Abstract:
A semiconductor package module having no solder balls and a method of manufacturing the semiconductor package module are provided. The semiconductor package module includes a module board on which a plurality of semiconductor devices are able to be mounted, a semiconductor package bonded on the module board using an adhesive, being wire-bondable to the module board, and having already undergone an electrical final test, second wires electrically connecting second bond pads of the semiconductor package to bond pads of the module board; and a third sealing resin enclosing the second wires and the semiconductor package. Because the semiconductor package module does not use solder balls, degradation of solder joint reliability (SJR) can be prevented. Further, the use of a semiconductor package that has already undergone an electrical test can reduce degradation of the yield of a completed semiconductor package module.
Abstract:
Aspects of the subject matter described herein relate to a packaged semiconductor die which becomes a component of a finished multi-chip package. The packaged semiconductor die comprises a die substrate, a semiconductor package, and a sealant. The die substrate includes an insulating substrate and a circuit pattern formed on the insulating substrate. The semiconductor package has a semiconductor chip electrically coupled to the circuit pattern that is a known good package and is coupled to the die substrate. The sealant seals the semiconductor package. The packaged semiconductor die utilizes a known good package which has passed a series of package tests.
Abstract:
A chip stack package includes a plurality of chips that are stacked by using adhesive layers as intermediary media, and a through via electrode formed through the chips to electrically couple the chips. The through via electrode is classified as a power supply through via electrode, a ground through via electrode, or a signal transfer through via electrode. The power supply through via electrode and the ground through via electrode are formed of a first material such as copper, and the signal transfer through via electrode is formed of second material such as polycrystalline silicon doped with impurities. The signal transfer through via electrode may have a diametrically smaller cross section than that of each of the power supply through via electrode and the ground through via electrode regardless of their resistivities.
Abstract:
A semiconductor package which can be stacked to form a package stack that includes a semiconductor chip with bonding pads, a board having contact pads on its upper surface and bump pads on its lower surface, a heat spreader attached to the rear side of the semiconductor chip and covering the upper surface of the board, and external contact terminals including ground terminals and signal terminals formed on the bump pads. The contact pads of the board include ground contact pads connected with the ground terminals and signal contact pads connected with the signal terminals. The heat spreader includes indented parts to expose the signal contact pads and protruded parts to cover the ground contact pads which are exposed through holes formed on the protruded parts on the peripheral part of the heat spreader. The semiconductor package can alternatively have the heat spreader attached to the lower surface of the board.
Abstract:
A chip stack may include a first chip and a second chip stacked on the first chip. Each of the first and second chips may include a substrate having an active surface and an inactive surface opposite to the active surface; an internal circuit in the active surface; an I/O chip pad on the active surface and connected to the internal circuit through an I/O buffer; and a I/O connection pad connected to the I/O chip pad through the I/O buffer by a circuit wiring. A redistributed I/O chip pad layer may be on the active surface of the first chip, the redistributed I/O chip pad layer redistributing the I/O chip pad. The I/O connection pads of the first chip and the second chip may be electrically connected to each other by an electrical connecting part.
Abstract:
A semiconductor device package includes a substrate, first and second chip pads spaced apart over a surface of the substrate, and an insulating layer located over the surface of the substrate. The insulating layer includes a stepped upper surface defined by at least a lower reference potential line support surface portion, and an upper signal line support surface portion, where a thickness of the insulating layer at the lower reference potential line support surface portion is less than a thickness of the insulating layer at the upper signal line support surface portion. The package further includes a conductive reference potential line electrically connected to the first chip pad and located on the lower reference potential support surface portion of the insulating layer, a conductive signal line electrically connected to the second chip pad and located on the upper signal line support surface portion, and first and second external terminals electrically connected to the conductive reference potential line and the conductive signal line, respectively.
Abstract:
Provided are semiconductor devices and methods for configuring lead frames and/or device bonding pads to provide for the independent adjustment of the electrical characteristics of both fixed voltage lines, e.g., Vdd and Vss, and the signal lines, e.g., command, clock, data and address. In particular, the invention provides for adjusting the relative sizing of leads corresponding to fixed voltage lines and signal lines for increasing the relative capacitance on the fixed voltage lines to improve their stability will reducing the noise on the signal lines. The invention may be utilized with a variety of package configurations including lead-on-chip LOC configurations, more conventional quad flat pack QFP configurations in which the leads do not extend past the perimeter of the semiconductor chip or hybrid configurations in which some leads do extend past the perimeter of the semiconductor chip and across the active surface.
Abstract:
A package-on-package (PoP)-type package includes a first semiconductor package having a first passive element and a first semiconductor device mounted on a first substrate, and a second semiconductor package having a second semiconductor device mounted on a second substrate. The first passive element is electrically connected to the second semiconductor device. Related devices are also discussed.
Abstract:
A package-on-package (PoP)-type package includes a first semiconductor package having a first passive element and a first semiconductor device mounted on a first substrate, and a second semiconductor package having a second semiconductor device mounted on a second substrate. The first passive element is electrically connected to the second semiconductor device. Related devices are also discussed.
Abstract:
A semiconductor package, comprising: a substrate; a first semiconductor chip; and at least one second semiconductor chip. The first semiconductor chip and the at least one second semiconductor chip are stacked on the substrate; the first semiconductor chip is electrically connected with the substrate; and an electrical connection of each second semiconductor chip is formed through a secondary input/output buffer of the first semiconductor chip.