382 , H01L33/46 , H01L2924/0002 , H01L2933/0016 , H01L2933/0025 , H01L2924/00
Abstract: The invention relates to a method for producing a connection region (70) of an optoelectronic semiconductor chip (100), comprising the following steps: providing an optoelectronic semiconductor chip (100), forming or exposing a seed layer (6) on an outer surface (100a) of the optoelectronic semiconductor chip (100), and depositing a contact layer sequence (7) on the seed layer (6) without current, wherein the seed layer (6) is formed comprising a metal that enables nickel to be deposited on the seed layer (6) without current, the contact layer sequence (7) comprises a nickel layer (71) as a first layer facing the seed layer (6), and the contact layer sequence (7) has a contact surface (7a) on the side of the contact layer sequence facing away from the seed layer (6), by means of which contact surface the optoelectronic semiconductor chip (100) can be electrically contacted.
Abstract translation: 本发明涉及一种用于制造光电半导体芯片（100）的连接区域（70）的方法，包括以下步骤：提供光电半导体芯片（100），在外表面上形成或暴露种子层（6） （100）的所述接触层序列（100a），以及在所述种子层（6）上没有电流沉积接触层序列（7），其中形成所述种子层（6），其包括使镍沉积在其上的金属 所述接触层序列（7）包括作为面向种子层（6）的第一层的镍层（71），并且所述接触层序列（7）具有接触表面（7a），所述接触层序列 在接触层序列背离种子层（6）的一侧上，通过该接触表面，光电子半导体芯片（100）可以电接触。
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