公开(公告)号：US20140238844A1

公开(公告)日：2014-08-28

申请号：US14270440

申请日：2014-05-06

申请人： Roman Chistyakov

发明人： Roman Chistyakov

IPC分类号： H01J37/32

CPC分类号： C23C14/3414 ,  C23C14/3485 ,  C23C14/35 ,  C23C14/564 ,  H01J37/32009 ,  H01J37/32018 ,  H01J37/3408 ,  H01J37/3444 ,  H01J2237/0206

摘要： A plasma generator includes a chamber for confining a feed gas. An anode is positioned inside the chamber. A cathode assembly is positioned adjacent to the anode inside the chamber. A pulsed power supply comprising at least two solid state switches and having an output that is electrically connected between the anode and the cathode assembly generates voltage micropulses. A pulse width and a duty cycle of the voltage micropulses are generated using a voltage waveform comprising voltage oscillation having amplitudes and frequencies that generate a strongly ionized plasma.

摘要翻译： 等离子体发生器包括用于限制进料气体的室。 阳极位于室内。 阴极组件邻近室内的阳极定位。 包括至少两个固态开关并具有电连接在阳极和阴极组件之间的输出的脉冲电源产生电压微脉冲。 使用包括产生强电离等离子体的振幅和频率的电压振荡的电压波形来产生电压微脉冲的脉冲宽度和占空比。

公开(公告)号：US20140238301A1

公开(公告)日：2014-08-28

申请号：US14233669

申请日：2013-06-20

申请人： CHUGAI RO CO., LTD.

发明人： Shinya Akano

IPC分类号： H01J37/32

CPC分类号： H01J37/32669 ,  C23C14/32 ,  C23C14/54 ,  H01J37/32009 ,  H01J37/32357 ,  H01J37/32651 ,  H01J37/3266 ,  H05H1/26

摘要： The present invention provides a plasma processing apparatus capable of bringing plasma close to a processing target and separating the plasma from the processing target. The plasma processing apparatus 1 according to the present invention has a chamber internally having a holding space 2a in which a processing target object 5 is held, and a plasma space 2b in which plasma is to be formed, a plasma gun 3 for emitting electrons into the plasma space 2b to form the plasma, and at least one pair of position-adjustable opposed magnets 4 for forming a magnetic flux passing across the chamber 2, between the holding space 2a and the plasma space 2b.

摘要翻译： 本发明提供一种等离子体处理装置，其能够使等离子体接近处理对象，并将等离子体与处理对象物分离。 根据本发明的等离子体处理装置1具有内部具有保持处理对象物5的保持空间2a和要形成等离子体的等离子体空间2b的室，用于发射电子的等离子体枪3 用于形成等离子体的等离子体空间2b和用于在保持空间2a和等离子体空间2b之间形成通过室2的磁通的至少一对位置可调的相对磁体4。

公开(公告)号：US20140235063A1

公开(公告)日：2014-08-21

申请号：US14175509

申请日：2014-02-07

申请人： Lam Research Corporation

发明人： Brian McMillin ,  Arthur Sato ,  Neil Benjamin

IPC分类号： H01L21/67 ,  H01L21/3065 ,  H01J37/32

CPC分类号： H01L21/67069 ,  H01J37/32009 ,  H01J37/32082 ,  H01J37/32642 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/76898

摘要： An edge ring assembly is disclosed for use in a plasma processing chamber, which includes an RF conductive ring positioned on an annular surface of a base plate and configured to surround an upper portion of the baseplate and extend underneath an outer edge of a wafer positioned on the upper surface of the baseplate, and a wafer edge protection ring positioned above an upper surface of the RF conductive ring and configured to extend over the outer edge of the wafer. The protection ring has an inner edge portion with a uniform thickness, which extends over the outer edge of the wafer, a conical upper surface extending outward from the inner edge portion to a horizontal upper surface, an inner annular recess which is positioned on the upper surface of the RF conductive and configured to extend over the outer edge of the wafer.

摘要翻译： 公开了用于等离子体处理室中的边缘环组件，其包括定位在基板的环形表面上的RF导电环，并且被配置为围绕基板的上部并且延伸到位于基板上的晶片的外边缘下方 基板的上表面，以及晶片边缘保护环，其位于RF导电环的上表面上方并且被配置为在晶片的外边缘上延伸。 保护环具有均匀厚度的内边缘部分，其在晶片的外边缘延伸，从内边缘部分向外延伸到水平上表面的圆锥形上表面，位于上部的内部环形凹部 RF的表面导电并且构造成在晶片的外边缘上延伸。

公开(公告)号：US20140174662A1

公开(公告)日：2014-06-26

申请号：US14238039

申请日：2012-08-09

申请人： Tsuguo Kitajima ,  Yasumasa Ishihara

发明人： Tsuguo Kitajima ,  Yasumasa Ishihara

IPC分类号： H01J37/32

CPC分类号： B24C1/08 ,  B24C11/00 ,  C23C4/134 ,  C23C8/36 ,  C23C16/45565 ,  C23C16/45568 ,  H01J37/32009 ,  H01J37/32018 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32559 ,  H01J37/32605 ,  H01L21/31116 ,  Y10T29/49156 ,  Y10T29/49204

摘要： A plasma processing device according to one embodiment comprises a processing vessel, a gas supply unit, a lower electrode and an upper electrode. The processing vessel defines a processing space. The gas supply unit supplies processing gas into the processing space. The lower electrode is provided below the processing space. The upper electrode is provided above the processing space, and a covering layer having plasma-resistant properties is formed on this upper electrode. The surface of this covering layer is polished.

摘要翻译： 根据一个实施例的等离子体处理装置包括处理容器，气体供应单元，下电极和上电极。 处理容器限定处理空间。 气体供给单元将处理气体供给到处理空间。 下电极设置在处理空间的下方。 上部电极设置在处理空间的上方，在该上部电极上形成有耐等离子体性质的覆盖层。 该覆盖层的表面被抛光。

公开(公告)号：US20140166205A1

公开(公告)日：2014-06-19

申请号：US14111030

申请日：2012-04-06

申请人： Caizhong Tian ,  Toshihisa Nozawa ,  Kazuki Moyama ,  Takahiro Senda ,  Kazuyuki Kato ,  Munetaka Yamagami

发明人： Caizhong Tian ,  Toshihisa Nozawa ,  Kazuki Moyama ,  Takahiro Senda ,  Kazuyuki Kato ,  Munetaka Yamagami

IPC分类号： G01B11/24 ,  H01J37/32

CPC分类号： G01B11/24 ,  G01B11/02 ,  G01B11/06 ,  G01N21/9501 ,  H01J37/32009 ,  H01L21/67253 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： A process monitoring device 11 includes a light source unit that outputs light; a light detection unit that detects an intensity of light; a first optical path 21 that guides the light outputted from the light source unit to a wafer W and guides reflection light from the wafer W to the light detection unit; a second optical path that has a light propagation characteristic equivalent to that of the first optical path 21 and guides the light outputted from the light source unit to the light detection unit without allowing the light to pass the wafer W; and a controller 17 that corrects intensity information of the light detected by the light detection unit via the first optical path 21 based on intensity information of the light detected by the light detection unit via the second optical path, and analyzes a structure of the wafer W.

摘要翻译： 处理监视装置11包括输出光的光源单元; 光检测单元，其检测光的强度; 第一光路21，其将从光源单元输出的光引导到晶片W，并将来自晶片W的反射光引导到光检测单元; 具有与第一光路21的光传播特性相当的光传播特性的第二光路，并将从光源单元输出的光引导到光检测单元，而不允许光通过晶片W; 以及控制器17，其通过第一光路21基于由光检测单元检测出的光的强度信息经由第二光路校正由光检测单元检测到的光的强度信息，并分析晶片W的结构 。

公开(公告)号：US20140134829A1

公开(公告)日：2014-05-15

申请号：US13670402

申请日：2012-11-09

申请人： INFINEON TECHNOLOGIES AG

发明人： Manfred Engelhardt

IPC分类号： H01L21/67 ,  H01L21/3065 ,  H01L21/02

CPC分类号： H01J37/32642 ,  C23C16/513 ,  H01J37/32009 ,  H01J37/32532 ,  H01J37/32651 ,  H01J37/32715 ,  H01J2237/3322 ,  H01J2237/3343 ,  H01L21/3065

摘要： In accordance with an embodiment of the present invention, a process tool includes a chuck configured to hold a substrate. The chuck is disposed in a chamber. The process tool further includes a shielding unit with a central opening. The shielding unit is disposed in the chamber over the chuck.

摘要翻译： 根据本发明的实施例，处理工具包括配置成保持基板的卡盘。 卡盘设置在腔室中。 处理工具还包括具有中心开口的屏蔽单元。 屏蔽单元设置在卡盘上的腔室中。

公开(公告)号：US08628647B2

公开(公告)日：2014-01-14

申请号：US11709283

申请日：2007-02-22

申请人： Carl-Friedrich Meyer

发明人： Carl-Friedrich Meyer

IPC分类号： C23C14/24 ,  C23C14/28

CPC分类号： H01J37/32009 ,  C23C14/325 ,  H01J37/32055 ,  H01J37/32623 ,  H01J37/3266 ,  H01J37/3438

摘要： An arrangement for the separation of particles from plasma for the formation of a coating onto the surface of a substrate under vacuum conditions. The plasma is advantageously formed by electrical arc discharge. The plasma is formed from a target that can be connected as a cathode and positive charge carriers of the plasma are accelerated in the direction of a surface of a substrate to be coated by at least one absorber electrode connected to an electrical potential that is positive with respect to the plasma. The absorber electrode is arranged and orientated such that a direct incidence of plasma onto the absorber electrode is avoided and can be designed in plate form aligned at an obliquely inclined angle which takes account of the divergence of the plasma flow. In addition, at least one permanent magnet or electromagnet element is a component of the arrangement.

摘要翻译： 用于在真空条件下将颗粒与等离子体分离以在基板的表面上形成涂层的布置。 等离子体有利地通过电弧放电形成。 等离子体由可以作为阴极连接的靶形成，等离子体的正电荷载体沿着要被涂覆的基板的表面的方向加速，所述至少一个吸收电极连接到正电位的电位， 尊重等离子体。 吸收电极被布置和定向，使得避免了等离子体直接进入吸收器电极，并且可以以考虑到等离子体流的发散度的倾斜倾斜角对准的板形设计。 此外，至少一个永磁体或电磁体元件是该装置的一个部件。

公开(公告)号：US08573153B2

公开(公告)日：2013-11-05

申请号：US12954060

申请日：2010-11-24

申请人： Andreas Fischer ,  William S. Kennedy ,  Peter Loewenhardt ,  David Trussell

发明人： Andreas Fischer ,  William S. Kennedy ,  Peter Loewenhardt ,  David Trussell

IPC分类号： C23C16/00 ,  H01L21/00

CPC分类号： H01J37/32541 ,  H01J37/32009

摘要： An improved upper electrode system has a multi-part electrode in which a central portion of the electrode having high wear is replaceable independent of an outer peripheral portion of the electrode. The upper electrode can be used in plasma processing systems for processing semiconductor substrates, such as by etching or CVD. The multi-part upper electrode system is particularly useful for large size wafer processing chambers, such as 300 mm wafer processing chambers for which monolithic electrodes are unavailable or costly.

摘要翻译： 改进的上电极系统具有多部分电极，其中具有高磨损的电极的中心部分可以独立于电极的外周部分进行替换。 上电极可用于等离子体处理系统中，例如通过蚀刻或CVD来处理半导体衬底。 多部分上电极系统对于大尺寸晶片处理室是特别有用的，例如用于单片电极不可用或成本高的300mm晶片处理室。

公开(公告)号：US08475624B2

公开(公告)日：2013-07-02

申请号：US11697695

申请日：2007-04-06

申请人： Greg Sexton ,  Andrew Bailey, III ,  Alan Schoen

发明人： Greg Sexton ,  Andrew Bailey, III ,  Alan Schoen

IPC分类号： C23F1/00 ,  H01L21/306 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68

CPC分类号： H01L21/02087 ,  B08B7/0035 ,  H01J37/32009 ,  H01J37/3244 ,  H01J37/32706 ,  Y10S134/902

摘要： A plasma etch processing chamber configured to clean a bevel edge of a substrate is provided. The chamber includes a bottom edge electrode and a top edge electrode defined over the bottom edge electrode. The top edge electrode and the bottom edge electrode are configured to generate a cleaning plasma to clean the bevel edge of the substrate. The chamber includes a gas feed defined through a top surface of the processing chamber. The gas feed introduces a processing gas for striking the cleaning plasma at a location in the processing chamber that is between an axis of the substrate and the top edge electrode. A pump out port is defined through the top surface of the chamber and the pump out port located along a center axis of the substrate. A method for cleaning a bevel edge of a substrate is also provided.

摘要翻译： 提供了一种构造成清洁衬底的斜边缘的等离子体蚀刻处理室。 该室包括底边缘电极和限定在底部边缘电极上的顶部边缘电极。 顶边电极和底边电极被配置为产生清洁等离子体以清洁基板的斜边缘。 该室包括通过处理室的顶表面限定的气体进料。 气体进料引入处理气体，用于在位于基板的轴线和顶部边缘电极之间的处理室中的位置处冲击清洁等离子体。 泵出口通过腔室的顶表面和沿着衬底的中心轴线定位的泵出口来限定。 还提供了一种用于清洁基板的斜边缘的方法。

公开(公告)号：US20130126332A1

公开(公告)日：2013-05-23

申请号：US13746193

申请日：2013-01-21

申请人： Foret Plasma Labs, LLC

发明人： Todd Foret

IPC分类号： H01J37/32 ,  C01B3/22

CPC分类号： C10B23/00 ,  B01J19/088 ,  B01J19/126 ,  B01J19/129 ,  B01J19/2405 ,  B01J2219/089 ,  B01J2219/0892 ,  B01J2219/0894 ,  B23K10/00 ,  C01B3/22 ,  C01B3/24 ,  C01B3/342 ,  C01B17/046 ,  C01B17/58 ,  C01B2203/0238 ,  C01B2203/0272 ,  C01B2203/0861 ,  C01F7/066 ,  C01F11/18 ,  C01F11/24 ,  C01F11/46 ,  C04B7/4453 ,  C04B18/04 ,  C10J3/54 ,  C10J3/56 ,  C10J2200/09 ,  C10J2300/093 ,  C10J2300/0943 ,  C10J2300/0946 ,  C10J2300/0956 ,  C10J2300/0959 ,  C10J2300/0969 ,  C10J2300/0973 ,  C10J2300/0983 ,  C10J2300/123 ,  C10J2300/1238 ,  C22B4/005 ,  D21C11/12 ,  H01J37/32009 ,  H05H1/42 ,  H05H1/44 ,  Y02E50/32 ,  Y02P40/121 ,  Y02P40/18 ,  Y02P40/44 ,  Y10S588/90

摘要： An apparatus for synergistically combining a plasma with a comminution means such as a fluid kinetic energy mill (jet mill), preferably in a single reactor and/or in a single process step is provided by the present invention. Within the apparatus of the invention potential energy is converted into kinetic energy and subsequently into angular momentum by means of wave energy, for comminuting, reacting and separation of feed materials. Methods of use of the apparatus in the practice of various processes are also provided by the present invention.