公开(公告)号：US20230260747A1

公开(公告)日：2023-08-17

申请号：US18108420

申请日：2023-02-10

Applicant: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.

Inventor： Tetsuya Kudo

IPC: H01J37/317 ,  H01J37/147 ,  H01J37/20 ,  H01J37/304

CPC classification number: H01J37/3171 ,  H01J37/20 ,  H01J37/304 ,  H01J37/1474 ,  H01J2237/2007 ,  H01J2237/24535

Abstract: Provided is an ion implanter or the like capable of shortening a replacement time of workpieces. An ion implantation method includes (a) deflecting an ion beam by at least one of an electric field and a magnetic field in an irradiation-disabled direction in which a wafer is incapable of being irradiated with the ion beam after a first wafer is irradiated with the ion beam directed in an irradiation-enabled direction in which the wafer is capable of being irradiated with the ion beam; (b) moving the first wafer from an ion implantation position, subsequently to the step (a); (e) disposing a second wafer different from the first wafer at the ion implantation position, subsequently to the step (b); and (f) returning the ion beam from the irradiation-disabled direction to the irradiation-enabled direction, subsequently to the step (e).

公开(公告)号：US20230260741A1

公开(公告)日：2023-08-17

申请号：US18108429

申请日：2023-02-10

Applicant: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.

Inventor： Tetsuya Kudo ,  Akihiro Ochi ,  Shinji Ebisu

IPC: H01J37/20 ,  H01J37/317 ,  H01J37/147 ,  H01J37/04

CPC classification number: H01J37/20 ,  H01J37/3171 ,  H01J37/1475 ,  H01J37/045 ,  H01J2237/20214 ,  H01J2237/20228 ,  H01J2237/24564 ,  H01J2237/2007 ,  H01J37/09

Abstract: The ion implantation method includes (a) moving a wafer adjusted to have a first implantation angle with respect to an ion beam from a beam irradiation range toward a beam non-irradiation range; (b) starting a change of the wafer from the first implantation angle to a second implantation angle while the wafer is moved within the beam non-irradiation range after the wafer having the first implantation angle is moved from the beam irradiation range; (c-1) reversing a movement direction of the wafer at an end of the beam non-irradiation range and moving the wafer toward the beam irradiation range; and (c-2) completing the change of the wafer from the first implantation angle to the second implantation angle while the wafer is moved within the beam non-irradiation range before the wafer is returned to the beam irradiation range.

公开(公告)号：US20230257869A1

公开(公告)日：2023-08-17

申请号：US18013124

申请日：2020-10-22

Applicant: QORVO BIOTECHNOLOGIES, LLC

Inventor： Derya Deniz ,  Philip Johnston ,  Jay Helland ,  John Belsick ,  Kevin McCarron

IPC: C23C14/56 ,  H03H3/02 ,  H03H9/17 ,  H01J37/34 ,  H01J37/32 ,  C23C14/54 ,  C23C14/50 ,  C23C14/35 ,  C23C14/02 ,  C23C14/22 ,  C30B23/00 ,  C30B23/06

CPC classification number: C23C14/566 ,  H03H3/02 ,  H03H9/173 ,  H03H9/175 ,  H01J37/3447 ,  H01J37/32899 ,  H01J37/32743 ,  H01J37/32458 ,  H01J37/3417 ,  H01J37/3405 ,  C23C14/568 ,  C23C14/541 ,  C23C14/50 ,  C23C14/35 ,  C23C14/02 ,  C23C14/225 ,  C30B23/005 ,  C30B23/063 ,  H03H2003/021 ,  H03H2003/025 ,  H01J2237/20285 ,  H01J2237/332 ,  H01J2237/2001 ,  H01J2237/2002 ,  H01J2237/20235 ,  H01J2237/20214 ,  H01J2237/201 ,  H01J2237/2007 ,  H01J2237/0455

Abstract: A deposition system is disclosed that allows for growth of inclined c-axis piezoelectric material structures. The system integrates various sputtering modules to yield high quality films and is designed to optimize throughput lending it to a high-volume in manufacturing environment. The system includes two or more process modules including an off-axis module constructed to deposit material at an inclined c-axis and a longitudinal module constructed to deposit material at normal incidence; a central wafer transfer unit including a load lock, a vacuum chamber, and a robot disposed within the vacuum chamber and constructed to transfer a wafer substrate between the central wafer transfer unit and the two or more process modules; and a control unit operatively connected to the robot.

公开(公告)号：US20230238225A1

公开(公告)日：2023-07-27

申请号：US18187805

申请日：2023-03-22

Applicant: Tokyo Electron Limited

Inventor： Shoichiro MATSUYAMA

IPC: H01J37/32 ,  H02N13/00

CPC classification number: H01J37/32715 ,  H01J37/3244 ,  H02N13/00 ,  H01J2237/334 ,  H01J2237/2007

Abstract: A method of attracting an object to a mounting table is provided. The object is a substrate, an edge ring, or a combination of the substrate and the edge ring. The mounting table is provided with an electrostatic chuck including electrodes. After the object is placed on the electrostatic chuck, n-phase alternating current (AC) voltages (n≥2) are applied to the electrodes. Each phase voltage of the n-phase AC voltages has a phase different from each other, and the phase voltage of the n-phase AC voltages is applied based on a self-bias voltage of the object.

公开(公告)号：US20230223291A1

公开(公告)日：2023-07-13

申请号：US18048967

申请日：2022-10-24

Applicant: NGK Insulators, Ltd.

Inventor： Seiya INOUE ,  Tatsuya KUNO ,  Natsuki HIRATA

IPC: H01L21/683 ,  H01J37/32

CPC classification number: H01L21/6833 ,  H01J37/32724 ,  H01J37/3244 ,  H01J2237/2007

Abstract: A member for semiconductor manufacturing apparatus includes a ceramic plate that has an upper surface including a wafer placement surface and resin porous plugs that have upper surfaces that are exposed from the wafer placement surface. The resin porous plugs are press-fitted and secured in plug insertion holes that extend through the ceramic plate in an up-down direction and allow gas to flow.

公开(公告)号：US20230215706A1

公开(公告)日：2023-07-06

申请号：US18148078

申请日：2022-12-29

Applicant: SEMES CO., LTD.

Inventor： Yoon Seok CHOI ,  Hyun Woo JO ,  Sang Jeong LEE ,  Jong Won PARK ,  Hyoung Kyu SON

IPC: H01J37/32 ,  H01L21/687 ,  H01L21/683

CPC classification number: H01J37/32715 ,  H01J37/32642 ,  H01L21/68742 ,  H01L21/6833 ,  H01J2237/20235 ,  H01J2237/2007 ,  H01J2237/002 ,  H01J2237/334

Abstract: The inventive concept provides a substrate support unit. The substrate support unit includes a susceptor supporting the substrate and having a pinhole formed vertically; and a lift pin unit configured to load and unload the substrate on the susceptor, and wherein the lift pin unit includes: a lift pin vertically movable along the pinhole; a support vertically movable by a driving unit; a pin holder connecting the support and the lift pin, and wherein the lift pin is pivotably connected to the pin holder and the pin holder is laterally movable with respect to the support.

公开(公告)号：US20230215690A1

公开(公告)日：2023-07-06

申请号：US17566904

申请日：2021-12-31

Applicant: FEI Company

Inventor： Christopher THOMPSON ,  Dustin ELLIS ,  Adam STOKES ,  Ronald KELLEY ,  Cedric BOUCHET-MARQUIS

IPC: H01J37/305 ,  H01J37/20 ,  H01J37/28 ,  H01J37/244

CPC classification number: H01J37/3056 ,  H01J37/20 ,  H01J37/28 ,  H01J37/244 ,  H01J2237/31749 ,  H01J2237/2007 ,  H01J2237/208 ,  H01J2237/31745

Abstract: Methods and systems for creating attachments between a sample manipulator and a sample within a charged particle systems are disclosed herein. Methods include translating a sample manipulator so that it is proximate to a sample, and milling portions of the sample manipulator such that portions are removed. The portion of the sample manipulator proximate to the sample is composed of a high sputter yield material, and the high sputter yield material may be the material milled with the charged particle beam such that it is removed from the sample manipulator. According to the present disclosure, the portions of the sample manipulator are milled such that at least some of the removed high sputter yield material redeposits to form an attachment between the sample manipulator and the sample.

公开(公告)号：US20230207289A1

公开(公告)日：2023-06-29

申请号：US18147790

申请日：2022-12-29

Applicant: SEMES CO., LTD.

Inventor： Jun Seok PARK ,  Jong Joon JEON ,  Chul Ho JUNG

IPC: H01J37/32 ,  H01L21/683

CPC classification number: H01J37/32724 ,  H01L21/6833 ,  H01J2237/2007 ,  H01J2237/334

Abstract: An electrostatic chuck of the present invention includes a top block and a bottom block bonded by a bonding layer. The top block has a first plate on which a chucking electrode and a heater are installed, and the bottom block is provided with a cooling member. A second plate made of a material having lower heat transfer rate than the first plate is disposed between the first plate and the bottom block. Accordingly, when the heater is heated at a high temperature, it is possible to prevent the bonding layer from being damaged by thermal impact.

公开(公告)号：US20230178405A1

公开(公告)日：2023-06-08

申请号：US17543150

申请日：2021-12-06

Applicant: Applied Materials, Inc.

Inventor： Scott E. Peitzsch ,  Robert Mitchell

IPC: H01L21/683 ,  H01J37/20 ,  H01J37/317

CPC classification number: H01L21/6833 ,  H01J37/20 ,  H01J37/3171 ,  H01J2237/2007 ,  H01J2237/20214 ,  H01J2237/0473 ,  H01J2237/002

Abstract: A system and method for controlling electrostatic clamping of multiple platens on a spinning disk is disclosed. The system comprises a semiconductor processing system, such as a high energy implantation system. The semiconductor processing system produces a spot ion beam, which is directed to a plurality of workpieces, which are disposed on a spinning disk. The spinning disk comprises a rotating central hub with a plurality of platens. The plurality of platens may extend outward from the central hub and workpieces are electrostatically clamped to the platens. The central hub provides the electrostatic clamping voltages to each of the plurality of platens. Further, the plurality of platens may also be capable of rotation about an axis orthogonal to the rotation axis of the central hub. The central hub controls the rotation of each of the platens. Power connections and communications are provided to the central hub via the spindle assembly.

公开(公告)号：US20230173557A1

公开(公告)日：2023-06-08

申请号：US17906368

申请日：2021-03-03

Applicant: Tokyo Electron Limited

Inventor： Koichi NAKAJIMA ,  Satoshi CHIDA ,  Satoshi CHINO

IPC: B08B7/00 ,  H01J37/32 ,  H01L21/3205 ,  H01L21/683 ,  C23C16/458 ,  C23C16/44 ,  C23C16/06 ,  C23C16/509

CPC classification number: B08B7/0035 ,  H01J37/32715 ,  H01J37/32082 ,  H01L21/32051 ,  H01L21/6831 ,  C23C16/4586 ,  C23C16/4405 ,  C23C16/06 ,  C23C16/509 ,  H01J2237/335 ,  H01J2237/3321 ,  H01J2237/2007

Abstract: A cleaning method according to one aspect of the present disclosure which cleans an electrostatic chuck includes exposing the electrostatic chuck to plasma and maintaining a relationship between a potential of the electrostatic chuck and a potential of the plasma such that electron current is introduced from the plasma toward the electrostatic chuck.