公开(公告)号：US09111980B2

公开(公告)日：2015-08-18

申请号：US13721311

申请日：2012-12-20

Applicant: APPLIED MATERIALS, INC.

Inventor： David K. Carlson ,  Michael R. Rice ,  Kartik B. Shah ,  Kashif Maqsood ,  Pravin K. Narwankar

IPC: C23C16/00 ,  H01L21/683 ,  B05B1/00 ,  C30B25/14 ,  C30B25/08 ,  E05F1/00 ,  H01L21/67 ,  H01L21/677 ,  C30B29/06

CPC classification number: H01L21/683 ,  B05B1/005 ,  C30B25/08 ,  C30B25/14 ,  C30B29/06 ,  E05F1/00 ,  H01L21/67017 ,  H01L21/67028 ,  H01L21/67115 ,  H01L21/67173 ,  H01L21/67712 ,  H01L21/6776

Abstract: Apparatus for the removal of exhaust gases are provided herein. In some embodiments, an apparatus may include a carrier for supporting one or more substrates in a substrate processing tool, the carrier having a first exhaust outlet, and an exhaust assembly including a first inlet disposed proximate the carrier to receive process exhaust from the first exhaust outlet of the carrier, a second inlet to receive a cleaning gas, and an outlet to remove the process exhaust and the cleaning gas.

Abstract translation: 本文提供了用于排出废气的设备。 在一些实施例中，设备可以包括用于在衬底处理工具中支撑一个或多个衬底的载体，所述载体具有第一排气出口和排气组件，所述排气组件包括靠近所述载体设置的第一入口，以接收来自所述第一排气 载体的出口，用于接收清洁气体的第二入口和用于去除工艺废气和清洁气体的出口。

公开(公告)号：US10557203B2

公开(公告)日：2020-02-11

申请号：US15835615

申请日：2017-12-08

Applicant: Applied Materials, Inc.

Inventor： David K. Carlson

IPC: C23C16/455 ,  C23C16/448 ,  F25B21/02 ,  C23C16/52 ,  H01L21/02

Abstract: Systems, methods and an apparatus used for delivery of chemical precursors, and more particularly to an ampoule for containing chemical precursors are provided. In one implementation, an apparatus for generating a chemical precursor used in a vapor deposition processing system is provided. The apparatus comprises a canister comprising a sidewall, a top, and a bottom surface encompassing an interior volume therein, an adhesion layer disposed over an outside surface of the sidewall and bottom surface, a thermally conductive coating disposed over the adhesion layer, an insulator layer disposed over the thermally conductive coating, wherein the thermally conductive coating over the bottom surface remains exposed and an inlet port and an outlet port in fluid communication with the interior volume.

公开(公告)号：US10119192B2

公开(公告)日：2018-11-06

申请号：US15136119

申请日：2016-04-22

Applicant: Applied Materials, Inc.

Inventor： Steve Aboagye ,  Paul Brillhart ,  Surajit Kumar ,  Anzhong Chang ,  Satheesh Kuppurao ,  Mehmet Tugrul Samir ,  David K. Carlson

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/458 ,  C23C16/48

Abstract: Embodiments described herein relate to a base ring assembly for use in a substrate processing chamber. In one embodiment, the base ring assembly comprises a ring body sized to be received within an inner circumference of the substrate processing chamber, the ring body comprising a loading port for passage of the substrate, a gas inlet, and a gas outlet, wherein the gas inlet and the gas outlet are disposed at opposing ends of the ring body, and an upper ring configured to dispose on a top surface of the ring body, and a lower ring configured to dispose on a bottom surface of the ring body, wherein the upper ring, the lower ring, and the ring body, once assembled, are generally concentric or coaxial.

公开(公告)号：US09530888B2

公开(公告)日：2016-12-27

申请号：US15073245

申请日：2016-03-17

Applicant: Applied Materials, Inc.

Inventor： Keun-Yong Ban ,  Zhiyuan Ye ,  Errol Antonio C. Sanchez ,  Xinyu Bao ,  David K. Carlson

IPC: H01L21/02 ,  H01L29/78 ,  H01L29/66 ,  H01L29/10 ,  H01L29/04 ,  H01L29/205 ,  H01L27/092 ,  H01L21/8238

CPC classification number: H01L29/7849 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02439 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/823807 ,  H01L27/092 ,  H01L29/045 ,  H01L29/1054 ,  H01L29/20 ,  H01L29/205 ,  H01L29/66522

Abstract: Embodiments of the present disclosure generally relate to a semiconductor device including layers of group III-V semiconductor materials. In one embodiment, the semiconductor device includes a phosphorous containing layer deposited on a silicon substrate, wherein a lattice mismatch between the phosphorous containing layer and the silicon substrate is less than 5%, a group III-V compound nucleation layer deposited on the phosphorous containing layer at a first temperature, the group III-V compound nucleation layer having a first thickness, a group III-V compound transition layer deposited on the group III-V compound nucleation layer at a second temperature higher than the first temperature, the group III-V compound transition layer having a second thickness larger than the first thickness, and the group III-V compound nucleation layer is different from the group III-V compound transition layer, and an active layer deposited on the group III-V compound transition layer.

Abstract translation: 本公开的实施例一般涉及包括III-V族III族半导体材料层的半导体器件。 在一个实施例中，半导体器件包括沉积在硅衬底上的含磷层，其中含磷层和硅衬底之间的晶格失配小于5％，III-V族化合物成核层沉积在含磷 III族化合物成核层，第III-V族化合物成核层，第III-V族化合物成核层，第III-V族化合物成核层，第III-V族化合物成核层， -V化合物过渡层，其具有大于第一厚度的第二厚度，III-V族化合物成核层与III-V族化合物过渡层不同，并且沉积在III-V族化合物过渡层上的活性层 。

公开(公告)号：US09443728B2

公开(公告)日：2016-09-13

申请号：US14461191

申请日：2014-08-15

Applicant: Applied Materials, Inc.

Inventor： Swaminathan T. Srinivasan ,  Atif M. Noori ,  David K. Carlson

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/324

CPC classification number: H01L21/02664 ,  H01L21/0237 ,  H01L21/02439 ,  H01L21/02532 ,  H01L21/02538 ,  H01L21/324 ,  H01L21/3245 ,  H01L21/67011 ,  H01L21/67098 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/67248

Abstract: Implementations of the present disclosure generally relate to methods and apparatus for forming a film on a substrate. More particularly, implementations of the present disclosure relate to methods and apparatus for heteroepitaxial growth of crystalline films. In one implementation, a method of heteroepitaxial deposition of a strain relaxed buffer (SRB) layer on a substrate is provided. The method comprises epitaxially depositing a buffer layer over a dissimilar substrate, rapidly heating the buffer layer to relax the buffer layer, rapidly cooling the buffer layer and determining whether the buffer layer has achieved a desired thickness.

Abstract translation: 本公开的实施方式一般涉及在基板上形成膜的方法和装置。 更具体地，本公开的实施方案涉及用于晶体膜的异质外延生长的方法和装置。 在一个实施方案中，提供了在衬底上的应变松弛缓冲层（SRB）层的异质外延沉积的方法。 该方法包括在不同的衬底上外延沉积缓冲层，快速加热缓冲层以使缓冲层松弛，快速冷却缓冲层，并确定缓冲层是否达到所需的厚度。

公开(公告)号：US09347696B2

公开(公告)日：2016-05-24

申请号：US13902304

申请日：2013-05-24

Applicant: APPLIED MATERIALS, INC.

Inventor： David K. Carlson ,  Errol Antonio C. Sanchez ,  Kenric Choi ,  Marcel E. Josephson ,  Dennis Demars

IPC: F25B21/02 ,  C23C16/448

CPC classification number: F25B21/02 ,  C23C16/448 ,  C23C16/4482

Abstract: Apparatus for thermal management of a precursor for use in substrate processing are provided herein. In some embodiments, an apparatus for thermal management of a precursor for use in substrate processing may include a body having an opening sized to receive a storage container having a liquid or solid precursor disposed therein, the body fabricated from thermally conductive material; one or more thermoelectric devices coupled to the body proximate the opening; and a heat sink coupled to the one or more thermoelectric devices.

Abstract translation: 本文提供了用于基板处理中使用的前体的热管理装置。 在一些实施例中，用于对基板处理中使用的前体进行热管理的设备可以包括具有开口尺寸的开口的主体，该开口的尺寸适于容纳设置在其中的液体或固体前体的存储容器，所述主体由导热材料制成; 一个或多个耦合到靠近开口的本体的热电装置; 以及耦合到所述一个或多个热电装置的散热器。

公开(公告)号：US09322097B2

公开(公告)日：2016-04-26

申请号：US13846355

申请日：2013-03-18

Applicant: Applied Materials, Inc.

Inventor： Steve Aboagye ,  Paul Brillhart ,  Surajit Kumar ,  Anzhong Chang ,  Satheesh Kuppurao ,  Mehmet Tugrul Samir ,  David K. Carlson

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/48

CPC classification number: C23C16/45502 ,  C23C16/4411 ,  C23C16/45504 ,  C23C16/45563 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/481

Abstract: Embodiments described herein relate to a base ring assembly for use in a substrate processing chamber. In one embodiment, the base ring assembly comprises a ring body sized to be received within an inner circumference of the substrate processing chamber, the ring body comprising a loading port for passage of the substrate, a gas inlet, and a gas outlet, wherein the gas inlet and the gas outlet are disposed at opposing ends of the ring body, and an upper ring configured to dispose on a top surface of the ring body, and a lower ring configured to dispose on a bottom surface of the ring body, wherein the upper ring, the lower ring, and the ring body, once assembled, are generally concentric or coaxial.

Abstract translation: 本文所述的实施例涉及用于衬底处理室中的基座环组件。 在一个实施例中，基环组件包括尺寸适于容纳在基板处理室的内圆周内的环体，环体包括用于通过基板的装载口，气体入口和气体出口，其中， 气体入口和气体出口设置在环体的相对端，并且配置成设置在环体的顶表面上的上环和被配置为设置在环体的底表面上的下环，其中， 一旦组装，上环，下环和环体大致同心或同轴。

公开(公告)号：US11981999B2

公开(公告)日：2024-05-14

申请号：US17525426

申请日：2021-11-12

Applicant: Applied Materials, Inc.

Inventor： David K. Carlson ,  Stephen Moffatt

IPC: C23C16/48 ,  C23C14/34 ,  C23C14/54 ,  C23C16/52 ,  H01L21/268

CPC classification number: C23C16/482 ,  C23C14/3435 ,  C23C14/541 ,  C23C16/52 ,  H01L21/2686

Abstract: Embodiments of the present disclosure generally relate to semiconductor processing, and specifically to methods and apparatus for surface modification of substrates. In an embodiment, a substrate modification method is provided. The method includes positioning a substrate within a processing chamber; and depositing a material on a portion of the substrate by a deposition process, wherein the deposition process comprises: thermally heating the substrate to a temperature of less than about 500° C.; delivering a first electromagnetic energy from an electromagnetic energy source to the substrate to modify a first region of the substrate, the first region of the substrate being at or near an upper surface of the substrate; and depositing a first material on the first region while delivering the first electromagnetic energy.

公开(公告)号：US10586744B2

公开(公告)日：2020-03-10

申请号：US15934679

申请日：2018-03-23

Applicant: Applied Materials, Inc.

Inventor： David K. Carlson

IPC: B01D53/04 ,  H01L21/66 ,  C23C16/44 ,  H01L21/02 ,  H01L21/67 ,  G01N21/3504 ,  G01N30/02 ,  G01J3/42 ,  G01N21/35 ,  G01N21/84 ,  G01N21/78

Abstract: Increasing efficiency of absorbers is provided herein. In some embodiments, a method of processing a substrate may include determining a quantity of a removal species in an effluent stream flowing from a semiconductor processing chamber, wherein determining comprises: detecting or predicting a quantity of the removal species upstream of a chamber abatement apparatus in the effluent stream flowing from the semiconductor processing chamber; and removing the removal species from the effluent stream with the chamber abatement apparatus if the determined quantity of the removal species exceeds a threshold value of the removal species.

公开(公告)号：US10119194B2

公开(公告)日：2018-11-06

申请号：US14766863

申请日：2014-02-18

Applicant: APPLIED MATERIALS, INC.

Inventor： David K. Carlson

IPC: C23C16/54 ,  C23C16/455 ,  C23C16/458 ,  C30B25/08 ,  C30B25/14 ,  C30B25/16 ,  C30B25/02

Abstract: Apparatus for use in a substrate processing chamber are provided herein. In some embodiments, an indexed jet injector may include a body having a substantially cylindrical central volume, a gas input port disposed on a first surface of the body, a gas distribution channel formed in the body and fluidly coupled to the gas input port and to the cylindrical central volume, a gas distribution drum disposed within the cylindrical central volume and rotatably coupled to the body, the gas distribution drum having a plurality of jet channels formed through the gas distribution drum, and a plurality of indexer output ports formed on a second surface of the body, wherein each of the plurality of jet channels fluidly couple the gas input port to at least one of the plurality of indexer output ports at least once per 360° rotation of the gas distribution drum.