利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

54 条记录 (耗时 0.017 秒)

    PVD SPUTTERING TARGET WITH A PROTECTED BACKING PLATE
    11.
    发明申请
    PVD SPUTTERING TARGET WITH A PROTECTED BACKING PLATE 有权
    带有保护背板的PVD溅射目标

    公开(公告)号：US20120199469A1

    公开(公告)日：2012-08-09

    申请号：US13024198

    申请日：2011-02-09

    申请人： Muhammad M. RASHEED ,  Rongjun WANG

    发明人： Muhammad M. RASHEED ,  Rongjun WANG

    IPC分类号： C23C14/14 ,  C23C14/34

    CPC分类号： C23C14/3407 ,  C22C9/00 ,  C22C9/04 ,  C22C19/03 ,  C23C14/3414 ,  H01J37/3426 ,  H01J37/3435

    摘要： Embodiments of the invention provide sputtering targets utilized in physical vapor deposition (PVD) and methods to form such sputtering targets. In one embodiment, a sputtering target contains a target layer disposed on a backing plate, and a protective coating layer—usually containing a nickel material—covering and protecting a region of the backing plate that would otherwise be exposed to plasma during the PVD processes. In many examples, the target layer contains a nickel-platinum alloy, the backing plate contains a copper alloy (e.g., copper-zinc), and the protective coating layer contains metallic nickel. The protective coating layer eliminates the formation of highly conductive, copper contaminants typically derived by plasma erosion of the copper alloy contained within the exposed surfaces of the backing plate. Therefore, the substrates and the interior surfaces of the PVD chamber remain free of such copper contaminants during the PVD processes.

    摘要翻译： 本发明的实施例提供了用于物理气相沉积（PVD）的溅射靶和形成这种溅射靶的方法。 在一个实施例中，溅射靶包含设置在背板上的目标层和通常包含镍材料覆盖层并保护背衬板的区域的保护涂层，否则在PVD工艺期间将暴露于等离子体的区域。 在许多实施例中，靶层含有镍 - 铂合金，背板含有铜合金（例如铜 - 锌），保护涂层含有金属镍。 保护涂层消除了形成高度导电的铜污染物，通常由包含在背板的暴露表面内的铜合金的等离子体侵蚀导致。 因此，在PVD工艺期间，PVD室的基板和内表面保持没有这种铜污染物。

    PROCESS KIT SHIELD FOR IMPROVED PARTICLE REDUCTION
    12.
    发明申请
    PROCESS KIT SHIELD FOR IMPROVED PARTICLE REDUCTION 有权
    用于改善颗粒减少的工艺套件

    公开(公告)号：US20110278165A1

    公开(公告)日：2011-11-17

    申请号：US13106392

    申请日：2011-05-12

    申请人： MUHAMMAD RASHEED ,  RONGJUN WANG ,  ZHENDONG LIU ,  XINYU FU ,  XIANMIN TANG

    发明人： MUHAMMAD RASHEED ,  RONGJUN WANG ,  ZHENDONG LIU ,  XINYU FU ,  XIANMIN TANG

    IPC分类号： C23C14/04

    CPC分类号： C23C14/35 ,  C23C14/564 ,  H01J37/32853 ,  H01J37/32871 ,  H01J37/34 ,  H01J37/3411

    摘要： Apparatus for improved particle reduction are provided herein. In some embodiments, an apparatus may include a process kit shield comprising a one-piece metal body having an upper portion and a lower portion and having an opening disposed through the one-piece metal body, wherein the upper portion includes an opening-facing surface configured to be disposed about and spaced apart from a target of a physical vapor deposition chamber and wherein the opening-facing surface is configured to limit particle deposition on an upper surface of the upper portion of the one-piece metal body during sputtering of a target material from the target of the physical vapor deposition chamber.

    摘要翻译： 本文提供了用于改善颗粒减少的装置。 在一些实施例中，一种装置可以包括一个包括具有上部和下部的一体式金属体的处理套件屏蔽件，并且具有穿过一体式金属体设置的开口，其中，上部包括面向开口的表面 被配置为围绕物理气相沉积室的目标设置并隔开，并且其中所述面向开口的表面构造成在目标溅射期间限制所述一体金属体的上部的上表面上的颗粒沉积 材料从物理气相沉积室的目标。

    PROCESS KIT FOR RF PHYSICAL VAPOR DEPOSITION
    13.
    发明申请
    PROCESS KIT FOR RF PHYSICAL VAPOR DEPOSITION 审中-公开
    RF物理蒸气沉积工艺套件

    公开(公告)号：US20110036709A1

    公开(公告)日：2011-02-17

    申请号：US12850312

    申请日：2010-08-04

    申请人： Lara Hawrylchak ,  Kirankumar Savandaiah ,  Muhammad M. Rasheed ,  Rongjun Wang ,  Adolph Miller Allen ,  Zhigang Xie

    发明人： Lara Hawrylchak ,  Kirankumar Savandaiah ,  Muhammad M. Rasheed ,  Rongjun Wang ,  Adolph Miller Allen ,  Zhigang Xie

    IPC分类号： C23C14/34

    CPC分类号： H01L21/67017 ,  C23C14/34 ,  C23C14/564 ,  H01J37/3408 ,  H01J37/3447

    摘要： Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a cover ring, a shield, and an isolator for use in a physical deposition chamber. The components of the process kit work alone and in combination to significantly reduce particle generation and stray plasmas. In comparison with existing multiple part shields, which provide an extended RF return path contributing to RF harmonics causing stray plasma outside the process cavity, the components of the process kit reduce the RF return path thus providing improved plasma containment in the interior processing region.

    摘要翻译： 本发明的实施例一般涉及用于半导体处理室的处理套件和具有套件的半导体处理室。 更具体地，本文所述的实施例涉及包括用于物理沉积室中的盖环，屏蔽和隔离器的处理套件。 过程组件的组件单独工作并组合起来，以显着减少颗粒产生和杂散等离子体。 与现有的多部分屏蔽相比，其提供了有助于RF谐波的扩展的RF返回路径，从而在处理空腔之外引起杂散等离子体，处理套件的部件降低了RF返回路径，从而在内部处理区域中提供了改进的等离子体容纳物。

    Selective ruthenium deposition on copper materials
    14.
    发明授权
    Selective ruthenium deposition on copper materials 有权
    选择性钌沉积在铜材料上

    公开(公告)号：US07737028B2

    公开(公告)日：2010-06-15

    申请号：US12240822

    申请日：2008-09-29

    申请人： Rongjun Wang ,  Hua Chung ,  Jick M. Yu ,  Praburam Gopalraja

    发明人： Rongjun Wang ,  Hua Chung ,  Jick M. Yu ,  Praburam Gopalraja

    IPC分类号： H01L21/4763 ,  H01L21/44

    CPC分类号： H01L21/28562 ,  C23C16/04 ,  C23C16/18 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76868 ,  H01L21/76871 ,  H01L2221/1089

    摘要： Embodiments of the invention provide processes for selectively forming a ruthenium-containing film on a copper surface over exposed dielectric surfaces. Thereafter, a copper bulk layer may be deposited on the ruthenium-containing film. In one embodiment, a method for forming layers on a substrate is provided which includes positioning a substrate within a processing chamber, wherein the substrate contains a copper-containing surface and a dielectric surface, exposing the substrate to a ruthenium precursor to selectively form a ruthenium-containing film over the copper-containing surface while leaving exposed the dielectric surface, and depositing a copper bulk layer over the ruthenium-containing film.

    摘要翻译： 本发明的实施方案提供了在暴露的电介质表面上在铜表面上选择性地形成含钌膜的方法。 此后，可以将铜本体层沉积在含钌膜上。 在一个实施例中，提供了一种用于在衬底上形成层的方法，其包括将衬底定位在处理室内，其中衬底包含含铜表面和电介质表面，将衬底暴露于钌前体以选择性地形成钌 同时留下电介质表面，并在含钌膜上沉积铜体积层。

    PROCESS FOR SELECTIVE GROWTH OF FILMS DURING ECP PLATING
    16.
    发明申请
    PROCESS FOR SELECTIVE GROWTH OF FILMS DURING ECP PLATING 失效
    ECP镀层选择生长膜的工艺

    公开(公告)号：US20090215264A1

    公开(公告)日：2009-08-27

    申请号：US12037578

    申请日：2008-02-26

    申请人： Jick M. Yu ,  Wei D. Wang ,  Rongjun Wang ,  Hua Chung

    发明人： Jick M. Yu ,  Wei D. Wang ,  Rongjun Wang ,  Hua Chung

    IPC分类号： H01L21/44

    CPC分类号： H01L21/76879 ,  C25D5/02 ,  H01L21/76856 ,  H01L21/76859 ,  H01L21/76862 ,  H01L21/76873

    摘要： Methods of controlling deposition of metal on field regions of a substrate in an electroplating process are provided. In one aspect, a dielectric layer is deposited under plasma on the field region of a patterned substrate, leaving a conductive surface exposed in the openings. Electroplating on the field region is reduced or eliminated, resulting in void-free features and minimal excess plating. In another aspect, a resistive layer, which may be a metal, is used in place of the dielectric. In a further aspect, the surface of the conductive field region is modified to change its chemical potential relative to the sidewalls and bottoms of the openings.

    摘要翻译： 提供了在电镀工艺中控制金属在基片的场区上沉积的方法。 在一个方面，电介质层在等离子体上沉积在图案化衬底的场区上，留下在开口中暴露的导电表面。 场区域上的电镀被减少或消除，导致无空隙特征和最小的多余电镀。 在另一方面，可以使用可以是金属的电阻层来代替电介质。 在另一方面，导电场区域的表面被修改以相对于开口的侧壁和底部改变其化学势。

    ATOMIC LAYER DEPOSITION OF TANTALUM-CONTAINING MATERIALS USING THE TANTALUM PRECURSOR TAIMATA
    17.
    发明申请
    ATOMIC LAYER DEPOSITION OF TANTALUM-CONTAINING MATERIALS USING THE TANTALUM PRECURSOR TAIMATA 有权
    使用TANTALUM PRECURSOR TAIMATA的含钽材料的原子层沉积

    公开(公告)号：US20080032041A1

    公开(公告)日：2008-02-07

    申请号：US11773302

    申请日：2007-07-03

    申请人： Christophe Marcadal ,  Rongjun Wang ,  Hua Chung ,  Nirmalya Maity

    发明人： Christophe Marcadal ,  Rongjun Wang ,  Hua Chung ,  Nirmalya Maity

    IPC分类号： B05D5/12

    CPC分类号： H01L29/495 ,  C23C16/18 ,  C23C16/30 ,  C23C16/45553 ,  H01L21/28079 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76864 ,  H01L29/4958 ,  H01L29/517

    摘要： In one embodiment, a method for forming a tantalum-containing material on a substrate is provided which includes heating a liquid tantalum precursor containing tertiaryamylimido-tris(dimethylamido) tantalum (TAIMATA) to a temperature of at least 30° C. to form a tantalum precursor gas and exposing the substrate to a continuous flow of a carrier gas during an atomic layer deposition process. The method further provides exposing the substrate to the tantalum precursor gas by pulsing the tantalum precursor gas into the carrier gas and adsorbing the tantalum precursor gas on the substrate to form a tantalum precursor layer thereon. Subsequently, the tantalum precursor layer is exposed to at least one secondary element-containing gas by pulsing the secondary element-containing gas into the carrier gas while forming a tantalum barrier layer on the substrate. The tantalum barrier layer may contain tantalum, tantalum nitride, tantalum silicon nitride, tantalum boron nitride, tantalum phosphorous nitride or tantalum oxynitride.

    摘要翻译： 在一个实施方案中，提供了一种用于在基底上形成含钽材料的方法，其包括将含有叔戊酰亚氨基 - 三（二甲基氨基）钽（TAIMATA）的液体钽前体加热至至少30℃的温度以形成钽 前体气体，并在原子层沉积过程中将衬底暴露于载气的连续流动。 该方法进一步通过将钽前体气体脉冲到载气中并将钽前驱体气体吸附在基底上以在其上形成钽前体层而使衬底暴露于钽前体气体。 随后，通过在衬底上形成钽阻挡层，将含二次元素的气体脉冲送入载气中，使钽前体层暴露于至少一个含二元素气体。 钽阻挡层可以包含钽，氮化钽，氮化钽，氮化硼，氮化钽或氮氧化钽。