公开(公告)号：US20190393042A1

公开(公告)日：2019-12-26

申请号：US16554834

申请日：2019-08-29

Applicant: Applied Materials, Inc.

Inventor： Susmit SINGHA ROY ,  Kelvin CHAN ,  Hien Minh LE ,  Sanjay KAMATH ,  Abhijit Basu MALLICK ,  Srinivas GANDIKOTA ,  Karthik JANAKIRAMAN

IPC: H01L21/285 ,  C23C16/02 ,  C23C16/40 ,  C23C16/505 ,  C23C28/00 ,  H01L21/02 ,  H01L21/3205 ,  C23C16/06 ,  H01L21/768

Abstract: Implementations described herein generally relate to a method for forming a metal layer and to a method for forming an oxide layer on the metal layer. In one implementation, the metal layer is formed on a seed layer, and the seed layer helps the metal in the metal layer nucleate with small grain size without affecting the conductivity of the metal layer. The metal layer may be formed using plasma enhanced chemical vapor deposition (PECVD) and nitrogen gas may be flowed into the processing chamber along with the precursor gases. In another implementation, a barrier layer is formed on the metal layer in order to prevent the metal layer from being oxidized during subsequent oxide layer deposition process. In another implementation, the metal layer is treated prior to the deposition of the oxide layer in order to prevent the metal layer from being oxidized.

公开(公告)号：US20190074218A1

公开(公告)日：2019-03-07

申请号：US16184117

申请日：2018-11-08

Applicant: Applied Materials, Inc.

Inventor： Pramit MANNA ,  Rui CHENG ,  Kelvin CHAN ,  Abhijit Basu MALLICK

IPC: H01L21/768 ,  C23C16/46 ,  C23C16/34 ,  C23C16/16 ,  H01L21/285 ,  C23C16/04

Abstract: Methods for forming thin films in high aspect ratio feature definitions are provided. In one implementation, a method of processing a substrate in a process chamber is provided. The method comprises flowing a metal organic containing precursor gas comprising a ligand into an interior processing volume of a process chamber, flowing a precursor gas comprising the ligand into the processing volume and thermally decomposing the metal-containing precursor gas comprising the ligand and the precursor gas comprising the ligand in the interior processing volume to deposit a metal-containing layer over at least one or more sidewalls and a bottom surface of a feature definition in and below a surface of a dielectric layer on the substrate.

公开(公告)号：US20170323777A1

公开(公告)日：2017-11-09

申请号：US15656045

申请日：2017-07-21

Applicant: Applied Materials, Inc.

Inventor： Yihong CHEN ,  Kelvin CHAN ,  Shaunak MUKHERJEE ,  Abhijit Basu MALLICK

IPC: H01L21/02 ,  C23C16/455 ,  H01L21/768 ,  H01L21/3105 ,  H01L21/033 ,  H01L23/532

CPC classification number: H01L21/0228 ,  C23C16/45525 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/02216 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/02307 ,  H01L21/02312 ,  H01L21/02315 ,  H01L21/0337 ,  H01L21/3105 ,  H01L21/76831 ,  H01L21/76834 ,  H01L23/53228

Abstract: Implementations disclosed herein generally relate to methods of forming silicon oxide films. The methods can include performing silylation on the surface of the substrate having terminal hydroxyl groups. The hydroxyl groups on the surface of the substrate are then regenerated using a plasma and H2O soak in order to perform an additional silylation. Further methods include catalyzing the exposed surfaces using a Lewis acid, directionally inactivating the exposed first and second surfaces and deposition of a silicon containing layer on the sidewall surfaces. Multiple plasma treatments may be performed to deposit a layer having a desired thickness.

公开(公告)号：US20160017492A1

公开(公告)日：2016-01-21

申请号：US14801348

申请日：2015-07-16

Applicant: Applied Materials, Inc.

Inventor： Bo XIE ,  Alexandros T. DEMOS ,  Vu Ngoc Tran NGUYEN ,  Kelvin CHAN ,  He REN ,  Kang Sub YIM ,  Mehul B. NAIK

IPC: C23C16/48 ,  C23C16/40 ,  C23C16/505 ,  B01J19/12

CPC classification number: C23C16/482 ,  C23C16/401 ,  H01L21/3105 ,  H01L21/76825 ,  H01L21/76829

Abstract: Embodiments described herein provide a method for sealing a porous low-k dielectric film. The method includes forming a sealing layer on the porous low-k dielectric film using a cyclic process. The cyclic process includes repeating a sequence of depositing a sealing layer on the porous low-k dielectric film and treating the sealing layer until the sealing layer achieves a predetermined thickness. The treating of each intermediate sealing layer generates more reactive sites on the surface of each intermediate sealing layer, which improves the quality of the resulting sealing layer.

Abstract translation: 本文所述的实施例提供了一种用于密封多孔低k电介质膜的方法。 该方法包括使用循环过程在多孔低k电介质膜上形成密封层。 循环过程包括重复在多孔低k电介质膜上沉积密封层的顺序并处理密封层，直到密封层达到预定厚度。 每个中间密封层的处理在每个中间密封层的表面上产生更多的反应性位点，这提高了所得密封层的质量。

公开(公告)号：US20150371846A1

公开(公告)日：2015-12-24

申请号：US14653119

申请日：2014-02-18

Applicant: APPLIED MATERIALS, INC.

Inventor： Kelvin CHAN

IPC: H01L21/02 ,  H01L21/285 ,  H01L23/532 ,  H01L21/768

CPC classification number: H01L21/02126 ,  C23C16/401 ,  C23C16/4554 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/02315 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02359 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76844 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the present invention generally relate to methods of forming carbon-doped oxide films. The methods generally include generating hydroxyl groups on a surface of the substrate using a plasma, and then performing silylation on the surface of the substrate. The hydroxyl groups on the surface of the substrate are then regenerated using a plasma in order to perform an additional silylation. Multiple plasma treatments and silylations may be performed to deposit a layer having a desired thickness.

Abstract translation: 本发明的实施方案一般涉及形成碳掺杂氧化物膜的方法。 所述方法通常包括使用等离子体在基材的表面上产生羟基，然后在基材的表面上进行甲硅烷基化。 然后使用等离子体再生衬底表面上的羟基以进行另外的甲硅烷基化。 可以进行多次等离子体处理和甲硅烷化以沉积具有所需厚度的层。

公开(公告)号：US20150162189A1

公开(公告)日：2015-06-11

申请号：US14098428

申请日：2013-12-05

Applicant: Applied Materials, Inc.

Inventor： Bo XIE ,  Kelvin CHAN ,  Alexandros T. DEMOS

IPC: H01L21/02

CPC classification number: H01L21/02118 ,  C23C16/482 ,  H01L21/02277 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/67103 ,  H01L21/67115 ,  H01L21/6719

Abstract: Embodiments of the invention generally provide methods for sealing pores at a surface of a dielectric layer formed on a substrate. In one embodiment, the method includes exposing a dielectric layer formed on a substrate to a first pore sealing agent, wherein the first pore sealing agent contains a compound with a general formula CxHyOz, where x has a range of between 1 and 15, y has a range of between 2 and 22, and z has a range of between 1 and 3, and exposing the substrate to UV radiation in an atmosphere of the first pore sealing agent to form a first sealing layer on the dielectric layer.

Abstract translation: 本发明的实施方案通常提供了在形成在基底上的电介质层的表面处密封孔的方法。 在一个实施方案中，该方法包括将形成在基底上的电介质层暴露于第一孔密封剂，其中第一孔密封剂含有具有通式C x H y O z的化合物，其中x具有1至15的范围，y具有 在2和22之间的范围，z具有1和3之间的范围，并且在第一孔密封剂的气氛中将基底暴露于UV辐射，以在介电层上形成第一密封层。

公开(公告)号：US20240412959A1

公开(公告)日：2024-12-12

申请号：US18208174

申请日：2023-06-09

Applicant: Applied Materials, Inc.

Inventor： David PETERSON ,  David COUMOU ,  Chuang-Chia LIN ,  Kelvin CHAN ,  Farzad HOUSHMAND ,  Ping-Hwa HSIEH ,  Kristopher FORD

IPC: H01J37/32

Abstract: Embodiments disclosed herein include a module, comprising: a substrate, wherein the substrate comprises a dielectric material, and a microstrip resonator on the substrate. In an embodiment, a microstrip transmission line is on the substrate adjacent to the microstrip resonator, and the microstrip resonator is spaced from the microstrip transmission line by a gap. In an embodiment, a ground plane on a surface of the substrate is opposite from the microstrip resonator.

公开(公告)号：US20240274407A1

公开(公告)日：2024-08-15

申请号：US18168168

申请日：2023-02-13

Applicant: Applied Materials, Inc.

Inventor： Peiqi WANG ,  Kelvin CHAN ,  Kai WU ,  Mingrui ZHAO ,  David PETERSON ,  Ping-Hwa HSIEH

IPC: H01J37/32 ,  H01L21/02

CPC classification number: H01J37/32449 ,  H01J37/32458 ,  H01J37/32743 ,  H01L21/02315

Abstract: Embodiments herein are generally directed to electronic device manufacturing and, more particularly, to systems and methods for forming substantially void-free and seam-free tungsten features in a semiconductor device manufacturing scheme. In one embodiment, a substrate processing system features a processing chamber and a gas delivery system fluidly coupled to the processing chamber. The gas delivery system includes a first radical generator for use in a differential inhibition treatment process where the differential inhibition treatment process includes exposing a substrate to the effluent of a treatment plasma from a halogen free nitrogen-containing gas and a halogen-containing gas.

公开(公告)号：US20140349480A1

公开(公告)日：2014-11-27

申请号：US14285535

申请日：2014-05-22

Applicant: Applied Materials, Inc.

Inventor： Mei-yee SHEK ,  Weifeng YE ,  Li-Qun XIA ,  Kang Sub YIM ,  Kelvin CHAN

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/285

CPC classification number: H01L21/7685 ,  H01L21/02074 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/3105 ,  H01L21/76826 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76862 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. Embodiments described herein control selectivity of deposition by preventing damage to the dielectric surface, repairing damage to the dielectric surface, such as damage which can occur during the cobalt deposition process, and controlling deposition parameters for the cobalt layer.

Abstract translation: 本发明的实施方案提供了在暴露的电介质表面上在铜表面上选择性地形成钴层的方法。 本文所述的实施例通过防止电介质表面的损坏来修复沉积的选择性，修复电介质表面的损伤，例如钴沉积过程中可能发生的损伤，以及控制钴层的沉积参数。

公开(公告)号：US20140017895A1

公开(公告)日：2014-01-16

申请号：US13920380

申请日：2013-06-18

Applicant: Applied Materials, Inc.

Inventor： Kelvin CHAN ,  Jin XU ,  Kang Sub YIM ,  Alexandros T. DEMOS

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/3105 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/76814 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76826 ,  H01L2221/1047

Abstract: Embodiments of the present invention generally relate to methods for lowering the dielectric constant of low-k dielectric films used in semiconductor fabrication. In one embodiment, a method for lowering the dielectric constant (k) of a low-k silicon-containing dielectric film, comprising exposing a porous low-k silicon-containing dielectric film to a hydrofluoric acid solution and subsequently exposing the low-k silicon-containing dielectric film to a silylation agent. The silylation agent reacts with Si—OH functional groups in the porous low-k dielectric film to increase the concentration of carbon in the low-k dielectric film.

Abstract translation: 本发明的实施例一般涉及用于降低半导体制造中使用的低k电介质膜的介电常数的方法。 在一个实施例中，一种用于降低低k含硅电介质膜的介电常数（k）的方法，包括将多孔低k含硅电介质膜暴露于氢氟酸溶液，随后将低k硅 包含电介质膜到甲硅烷基化剂。 甲硅烷基化剂与多孔低k电介质膜中的Si-OH官能团反应以增加低k电介质膜中的碳浓度。