-
公开(公告)号:US10036544B1
公开(公告)日:2018-07-31
申请号:US13945763
申请日:2013-07-18
Applicant: SORAA, INC.
Inventor: Frank Tin Chung Shum
IPC: F21V29/00
CPC classification number: F21V29/22 , F21K9/233 , F21V23/006 , F21V29/70 , F21V29/74 , F21V29/773 , F21Y2115/10
Abstract: Illumination sources including a light generation portion comprising an LED assembly configured to output light at a first intensity while generating a first quantity of heat per unit time are disclosed. The heat dissipation portion comprises an MR-16 form factor heat sink configured to dissipate at least the first quantity of heat per unit time, wherein the light generation portion and the heat dissipation portion are characterized a first mass, and wherein a ratio of the first intensity to the first mass is within a range of about 10 lumens per gram to about 30 lumens per gram.
-
92.
公开(公告)号:US20180175240A1
公开(公告)日:2018-06-21
申请号:US15883174
申请日:2018-01-30
Applicant: SORAA, INC.
Inventor: CHRISTOPHE HURNI
CPC classification number: H01L33/0095 , H01L33/0075 , H01L33/405 , H01L2933/0016
Abstract: Techniques for controlling oxygen concentration levels during annealing of highly-reflective contacts for LED devices together with lamps, LED device and method embodiments thereto are disclosed.
-
公开(公告)号:US09995439B1
公开(公告)日:2018-06-12
申请号:US14336276
申请日:2014-07-21
Applicant: SORAA, INC.
Inventor: Frank Tin Chung Shum , Michael Ragan Krames
CPC classification number: F21K9/54 , F21K9/233 , F21K9/68 , F21K9/69 , F21V7/0016 , F21V7/0091 , F21V13/04 , F21V17/105 , F21V29/67 , F21V29/74 , F21Y2115/10
Abstract: Compact reflective lens for a high intensity light emitting diode light sources having improved output beam characteristics are disclosed. The reflective lenses can be configured to increase output intensity, control output light characteristics, and reduce glare.
-
公开(公告)号:US20180047868A1
公开(公告)日:2018-02-15
申请号:US15674077
申请日:2017-08-10
Applicant: SORAA, INC.
Inventor: AURELIEN J.F. DAVID , MARK P. D'EVELYN , CHRISTOPHE A. HURNI , NATHAN YOUNG , MICHAEL J. CICH
CPC classification number: H01L33/06 , H01L33/007 , H01L33/025 , H01L33/04 , H01L33/08 , H01L33/145 , H01L33/32
Abstract: A method of forming a HI-Nitride based device comprising: (a) depositing first layers by MOCVD on a substrate, wherein the first layers comprise device layers of III-Nitride material; and (b) depositing epitaxial second layers over the first layers by at least one of sputtering, plasma deposition, pulsed laser deposition, or liquid phase epitaxy, wherein the second layers comprise III-Nitride material and define at least partially a tunnel junction.
-
公开(公告)号:US20180027638A1
公开(公告)日:2018-01-25
申请号:US15653900
申请日:2017-07-19
Applicant: SORAA, INC.
Inventor: LASZLO TAKACS
CPC classification number: H05B41/38 , H05B33/0842 , H05B37/0227 , H05B37/0263 , Y02B20/48
Abstract: A smart lamp comprising: a lamp; and a processor configured to operate said lamp, said processor having at least active and standby modes of operation, in said active mode, said processor uses a first communication protocol having a first power consumption, and, in said standby mode, said processor uses a second communication protocol having a second power consumption, wherein said first power consumption is significantly higher than said second power consumption.
-
公开(公告)号:US20180013036A1
公开(公告)日:2018-01-11
申请号:US15700562
申请日:2017-09-11
Applicant: SORAA, INC.
Inventor: Thomas M. Katona , James W. Raring , Mark P. D'Evelyn , Michael R. Krames , Aurelien J.F. David
CPC classification number: H01L33/20 , H01L33/0075 , H01L33/02 , H01L33/16 , H01L33/32 , H01L33/405 , H05B33/0842
Abstract: A light emitting diode device has a bulk gallium and nitrogen containing substrate with an active region. The device has a lateral dimension and a thick vertical dimension such that the geometric aspect ratio forms a volumetric diode that delivers a nearly uniform current density across the range of the lateral dimension.
-
公开(公告)号:US09761763B2
公开(公告)日:2017-09-12
申请号:US14135098
申请日:2013-12-19
Applicant: SORAA, INC.
Inventor: Frank M. Steranka , Rafael Aldaz , Seshasayee Ankireddi , Troy Trottier , Rohit Modi , Rajarshi Saha
IPC: H01L33/00 , H01L33/44 , H01L33/50 , F21S8/10 , H01L25/075 , H01L33/20 , F21Y101/00 , F21K9/233 , F21Y115/10
CPC classification number: H01L33/44 , F21K9/233 , F21S41/143 , F21S41/155 , F21Y2101/00 , F21Y2115/10 , H01L25/0753 , H01L33/20 , H01L33/50 , H01L2224/48091 , H01L2924/12044 , H01L2933/0041 , H01L2924/00014 , H01L2924/00
Abstract: Techniques for fabricating and using arrays of violet-emitting LEDs coated with densely-packed-luminescent-material layers together with apparatus and method embodiments thereto are disclosed.
-
公开(公告)号:US20170222100A1
公开(公告)日:2017-08-03
申请号:US15489261
申请日:2017-04-17
Applicant: Soraa, Inc.
Inventor: Aurelien J.F. David , Arpan Chakraborty , Michael Ragan Krames , Troy Trottier
Abstract: An LED pump light with multiple phosphors is described. LEDs emitting radiation at violet and/or ultraviolet wavelengths are used to pump phosphor materials that emit other colors. The LEDs operating in different wavelength ranges are arranged to reduce light re-absorption and improve light output efficiency.
-
公开(公告)号:US09660152B2
公开(公告)日:2017-05-23
申请号:US15077387
申请日:2016-03-22
Applicant: SORAA, INC.
Inventor: Aurelien J. F. David , Arpan Chakraborty , Michael Ragan Krames , Troy Trottier
CPC classification number: H01L33/504 , C09K11/0883 , C09K11/565 , C09K11/7721 , C09K11/7734 , C09K11/7739 , C09K11/7774 , H01L25/0753 , H01L33/08 , H01L33/32 , H01L33/486 , H01L33/50 , H01L33/54 , H01L2924/0002 , Y02B20/181 , H01L2924/00
Abstract: An LED pump light with multiple phosphors is described. LEDs emitting radiation at violet and/or ultraviolet wavelengths are used to pump phosphor materials that emit other colors. The LEDs operating in different wavelength ranges are arranged to reduce light re-absorption and improve light output efficiency.
-
公开(公告)号:US09653554B2
公开(公告)日:2017-05-16
申请号:US14805278
申请日:2015-07-21
Applicant: SORAA, INC.
Inventor: Mark P. D'Evelyn , Michael Ragan Krames
CPC classification number: C30B25/18 , C30B23/025 , C30B29/406 , H01L21/0254 , H01L21/7813 , H01L29/04 , H01L29/045 , H01L29/2003 , H01L29/36 , H01L31/00 , H01L31/03044 , H01L31/1856 , H01L31/1892 , H01L33/0075 , H01L33/0079 , H01L33/32 , H01S5/3013 , Y02E10/544
Abstract: Techniques for processing materials for manufacture of gallium-containing nitride substrates are disclosed. More specifically, techniques for fabricating and reusing large area substrates using a combination of processing techniques are disclosed. The methods can be applied to fabricating substrates of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others. Such substrates can be used for a variety of applications including optoelectronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photo detectors, integrated circuits, transistors, and others.
-
-
-
-
-
-
-
-
-