公开(公告)号：US08835959B2

公开(公告)日：2014-09-16

申请号：US13622884

申请日：2012-09-19

Applicant: The Regents of the University of California

Inventor： Shuji Nakamura ,  Steven P. DenBaars ,  Hirokuni Asamizu

IPC: H01L33/00

CPC classification number: H01L33/62 ,  G02B19/0028 ,  G02B19/0061 ,  H01L33/22 ,  H01L33/387 ,  H01L33/54 ,  H01L33/58 ,  H01L33/60 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16245 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/1815 ,  H01L2933/0091 ,  H01L2224/48091 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A transparent light emitting diode (LED) includes a plurality of III-nitride layers, including an active region that emits light, wherein all of the layers except for the active region are transparent for an emission wavelength of the light, such that the light is extracted effectively through all of the layers and in multiple directions through the layers. Moreover, the surface of one or more of the III-nitride layers may be roughened, textured, patterned or shaped to enhance light extraction.

Abstract translation: 透明发光二极管（LED）包括多个III族氮化物层，包括发射光的有源区，除了有源区以外的所有层对于光的发射波长是透明的，使得光是 通过所有层有效提取，并在多个方向通过层提取。 此外，一个或多个III族氮化物层的表面可以被粗糙化，纹理化，图案化或成形以增强光提取。

公开(公告)号：US20140151634A1

公开(公告)日：2014-06-05

申请号：US14174581

申请日：2014-02-06

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Shuji Nakamura ,  Steven P. DenBaars ,  Shinichi Tanaka ,  Daniel F. Feezell ,  Yuji Zhao ,  Chih-Chien Pan

IPC: H01L33/06 ,  H01L33/32 ,  H01L33/00

CPC classification number: H01L33/06 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/0062 ,  H01L33/0075 ,  H01L33/16 ,  H01L33/32

Abstract: A light emitting diode structure of (Al,Ga,In)N thin films grown on a gallium nitride (GaN) semipolar substrate by metal organic chemical vapor deposition (MOCVD) that exhibits reduced droop. The device structure includes a quantum well (QW) active region of two or more periods, n-type superlattice layers (n-SLs) located below the QW active region, and p-type superlattice layers (p-SLs) above the QW active region. The present invention also encompasses a method of fabricating such a device.

Abstract translation: 通过金属有机化学气相沉积（MOCVD）在氮化镓（GaN）半极性衬底上生长的（Al，Ga，In）N薄膜的发光二极管结构，其呈现减小的下垂。 该器件结构包括两个或多个周期的量子阱（QW）有源区，位于QW有源区下面的n型超晶格层（n-SL）以及QW有源区以上的p型超晶格层（p-SL） 地区。 本发明还包括制造这种装置的方法。

公开(公告)号：US20140023102A1

公开(公告)日：2014-01-23

申请号：US13947755

申请日：2013-07-22

Applicant: The Regents of the University of California

Inventor： Casey O. Holder ,  Daniel F. Feezell ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC: H01S5/10 ,  H01S5/183

CPC classification number: H01S5/18355 ,  B82Y20/00 ,  H01S5/005 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/0425 ,  H01S5/0654 ,  H01S5/1039 ,  H01S5/183 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/18369 ,  H01S5/2009 ,  H01S5/209 ,  H01S5/3202 ,  H01S5/34333 ,  H01S5/423 ,  H01S2301/176

Abstract: A III-Nitride based Vertical Cavity Surface Emitting Laser (VCSEL), wherein a cavity length of the VCSEL is controlled by etching.

Abstract translation: 基于III-Nitride的垂直腔表面发射激光器（VCSEL），其中通过蚀刻来控制VCSEL的腔长度。

公开(公告)号：US20130263775A1

公开(公告)日：2013-10-10

申请号：US13860382

申请日：2013-04-10

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Siddha Pimputkar ,  Paul Von Dollen ,  Shuji Nakamura ,  James S. Speck

IPC: C30B7/10 ,  C30B9/10

CPC classification number: C30B7/10 ,  C30B7/105 ,  C30B9/10 ,  C30B29/403 ,  Y10T117/1096

Abstract: A method and apparatus for growing crystals in a reactor vessel, wherein the reactor vessel uses carbon fiber containing materials as a structural element to contain the materials for growing the crystals as a solid, liquid or gas within the reactor vessel, such that the reactor vessel can withstand pressures or temperatures necessary for the growth of the crystals. The carbon fiber containing materials encapsulate at least one component of the reactor vessel, wherein stresses from the encapsulated component are transferred to the carbon fiber containing materials. The carbon fiber containing materials may be wrapped around the encapsulated component one or more times sufficient to maintain a desired pressure differential between an exterior and interior of the encapsulated component.

Abstract translation: 一种用于在反应器容器中生长晶体的方法和装置，其中反应器容器使用含碳纤维的材料作为结构元件，以容纳在反应器容器内作为固体，液体或气体生长晶体的材料，使得反应器容器 可承受晶体生长所需的压力或温度。 含碳纤维的材料包封反应器容器的至少一个组分，其中来自包封的组分的应力被转移到含碳纤维的材料中。 含碳纤维的材料可以围绕包封的组分缠绕一次或多次，足以在包封的组分的外部和内部之间保持所需的压力差。

公开(公告)号：US20130259080A1

公开(公告)日：2013-10-03

申请号：US13904908

申请日：2013-05-29

Applicant: The Regents of the University of California

Inventor： Hiroaki Ohta ,  Feng Wu ,  Anurag Tyagi ,  Arpan Chakraborty ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura ,  Erin C. Young

IPC: H01L33/12 ,  H01S5/34 ,  H01S5/32

CPC classification number: H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/16 ,  H01L33/32 ,  H01S5/2201 ,  H01S5/32 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/3403 ,  H01S5/3425 ,  H01S2301/173

Abstract: An epitaxial structure for a III-Nitride based optical device, comprising an active layer with anisotropic strain on an underlying layer, where a lattice constant and strain in the underlying layer are partially or fully relaxed in at least one direction due to a presence of misfit dislocations, so that the anisotropic strain in the active layer is modulated by the underlying layer.

Abstract translation: 用于基于III-Nitride的光学器件的外延结构，其包括在下层上具有各向异性应变的活性层，其中由于存在失配而使底层中的晶格常数和应变在至少一个方向上部分或完全松弛 位错，使得有源层中的各向异性应变被下层调制。

公开(公告)号：US20130099202A1

公开(公告)日：2013-04-25

申请号：US13659125

申请日：2012-10-24

Applicant: The Regents of the University of California

Inventor： Matthew T. Hardy ,  Shuji Nakamura ,  Steven P. DenBaars ,  James Stephen Speck

IPC: H01L29/15 ,  H01L21/20

CPC classification number: H01L21/02389 ,  B82Y20/00 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02587 ,  H01L21/02609 ,  H01L21/02658 ,  H01L29/2003 ,  H01S5/0014 ,  H01S5/22 ,  H01S5/34333 ,  H01S2304/12

Abstract: An (AlInGaN) based semiconductor device, including one or more (In,Al)GaN layers overlying a semi-polar or non-polar III-nitride substrate or buffer layer, wherein the substrate or buffer employs patterning to influence or control extended defect morphology in layers deposited on the substrate; and one or more (AlInGaN) device layers above and/or below the (In,Al)GaN layers.

Abstract translation: 一种（AlInGaN）半导体器件，包括覆盖半极性或非极性III族氮化物衬底或缓冲层的一个或多个（In，Al）GaN层，其中衬底或缓冲器采用图案化来影响或控制扩展缺陷形态 沉积在基底上的层; 和（In，Al）GaN层之上和/或之下的一个或多个（AlInGaN）器件层。