公开(公告)号：US06713790B2

公开(公告)日：2004-03-30

申请号：US10212799

申请日：2002-08-07

Applicant: Akira Asai ,  Teruhito Oonishi ,  Takeshi Takagi ,  Tohru Saitoh ,  Yoshihiro Hara ,  Koichiro Yuki ,  Katsuya Nozawa ,  Yoshihiko Kanzawa ,  Koji Katayama ,  Yo Ichikawa

Inventor： Akira Asai ,  Teruhito Oonishi ,  Takeshi Takagi ,  Tohru Saitoh ,  Yoshihiro Hara ,  Koichiro Yuki ,  Katsuya Nozawa ,  Yoshihiko Kanzawa ,  Koji Katayama ,  Yo Ichikawa

IPC: H01L31072

CPC classification number: H01L29/66242 ,  H01L21/763 ,  H01L21/8249 ,  H01L27/0623 ,  H01L29/7378

Abstract: In the method for fabricating a semiconductor device of the present invention, a collector layer of a first conductivity type is formed in a region of a semiconductor substrate sandwiched by device isolation. A collector opening is formed through a first insulating layer deposited on the semiconductor substrate so that the range of the collector opening covers the collector layer and part of the device isolation. A semiconductor layer of a second conductivity type as an external base is formed on a portion of the semiconductor substrate located inside the collector opening, while junction leak prevention layers of the same conductivity type as the external base are formed in the semiconductor substrate. Thus, the active region is narrower than the collector opening reducing the transistor area, while minimizing junction leak.

Abstract translation: 在本发明的半导体装置的制造方法中，在被器件分离夹持的半导体基板的区域中形成有第一导电型的集电极层。 通过沉积在半导体衬底上的第一绝缘层形成集电极开口，使得集电极开口的范围覆盖集电极层和器件隔离的一部分。 在位于集电体开口内部的半导体基板的一部分上形成作为外部基底的第二导电类型的半导体层，同时在半导体衬底中形成与外部基底相同的导电类型的防漏层。 因此，有源区域比集电极开口窄，减小晶体管面积，同时最小化结漏电。

公开(公告)号：US06674150B2

公开(公告)日：2004-01-06

申请号：US10127579

申请日：2002-04-23

Applicant: Takeshi Takagi ,  Koichiro Yuki ,  Kenji Toyoda ,  Yoshihiko Kanzawa

Inventor： Takeshi Takagi ,  Koichiro Yuki ,  Kenji Toyoda ,  Yoshihiko Kanzawa

IPC: H01L27082

CPC classification number: H01L29/7378 ,  H01L29/161 ,  H01L29/66242

Abstract: A heterojunction bipolar transistor is fabricated by stacking a Si collector layer, a SiGeC base layer and a Si emitter layer in this order. By making the amount of a lattice strain in the SiGeC base layer on the Si collector layer 1.0% or less, the band gap can be narrower than the band gap of the conventional practical SiGe (the Ge content is about 10%), and good crystalline can be maintained after a heat treatment. As a result, a narrow band gap base with no practical inconvenience can be realized.

公开(公告)号：US06471238B2

公开(公告)日：2002-10-29

申请号：US09542471

申请日：2000-04-04

Applicant: Toshihiro Ishikawa ,  Takeshi Takagi ,  Kazunori Etou ,  Akinori Koyama ,  Kouichi Ishida

Inventor： Toshihiro Ishikawa ,  Takeshi Takagi ,  Kazunori Etou ,  Akinori Koyama ,  Kouichi Ishida

IPC: B60R2120

CPC classification number: B60R21/237 ,  B60R21/21656 ,  B60R21/2171 ,  B60R21/2346

Abstract: An air-bag 12 is designed to vertically expand after transversely expanding while being inflated. The air-bag 12 having a substantially circular shape is folded from its opposite ends toward its middle along a direction “a” corresponding to vertical direction and rolled in an opposite direction, is then folded in a zigzag manner one fold over another from its opposite ends toward its middle along a direction “b” (transverse direction), and is accommodated in a container casing 14. Accordingly, the inventive air-bag device and air-bag folding method can suppress an inflation (expansion) of the air-bag toward a passenger at an early stage of the inflation of the air-bag, promote a transverse expansion more than a vertical expansion of the air-bag at the early stage of the inflation, and prevent a blow out of a gas toward the passenger.

Abstract translation: 气袋12被设计成在膨胀后横向膨胀后垂直膨胀。 具有大致圆形形状的气囊12沿着相对于垂直方向的方向“a”的相反端部向其中间折叠并沿相反方向卷绕，然后以相对的方式从另一方折叠成另一折叠的Z字形方式 沿着方向“b”（横向）朝向中间端部，并容纳在容器壳体14中。因此，本发明的气囊装置和安全气囊折叠方法可以抑制气囊的膨胀（膨胀） 在气囊通货膨胀的早期阶段向乘客敞开，在通货膨胀的初期，促使横向膨胀超过气囊的垂直膨胀，并防止向乘客吹气。

公开(公告)号：US06277657B1

公开(公告)日：2001-08-21

申请号：US09530926

申请日：2000-05-08

Applicant: Katsuya Nozawa ,  Minoru Kubo ,  Tohru Saitoh ,  Takeshi Takagi

Inventor： Katsuya Nozawa ,  Minoru Kubo ,  Tohru Saitoh ,  Takeshi Takagi

IPC: H01L2100

CPC classification number: C30B29/06 ,  C23C16/481 ,  C23C16/52 ,  C30B25/14 ,  C30B25/165 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02658

Abstract: A crystal growing apparatus comprises a vacuum vessel, a heating lamp, a lamp controller for controlling the heating lamp, a gas inlet port, a flow rate adjuster for adjusting the flow rate of a gas, a pyrometer for measuring the temperature of a substrate, and a gas supply unit for supplying a Si2H6 gas or the like to the vacuum vessel. An apparatus for ellipsometric measurement comprises: a light source, a polariscope, a modulator, an analyzer, a spectroscope/detector unit, and an analysis control unit for calculating &PSgr;, &Dgr;. In removing a chemical oxide film on the substrate therefrom, in-situ ellipsometric measurement allows a discrimination between a phase 1 during which a surface of the substrate is covered with the oxide film and a phase 2 during which the surface of the substrate is partially exposed so that the supply of gas suitable for the individual phases is performed and halted.

Abstract translation: 晶体生长装置包括真空容器，加热灯，用于控制加热灯的灯控制器，气体入口端口，用于调节气体流量的流量调节器，用于测量基板温度的高温计， 以及用于向真空容器供给Si 2 H 6气体等的气体供给单元。 用于椭圆测量的装置包括：光源，偏振器，调制器，分析器，分光计/检测器单元和用于计算＆amp; EDG的分析控制单元。 在从基板上除去化学氧化物膜的同时，原位椭圆测量可以区分衬底的表面被氧化膜覆盖的相1和衬底的表面部分露出的相2 使得适合于各个相的气体供应被执行和停止。

公开(公告)号：USD275805S

公开(公告)日：1984-10-02

申请号：US437467

申请日：1982-10-28

Applicant: Keiji Kuribayashi ,  Takeshi Takagi

Designer： Keiji Kuribayashi ,  Takeshi Takagi

公开(公告)号：USD248579S

公开(公告)日：1978-07-18

申请号：US755096

申请日：1976-12-28

Applicant: Akio Gotoh ,  Takeshi Takagi ,  Kuniharu Ichikawa ,  Shinji Yamamoto

Designer： Akio Gotoh ,  Takeshi Takagi ,  Kuniharu Ichikawa ,  Shinji Yamamoto

公开(公告)号：US4017886A

公开(公告)日：1977-04-12

申请号：US578174

申请日：1975-05-16

Applicant: Masami Tomono ,  Akira Abe ,  Seiki Harada ,  Kikuji Sato ,  Takeshi Takagi ,  Genichi Kamoshita ,  Yuichiro Oya ,  Atsushi Saiki

Inventor： Masami Tomono ,  Akira Abe ,  Seiki Harada ,  Kikuji Sato ,  Takeshi Takagi ,  Genichi Kamoshita ,  Yuichiro Oya ,  Atsushi Saiki

IPC: H01L21/00 ,  H01L21/312 ,  H01L21/60 ,  H01L21/607 ,  H01L23/29 ,  H01L23/485 ,  H01L23/532 ,  H01L23/30

CPC classification number: H01L24/85 ,  H01L21/00 ,  H01L21/312 ,  H01L23/29 ,  H01L23/485 ,  H01L23/5329 ,  H01L24/03 ,  H01L24/05 ,  H01L24/48 ,  H01L2224/0345 ,  H01L2224/04042 ,  H01L2224/05548 ,  H01L2224/05556 ,  H01L2224/05558 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/05671 ,  H01L2224/0568 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/4807 ,  H01L2224/4845 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48666 ,  H01L2224/48669 ,  H01L2224/48671 ,  H01L2224/4868 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48766 ,  H01L2224/48769 ,  H01L2224/48771 ,  H01L2224/4878 ,  H01L2224/85205 ,  H01L2224/85424 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01016 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0106 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/12044 ,  H01L2924/30105

Abstract: Disclosed is a discrete semiconductor device comprising a Si body having an emitter region, a base region and a collector region, an SiO.sub.2 layer disposed on the surface of the body, a polyimide resin having a thickness of 5 .mu. disposed on the SiO.sub.2 layer, electrodes penetrating through the SiO.sub.2 layer and the polyimide resin thereby contacting the emitter region and the base region, respectively and extending on the surface of the polyimide resin, whereby it becomes easy to bond a wire connected to an external electrode with the electrodes.

Abstract translation: 公开了一种分立半导体器件，其包括具有发射极区域，基极区域和集电极区域的Si体，设置在主体表面上的SiO 2层，设置在SiO 2层上的厚度为5μm的聚酰亚胺树脂，电极 穿透SiO 2层和聚酰亚胺树脂，从而分别与发射极区域和基极区域接触，并且在聚酰亚胺树脂的表面上延伸，从而容易将与外部电极连接的电线与电极接合。

公开(公告)号：US09429579B2

公开(公告)日：2016-08-30

申请号：US12311175

申请日：2007-09-20

Applicant: Koji Sugiyama ,  Tatsuo Kamata ,  Takeshi Takagi

Inventor： Koji Sugiyama ,  Tatsuo Kamata ,  Takeshi Takagi

IPC: G01N33/00 ,  G01N35/00 ,  G01N33/66 ,  G01N33/72 ,  G01N35/02 ,  A61B5/145 ,  G01N30/88

CPC classification number: G01N33/66 ,  A61B5/14532 ,  G01N33/723 ,  G01N35/026 ,  G01N2030/8822 ,  G01N2800/042

Abstract: The present invention relates to a blood analysis apparatus X for measuring concentrations of glucose and glycohemoglobin in blood. The blood analysis apparatus X is configured to perform the concentration measurement of the glucose and the glycohemoglobin by one sampling of blood 13. The blood analysis apparatus X is preferably configured to simultaneously carry out sample preparations for concentration measurement of the glucose and the glycohemoglobin by one sample preparation. The blood analysis apparatus X may be configured to perform dilution of a blood sample for measuring the glycohemoglobin and dilution of a blood sample for measuring the glucose using the same diluent.

Abstract translation: 血液分析装置技术领域本发明涉及用于测定血液中葡萄糖和糖血红蛋白浓度的血液分析装置X. 血液分析装置X构成为通过血液13的一次取样来进行葡萄糖和糖血红蛋白的浓度测定。血液分析装置X优选同时进行葡萄糖和糖血红蛋白的浓度测定用样品制剂1 样品制备。 血液分析装置X可以被配置为执行用于测量糖血红蛋白的血液样品的稀释和用于使用相同的稀释剂测量葡萄糖的血液样品的稀释。

公开(公告)号：US09236381B2

公开(公告)日：2016-01-12

申请号：US12307032

申请日：2007-10-24

Applicant: Satoru Fujii ,  Takeshi Takagi ,  Shunsaku Muraoka ,  Koichi Osano ,  Kazuhiko Shimakawa

Inventor： Satoru Fujii ,  Takeshi Takagi ,  Shunsaku Muraoka ,  Koichi Osano ,  Kazuhiko Shimakawa

IPC: H01L47/00 ,  H01L27/10 ,  G11C13/00 ,  H01L27/24 ,  H01L45/00

CPC classification number: H01L27/101 ,  G11C13/0007 ,  G11C2213/32 ,  G11C2213/34 ,  G11C2213/71 ,  G11C2213/72 ,  G11C2213/79 ,  H01L27/2418 ,  H01L27/2436 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1625

Abstract: A nonvolatile memory element of the present invention comprises a first electrode (103), a second electrode (105), and a resistance variable layer (104) disposed between the first electrode (103) and the second electrode (104), a resistance value of the resistance variable layer varying reversibly according to an electric signal applied between the electrodes (103), (105), and the resistance variable layer (104) comprises at least a tantalum oxide, and is configured to satisfy 0

Abstract translation: 本发明的非易失性存储元件包括第一电极（103），第二电极（105）和设置在第一电极（103）和第二电极（104）之间的电阻变化层（104），电阻值 根据施加在电极（103），（105）和电阻变化层（104）之间的电信号可逆地改变的电阻变化层至少包括氧化钽，并且被配置为满足0

公开(公告)号：US09006793B2

公开(公告)日：2015-04-14

申请号：US13382321

申请日：2011-06-29

Applicant: Zhiqiang Wei ,  Takeshi Takagi ,  Mitsuteru Iijima

Inventor： Zhiqiang Wei ,  Takeshi Takagi ,  Mitsuteru Iijima

IPC: H01L27/115 ,  H01L21/8247 ,  H01L27/24 ,  H01L45/00 ,  G11C13/00

CPC classification number: H01L27/2409 ,  G11C13/0007 ,  G11C2213/71 ,  G11C2213/72 ,  H01L27/249 ,  H01L45/08 ,  H01L45/1226 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1633

Abstract: A stacking structure in which a stacked body (21) including a first conductive layer (13), a semiconductor layer (17), and a second conductive layer (18) and an interlayer insulating film (16) are alternately stacked in parallel to a substrate, a plurality of columnar electrodes (12) arranged so as to penetrated through the stacking structure in a stacking direction, a variable resistance layer (14) which is disposed between the columnar electrode (12) and the first conductive layer (13) and which has a resistance value that reversibly changes according to an application of an electric signal are included. The variable resistance layer (14) is formed by oxidizing part of the first conductive layer (13). The variable resistance layer (14) and an insulating film for electrically separating the semiconductor layer (17) and the second conductive layer (18) from the columnar electrode (12) are simultaneously formed in a single oxidation process.

Abstract translation: 层叠结构，其中包括第一导电层（13），半导体层（17）和第二导电层（18）和层间绝缘膜（16）的层叠体（21）与 基板，多个柱状电极（12），被布置成沿堆叠方向穿过堆叠结构，设置在柱状电极（12）和第一导电层（13）之间的可变电阻层（14）和 其具有根据电信号的应用可逆地改变的电阻值。 可变电阻层（14）通过氧化第一导电层（13）的一部分而形成。 在单次氧化过程中同时形成可变电阻层（14）和用于将半导体层（17）和第二导电层（18）与柱状电极（12）电分离的绝缘膜。