公开(公告)号：US20090269939A1

公开(公告)日：2009-10-29

申请号：US12395443

申请日：2009-02-27

Applicant: Hessel Sprey

Inventor： Hessel Sprey

IPC: H01L21/316 ,  H01L21/31

CPC classification number: H01L21/31662 ,  C23C8/02 ,  C23C8/10 ,  C23C8/16 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/28247 ,  H01L29/40114

Abstract: Methods for selective oxidation using pulses of an oxidizing agent are described. An oxidation process is provided in which a pulse of an oxidizing agent is followed by a flow of a purging agent. The pulse of the oxidizing agent and the flow of the purging agent forms a cycle that can be repeated to allow for desired oxidation on parts of a structure, e.g., a transistor structure, while preventing or limiting undesired oxidation on other parts of the structure. In addition, during the oxidation, a nitrogen source such as N2, NH3, N2H4 or combinations thereof, can be provided to enhance the selectivity of the oxidation process. The nitrogen source can act as an oxygen scavenger to enhance oxidation selectively, or undesired oxidation can also be further prevented or limited by introducing other oxygen scavengers, such as hydrazine.

Abstract translation: 描述了使用氧化剂脉冲进行选择氧化的方法。 提供氧化工艺，其中氧化剂的脉冲之后是清洗剂的流动。 氧化剂的脉冲和清洗剂的流动形成可以重复的循环，以允许在结构的部分例如晶体管结构上进行期望的氧化，同时防止或限制结构的其它部分上的不期望的氧化。 此外，在氧化过程中，可以提供氮源，例如N 2，NH 3，N 2 H 4或其组合，以增强氧化过程的选择性。 氮源可用作氧清除剂以选择性地增强氧化物，或者还可以通过引入其它除氧剂如肼来进一步防止或限制不期望的氧化。

公开(公告)号：US20090209081A1

公开(公告)日：2009-08-20

申请号：US12340551

申请日：2008-12-19

Applicant: Raija H. MATERO ,  Suvi P. Haukka

Inventor： Raija H. MATERO ,  Suvi P. Haukka

IPC: H01L21/762 ,  H01L21/316

CPC classification number: H01L21/3141 ,  C23C16/401 ,  C23C16/402 ,  C23C16/45525 ,  C23C16/45531 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/0228 ,  H01L21/31608

Abstract: Methods are provided for depositing silicon dioxide containing thin films on a substrate by atomic layer deposition ALD. By using disilane compounds as the silicon source, good deposition rates and uniformity are obtained.

Abstract translation: 提供了通过原子层沉积ALD在衬底上沉积含有二氧化硅的薄膜的方法。 通过使用乙硅烷化合物作为硅源，获得良好的沉积速率和均匀性。

公开(公告)号：US07563715B2

公开(公告)日：2009-07-21

申请号：US11294843

申请日：2005-12-05

Applicant: Suvi Haukka ,  Hannu Huotari

Inventor： Suvi Haukka ,  Hannu Huotari

IPC: H01L21/44

CPC classification number: H01L21/28562 ,  C23C16/34 ,  C23C16/45525 ,  C23C16/45531 ,  C23C16/45542 ,  H01L21/28088 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/6659 ,  H01L29/7833

Abstract: A process for producing metal nitride thin films comprising doping the metal nitride thin films by atomic layer deposition (ALD) with silicon or boron or a combination thereof. The work function of metal nitride thin films, which are used in metal electrode applications, can efficiently be tuned.

Abstract translation: 一种制造金属氮化物薄膜的方法，包括通过原子层沉积（ALD）与硅或硼或其组合掺杂金属氮化物薄膜。 用于金属电极应用的金属氮化物薄膜的功能可以有效调节。

公开(公告)号：US20090070634A1

公开(公告)日：2009-03-12

申请号：US11850941

申请日：2007-09-06

Applicant: Robin A. Stephan

Inventor： Robin A. Stephan

IPC: G06F11/07

CPC classification number: G05B23/0275 ,  G05B23/0286

Abstract: A system and method of automated customizable error diagnostics is provided for use with industrial apparatus, such as semiconductor manufacturing apparatus. An external device, such as a robot, is provided with its own low level controller and a high level controller is provided to send instructions to the low level controller. The high level controller is programmed to perform automated customizable error diagnostics to diagnose errors in the external device. The high level controller monitors the occurrence of error conditions in the external device and executes a list of diagnostic commands based upon a detected error condition. Data concerning the error condition is automatically gathered to diagnose the cause of the error, before the external device executes its own error handling routines. In some embodiments, an editor is provided to edit and customize the diagnostic commands and a viewer is provided to allow diagnostic data to be viewed.

Abstract translation: 提供了一种可自动定制的错误诊断的系统和方法，用于工业设备，如半导体制造设备。 诸如机器人的外部设备设置有其自己的低级控制器，并且提供高级控制器以向低级别控制器发送指令。 高电平控制器被编程为执行自动可定制的错误诊断以诊断外部设备中的错误。 高级别控制器监视外部设备中的错误状况的发生，并根据检测到的错误状况执行诊断命令列表。 在外部设备执行自己的错误处理例程之前，将自动收集有关错误条件的数据，以诊断错误的原因。 在一些实施例中，提供编辑器来编辑和定制诊断命令，并且提供观看者以允许查看诊断数据。

公开(公告)号：US20090068832A1

公开(公告)日：2009-03-12

申请号：US12202132

申请日：2008-08-29

Applicant: Suvi P. Haukka ,  Ivo Raaijmakers ,  Wei Min Li ,  Juhana Kostamo ,  Hessel Sprey ,  Christrian J. Werkhoven

Inventor： Suvi P. Haukka ,  Ivo Raaijmakers ,  Wei Min Li ,  Juhana Kostamo ,  Hessel Sprey ,  Christrian J. Werkhoven

IPC: H01L21/4763

CPC classification number: C23C16/029 ,  C23C16/34 ,  C23C16/401 ,  C23C16/403 ,  C23C16/405 ,  C23C16/452 ,  C23C16/45529 ,  C23C16/45531 ,  C23C16/45534 ,  C30B25/14 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28562 ,  H01L21/3141 ,  H01L21/3145 ,  H01L21/31612 ,  H01L21/3162 ,  H01L21/31641 ,  H01L21/3185 ,  H01L21/76846 ,  H01L21/76873 ,  H01L21/76879 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L2221/1089

Abstract: Thin films are formed by formed by atomic layer deposition, whereby the composition of the film can be varied from monolayer to monolayer during cycles including alternating pulses of self-limiting chemistries. In the illustrated embodiments, varying amounts of impurity sources are introduced during the cyclical process. A graded gate dielectric is thereby provided, even for extremely thin layers. The gate dielectric as thin as 2 nm can be varied from pure silicon oxide to oxynitride to silicon nitride. Similarly, the gate dielectric can be varied from aluminum oxide to mixtures of aluminum oxide and a higher dielectric material (e.g., ZrO2) to pure high k material and back to aluminum oxide. In another embodiment, metal nitride (e.g., WN) is first formed as a barrier for lining dual damascene trenches and vias. During the alternating deposition process, copper can be introduced, e.g., in separate pulses, and the copper source pulses can gradually increase in frequency, forming a transition region, until pure copper is formed at the upper surface. Advantageously, graded compositions in these and a variety of other contexts help to avoid such problems as etch rate control, electromigration and non-ohmic electrical contact that can occur at sharp material interfaces. In some embodiments additional seed layers or additional transition layers are provided.

Abstract translation: 通过原子层沉积形成薄膜，由此膜的组成可以在包括自限制化学的交替脉冲的循环期间从单层变为单层。 在所示实施例中，在循环过程中引入了不同量的杂质源。 因此，即使对于非常薄的层也提供了梯度栅极电介质。 薄的2nm的栅极电介质可以从纯氧化硅到氧氮化物变化为氮化硅。 类似地，栅极电介质可以从氧化铝变化为氧化铝和较高电介质材料（例如，ZrO 2）到纯高k材料并返回到氧化铝的混合物。 在另一个实施例中，金属氮化物（例如，WN）首先形成为用于衬里双镶嵌沟槽和通孔的屏障。 在交替沉积工艺期间，铜可以被引入，例如分开的脉冲，并且铜源脉冲可以逐渐增加频率，形成过渡区域，直到在上表面形成纯铜。 有利的是，这些和各种其他情况下的分级组合物有助于避免诸如在尖锐材料界面处可能发生的蚀刻速率控制，电迁移和非欧姆电接触等问题。 在一些实施例中，提供了额外的种子层或附加的过渡层。

公开(公告)号：US07494927B2

公开(公告)日：2009-02-24

申请号：US10394430

申请日：2003-03-20

Applicant: Juhana Kostamo ,  Pekka J. Soininen ,  Kai-Erik Elers ,  Suvi Haukka

Inventor： Juhana Kostamo ,  Pekka J. Soininen ,  Kai-Erik Elers ,  Suvi Haukka

IPC: H01L21/31 ,  H01L21/44

CPC classification number: H01L21/76843 ,  C23C16/40 ,  C23C16/406 ,  C23C16/408 ,  C23C16/45525 ,  C23C16/56 ,  H01L21/28562 ,  H01L21/3105 ,  H01L21/76861 ,  H01L21/76862 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76886

Abstract: A method for forming a conductive thin film includes depositing a metal oxide thin film on a substrate by an atomic layer deposition (ALD) process. The method further includes at least partially reducing the metal oxide thin film by exposing the metal oxide thin film to a reducing agent, thereby forming a seed layer. In one arrangement, the reducing agent comprises one or more organic compounds that contain at least one functional group selected from the group consisting of —OH, —CHO, and —COOH. In another arrangement, the reducing agent comprises an electric current.

Abstract translation: 形成导电薄膜的方法包括通过原子层沉积（ALD）工艺在基底上沉积金属氧化物薄膜。 该方法还包括通过将金属氧化物薄膜暴露于还原剂中至少部分还原金属氧化物薄膜，从而形成种子层。 在一种布置中，还原剂包含一种或多种含有至少一个选自-OH，-CHO和-COOH的官能团的有机化合物。 在另一种布置中，还原剂包括电流。

公开(公告)号：US07491634B2

公开(公告)日：2009-02-17

申请号：US11414510

申请日：2006-04-28

Applicant: Hannu Huotari ,  Suvi Haukka

Inventor： Hannu Huotari ,  Suvi Haukka

IPC: H01L21/4763

CPC classification number: H01L21/32051 ,  H01L27/10852 ,  H01L28/84 ,  Y10S977/742 ,  Y10S977/773

Abstract: Methods of forming a roughened metal surface on a substrate are provided, along with structures comprising such roughened surfaces. In preferred embodiments roughened surfaces are formed by selectively depositing metal or metal oxide on a substrate surface to form discrete, three-dimensional islands. Selective deposition may be obtained, for example, by modifying process conditions to cause metal agglomeration or by treating the substrate surface to provide a limited number of discontinuous reactive sites. The roughened metal surface may be used, for example, in the manufacture of integrated circuits.

Abstract translation: 提供了在基底上形成粗糙金属表面的方法以及包括这种粗糙表面的结构。 在优选实施例中，通过在衬底表面上选择性地沉积金属或金属氧化物以形成离散的三维岛状体来形成粗糙表面。 可以例如通过改变工艺条件以引起金属聚集或通过处理衬底表面以提供有限数量的不连续反应位点来获得选择性沉积。 粗糙化的金属表面可以用于例如集成电路的制造。

公开(公告)号：US20080241387A1

公开(公告)日：2008-10-02

申请号：US11693588

申请日：2007-03-29

Applicant: Leif R. Keto

Inventor： Leif R. Keto

IPC: C23C16/00

CPC classification number: C23C16/45544 ,  C23C16/452 ,  C23C16/45536 ,  C23C16/45565 ,  H01J37/3244

Abstract: Various reactors for growing thin films on a substrate by subjecting the substrate to alternately repeated surface reactions of vapor-phase reactants are disclosed. The reactor according to the present invention includes a reaction chamber, a substrate holder, a showerhead plate, a first reactant source, a remote radical generator, a second reactant source, and an exhaust outlet. The showerhead plate is configured to define a reaction space between the showerhead plate and the substrate holder. The showerhead plate includes a plurality of passages leading into the reaction space. The substrate is disposed within the reaction space. A first non-radical reactant is supplied through the showerhead plate to the reaction space. The remote radical generator produces the radicals of a second reactant supplied from the second reactant source. The radicals are supplied directly to the reaction space without passing through the showerhead plate.

Abstract translation: 公开了用于通过使衬底经历气相反应物的交替重复表面反应而在衬底上生长薄膜的各种反应器。 根据本发明的反应器包括反应室，基板保持器，喷头板，第一反应物源，远程自由基发生器，第二反应物源和排气出口。 喷头板构造成限定喷头板和衬底保持器之间的反应空间。 喷头板包括通向反应空间的多个通道。 衬底设置在反应空间内。 将第一非自由基反应物通过喷头板供应到反应空间。 远程自发发生器产生从第二反应物源提供的第二反应物的自由基。 自由基直接供应到反应空间，而不通过喷头板。

公开(公告)号：US07426939B2

公开(公告)日：2008-09-23

申请号：US11529847

申请日：2006-09-29

Applicant: Henderikus H. N. J. Jorg

Inventor： Henderikus H. N. J. Jorg

IPC: F16K11/085

CPC classification number: F16K27/0263 ,  F16K11/076 ,  F16K25/005 ,  Y10S438/935 ,  Y10T137/86871

Abstract: A rotatable valve allows the flow of a fluid to be switched between at least two different paths by rotating an element within the valve. Advantageously, both the housing of the valve and the rotatable element within the housing are formed of glass, making the valve resistant to corrosion. The housing has at least three openings for connecting to at least three different conduits. By rotating the rotatable element, a flow path can be created between a first of the conduits and either a second or a third one of the conduits. Thus, the path between the first conduit and the second conduit forms a first path, while the path between the first conduit and the third conduit forms a second path.

Abstract translation: 可旋转阀允许通过旋转阀内的元件在至少两个不同路径之间切换流体的流动。 有利的是，阀壳体和壳体内的可旋转元件都由玻璃形成，使得阀门能够耐腐蚀。 壳体具有至少三个用于连接至少三个不同导管的开口。 通过旋转可旋转元件，可以在第一管道和管道中的第二或第三管道之间产生流动路径。 因此，第一管道和第二管道之间的路径形成第一路径，而第一管道和第三管道之间的路径形成第二路径。

公开(公告)号：US07410666B2

公开(公告)日：2008-08-12

申请号：US11286203

申请日：2005-11-22

Applicant: Kai Elers ,  Wei-Min Li

Inventor： Kai Elers ,  Wei-Min Li

IPC: B05D5/12 ,  C23C16/00 ,  H01L21/44

CPC classification number: C23C16/45534 ,  C23C16/34 ,  C23C16/36 ,  C23C16/45529 ,  C23C16/45531 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76807 ,  H01L21/76838 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76871 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76876 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  Y10T428/24331 ,  H01L2924/00

Abstract: The present methods provide tools for growing conformal metal thin films, including metal nitride, metal carbide and metal nitride carbide thin films. In particular, methods are provided for growing such films from aggressive chemicals. The amount of corrosive chemical compounds, such as hydrogen halides, is reduced during the deposition of transition metal, transition metal carbide, transition metal nitride and transition metal nitride carbide thin films on various surfaces, such as metals and oxides. Getter compounds protect surfaces sensitive to hydrogen halides and ammonium halides, such as aluminum, copper, silicon oxide and the layers being deposited, against corrosion. Nanolaminate structures incorporating metallic thin films, and methods for forming the same, are also disclosed.

Abstract translation: 本方法提供了用于生长适形金属薄膜的工具，包括金属氮化物，金属碳化物和金属氮化碳薄膜。 特别地，提供了用于从侵蚀性化学品生长这样的膜的方法。 过渡金属，过渡金属碳化物，过渡金属氮化物和过渡金属氮化碳薄膜在各种表面如金属和氧化物的沉积过程中，诸如卤化氢等腐蚀性化合物的量减少。 吸气剂保护对卤化氢和卤化铵敏感的表面，如铝，铜，氧化硅和沉积层，以防腐蚀。 还公开了包含金属薄膜的纳米层压结构及其形成方法。