Abstract:
Over voltage protection is provided for electronic circuits by disposing one or more ground bars for diverting harmful currents away from the sensitive electronic circuit elements. The ground bars are each associated with a row of contact portions of the electronic circuit. Microgaps between each contact portion and the corresponding ground bar are designed to provide an electrical conduit from the contact portion to the ground bar when normal operating voltages are exceeded, thereby channeling excess current harmlessly to ground. Under normal operating conditions, however, the microgaps act as electrical barriers, insulating the contact portions from ground. The microgaps may be filled with any combination of air, vacuum, or known variable voltage material.
Abstract:
A variable voltage protection component in accordance with this invention comprises a reinforcing layer of insulating material having a substantially constant thickness embedded in a voltage variable material. With this configuration, the reinforcing layer defines a uniform thickness for the variable voltage protection component that is resist to compressive forces that may cause a reduction in the clamp voltage or a short in the voltage variable material. In addition, the variable voltage protection component can be attached to a compressible ground plane to form a variable voltage protection device. Methods are provided for making the variable voltage protection component and device.
Abstract:
A variable voltage protection component is provided with a reinforcing layer of insulating material having a substantially constant thickness embedded in a voltage variable material. The reinforcing layer defines a uniform thickness for the variable voltage protection component that is resistant to compressive forces that may cause a reduction in the clamp voltage or a short in the voltage variable material. In addition, the variable voltage protection device component can be attached to a compressible ground plane to form a variable voltage protection device.
Abstract:
To provide a zinc oxide-based varistor that exhibits adequate characteristics without using antimony. Disclosed is a sintered body for a varistor, including zinc oxide as a main component; 0.6 to 3.0 mol % of bismuth oxide in terms of bismuth (Bi); 0.2 to 1.4 mol % of cobalt oxide in terms of cobalt (Co); 0.1 to 1.5 mol % of chrome oxide in terms of chrome (Cr); and 0.1 to 1.5 mol % of manganese oxide in terms of manganese (Mn), wherein the contents of antimony (Sb), a rare earth element and tin (Sn) are not more than a level of impurities.
Abstract:
Provided herein are improved electrical circuit protection devices for protection against electrostatic discharge (ESD), the devices including a first support substrate, a first electrode and a second electrode formed on the first support substrate, wherein the first electrode and the second electrode are formed from a conductive material. The devices further include a first bonding pad disposed on the first and second electrode, the first bonding pad having a first cavity formed therein; a second support substrate disposed on the first bonding pad, the second support substrate having a second cavity formed therein, and a voltage variable material disposed within the first cavity and the second cavity and electrically connected to the first electrode and the second electrode. The devices further include a second bonding pad disposed on the second support substrate, and a third support substrate disposed on the second bonding pad.
Abstract:
Printed circuit boards including voltage switchable dielectric materials (VSDM) are disclosed. The VSDMs are used to protect electronic components, arranged on or embedded in printed circuit boards, against electric discharges, such as electrostatic discharges or electric overstresses. During an overvoltage event, a VSDM layer shunts excess currents to ground, thereby preventing electronic components from destruction or damage.
Abstract:
A method comprises providing a voltage switchable dielectric material having a characteristic voltage, exposing the voltage switchable dielectric material to a source of ions associated with an electrically conductive material, and creating a voltage difference between the source and the voltage switchable dielectric material that is greater than the characteristic voltage. Electrical current is allowed to flow from the voltage switchable dielectric material, and the electrically conductive material is deposited on the voltage switchable dielectric material. A body comprises a voltage switchable dielectric material and a conductive material deposited on the voltage switchable dielectric material using an electrochemical process. In some cases, the conductive material is deposited using electroplating.
Abstract:
A multi-layer semiconductor element package structure with surge protection function includes a substrate unit, an insulated unit, a one-way conduction unit and a protection unit. The substrate unit has at least one top substrate, at least one middle substrate and at least one bottom substrate. The insulated unit has at least one first insulated layer filled between the top substrate and the middle substrate and at least one second insulated layer filled between the middle substrate and the bottom substrate. The one-way conduction unit has a plurality of one-way conduction elements electrically disposed between the top substrate and the middle substrate and enclosed by the first insulated layer. The protection unit has at least one protection element with anti surge current or anti surge voltage function electrically disposed between the middle substrate and the bottom substrate and enclosed by the second insulated layer.
Abstract:
Systems and methods for protecting electrical components such as light emitting diodes are described. In some embodiments, electrical components are protected from high level electrostatic discharge (“ESD”) events by a circuit board that provides an intrinsic level of ESD protection. At the same time, such electrical components are protected against low level ESD events by one or more diodes that are electrically coupled thereto. The one or more diodes may be thin film diodes comprising at least one layer of p-type semiconductive material and at least one layer of n-type semiconductive material. Devices including ESD protection and methods for manufacturing such devices are also described.
Abstract:
Various aspects provide for incorporating a VSDM into a substrate to create an ESD-protected substrate. In some cases, a VSDM is incorporated in a manner that results in the ESD-protected substrate meeting one or more specifications (e.g., thickness, planarity, and the like) for various subsequent processes or applications. Various aspects provide for designing a substrate (e.g., a PCB) incorporating a VSDM, and adjusting one or more aspects of the substrate to design a balanced, ESD-protected substrate. Certain embodiments include molding a substrate having a VSDM layer into a first shape.