公开(公告)号：US20180040486A1

公开(公告)日：2018-02-08

申请号：US15789282

申请日：2017-10-20

Applicant: Applied Materials, Inc.

Inventor： Jeffrey W. Anthis ,  Benjamin Schmiege ,  David Thompson

IPC: H01L21/3213 ,  C23F4/00 ,  C23F1/00 ,  C23F1/12 ,  H01J37/32

CPC classification number: H01L21/32136 ,  C23F1/00 ,  C23F1/12 ,  C23F4/00 ,  H01J37/32715 ,  H01J37/32862 ,  H01L21/32135

Abstract: Provided are methods for etching films comprising transition metals. Certain methods involve activating a substrate surface comprising at least one transition metal, wherein activation of the substrate surface comprises exposing the substrate surface to heat, a plasma, an oxidizing environment, or a halide transfer agent to provide an activated substrate surface; and exposing the activated substrate surface to a reagent comprising a Lewis base or pi acid to provide a vapor phase coordination complex comprising one or more atoms of the transition metal coordinated to one or more ligands from the reagent. Certain other methods provide selective etching from a multi-layer substrate comprising two or more of a layer of Co, a layer of Cu and a layer of Ni.

公开(公告)号：US20180033689A1

公开(公告)日：2018-02-01

申请号：US15658846

申请日：2017-07-25

Applicant: Applied Materials, Inc.

Inventor： Jeffrey W. Anthis ,  David Thompson

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/311 ,  H01L23/528

CPC classification number: H01L21/76879 ,  H01L21/31105 ,  H01L21/76888 ,  H01L23/528 ,  H01L23/53209

Abstract: Methods for filing a feature on a substrate surface comprising depositing a conformal nitride film on the substrate surface and at least one feature on the surface, oxidizing a portion of the nitride film to form an asymmetric oxide film on top of the nitride film and etching the oxide film from the nitride film to leave a v-shaped nitride film in the at least one feature.

公开(公告)号：US20170358444A1

公开(公告)日：2017-12-14

申请号：US15621018

申请日：2017-06-13

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  Jeffrey W. Anthis

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/40 ,  C23C16/18

CPC classification number: H01L21/02192 ,  C07F5/00 ,  C23C16/18 ,  C23C16/34 ,  C23C16/40 ,  H01L21/02274 ,  H01L21/0228

Abstract: Metal coordination complexes comprising a metal atom coordinated to at least one aza-allyl ligand having the structure represented by: where each R1-R4 are independently selected from the group consisting of H, branched or unbranched C1-C6 alkyl, branched or unbranched C1-C6 alkenyl, branched or unbranched C1-C6 alkynyl, cycloalkyl groups having in the range of 1 to 6 carbon atoms, silyl groups and halogens. Methods of depositing a film using the metal coordination complex and a suitable reactant are also described

公开(公告)号：US09768013B2

公开(公告)日：2017-09-19

申请号：US15247586

申请日：2016-08-25

Applicant: Applied Materials, Inc.

Inventor： Abhishek Dube ,  Schubert S. Chu ,  Jessica S. Kachian ,  David Thompson ,  Jeffrey Anthis

IPC: H01L21/02 ,  H01L21/283 ,  H01J37/32 ,  C23C16/455 ,  C23C16/04

CPC classification number: H01L21/0228 ,  C23C16/04 ,  C23C16/45544 ,  H01J37/32009 ,  H01J37/32357 ,  H01J37/32522 ,  H01J37/32899 ,  H01J2237/334 ,  H01L21/02049 ,  H01L21/02057 ,  H01L21/0217 ,  H01L21/02172 ,  H01L21/02175 ,  H01L21/283 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/32 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/67745

Abstract: Methods and apparatus for processing a substrate are described herein. Methods for passivating dielectric materials include forming alkyl silyl moieties on exposed surfaces of the dielectric materials. Suitable precursors for forming the alkyl silyl moieties include (trimethylsilyl)pyrrolidine, aminosilanes, and dichlorodimethylsilane, among others. A capping layer may be selectively deposited on source/drain materials after passivation of the dielectric materials. Apparatus for performing the methods described herein include a platform comprising a transfer chamber, a pre-clean chamber, an epitaxial deposition chamber, a passivation chamber, and an atomic layer deposition chamber.

公开(公告)号：US09716012B2

公开(公告)日：2017-07-25

申请号：US14560525

申请日：2014-12-04

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  Huixiong Dai ,  Patrick M. Martin ,  Timothy Michaelson ,  Kadthala R. Narendrnath ,  Robert Jan Visser ,  Jingjing Xu ,  Lin Zhang

IPC: H01L21/3205 ,  C23C16/04 ,  C23C16/18 ,  C23C16/455 ,  H01L21/285 ,  H01L21/768

CPC classification number: H01L21/32051 ,  C23C16/04 ,  C23C16/18 ,  C23C16/45551 ,  C23C16/45553 ,  H01L21/28562 ,  H01L21/76849

Abstract: Provided are methods for selective deposition. Certain methods describe providing a first substrate surface; providing a second substrate surface; depositing a first layer of film over the first and second substrate surfaces, wherein the deposition has an incubation delay over the second substrate surface such that the first layer of film over the first substrate surface is thicker than the first layer of film deposited over the second substrate surface; and etching the first layer of film over the first and second substrate surfaces, wherein the first layer of film over the second substrate surface is at least substantially removed, but the first layer of film over the first substrate is only partially removed.

公开(公告)号：US20170117144A1

公开(公告)日：2017-04-27

申请号：US15299708

申请日：2016-10-21

Applicant: Applied Materials, Inc.

Inventor： Lakmal Kalutarage ,  Mark Saly ,  David Thompson

IPC: H01L21/02

CPC classification number: H01L21/02321 ,  H01L21/02203

Abstract: Methods for modifying the properties of a porous film are described. An infiltrating material is deposited within the pores of the porous film.

公开(公告)号：US20170114465A1

公开(公告)日：2017-04-27

申请号：US15297262

申请日：2016-10-19

Applicant: Applied Materials, Inc.

Inventor： Lakmal Kalutarage ,  Mark Saly ,  David Thompson

IPC: C23C16/50 ,  H01J37/32 ,  C23C16/34 ,  C23C16/56 ,  H01L21/02 ,  C23C16/40

CPC classification number: C23C16/50 ,  C23C16/308 ,  C23C16/345 ,  C23C16/401 ,  C23C16/452 ,  C23C16/56 ,  H01J37/32357 ,  H01J2237/3321 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02326 ,  H01L21/02337 ,  H01L21/02348

Abstract: Provided are methods for depositing flowable films comprising SiO or SiN. Certain methods comprise exposing a substrate surface to a siloxane or silazane precursor; exposing the substrate surface to a plasma-activated co-reactant to provide a SiON intermediate film; UV curing the SiON intermediate film to provide a cured intermediate film; and annealing the cured intermediate film to provide a film comprising SiO or SiN.

公开(公告)号：US20160031916A1

公开(公告)日：2016-02-04

申请号：US14876057

申请日：2015-10-06

Applicant: Applied Materials, Inc.

Inventor： Mark Saly ,  David Thompson

IPC: C07F7/10

CPC classification number: C07F7/10 ,  C23C16/45553 ,  H01L21/02123 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228

Abstract: Provided are silacyclopropane-based compounds and methods of making the same. Also provided are methods of using said compounds in film deposition processes to deposit films comprising silicon. Certain methods comprise exposing a substrate surface to a silacyclopropane-based precursor and a co-reagent in various combinations.

公开(公告)号：US20160024647A1

公开(公告)日：2016-01-28

申请号：US14801215

申请日：2015-07-16

Applicant: Applied Materials, Inc.

Inventor： Mark Saly ,  David Thompson ,  Lakmal Kalutarage

IPC: C23C16/22 ,  H01L21/02 ,  C23C16/56

CPC classification number: H01L21/0228 ,  C23C16/30 ,  C23C16/45531 ,  C23C16/56 ,  H01L21/02126

Abstract: Methods for the deposition of a SiCON film by molecular layer deposition using a multi-functional amine and a silicon containing precursor having a reactive moiety.

Abstract translation: 通过使用多功能胺和含有反应性部分的含硅前体的分子层沉积来沉积SiCON膜的方法。

公开(公告)号：US20160020091A1

公开(公告)日：2016-01-21

申请号：US14795521

申请日：2015-07-09

Applicant: Applied Materials, Inc.

Inventor： Mark Saly ,  David Thompson ,  Jessica Sevanne Kachian

IPC: H01L21/02

CPC classification number: H01L21/02529 ,  C23C16/325 ,  C23C16/36 ,  C23C16/45531 ,  C23C16/4554 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262

Abstract: Methods for the deposition of a silicon-containing film using an organic reactant, a silicon precursor and a plasma.

Abstract translation: 使用有机反应物，硅前体和等离子体沉积含硅膜的方法。