Abstract:
One aspect of the invention relates to a power semiconductor device in lead frame technology and a method for producing the same. The power semiconductor device has a vertical current path through a power semiconductor chip. The power semiconductor chip has at least one large-area electrode on its top side and a large-area electrode on its rear side. The rear side electrode is surface-mounted on a lead frame chip island of a lead frame and the top side electrode is electrically connected to an internal lead of the lead frame via a connecting element. The connecting element has an electrically conductive film on a surface facing the top side electrode, the electrically conductive film extending from the top side electrode to the internal lead.
Abstract:
Composite with a first part composed of a thermoset material and with a second part composed of a thermoplastic material, and with an adhesion-promoter layer located between these, where the first part has been bonded by way of the adhesion-promoter layer to the second part, and where the adhesion-promoter layer comprises pyrolytically deposited semiconductor oxides and/or pyrolytically deposited metal oxides.
Abstract:
Semiconductor component and method for production of a semiconductor component. The invention relates to a semiconductor component having a semiconductor chip, which is arranged on a substrate, in one embodiment on a chip carrier, and an encapsulation material, which at least partially surrounds the semiconductor chip. The chip carrier is at least partly provided with a layer of polymer foam.
Abstract:
A component arrangement comprising a carrier, a component in a housing with electrical contacts and a moulding compound that encloses the carrier, the semiconductor component in the housing and the electrical contacts, wherein the component is applied on the carrier, and wherein the carrier is provided with holes, and a method for producing a component arrangement, wherein the carrier is provided with holes, the component is positioned on the carrier, the component is connected to the carrier, the component with the carrier is positioned in the leadframe, and this arrangement is enclosed by a moulding compound.
Abstract:
An electronic module includes a component housing and at least one semiconductor chip. The semiconductor chip is arranged on a circuit carrier in the component housing. The semiconductor chip is connected to an upper face of the circuit carrier via connection elements. In this case, the semiconductor chip, the connection elements and, partially, the circuit carrier are embedded in a plastic housing compound. A metal plate which is structured into lead interconnects and contact connecting pads is provided on the upper face of the component housing.
Abstract:
A semiconductor chip has at least one first contact and one second contact on its top side and has connecting elements which are arranged jointly on a structure element and which connect the first contact and the second contact of the top side of the semiconductor chip to the external contacts.
Abstract:
Composite with a first part composed of a thermoset material and with a second part composed of a thermoplastic material, and with an adhesion-promoter layer located between these, where the first part has been bonded by way of the adhesion-promoter layer to the second part, and where the adhesion-promoter layer comprises pyrolytically deposited semiconductor oxides and/or pyrolytically deposited metal oxides.
Abstract:
A lead structure for a semiconductor component includes: external leads for external connections outside a plastic housing composition, internal leads for electrical connections within the plastic housing composition, and a chip mounting island composed of the lead material. While leaving free contact pads of the internal leads, the top sides of the chip mounting island and the internal leads are equipped with nanotubes as an anchoring layer. The plastic housing composition is arranged in the interspaces between the nanotubes arranged on the internal leads, while an adhesive composition for the semiconductor chip is arranged in the interspaces between the nanotubes arranged on the chip mounting island. The adhesive composition and the plastic housing composition fill the interspaces in a manner free of voids.
Abstract:
A circuit arrangement includes a component or an integrated circuit firmly attached on a wiring carrier via an adhesive layer. Furthermore, a pyrolytically deposited adhesion promoter layer with high surface energy and/or high porosity in the nanometer range is selectively provided on a metallic adherend location of the wiring carrier.
Abstract:
The invention relates to a semiconductor module comprising stacked discrete components and a method for producing the same. In one embodiment, the semiconductor module has a semiconductor chip arranged on a wiring substrate. The discrete components are arranged and wired on an intermediate carrier, which is electrically connected to the wiring substrate and/or the semiconductor chip. The wiring substrate carries the semiconductor chip, the semiconductor chip carries the intermediate carrier and the intermediate carrier carries the discrete components.