公开(公告)号：US20140179033A1

公开(公告)日：2014-06-26

申请号：US13727237

申请日：2012-12-26

Applicant: INTERMOLECULAR, INC.

Inventor： Monica Mathur ,  Michael Miller ,  Prashant B. Phatak

IPC: H01L21/66

CPC classification number: H01L28/40 ,  C23C14/228 ,  C23C16/45525 ,  H01L22/12 ,  H01L22/14 ,  H01L22/20 ,  H01L29/517

Abstract: Methods of forming layers can comprise defining a plurality of discrete site-isolated regions (SIRs) on a substrate, forming a first layer on one of the discrete SIRs, forming a second layer on the first layer, measuring a lattice parameter or an electrical property of the second layer, The process parameters for the formation of the first layer are varied in a combinatorial manner between different discrete SIRs to explore the possible layers that can result in suitable lattice matching for second layer of a desired crystalline structure.

Abstract translation: 形成层的方法可以包括在衬底上限定多个离散位置隔离区（SIR），在离散SIR之一上形成第一层，在第一层上形成第二层，测量晶格参数或电性质 用于形成第一层的工艺参数以不同离散SIR之间的组合方式变化，以探索可能导致对期望晶体结构的第二层的适当晶格匹配的可能层。

公开(公告)号：US20140178657A1

公开(公告)日：2014-06-26

申请号：US13723954

申请日：2012-12-21

Applicant: INTERMOLECULAR INC.

Inventor： Scott Jewhurst ,  Nikhil Kalyankar

IPC: B32B7/02 ,  B05D5/06

CPC classification number: G02B1/115 ,  C03C17/25 ,  C03C17/30 ,  C03C2217/241 ,  C03C2217/732 ,  C03C2218/113 ,  Y10T428/24942

Abstract: Fluorine-doped antireflection coatings, methods for preparing the coatings and articles comprising the coatings are disclosed. The fluorine-doped antireflection coating comprises a fluorine-doped xerogel coating disposed on a substrate. The index of refraction of the xerogel coating is less than the index of refraction of the substrate, generally between about 1.15 and about 1.45. The fluorine atoms can be distributed uniformly through the thickness of the coating, disposed at the surface of the coating, or the distribution can be graded from the surface through the thickness of the coating. The methods comprise applying a coating precursor solution comprising a sol-gel precursor to a glass substrate, heating the coating to form a xerogel coating, and fluorine-doping the coating. The fluorine-doping can be performed by utilizing a coating precursor solution comprising a first fluorine source, contacting the cured coating with a second fluorine source, or a combination thereof.

Abstract translation: 公开了氟掺杂抗反射涂层，制备涂层的方法和包含涂层的制品。 氟掺杂抗反射涂层包括设置在基底上的掺氟干凝胶涂层。 干凝胶涂层的折射率小于基材的折射率，通常在约1.15至约1.45之间。 氟原子可以均匀地分布在涂层的厚度上，设置在涂层的表面，或者分布可以从表面通过涂层的厚度分级。 所述方法包括将包含溶胶 - 凝胶前体的涂层前体溶液涂覆到玻璃基底上，加热涂层以形成干凝胶涂层，并对该涂层进行氟掺杂。 氟掺杂可以通过利用包含第一氟源的涂覆前体溶液，使固化的涂层与第二氟源接触或其组合来进行。

公开(公告)号：US20140175603A1

公开(公告)日：2014-06-26

申请号：US13722885

申请日：2012-12-20

Applicant: INTERMOLECULAR, INC.

Inventor： Venkat Ananthan ,  Imran Hashim ,  Prashant B. Phatak

IPC: H01L49/02

CPC classification number: H01L27/2418 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2481 ,  H01L28/40 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1633

Abstract: MIMCAP devices are provided that can be suitable for memory device applications, such as current selector devices for cross point memory array. The MIMCAP devices can have lower thermal budget as compared to Schottky diodes and controllable lower barrier height and lower series resistance as compared to MIMCAP tunneling diodes. The MIMCAP diode can include a low defect dielectric layer, a high defect dielectric layer, sandwiched between two electrodes having different work function values.

Abstract translation: 提供了可适用于存储器件应用的MIMCAP器件，例如用于交叉点存储器阵列的电流选择器装置。 与MIMCAP隧道二极管相比，MIMCAP器件与肖特基二极管相比可以具有更低的热量预算，并且可控制的较低势垒高度和较低的串联电阻。 MIMCAP二极管可以包括夹在具有不同功函数值的两个电极之间的低缺陷电介质层，高缺陷电介质层。

公开(公告)号：US20140175422A1

公开(公告)日：2014-06-26

申请号：US13721606

申请日：2012-12-20

Applicant: INTERMOLECULAR, INC.

Inventor： Sergey Barabash ,  Dipankar Pramanik

IPC: H01L21/02 ,  H01L23/58

CPC classification number: C23C16/405 ,  B82Y40/00 ,  C23C16/0272 ,  C30B25/04 ,  C30B29/16 ,  C30B29/60 ,  H01L21/02186 ,  H01L27/0629 ,  H01L27/1233 ,  H01L27/2436 ,  H01L28/40 ,  H01L29/66795 ,  H01L29/785 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/149 ,  H01L2924/0002 ,  Y10S977/811 ,  Y10S977/89 ,  Y10S977/932 ,  H01L2924/00

Abstract: Anisotropic materials, such as rutile TiO2, can exhibit dielectric constant of 170 along the tetragonal axis of (001) direction, and dielectric constant of 86 along directions perpendicular to the tetragonal axis. Layer of anisotropic material nanorods, such as TiO2 nanorods, can form a seed layer to grow a dielectric layer that can exhibit the higher dielectric constant value in a direction parallel to the substrate surface. The anisotropic layer can then be patterned to expose a surface normal to the high dielectric constant direction. A conductive material can be formed in contact with the exposed surface to create an electrode/dielectric stack along the direction of high dielectric constant.

Abstract translation: 各向异性材料，如金红石TiO2，沿（001）方向的四方轴表现介电常数为170，介电常数为86，沿垂直于四方轴的方向。 诸如TiO 2纳米棒的各向异性材料纳米棒的层可以形成种子层以生长在平行于衬底表面的方向上可以表现出更高的介电常数值的电介质层。 然后可以将各向异性层图案化以暴露垂直于高介电常数方向的表面。 可以形成与暴露表面接触的导电材料，以沿着高介电常数的方向产生电极/电介质堆叠。

公开(公告)号：US20140175367A1

公开(公告)日：2014-06-26

申请号：US13722569

申请日：2012-12-20

Applicant: INTERMOLECULAR INC. ,  KABUSHIKI KAISHA TOSHIBA ,  SANDISK 3D LLC

Inventor： Mihir Tendulkar ,  Vidyut Gopal ,  Imran Hashim ,  Tim Minvielle ,  Yun Wang ,  Takeshi Yamaguchi

IPC: H01L45/00

CPC classification number: H01L45/1616 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146

Abstract: Provided are resistive random access memory (ReRAM) cells that include thin resistive switching layers. In some embodiments, the resistive switching layers have a thickness of less than about 50 Angstroms and even less than about 30 Angstroms. The resistive switching characteristics of such thin layers are maintained by controlling their compositions and using particular fabrication techniques. Specifically, low oxygen vacancy metal oxides, such as tantalum oxide, may be used. The concentration of oxygen vacancies may be less than 5 atomic percent. In some embodiments, the resistive switching layers also include nitrogen and. For example, compositions of some specific resistive switching layers may be represented by Ta2O5-XNY, where Y

Abstract translation: 提供了包括薄电阻开关层的电阻随机存取存储器（ReRAM）单元。 在一些实施例中，电阻式开关层的厚度小于约50埃，甚至小于约30埃。 通过控制它们的组成和使用特定的制造技术来维持这种薄层的电阻开关特性。 具体地，可以使用氧化钽等低氧空位金属氧化物。 氧空位的浓度可以小于5原子％。 在一些实施例中，电阻式开关层还包括氮和。 例如，一些特定电阻开关层的组成可以由Ta 2 O 5-X N Y表示，其中Y <（X-0.01）。 电阻开关层可以使用原子层沉积（ALD）形成。

公开(公告)号：US20140175362A1

公开(公告)日：2014-06-26

申请号：US13721450

申请日：2012-12-20

Applicant: Intermolecular Inc. ,  Kabushiki Kaisha Toshiba ,  SanDisk 3D LLC

Inventor： Mihir Tendulkar ,  Imran Hashim ,  Tim Minvielle ,  Yun Wang ,  Takeshi Yamaguchi

IPC: H01L45/00

CPC classification number: H01L45/1253 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/146 ,  H01L45/1616 ,  H01L45/1625

Abstract: Provided are ReRAM cells, each having at least one interface between an electrode and a resistive switching layers with a maximum field value of less than 0.25. The electrode materials forming such interfaces include tantalum nitrides doped with lanthanum, aluminum, erbium yttrium, or terbium (e.g., TaX(Dopant)YN, where X is at least about 0.95). The electrode materials have low work functions (e.g., less than about 4.5 eV). At the same time, the resistive switching materials have high relative dielectric permittivities (e.g., greater than about 30) and high electron affinities (greater than about for 3.5 eV). Niobium oxide is one example of a suitable resistive switching material. Another electrode interfacing the resistive switching layer may have different characteristics and, in some embodiments, may be an inert electrode.

Abstract translation: 提供的是ReRAM单元，每个单元在电极和电阻切换层之间具有至少一个界面，其最大场值小于0.25。 形成这种界面的电极材料包括掺杂有镧，铝，铒钇或铽的钽氮化物（例如TaX（掺杂剂）YN，其中X为至少约0.95）。 电极材料具有低功函数（例如小于约4.5eV）。 同时，电阻式开关材料具有较高的相对介电常数（例如大于约30）和高电子亲和力（大于3.5eV）。 氧化铌是合适的电阻式开关材料的一个例子。 连接电阻式开关层的另一电极可以具有不同的特性，并且在一些实施例中可以是惰性电极。

公开(公告)号：US20140174921A1

公开(公告)日：2014-06-26

申请号：US13725622

申请日：2012-12-21

Applicant: INTERMOLECULAR, INC.

Inventor： Hong Sheng Yang ,  Chi-I Lang ,  ShouQian Shao

IPC: C23C14/35

CPC classification number: C23C14/351 ,  C23C14/3407 ,  C23C14/352 ,  C23C14/54 ,  H01J37/3405 ,  H01J37/3426 ,  H01J37/3429 ,  H01J37/3452 ,  H01J37/3455 ,  H01J37/3458

Abstract: An apparatus for sputtering wherein magnets within the magnetron of a sputtering source are positioned such that Ar+ ions arriving at the surface of a multi-piece target do not strike the target perpendicular to the surface at the gaps between the sectors of the target. The off-angle bombardment of the Ar+ ions ensures that the Ar+ ions do not result in the sputtering and deposition of target backing material through the gap between the target sectors.

Abstract translation: 一种用于溅射的设备，其中溅射源的磁控管内的磁体被定位成使得到达多件式靶的表面的Ar +离子在目标的扇区之间的间隙处不垂直于表面撞击靶。 Ar +离子的偏角轰击确保Ar +离子不会导致目标背衬材料通过目标部分之间的间隙的溅射和沉积。

公开(公告)号：US20140170434A1

公开(公告)日：2014-06-19

申请号：US13715709

申请日：2012-12-14

Applicant: INTERMOLECULAR INC.

Inventor： Mohd Fadzli Anwar Hassan ,  Brent Boyce ,  Guowen Ding ,  Minh Huu Le ,  Zhi-Wen Wen Sun ,  Yu Wang ,  Yongli Xu

IPC: G02B1/10

CPC classification number: G02B1/10 ,  Y10T428/12056 ,  Y10T428/12611

Abstract: Two layer silver process comprising a silver layer deposited on a doped silver layer can improve the adhesion of the silver layer on a substrate, minimizing agglomeration to provide a high quality silver layer. The doped silver layer can comprise silver and a doping element that has lower enthalpy of formation with oxide than that of silver, leading to better bonding with oxygen in the substrate.

Abstract translation: 包含沉积在掺杂银层上的银层的双层银方法可以改善银层在基片上的附着力，最小化附聚以提供高质量的银层。 掺杂的银层可以包含银和掺杂元素，其掺杂元素具有比银更低的氧化物形成焓，导致与衬底中的氧更好的结合。

公开(公告)号：US20140169062A1

公开(公告)日：2014-06-19

申请号：US13714173

申请日：2012-12-13

Applicant: INTERMOLECULAR, INC.

Inventor： Mankoo Lee ,  Tony Chiang ,  Dipankar Pramanik

IPC: G11C13/00

CPC classification number: G11C13/0033 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/003 ,  G11C13/0069 ,  G11C2213/72 ,  G11C2213/76 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/2436 ,  H01L27/2454 ,  H01L29/785 ,  H01L29/868 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146

Abstract: Non linear current response circuits can be used in embedded resistive memory cell for reducing power consumption, together with improving reliability of the memory array. The non linear current response circuits can include two back to back leaky PIN diodes, two parallel anti-directional PIN diodes, two back to back Zener-type metal oxide diodes, or ovonic switching elements, along with current limiting resistor for standby power reduction at the low voltage region. Also, the proposed embedded ReRAM implementation methods based upon 1T2D1R scheme can be integrated into the advanced FEOL process technologies including vertical pillar transistor and/or 3D fin-shaped field effect transistor (FinFET) for realizing a highly compact cell density.

Abstract translation: 非线性电流响应电路可用于嵌入式电阻式存储单元，以降低功耗，同时提高存储器阵列的可靠性。 非线性电流响应电路可以包括两个背靠背泄漏的PIN二极管，两个并联的反向PIN二极管，两个背靠背的齐纳二极型金属氧化物二极管或者二极管开关元件，以及用于待机功率降低的限流电阻 低电压区域。 此外，所提出的基于1T2D1R方案的嵌入式ReRAM实现方法可以集成到先进的FEOL工艺技术中，包括用于实现高度紧凑的单元密度的立柱晶体管和/或3D鳍状场效应晶体管（FinFET）。

公开(公告)号：US20140166958A1

公开(公告)日：2014-06-19

申请号：US13719051

申请日：2012-12-18

Applicant: INTERMOLECULAR, INC.

Inventor： Sergey Barabash ,  Charlene Chen ,  Dipankar Pramanik

IPC: H01L45/00

CPC classification number: H01L45/1616 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1641

Abstract: An internal electrical field in a resistive memory element can be formed to reduce the forming voltage. The internal electric field can be formed by incorporating one or more charged layers within the switching dielectric layer of the resistive memory element. The charged layers can include adjacent charge layers to form dipole layers. The charged layers can be formed at or near the interface of the switching dielectric layer with an electrode layer. Further, the charged layer can be oriented with lower valence substitution side towards lower work function electrode, and higher valence substitution side towards higher work function electrode.

Abstract translation: 可以形成电阻式存储元件中的内部电场以降低成形电压。 可以通过在电阻式存储元件的开关电介质层内并入一个或多个带电层来形成内部电场。 带电层可以包括相邻的电荷层以形成偶极层。 带电层可以在开关电介质层的界面处或附近形成电极层。 此外，带电层可以朝向较低功函电极的较低价取代面取向，而朝较高功函电极取向较高的取代价。