公开(公告)号：US09780756B2

公开(公告)日：2017-10-03

申请号：US14449764

申请日：2014-08-01

Applicant: RF Micro Devices, Inc.

Inventor： George Maxim ,  Dirk Robert Walter Leipold ,  Baker Scott

IPC: H03H7/09 ,  H03H7/01 ,  H03J5/24 ,  H03F1/56 ,  H03F3/193 ,  H03F3/24 ,  H03F3/68 ,  H03F3/72

CPC classification number: H03H7/0161 ,  H03F1/565 ,  H03F3/193 ,  H03F3/245 ,  H03F3/68 ,  H03F3/72 ,  H03F2200/111 ,  H03F2200/267 ,  H03F2200/391 ,  H03F2200/451 ,  H03F2203/7209 ,  H03H7/0153 ,  H03H7/09 ,  H03H7/1775 ,  H03H2210/012 ,  H03H2210/025 ,  H03H2210/04 ,  H03J5/242

Abstract: Embodiments of radio frequency (RF) front-end circuitry are disclosed where the RF front-end circuitry includes a tunable RF filter structure and a calibration circuit. The tunable RF filter structure includes (at least) a pair of weakly coupled resonators and defines a transfer function with a passband. The calibration circuit is configured to shape the passband so that the passband defines a center frequency. Additionally, the calibration circuit is configured to detect a phase difference at the target center frequency between the pair of weakly coupled resonators and adjust the phase difference of the pair of weakly coupled resonators at the target center frequency so as to reduce a frequency displacement between the center frequency of the passband and the target center frequency. In this manner, the calibration circuit calibrates the tunable RF filter structure to correct for errors in the center frequency of the passband due to component manufacturing variations.

公开(公告)号：US09761367B2

公开(公告)日：2017-09-12

申请号：US14927546

申请日：2015-10-30

Applicant: RF Micro Devices, Inc.

Inventor： Dirk Robert Walter Leipold ,  George Maxim ,  Baker Scott

IPC: H03H7/46 ,  H01F27/28 ,  H03H7/38 ,  H04B1/40 ,  H04J1/08

CPC classification number: H01F27/2804 ,  H01F2027/2809 ,  H03H7/38 ,  H03H7/463 ,  H04B1/40 ,  H04J1/08

Abstract: Multiplexing circuitry is disclosed that includes filtering circuitry, which provides a first transfer function between a common port and a first port and a second transfer function between the common port and a second port. The first transfer function and second transfer function provide a first passband and a second passband, respectively. The first transfer function also has a stopband provided within the second passband of the second transfer function due to the filtering circuitry including a first parallel resonant circuit provided in series in a first filter path being weakly coupled to a second parallel resonant provided in shunt with respect to a second filter path. The weak coupling between the first parallel resonant circuit and the second parallel resonant circuit thus naturally provides a stopband in the first transfer function within the second passband of the second transfer function.

公开(公告)号：US09755671B2

公开(公告)日：2017-09-05

申请号：US14450028

申请日：2014-08-01

Applicant: RF Micro Devices, Inc.

Inventor： George Maxim ,  Dirk Robert Walter Leipold ,  Baker Scott

IPC: H03F3/24 ,  H03F3/19 ,  H04B1/16 ,  H04B1/04 ,  H03F1/56 ,  H03F3/193 ,  H03F3/68 ,  H03F3/72 ,  H03H7/09 ,  H03H7/01

CPC classification number: H04B1/0458 ,  H03F1/565 ,  H03F3/193 ,  H03F3/245 ,  H03F3/68 ,  H03F3/72 ,  H03F2200/111 ,  H03F2200/267 ,  H03F2200/391 ,  H03F2200/451 ,  H03F2203/7209 ,  H03H7/09 ,  H03H7/1775 ,  H03H2210/012 ,  H03H2210/025 ,  H03H2210/04

Abstract: Embodiments of radio frequency (RF) filter front-end circuitry are disclosed that include a tunable RF filter structure having weakly coupled resonators and a Voltage Standing Wave Ratio (VSWR) control circuit. The VSWR control circuit is configured to detect a VSWR at a terminal of the tunable RF filter structure and to dynamically tune the tunable RF filter structure based on the VSWR. In this manner, the VSWR control circuit tunes the tunable RF filter structure to improve performance of tunable RF filter structure over variations in the VSWR.

公开(公告)号：US09741632B2

公开(公告)日：2017-08-22

申请号：US14851652

申请日：2015-09-11

Applicant: RF Micro Devices, Inc.

Inventor： Dirk Robert Walter Leipold ,  Julio C. Costa ,  Baker Scott

IPC: H01L23/31 ,  H01L23/29 ,  H01L23/367 ,  H01L23/373 ,  H01L21/311 ,  H01L21/3105 ,  H01L21/683 ,  H01L21/02 ,  H01L21/56 ,  H01L21/762

Abstract: A printed circuit module and methods for manufacturing the same are disclosed. The printed circuit module includes a printed circuit substrate with a thinned die attached to the printed circuit substrate. The thinned die includes at least one device layer over the printed circuit substrate and a buried oxide (BOX) layer over the at least one device layer. A polymer layer is disposed over the BOX layer, wherein the polymer has a thermal conductivity greater than 2 watts per meter Kelvin (W/mK) and an electrical resistivity of greater than 103 Ohm-cm.

公开(公告)号：US09653772B2

公开(公告)日：2017-05-16

申请号：US14931621

申请日：2015-11-03

Applicant: RF Micro Devices, Inc.

Inventor： George Maxim ,  Dirk Robert Walter Leipold ,  Baker Scott

IPC: H01L27/08 ,  H01P7/06 ,  H01L21/027 ,  H01L49/02 ,  H03H9/24 ,  H01P7/08

CPC classification number: H01F27/2804 ,  H01F2027/2809 ,  H01L21/0276 ,  H01L28/10 ,  H01P7/06 ,  H01P7/065 ,  H01P7/08 ,  H03H7/38 ,  H03H7/463 ,  H03H9/24 ,  H04B1/40 ,  H04J1/08

Abstract: A resonator includes a laminate, an inductive element on the laminate, and a semiconductor die attached to the inductive element and the laminate. The semiconductor die includes a substrate and a device layout area. The device layout area is separated into a number of device layout sub-areas, each of which has an area between about 1.0 μm2 and 100.0 μm2. By limiting the area of each one of the device layout sub-areas with the charge carrier trap trenches, the total area of the semiconductor die prone to inducement of eddy currents (i.e., the layer of accumulated charge at the interface of the substrate and the device layout area) is reduced, which in turn reduces interference with the magnetic field of the inductive element and thus improves the performance of the resonator.

公开(公告)号：US09647641B2

公开(公告)日：2017-05-09

申请号：US14450199

申请日：2014-08-01

Applicant: RF Micro Devices, inc.

Inventor： George Maxim ,  Dirk Robert Walter Leipold ,  Baker Scott

IPC: H03J3/06 ,  H03H7/01 ,  H03H7/46 ,  H03F1/56 ,  H03F3/193 ,  H03F3/24 ,  H03F3/68 ,  H03F3/72 ,  H03H7/09 ,  H03J5/24 ,  H03H7/38

Abstract: RF communications circuitry, which includes a first tunable RF filter and a first RF low noise amplifier (LNA) is disclosed. The first tunable RF filter includes a pair of weakly coupled resonators, and receives and filters a first upstream RF signal to provide a first filtered RF signal. The first RF LNA is coupled to the first tunable RF filter, and receives and amplifies an RF input signal to provide an RF output signal.

公开(公告)号：US09614490B2

公开(公告)日：2017-04-04

申请号：US14298852

申请日：2014-06-06

Applicant: RF Micro Devices, Inc.

Inventor： George Maxim ,  Dirk Robert Walter Leipold ,  Baker Scott

IPC: H03H7/01 ,  H03H7/46 ,  H03F3/193 ,  H04B1/10 ,  H03F1/56 ,  H03F3/24 ,  H03F3/68 ,  H03F3/72 ,  H04B1/18 ,  H03H7/09

CPC classification number: H03H7/465 ,  H03F1/565 ,  H03F3/193 ,  H03F3/245 ,  H03F3/68 ,  H03F3/72 ,  H03F2200/111 ,  H03F2200/267 ,  H03F2200/451 ,  H03F2203/7209 ,  H03H7/0115 ,  H03H7/0153 ,  H03H7/09 ,  H03H7/1775 ,  H03H7/46 ,  H03H7/463 ,  H03H2210/012 ,  H03H2210/025 ,  H03H2210/04 ,  H04B1/1027 ,  H04B1/18

Abstract: RF communications circuitry, which includes a first RF filter structure and control circuitry, is disclosed. The first RF filter structure includes a pair of weakly coupled resonators and a first tunable RF filter. The control circuitry provides a first filter control signal. The first tunable RF filter receives and filters an upstream RF signal to provide a first filtered RF signal, such that a center frequency of the first tunable RF filter is based on the first filter control signal.

公开(公告)号：US09571056B2

公开(公告)日：2017-02-14

申请号：US14554746

申请日：2014-11-26

Applicant: RF Micro Devices, Inc.

Inventor： Baker Scott ,  George Maxim ,  Dirk Robert Walter Leipold

IPC: H03G3/30 ,  H03F1/52 ,  H03F1/02 ,  H03F3/19 ,  H04B1/04 ,  H03F1/32 ,  H03F3/68 ,  H03F1/22 ,  H03F1/56 ,  H03F3/45 ,  H03F3/193

CPC classification number: H03G3/3036 ,  H03F1/0211 ,  H03F1/0272 ,  H03F1/223 ,  H03F1/32 ,  H03F1/523 ,  H03F1/565 ,  H03F3/19 ,  H03F3/193 ,  H03F3/24 ,  H03F3/45179 ,  H03F3/45394 ,  H03F3/68 ,  H03F2200/324 ,  H03F2200/387 ,  H03F2200/451 ,  H03F2200/471 ,  H03F2201/3236 ,  H03G3/3042 ,  H04B1/0475 ,  H04B2001/0408 ,  H04B2001/0416 ,  H04B2001/0425

Abstract: RF PA circuitry includes an amplifier stage, gain compensation circuitry, and an adder. The amplifier stage is configured to receive and amplify an RF input signal to provide an RF output signal. The gain compensation circuitry is coupled in parallel with the amplifier stage and configured to receive the RF input signal and provide a gain compensation signal, wherein the gain compensation signal is configured to linearize at least a portion of the gain response of the amplifier stage or the RF PA circuitry in general. The adder is coupled between an output of the amplifier stage and the gain compensation stage and is configured to receive and add the RF output signal and the gain compensation signal to provide a linearized RF output signal.

Abstract translation: RF PA电路包括放大器级，增益补偿电路和加法器。 放大器级被配置为接收和放大RF输入信号以提供RF输出信号。 所述增益补偿电路与所述放大器级并联并且被配置为接收所述RF输入信号并提供增益补偿信号，其中所述增益补偿信号被配置为线性化放大器级的增益响应的至少一部分或 RF PA电路一般。 加法器耦合在放大器级的输出端和增益补偿级之间，并且被配置为接收和添加RF输出信号和增益补偿信号以提供线性化的RF输出信号。

公开(公告)号：US09559644B2

公开(公告)日：2017-01-31

申请号：US14931448

申请日：2015-11-03

Applicant: RF Micro Devices, Inc.

Inventor： George Maxim ,  Dirk Robert Walter Leipold ,  Baker Scott ,  Ralph Christopher Nieri

IPC: H03F3/04 ,  H03F3/193 ,  H03F1/26 ,  H04B1/10 ,  H04B7/08 ,  H04W72/04 ,  H03F1/02 ,  H03F1/22

CPC classification number: H03F3/193 ,  H03F1/0261 ,  H03F1/223 ,  H03F1/26 ,  H03F2200/294 ,  H03F2200/451 ,  H03F2200/492 ,  H04B1/1036 ,  H04B7/08 ,  H04B2001/1063 ,  H04W72/04

Abstract: Circuitry includes a floating-body main field-effect transistor (FET) device, a body-contacted cascode FET device, and biasing circuitry coupled to the floating-body main FET device and the body-contacted cascode FET device. The floating-body main FET device includes a gate contact, a drain contact, and a source contact. The body-contacted cascode FET device includes a gate contact, a drain contact coupled to a supply voltage, and a source contact coupled to the drain contact of the floating-body main FET device and to a body region of the body-contacted cascode FET device. The biasing circuitry is coupled to the gate contact of the floating-body main FET device and the gate contact of the body-contacted cascode FET device and configured to provide biasing signals to the floating-body main FET device and the body-contacted cascode FET device such that a majority of the supply voltage is provided across the body-contacted cascode FET device.

Abstract translation: 电路包括浮体主场效应晶体管（FET）器件，体接触共源共栅FET器件和耦合到浮体主FET器件和体接触共源共栅FET器件的偏置电路。 浮体主FET器件包括栅极接触，漏极接触和源极接触。 身体接触的共源共栅型FET器件包括栅极接触，耦合到电源电压的漏极接触以及耦合到浮体主FET器件的漏极接触和与身体接触的共源共栅FET的体区的源极接触 设备。 偏置电路耦合到浮体主FET器件的栅极接触和体接触共源共栅FET器件的栅极接触，并且被配置为向浮体主FET器件和体接触的共源共栅FET提供偏置信号 器件，使得大部分电源电压被提供在身体接触的共源共栅型FET器件上。

公开(公告)号：US09530709B2

公开(公告)日：2016-12-27

申请号：US14885243

申请日：2015-10-16

Applicant: RF Micro Devices, Inc.

Inventor： Dirk Robert Walter Leipold ,  George Maxim ,  Julio C. Costa ,  Baker Scott

IPC: H01L23/31 ,  H01L21/306 ,  H01L21/304 ,  H01L21/02 ,  H01L21/683 ,  H01L23/29 ,  H01L23/373 ,  H01L23/00 ,  H05K1/02 ,  H05K1/18 ,  H01Q1/50

CPC classification number: H01L23/315 ,  H01L21/02266 ,  H01L21/02282 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/565 ,  H01L21/6835 ,  H01L23/20 ,  H01L23/291 ,  H01L23/293 ,  H01L23/3121 ,  H01L23/3135 ,  H01L23/36 ,  H01L23/367 ,  H01L23/3731 ,  H01L23/3737 ,  H01L23/5223 ,  H01L23/5227 ,  H01L23/5228 ,  H01L23/562 ,  H01L24/17 ,  H01L28/10 ,  H01L28/20 ,  H01L28/40 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/73204 ,  H01L2224/92125 ,  H01L2924/0002 ,  H01L2924/19011 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01Q1/50 ,  H05K1/0203 ,  H05K1/181 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/00014

Abstract: A printed circuit module having a protective layer in place of a low-resistivity handle layer and methods for manufacturing the same are disclosed. The printed circuit module includes a printed circuit substrate with a thinned die attached to the printed circuit substrate. The thinned die includes at least one device layer over the printed circuit substrate and at least one deep well within the at least one device layer. A protective layer is disposed over the at least one deep well, wherein the protective layer has a thermal conductivity greater than 2 watts per meter Kelvin (W/mK) and an electrical resistivity of greater than 103 Ohm-cm.

Abstract translation: 公开了一种具有代替低电阻手柄层的保护层的印刷电路模块及其制造方法。 印刷电路模块包括具有附接到印刷电路基板的薄化管芯的印刷电路基板。 薄化的管芯包括印刷电路衬底上的至少一个器件层和至少一个器件层内的至少一个深阱。 保护层设置在至少一个深孔的上方，其中保护层具有大于2瓦/米开尔文（W / mK）的热导率和大于103欧姆 - 厘米的电阻率。