摘要:
A chip package including a circuit substrate, a chip, a B-staged adhesive layer, a leadframe, a number of first bonding wires, a number of second bonding wires, and a number of third bonding wires. The chip is disposed on the circuit substrate. The B-staged adhesive layer is disposed on the circuit substrate. The leadframe is disposed on the circuit substrate and includes a number of leads. Portions of the leads are embedded in the B-staged adhesive layer, and an end of each of the leads is exposed by the B-staged adhesive layer. The first bonding wires are electrically connected between the chip and the circuit substrate. The second bonding wires are electrically connected between the chip and the leads. The third bonding wires are electrically connected between the leads and the circuit substrate. In addition, a manufacturing method of a chip package is also provided.
摘要:
A manufacturing process of a leadframe-based BGA package is disclosed. A leadless leadframe with an upper layer and a lower layer is provided for the package. The upper layer includes a plurality of ball pads, and the lower layer includes a plurality of sacrificial pads aligning and connecting with the ball pads. A plurality of leads are formed in either the upper layer or the lower layer to interconnect the ball pads or the sacrificial pads. An encapsulant is formed to embed the ball pads after chip attachment and electrical connections. During manufacturing process, a half-etching process is performed after encapsulation to remove the sacrificial pads to make the ball pads electrically isolated and exposed from the encapsulant for solder ball placement where the soldering areas of the ball pads are defined without the need of solder mask(s) to solve the problem of solder bleeding of the solder balls on the leads or the undesired spots during reflow. Moreover, mold flash can easily be detected and removed.
摘要:
An IC package to enhance the bondibility of embedded bumps, primarily includes a substrate having a plurality of bump-accommodating holes, a bumped chip, an encapsulant, and a plurality of external terminals. The substrate further has a plurality of inner pads at one ends of the bump-accommodating holes respectively. The inner pads may be meshed or a soldering layer is disposed thereon for improving bump connection. The chip is attached to the substrate with the bumps aligned and embedded in the corresponding bump-accommodating holes. The encapsulant is at least formed on a lower surface of the substrate to encapsulate the meshes or the soldering layer. By the suspended meshes or/and the soldering layer, the bumps can be easily bonded at lower temperatures to simplify the manufacturing process with shorter electrical conductive paths and thinner package profiles without wire sweeping.
摘要:
In a chip packaging process, an upper and a lower mold chases are provided. A thickness adjusting film is then provided below the upper mold chase and/or above the lower mold chase. Next, a carrier is delivered to a position between the upper and the lower mold chases. A chip and a conductive line are disposed on the carrier, and the thickness adjusting film is located between the upper mold chase and the carrier and/or between the lower mold chase and the carrier. The upper and the lower mold chases are attached to define a cavity, and the thickness adjusting film is located on the surface of the upper mold chase and/or the surface of the lower mold chase. Thereafter, a molding compound is provided into the cavity by using a molding compound supplying unit. The upper and the lower mold chases and the thickness adjusting film are removed.
摘要:
A laser mark is inscribed on an IC component, which character stroke consists of a plurality of laser paths inscribed by a laser beam. The width of the character stroke is greater than the widths of the laser paths. In addition, at least two of the laser paths, moving in opposite directions or in a same direction of the laser beam, are integrally connected as a laser-inscribing stroke to reduce end-to-end breaks between the laser paths.
摘要:
This invention provides a wafer testing system and testing method thereof. The wafer testing system comprises a wafer storage section, a prober, a tester, an RFID middleware unit, an EDA system and an MES system. The wafer storage section stores a multiplicity of carriers, each of which is provided with at least a RFID tag. The prober comprises a RFID reader to read a tag information. The tester sends a test signal to the prober for implementing the wafer test so as to generate a test result and calls an interface program to convert the test result into a file conformed with a specific data format. The RFID middleware unit receives the tag information and calls related applications to process the tag information so as to generate a wafer information. The EDA system receives the file of the specific data format converted from the interface program and calculates thereof to generate a wafer yield information after wafer test. The MES system integrates the wafer information from the RFID middleware unit with the yield information from the EDA system so as to allow monitoring the wafer manufacturing process and testing yield rate in a real-time manner.
摘要:
A chip package structure including a circuit pattern, a frame, a first adhesive layer, a plurality of leads, an insulating adhesive layer, a chip, a plurality of first bonding wires, a plurality of second bonding wires, and a molding compound is provided. The frame and leads are disposed around the circuit pattern. The first adhesive layer fastens the frame and the circuit pattern. The insulating adhesive layer is disposed between the leads and the frame. The chip has a plurality of bonding pads and is disposed on the first adhesive layer. The first bonding wires electrically connect the bonding pads individually to the circuit pattern. The second bonding wires electrically connect the leads individually to the circuit pattern. Thus, the bonding pads are electrically connected with the leads through the first bonding wires, the circuit pattern, and the second bonding wires. The molding compound covers foregoing components.
摘要:
A chip package having asymmetric molding includes a lead frame, a chip, an adhesive layer, bonding wires and a molding compound. The lead frame includes a turbulent plate and a frame body having inner lead portions and outer lead portions. The turbulent plate is bended downwards to form a concave portion. The first end of the turbulent plate is connected to the frame body, and the second end is lower than the inner lead portions. The chip is fixed under the inner lead portions through the adhesive layer. The bonding wires are connected between the chip and the inner lead portions. The molding compound encapsulates the chip, the bonding wires, and the turbulent plate. The ratio between the thickness of the molding compound over and under the concave portion is larger than 1. The thickness of the molding compound under and over the outer lead portions is not equal.
摘要:
A chip package including a metal layer, a film-like circuit layer, a chip, a lead matrix and an encapsulant is provided. The film-like circuit layer disposed on the metal layer includes an insulating film disposed on the metal layer and a circuit layer disposed on the insulating film. The circuit layer has a plurality of conductive traces. The chip disposed above the metal layer is electrically connected to the conductive traces. The lead matrix having a plurality of leads is disposed outside the chip. At least part of the leads are electrically connected to the conductive traces. The encapsulant at least encapsulates the chip, the film-like circuit layer, at least part of the leads, and at least part of the metal layer.
摘要:
A light emitting diode including a substrate, a semiconductor layer, multiple electrodes, a passivation layer, multiple under bump metallurgy (UBM) layers and a reflective layer is provided. The semiconductor layer is disposed on the substrate. The electrodes and the passivation layer are disposed on the semiconductor layer. The passivation layer has multiple openings for exposing the electrodes. The UBM layers are disposed on the electrodes. The reflective layer is disposed on the passivation layer. The reflective layer is electrically isolated from the electrodes and the UBM layers. A method of fabricating the light emitting diode is also provided. The reflective layer and the UBM layers are fabricated simultaneously in one process. Therefore, the fabricating method is compatible with the existing process.