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公开(公告)号:US20230079686A1
公开(公告)日:2023-03-16
申请号:US17717619
申请日:2022-04-11
Applicant: Samsung Electronics Co., Ltd.
Inventor: Young Hun CHEONG , Young Lyong KIM , Cheol Soo HAN
Abstract: Provided is a semiconductor package with improved reliability. The semiconductor package includes: a plurality of connection terminals on a first surface of the semiconductor device; a protection member on the first surface of the semiconductor device and partially covers side surfaces of the plurality of connection terminals such that the protective member exposes lower surfaces of the plurality of connection terminals; and a mold member that covers a side surface of the semiconductor device and a portion of the protection member such that the mold member does not cover the lower surfaces of the plurality of connection terminals.
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公开(公告)号:US20220020656A1
公开(公告)日:2022-01-20
申请号:US17185116
申请日:2021-02-25
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sanghoon JUNG , Young Lyong KIM , Cheolsoo HAN
IPC: H01L23/31 , H01L23/498 , H01L23/00 , H01L21/56 , H01L25/18
Abstract: Disclosed is a semiconductor package comprising a lower substrate including a conductive line; a first semiconductor chip on the lower substrate; an under-fill layer between the first semiconductor chip and the lower substrate, the under-fill layer including a central part below the first semiconductor chip and an edge part isolated from direct contact with the central part in a first direction parallel to a top surface of the lower substrate, and a recess region between the central part and the edge part. The recess region may be defined by a sidewall of the central part, a sidewall of the edge part, and a top surface of the conductive line in the lower substrate.
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公开(公告)号:US20190206841A1
公开(公告)日:2019-07-04
申请号:US16106521
申请日:2018-08-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Young Lyong KIM , Seung Duk BAEK
IPC: H01L25/065 , H01L23/00 , H01L23/31
CPC classification number: H01L25/0657 , H01L21/561 , H01L23/291 , H01L23/293 , H01L23/3128 , H01L23/3135 , H01L23/3171 , H01L23/3192 , H01L23/481 , H01L23/5383 , H01L24/05 , H01L24/09 , H01L24/13 , H01L24/16 , H01L24/81 , H01L24/94 , H01L25/0652 , H01L25/105 , H01L25/50 , H01L2224/0401 , H01L2224/05022 , H01L2224/05124 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05169 , H01L2224/05184 , H01L2224/05567 , H01L2224/05568 , H01L2224/0557 , H01L2224/05573 , H01L2224/0558 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05666 , H01L2224/05669 , H01L2224/05671 , H01L2224/05684 , H01L2224/06181 , H01L2224/08145 , H01L2224/09181 , H01L2224/13007 , H01L2224/13017 , H01L2224/13021 , H01L2224/13022 , H01L2224/13082 , H01L2224/13109 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13118 , H01L2224/1312 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13157 , H01L2224/13164 , H01L2224/13169 , H01L2224/16146 , H01L2224/16147 , H01L2224/16148 , H01L2224/16237 , H01L2224/17181 , H01L2224/73204 , H01L2224/81005 , H01L2224/81191 , H01L2224/94 , H01L2224/97 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2924/00014 , H01L2924/014 , H01L2924/013 , H01L2924/01082 , H01L2924/01047 , H01L2924/01079 , H01L2924/01029 , H01L2924/01083 , H01L2924/0103 , H01L2924/01074 , H01L2924/01023 , H01L2224/03 , H01L2224/11 , H01L2224/81
Abstract: A semiconductor package includes a first semiconductor chip having a first chip substrate, the first chip substrate having a first upper surface and a first lower surface opposite to each other, a first through-silicon via (TSV), a lower connection pad and a first lower passivation layer on the first lower surface of the first chip substrate, the first lower passivation layer exposing a portion of the lower connection pad, an upper connection pad and a first upper passivation layer on the first upper surface of the first chip substrate, the first upper passivation layer including a first upper inorganic material layer, and a second semiconductor chip connected to the first semiconductor chip, the second semiconductor chip including a second TSV, wherein the first lower passivation layer has a stacked structure of a first lower inorganic material layer and a lower organic material layer.
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公开(公告)号:US20190096869A1
公开(公告)日:2019-03-28
申请号:US16201021
申请日:2018-11-27
Applicant: Samsung Electronics Co., Ltd.
Inventor: Young Lyong KIM , Jin-woo PARK , CHOONGBIN YIM , Younji MIN
IPC: H01L25/00 , H01L25/10 , H01L23/538 , H01L23/31 , H01L23/29 , H01L23/00 , H01L21/56 , H01L25/065
Abstract: Provided are a semiconductor package and a method of manufacturing the same. The semiconductor package comprises a substrate, a semiconductor chip on the substrate, an interconnect substrate spaced apart from the semiconductor chip on the substrate and including a conductive member therein, a solder ball on the interconnect substrate and electrically connected to the conductive member, a polymer layer on the interconnect substrate and the semiconductor chip and including an opening through which the solder ball is exposed, and polymer particles in the solder ball and including the same material as the polymer layer.
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公开(公告)号:US20250046745A1
公开(公告)日:2025-02-06
申请号:US18595216
申请日:2024-03-04
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Young Lyong KIM
IPC: H01L23/00 , H01L23/367 , H01L23/498 , H01L25/065
Abstract: A semiconductor package includes first and second chips horizontally spaced apart from each other on a substrate. An under-fill layer is interposed between the substrate and the first and second chips. An upper mold layer is disposed on the substrate to cover side surfaces of the first and second chips. The second chip includes vertically-stacked sub-chips and a chip mold layer covering side surfaces of the sub-chips. The under-fill layer extends into a space between lower side surfaces of the chip mold layer and the first chip. The upper mold layer extends into a space between upper side surfaces of the chip mold layer and the first chip to cover an uppermost surface of the under-fill layer. The upper side surface of the chip mold layer is recessed inward from the lower side surface of the chip mold layer.
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公开(公告)号:US20240136331A1
公开(公告)日:2024-04-25
申请号:US18483211
申请日:2023-10-08
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hyun Soo CHUNG , Young Lyong KIM
IPC: H01L25/065 , H01L23/00 , H01L23/31 , H01L23/498 , H10B80/00
CPC classification number: H01L25/0657 , H01L23/3107 , H01L23/49822 , H01L24/16 , H01L25/0652 , H01L25/0655 , H10B80/00 , H01L2224/16148 , H01L2224/16227 , H01L2224/16238 , H01L2225/06513 , H01L2225/06517 , H01L2225/0652 , H01L2225/06548 , H01L2924/1431 , H01L2924/1435
Abstract: A semiconductor package may include a circuit board, an interposer structure on the circuit board, a mold layer, and a first semiconductor chip and a second semiconductor chip spaced apart from each other in a first direction on a center region of the interposer structure and electrically connected to the interposer structure. The interposer structure may include a plurality of trenches in an edge region of the interposer structure and extending through the interposer structure. The mold layer may be in the plurality of trenches and may wrap the first and second semiconductor chips. The mold layer may include a penetrating portion in the plurality of trenches and a stack portion on the interposer structure. A bottom surface of the penetrating portion of the mold layer may be on a same plane as a bottom surface of the interposer structure.
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公开(公告)号:US20210183821A1
公开(公告)日:2021-06-17
申请号:US17183786
申请日:2021-02-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Taehyeong KIM , Young Lyong KIM , Geol NAM
IPC: H01L25/065 , H01L23/00 , H01L23/31 , H01L21/56
Abstract: Disclosed are semiconductor packages and methods of manufacturing the same. The method of manufacturing a semiconductor package may include providing a carrier substrate having a trench formed on a first top surface of the carrier substrate, providing a first semiconductor chip on the carrier substrate, mounting at least one second semiconductor chip on a second top surface of the first semiconductor chip, coating a mold member to surround a first lateral surface of the first semiconductor chip and a second lateral surface of the at least one second semiconductor chip, and curing the mold member to form a mold layer. The trench may be provided along a first edge of the first semiconductor chip. The mold member may cover a second edge of a bottom surface the first semiconductor chip.
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公开(公告)号:US20240234376A9
公开(公告)日:2024-07-11
申请号:US18483211
申请日:2023-10-09
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hyun Soo CHUNG , Young Lyong KIM
IPC: H01L25/065 , H01L23/00 , H01L23/31 , H01L23/498 , H10B80/00
CPC classification number: H01L25/0657 , H01L23/3107 , H01L23/49822 , H01L24/16 , H01L25/0652 , H01L25/0655 , H10B80/00 , H01L2224/16148 , H01L2224/16227 , H01L2224/16238 , H01L2225/06513 , H01L2225/06517 , H01L2225/0652 , H01L2225/06548 , H01L2924/1431 , H01L2924/1435
Abstract: A semiconductor package may include a circuit board, an interposer structure on the circuit board, a mold layer, and a first semiconductor chip and a second semiconductor chip spaced apart from each other in a first direction on a center region of the interposer structure and electrically connected to the interposer structure. The interposer structure may include a plurality of trenches in an edge region of the interposer structure and extending through the interposer structure. The mold layer may be in the plurality of trenches and may wrap the first and second semiconductor chips. The mold layer may include a penetrating portion in the plurality of trenches and a stack portion on the interposer structure. A bottom surface of the penetrating portion of the mold layer may be on a same plane as a bottom surface of the interposer structure.
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公开(公告)号:US20240222230A1
公开(公告)日:2024-07-04
申请号:US18353313
申请日:2023-07-17
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hyunsoo CHUNG , Dae-Woo KIM , Young Lyong KIM , Inhyo HWANG
IPC: H01L23/48 , H01L21/48 , H01L23/29 , H01L23/538
CPC classification number: H01L23/481 , H01L21/486 , H01L23/293 , H01L23/5384
Abstract: A semiconductor package according to at least one embodiment may include: a first chiplet and a second chiplet disposed side by side with each other, wherein each of the first chiplet and the second comprises a substrate including an active side and a back side opposite to the active side; a back side power distribution network (BSPDN) in the back side of the substrate; and a third chiplet electrically coupling the first chiplet and the second chiplet to each other above the first chiplet and the second chiplet; and a fourth chiplet and a fifth chiplet disposed side by side with the third chiplet.
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公开(公告)号:US20190013272A1
公开(公告)日:2019-01-10
申请号:US15870910
申请日:2018-01-13
Applicant: Samsung Electronics Co., Ltd.
Inventor: Geol NAM , Young Lyong KIM
IPC: H01L23/538 , H01L25/065
CPC classification number: H01L23/5385 , H01L23/5384 , H01L23/5386 , H01L25/0657 , H01L2225/06513 , H01L2225/06517 , H01L2225/06544
Abstract: A semiconductor package is provided including a package substrate, a first semiconductor chip on the substrate, with a first surface and a second surface opposite to each other; a plurality of first connection terminals disposed on the first surface contacting an upper surface of the substrate; a second semiconductor chip disposed on the second surface, with a third surface and a fourth surface opposite to each other; a plurality of second connection terminals disposed on the third surface contacting the second surface, wherein an absolute value between a first area, the sum of areas in which the plurality of first connection terminals contact the upper surface of the package substrate, and a second area, the sum of areas in which the plurality of second connection terminals contact the second surface of the first semiconductor chip, is equal to or less than about 0.3 of the first area.
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