公开(公告)号：US09666677B1

公开(公告)日：2017-05-30

申请号：US14580693

申请日：2014-12-23

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring ,  Melvin McLaurin ,  Alexander Sztein ,  Po Shan Hsu

IPC: H01L21/00 ,  H01L29/205 ,  H01L33/00 ,  H01L33/40 ,  H01L33/06 ,  H01S5/40 ,  H01S5/343 ,  H01S5/22 ,  H01S5/02 ,  H01L29/66 ,  H01S5/042 ,  H01L29/40 ,  H01L29/45 ,  H01L29/47 ,  H01L29/20 ,  H01L29/201 ,  H01L27/088 ,  H01L27/15 ,  H01L27/06 ,  H01L21/02 ,  H01L21/683 ,  H01L21/311

CPC classification number: H01L29/205 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/311 ,  H01L21/6835 ,  H01L25/167 ,  H01L27/0629 ,  H01L27/0676 ,  H01L27/088 ,  H01L27/15 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/402 ,  H01L29/452 ,  H01L29/475 ,  H01L29/66136 ,  H01L29/66143 ,  H01L29/66318 ,  H01L29/66462 ,  H01L29/66916 ,  H01L33/0025 ,  H01L33/0066 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/40 ,  H01L2224/18 ,  H01L2933/0016 ,  H01S5/0201 ,  H01S5/0213 ,  H01S5/0215 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/3202 ,  H01S5/32341 ,  H01S5/34333 ,  H01S5/4025 ,  H01S2301/173

Abstract: A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.

公开(公告)号：US09653642B1

公开(公告)日：2017-05-16

申请号：US15209309

申请日：2016-07-13

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring ,  Melvin McLaurin ,  Alexander Sztein ,  Po Shan Hsu

IPC: H01L21/00 ,  H01L33/00 ,  H01L33/32 ,  H01L27/12

CPC classification number: H01L29/205 ,  H01L21/02458 ,  H01L21/311 ,  H01L21/6835 ,  H01L24/00 ,  H01L27/0629 ,  H01L27/0676 ,  H01L27/088 ,  H01L27/1255 ,  H01L27/1259 ,  H01L27/15 ,  H01L29/2003 ,  H01L29/66136 ,  H01L29/66143 ,  H01L29/66318 ,  H01L29/66462 ,  H01L29/66916 ,  H01L33/0025 ,  H01L33/0066 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/32 ,  H01S5/0203 ,  H01S5/0217 ,  H01S5/227 ,  H01S5/34333

Abstract: A method for manufacturing a display panel comprising light emitting device including micro LEDs includes providing multiple donor wafers having a surface region and forming an epitaxial material overlying the surface region. The epitaxial material includes an n-type region, an active region comprising at least one light emitting layer overlying the n-type region, and a p-type region overlying the active layer region. The multiple donor wafers are configured to emit different color emissions. The epitaxial material on the multiple donor wafers is patterned to form a plurality of dice, characterized by a first pitch between a pair of dice less than a design width. At least some of the dice are selectively transferred from the multiple donor wafers to a common carrier wafer such that the carrier wafer is configured with different color emitting LEDs. The different color LEDs could comprise red-green-blue LEDs to form a RGB display panel.

公开(公告)号：US09640949B1

公开(公告)日：2017-05-02

申请号：US14742297

申请日：2015-06-17

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring ,  Hua Huang

IPC: H01S5/00 ,  H01S5/343 ,  H01S5/022 ,  H01S5/22 ,  H01S5/32 ,  H01S5/10

CPC classification number: H01S5/34333 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01S5/0014 ,  H01S5/0042 ,  H01S5/0202 ,  H01S5/0203 ,  H01S5/0224 ,  H01S5/02268 ,  H01S5/02276 ,  H01S5/1082 ,  H01S5/22 ,  H01S5/3013 ,  H01S5/3202 ,  H01S5/32341 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Gallium and nitrogen containing optical devices operable as laser diodes are disclosed. The devices include a gallium and nitrogen containing substrate member, which may be semipolar or non-polar. The devices include a chip formed from the gallium and nitrogen substrate member. The chip has a width and a length. The devices have a cavity oriented substantially parallel to the length of the chip, a dimension of less than 120 microns characterizing the width of the chip, and a pair of etched facets configured on the cavity of the chip. The pair of etched facets includes a first facet configured at a first end of the cavity and a second facet configured at a second end of the cavity.

公开(公告)号：US20170051884A1

公开(公告)日：2017-02-23

申请号：US15160873

申请日：2016-05-20

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring ,  Paul Rudy ,  Eric Goutain ,  Troy Trottier ,  Melvin McLaurin ,  James Harrison

IPC: F21K99/00 ,  H01S5/022 ,  H01S5/024 ,  H01S5/22 ,  H01S5/40 ,  F21V29/70 ,  H01S5/042 ,  H01S5/323

CPC classification number: H01S5/02469 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/49175 ,  H01S5/02212 ,  H01S5/02236 ,  H01S5/02438 ,  H01S5/22 ,  H01S5/32341 ,  H01S5/4025 ,  H01L2924/00014

Abstract: The embodiments described herein provide a device and method for an integrated white colored electromagnetic radiation source using a combination of laser diode excitation sources based on gallium and nitrogen containing materials and light emitting source based on phosphor materials. A violet, blue, or other wavelength laser diode source based on gallium and nitrogen materials may be closely integrated with phosphor materials, such as yellow phosphors, to form a compact, high-brightness, and highly-efficient, white light source.

Abstract translation: 本文描述的实施例提供了使用基于含镓和氮的材料的激光二极管激发源和基于磷光体材料的发光源的组合的集成白色电磁辐射源的装置和方法。 基于镓和氮材料的紫色，蓝色或其他波长激光二极管源可以与诸如黄色荧光体的磷光体材料紧密集成，以形成紧凑的高亮度和高效率的白色光源。

公开(公告)号：US09564736B1

公开(公告)日：2017-02-07

申请号：US14315687

申请日：2014-06-26

Applicant: Soraa Laser Diode, Inc.

Inventor： Po Shan Hsu ,  Melvin McLaurin ,  Thiago P. Melo ,  James W. Raring

IPC: H01S5/20 ,  H01S5/22 ,  H01S5/32

CPC classification number: H01S5/34333 ,  H01S5/0425 ,  H01S5/20 ,  H01S5/2031 ,  H01S5/22 ,  H01S5/2201 ,  H01S5/222 ,  H01S5/3063 ,  H01S5/3086 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/3214 ,  H01S5/3215 ,  H01S5/3216 ,  H01S5/3218 ,  H01S5/3219 ,  H01S5/34346 ,  H01S2304/02 ,  H01S2304/04

Abstract: In an example, the present invention provides a method for fabricating a light emitting device configured as a Group III-nitride based laser device. The method also includes forming a gallium containing epitaxial material overlying the surface region of a substrate member. The method includes forming a p-type (Al,In,Ga)N waveguiding material overlying the gallium containing epitaxial material under a predetermined process condition. The method includes maintaining the predetermined process condition such that an environment surrounding a growth of the p-type (Al,In,Ga)N waveguide material is substantially a molecular N2 rich gas environment. The method includes maintaining a temperature ranging from 725 C to 925 C during the formation of the p-type (Al,In,Ga)N waveguide material, although there may be variations. In an example, the predetermined process condition is substantially free from molecular H2 gas.

Abstract translation: 在一个实例中，本发明提供一种制造被配置为III族氮化物的激光器件的发光器件的方法。 该方法还包括形成覆盖衬底构件的表面区域的含镓外延材料。 该方法包括在预定工艺条件下形成覆盖含镓外延材料的p型（Al，In，Ga）N波导材料。 该方法包括维持预定的工艺条件，使得围绕p型（Al，In，Ga）N波导材料的生长的环境基本上是分子N2富含气体环境。 该方法包括在形成p型（Al，In，Ga）N波导材料期间保持725℃至925℃的温度，尽管可能存在变化。 在一个实例中，预定的工艺条件基本上不含分子H2气体。

公开(公告)号：US09520695B2

公开(公告)日：2016-12-13

申请号：US14480398

申请日：2014-09-08

Applicant: Soraa Laser Diode, Inc.

Inventor： Po Shan Hsu ,  Melvin McLaurin ,  James W. Raring ,  Alexander Stzein ,  Benyamin Buller

IPC: H01L21/00 ,  H01S5/02 ,  H01S5/042 ,  H01S5/22 ,  H01S5/343

CPC classification number: H01S5/34333 ,  H01S5/0202 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/0425 ,  H01S5/22 ,  H01S2304/00

Abstract: In an example, the present invention provides a method for fabricating a laser diode device. The method includes providing a gallium and nitrogen containing substrate member comprising a surface region, a release material overlying the surface region, an n-type gallium and nitrogen containing material; an active region overlying the n-type gallium and nitrogen containing material, a p-type gallium and nitrogen containing material; and a first transparent conductive oxide material overlying the p-type gallium and nitrogen containing material, and an interface region overlying the first transparent conductive oxide material. The method includes bonding the interface region to a handle substrate and subjecting the release material to an energy source to initiate release of the gallium and nitrogen containing substrate member.

Abstract translation: 在一个实例中，本发明提供一种制造激光二极管器件的方法。 该方法包括提供包含表面区域，覆盖表面区域的剥离材料，含n型镓和氮的材料的含镓和氮的衬底构件; 覆盖n型含镓和氮的材料的有源区，p型含镓和氮的材料; 以及覆盖所述p型含镓和氮的材料的第一透明导电氧化物材料以及覆盖所述第一透明导电氧化物材料的界面区域。 该方法包括将界面区域粘合到手柄基板上，并将释放材料经受能量源以引发含镓和氮的衬底构件的释放。

公开(公告)号：US20160315450A1

公开(公告)日：2016-10-27

申请号：US15095825

申请日：2016-04-11

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring ,  Paul Rudy ,  Eric Hall

IPC: H01S5/10 ,  H01S5/028 ,  H01S5/042 ,  H01S5/343 ,  H01S5/22

CPC classification number: H01S5/1096 ,  B82Y20/00 ,  H01S5/02236 ,  H01S5/028 ,  H01S5/0425 ,  H01S5/1039 ,  H01S5/22 ,  H01S5/2201 ,  H01S5/3063 ,  H01S5/3202 ,  H01S5/34326 ,  H01S5/34333 ,  H01S5/4087 ,  H01S2304/02 ,  H01S2304/04

Abstract: A system and method for providing laser diodes emitting multiple wavelengths is described. Multiple wavelengths and/or colors of laser output are obtained by having multiple laser devices, each emitting a different wavelength, packaged onto the same substrate. In other embodiments, multiple laser devices having different wavelengths are formed from the same substrate.

Abstract translation: 描述了提供发射多个波长的激光二极管的系统和方法。 激光输出的多个波长和/或颜色通过将多个激光器件发射不同的波长，封装在相同的衬底上来获得。 在其它实施例中，具有不同波长的多个激光器件由相同的衬底形成。

公开(公告)号：US09401584B1

公开(公告)日：2016-07-26

申请号：US14931743

申请日：2015-11-03

Applicant: Soraa Laser Diode, Inc.

Inventor： Melvin McLaurin ,  Alexander Sztein ,  Po Shan Hsu ,  James W. Raring

IPC: H01L29/20 ,  H01L21/20 ,  H01S5/00 ,  H01S5/22 ,  H01S5/343 ,  H01S5/042 ,  H01S5/02 ,  H01S5/028 ,  H01L23/00 ,  H01L33/50

CPC classification number: H01S5/34333 ,  H01L24/29 ,  H01L29/2003 ,  H01L33/16 ,  H01L33/50 ,  H01S5/00 ,  H01S5/0202 ,  H01S5/0206 ,  H01S5/0215 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2201 ,  H01S5/3202

Abstract: In an example, the present invention provides a gallium and nitrogen containing multilayered structure, and related method. The structure has a plurality of gallium and nitrogen containing semiconductor substrates, each of the gallium and nitrogen containing semiconductor substrates (“substrates”) having a plurality of epitaxially grown layers overlaying a top-side of each of the substrates. The structure has an orientation of a reference crystal direction for each of the substrates. The structure has a first handle substrate coupled to each of the substrates such that each of the substrates is aligned to a spatial region configured in a selected direction of the first handle substrate, which has a larger spatial region than a sum of a total backside region of plurality of the substrates to be arranged in a tiled configuration overlying the first handle substrate. The reference crystal direction for each of the substrates is parallel to the spatial region in the selected direction within 10 degrees or less. The structure has a first bonding medium provided between the first handle substrate and each of the substrate while maintaining the alignment between reference crystal orientation and the selected direction of the first handle substrate; and a processed region formed overlying each of the substrates configured concurrently while being bonded to the first handle substrate. Depending upon the embodiment, the processed region can include any combination of the aforementioned processing steps and/or steps.

Abstract translation: 在一个实例中，本发明提供一种含镓和氮的多层结构及相关方法。 该结构具有多个含镓和氮的半导体衬底，每个含镓和氮的半导体衬底（“衬底”）具有覆盖每个衬底的顶侧的多个外延生长层。 该结构对于每个基板具有参考晶体方向的取向。 该结构具有耦合到每个基板的第一手柄基板，使得每个基板与沿第一手柄基板的选定方向配置的空间区域对齐，该空间区域具有比总背面区域 多个基板被布置成覆盖在第一手柄基板上的平铺构造。 每个基板的参考晶体方向在10度以内平行于选定方向的空间区域。 该结构具有第一接合介质，其设置在第一手柄基板和每个基板之间，同时保持参考晶体取向与第一手柄基板的选定方向之间的对准; 以及被形成为覆盖在被结合到第一手柄基板的同时构成的每个基板的处理区域。 根据实施例，经处理的区域可以包括上述处理步骤和/或步骤的任何组合。

公开(公告)号：US09362720B1

公开(公告)日：2016-06-07

申请号：US14793339

申请日：2015-07-07

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring ,  Mathew C. Schmidt ,  Yu-Chia Chang

IPC: H01S5/343 ,  H01S5/042 ,  H01S5/20 ,  H01S5/065

CPC classification number: H01S5/0427 ,  B82Y20/00 ,  H01L33/0045 ,  H01L33/06 ,  H01S5/0425 ,  H01S5/0651 ,  H01S5/0652 ,  H01S5/2031 ,  H01S5/22 ,  H01S5/3202 ,  H01S5/34 ,  H01S5/3407 ,  H01S5/3414 ,  H01S5/34333 ,  H01S5/405 ,  H01S5/4087 ,  H01S2301/02

Abstract: A system and method for providing laser diodes with broad spectrum is described. GaN-based laser diodes with broad or multi-peaked spectral output operating are obtained in various configurations by having a single laser diode device generating multiple-peak spectral outputs, operate in superluminescene mode, or by use of an RF source and/or a feedback signal. In some other embodiments, multi-peak outputs are achieved by having multiple laser devices output different lasers at different wavelengths.

公开(公告)号：US09362715B2

公开(公告)日：2016-06-07

申请号：US14176403

申请日：2014-02-10

Applicant: Soraa Laser Diode, Inc.

Inventor： Alexander Sztein ,  Melvin McLaurin ,  Po Shan Hsu ,  James W. Raring

IPC: H01L21/00 ,  H01S5/02 ,  H01S5/022 ,  H01S5/32 ,  H01S5/343

CPC classification number: H01S5/0203 ,  H01S5/0202 ,  H01S5/0205 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/3202 ,  H01S5/34333 ,  H01S5/34346

Abstract: In an example, the present invention provides a method for manufacturing a gallium and nitrogen containing laser diode device. The method includes providing a gallium and nitrogen containing substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising of at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The method includes patterning the epitaxial material to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. The method includes transferring each of the plurality of dice to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch corresponding to the design width.

Abstract translation: 在一个实例中，本发明提供一种制造含镓和氮的激光二极管器件的方法。 该方法包括提供具有表面区域并形成覆盖在表面区域上的外延材料的含镓和氮的衬底，所述外延材料包括n型包层区域，有源区域包括覆盖在n型包层上的至少一个有源层 区域和覆盖有源层区域的p型覆层区域。 该方法包括图案化外延材料以形成多个骰子，每个骰子对应于至少一个激光装置，其特征在于一对骰子之间的第一间距，第一间距小于设计宽度。 该方法包括将多个骰子中的每一个转移到载体晶片，使得每对骰子在每对骰子之间配置有第二间距，第二间距大于对应于设计宽度的第一间距。