Composite-plated article and method for producing same
    94.
    发明授权
    Composite-plated article and method for producing same 有权
    复合电镀制品及其制造方法

    公开(公告)号:US08673445B2

    公开(公告)日:2014-03-18

    申请号:US12460394

    申请日:2009-07-17

    Applicant: Tomoyuki Sato

    Inventor: Tomoyuki Sato

    CPC classification number: C25D15/02 C25D3/12

    Abstract: A composite-plated article has a metallic material and a plating film coated on the metallic material in a nickel-plating bath containing carbon nanocomposite fibers. Each of the carbon nanocomposite fibers is formed of a carbon nanofiber core and microparticles that react with carbon to form a compound bonded to a surface of the carbon nanofiber core.

    Abstract translation: 复合电镀制品在含有碳纳米复合纤维的镀镍浴中具有金属材料和涂覆在金属材料上的镀膜。 每个碳纳米复合纤维由碳纳米纤维芯和与碳反应形成与碳纳米纤维芯的表面结合的化合物的微粒形成。

    METHOD OF FORMING INTERFERENCE FILM ON SURFACE OF ALUMINUM ALLOY SUBSTRATE
    97.
    发明申请
    METHOD OF FORMING INTERFERENCE FILM ON SURFACE OF ALUMINUM ALLOY SUBSTRATE 审中-公开
    在铝合金基板表面形成干涉膜的方法

    公开(公告)号:US20130299353A1

    公开(公告)日:2013-11-14

    申请号:US13470300

    申请日:2012-05-12

    Abstract: A method of forming an interference film on an aluminum alloy substrate includes the following steps: providing an aluminum alloy substrate; cleaning the aluminum alloy substrate through a pre-treatment process; performing an anodic treatment on the aluminum alloy substrate for a predetermined amount of time till an oxidized film having a plurality of cellular tubes is formed on the surface thereof; expanding the holes of the oxidized membrane of the aluminum alloy substrate with an acidic solution to enlarge the diameter of the cellular tubes; enlarging the bottom of the cellular tubes to form a deposition area through an electrical enlarging process; depositing a metal material on the deposition area of the cellular tubes to form an interference structure; sealing the cellular tubes with a sealing agent; and removing dirt. Furthermore, an interference film structure is formed on the aluminum alloy substrate using the aforementioned method.

    Abstract translation: 在铝合金基板上形成干涉膜的方法包括以下步骤:提供铝合金基板; 通过预处理过程清洁铝合金基板; 对铝合金基板进行阳极处理预定的时间,直到在其表面上形成具有多个多孔管的氧化膜; 用酸性溶液膨胀铝合金基板的氧化膜的孔,以扩大多孔管的直径; 扩大细胞管的底部,通过电扩大过程形成沉积区; 在所述细胞管的沉积区域上沉积金属材料以形成干涉结构; 用密封剂密封细胞管; 并清除污垢。 此外,使用上述方法在铝合金基板上形成干涉膜结构。

    COPPER ALLOY SHEET WITH SN COATING LAYER FOR A FITTING TYPE CONNECTION TERMINAL AND A FITTING TYPE CONNECTION TERMINAL
    98.
    发明申请
    COPPER ALLOY SHEET WITH SN COATING LAYER FOR A FITTING TYPE CONNECTION TERMINAL AND A FITTING TYPE CONNECTION TERMINAL 审中-公开
    具有SN涂层的铜合金板用于配接型连接端子和配接型连接端子

    公开(公告)号:US20130237105A1

    公开(公告)日:2013-09-12

    申请号:US13785549

    申请日:2013-03-05

    Abstract: A copper alloy sheet with a Sn coating layer comprises a base material made of Cu—Ni—Si system copper alloy. Formed on the base material is a Ni coating layer having an average thickness of 0.1 to 0.8 μm. Formed on the Ni coating layer is a Cu—Sn alloy coating layer having an average thickness of 0.4 to 1.0 μm. Formed on the Cu—Sn alloy coating layer is an Sn coating layer having average thickness of 0.1 to 0.8 μm. A material surface is subject to reflow treatment and has arithmetic mean roughness Ra of 0.03 μm or more and less than 0.15 μm in both a direction parallel to the rolling direction and a direction perpendicular to the rolling direction. An exposure rate of the Cu—Sn alloy coating layer to the material surface is 10 to 50%. A fitting type connection terminal requiring low insertion force can be obtained at a low cost.

    Abstract translation: 具有Sn涂层的铜合金板包括由Cu-Ni-Si系铜合金制成的基材。 在基材上形成平均厚度为0.1〜0.8μm的Ni被覆层。 在Ni涂层上形成平均厚度为0.4〜1.0μm的Cu-Sn合金被覆层。 在Cu-Sn合金涂层上形成平均厚度为0.1〜0.8μm的Sn被覆层。 材料表面进行回流处理,并且在平行于轧制方向的方向和垂直于轧制方向的方向上的算术平均粗糙度Ra为0.03μm以上且小于0.15μm。 Cu-Sn合金被覆层与材料表面的接触率为10〜50%。 可以以低成本获得需要低插入力的装配型连接端子。

    Low-rate electrochemical etch of thin film metals and alloys
    99.
    发明授权
    Low-rate electrochemical etch of thin film metals and alloys 失效
    薄膜金属和合金的低速电化学蚀刻

    公开(公告)号:US08524068B2

    公开(公告)日:2013-09-03

    申请号:US13221726

    申请日:2011-08-30

    CPC classification number: C25D5/36 C25D3/12 C25D3/20 C25D5/40 C25F1/02 C25F3/02

    Abstract: Embodiments of the present invention include systems and methods for low-rate electrochemical (wet) etch that use a net cathodic current or potential. In particular, some embodiments achieve controlled etch rates of less than 0.1 nm/s by applying a small net cathodic current to a substrate as the substrate is submerged in an aqueous electrolyte. Depending on the embodiment, the aqueous electrolyte utilized may comprise the same type of cations as the material being etched from the substrate. Some embodiments are useful in etching thin film metals and alloys and fabrication of magnetic head transducer wafers.

    Abstract translation: 本发明的实施例包括使用净阴极电流或电位的低速电化学(湿)蚀刻的系统和方法。 特别地,一些实施例通过在衬底被浸没在含水电解质中时将小的净阴极电流施加到衬底上来实现小于0.1nm / s的受控蚀刻速率。 根据实施例,所使用的水性电解质可以包括与从衬底上蚀刻的材料相同类型的阳离子。 一些实施例在蚀刻薄膜金属和合金以及制造磁头换能器晶片方面是有用的。

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