公开(公告)号：US10083834B2

公开(公告)日：2018-09-25

申请号：US15718148

申请日：2017-09-28

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  Benjamin Schmiege ,  Jeffrey W. Anthis ,  Abhijit Basu Mallick ,  Susmit Singha Roy ,  Ziqing Duan

IPC: H01L21/00 ,  H01L21/033 ,  C23F1/00 ,  H01L21/3213

CPC classification number: H01L21/0338 ,  C23F1/00 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/321 ,  H01L21/32133 ,  H01L21/32139 ,  H01L21/76805 ,  H01L21/76883 ,  H01L21/76897

Abstract: Processing methods comprising selectively orthogonally growing a first material through a mask to provide an expanded first material are described. The mask can be removed leaving the expanded first material extending orthogonally from the surface of the first material. Further processing can create a self-aligned via.

公开(公告)号：US09922872B2

公开(公告)日：2018-03-20

申请号：US15151612

申请日：2016-05-11

Applicant: Applied Materials, Inc.

Inventor： David Knapp ,  Jeffrey W. Anthis ,  Xinyu Fu ,  Srinivas Gandikota

IPC: H01L21/768 ,  H01L23/498 ,  H01L23/532 ,  H01L21/285

CPC classification number: H01L21/76876 ,  H01L21/28562 ,  H01L21/76877 ,  H01L23/49866 ,  H01L23/53266

Abstract: Processing methods comprising exposing a substrate to a nucleation promoter followed by sequential exposure of a first reactive gas comprising a metal-containing compound and a second reactive gas to form a metal-containing film on the substrate.

公开(公告)号：US09799533B2

公开(公告)日：2017-10-24

申请号：US15177726

申请日：2016-06-09

Applicant: Applied Materials, Inc.

Inventor： Jeffrey W. Anthis ,  Benjamin Schmiege ,  David Thompson

IPC: H01L21/321 ,  H01L21/3213 ,  C23F1/00 ,  H01J37/32 ,  C23F1/12 ,  C23F4/00

CPC classification number: H01L21/32136 ,  C23F1/00 ,  C23F1/12 ,  C23F4/00 ,  H01J37/32715 ,  H01J37/32862 ,  H01L21/32135

Abstract: Provided are methods for etching films comprising transition metals. Certain methods involve activating a substrate surface comprising at least one transition metal, wherein activation of the substrate surface comprises exposing the substrate surface to heat, a plasma, an oxidizing environment, or a halide transfer agent to provide an activated substrate surface; and exposing the activated substrate surface to a reagent comprising a Lewis base or pi acid to provide a vapor phase coordination complex comprising one or more atoms of the transition metal coordinated to one or more ligands from the reagent. Certain other methods provide selective etching from a multi-layer substrate comprising two or more of a layer of Co, a layer of Cu and a layer of Ni.

公开(公告)号：US09683287B2

公开(公告)日：2017-06-20

申请号：US14058406

申请日：2013-10-21

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  Srinivas Gandikota ,  Xinliang Lu ,  Wei Tang ,  Jing Zhou ,  Seshadri Ganguli ,  Jeffrey W. Anthis ,  Atif Noori ,  Faruk Gungor ,  Dien-Yeh Wu ,  Mei Chang ,  Shih Chung Chen

IPC: C23C16/12 ,  C23C16/30 ,  C23C16/455

CPC classification number: C23C16/30 ,  C23C16/45531 ,  C23C16/45534

Abstract: Films comprising Aluminum, carbon and a metal, wherein the aluminum is present in an amount greater than about 16% by elemental content and the film has less than about 50% carbon. Methods of forming the films comprise exposing a substrate to a metal halide precursor, purging the metal halide precursor from the processing chamber and then exposing the substrate to an alkyl aluminum precursor and an alane precursor, either sequentially or simultaneously. The alane precrursor comprises an amine-alane and a stabilizing amine selected from one or more of diemthylcyclohexylamine or dicyclomethylhexylamine.

公开(公告)号：US20170096740A1

公开(公告)日：2017-04-06

申请号：US15383556

申请日：2016-12-19

Applicant: Applied Materials, Inc.

Inventor： Benjamin Schmiege ,  Nitin K. Ingle ,  Srinivas D. Nemani ,  Jeffrey W. Anthis ,  Xikun Wang ,  Jie Liu ,  David Benjaminson

IPC: C23F1/12 ,  H01J37/32

CPC classification number: C23F1/12 ,  C23F4/00 ,  C30B33/12 ,  H01J37/32009 ,  H01J2237/334

Abstract: Provided are methods for etching films comprising transition metals which help to minimize higher etch rates at the grain boundaries of polycrystalline materials. Certain methods pertain to amorphization of the polycrystalline material, other pertain to plasma treatments, and yet other pertain to the use of small doses of halide transfer agents in the etch process.

公开(公告)号：US09580799B2

公开(公告)日：2017-02-28

申请号：US14134658

申请日：2013-12-19

Applicant: Applied Materials, Inc.

Inventor： Jeffrey W. Anthis ,  David Thompson

IPC: C07F15/00 ,  C07D207/335 ,  C23C16/18 ,  C07D213/36 ,  C23C16/455 ,  C07D213/38 ,  C07F1/00 ,  C07F1/08 ,  C07F5/02 ,  C07F5/06 ,  C07F7/00 ,  C07F7/28 ,  C07F9/00 ,  C07F11/00 ,  C07F13/00

CPC classification number: C07D213/38 ,  C07C211/13 ,  C07C211/54 ,  C07D207/335 ,  C07D213/36 ,  C07F1/00 ,  C07F1/005 ,  C07F1/08 ,  C07F5/022 ,  C07F5/069 ,  C07F7/003 ,  C07F7/28 ,  C07F9/005 ,  C07F11/005 ,  C07F13/005 ,  C07F15/004 ,  C07F15/0053 ,  C07F15/0066 ,  C07F15/008 ,  C07F15/0093 ,  C23C16/18 ,  C23C16/45553 ,  C23C16/50

Abstract: Methods for deposition of elemental metal films on surfaces using metal coordination complexes comprising nitrogen-containing ligands are provided. Also provided are nitrogen-containing ligands useful in the methods of the invention and metal coordination complexes comprising these ligands.

Abstract translation: 提供了使用包含含氮配体的金属配位络合物在表面上沉积元素金属膜的方法。 还提供了可用于本发明方法的含氮配体和包含这些配体的金属配位络合物。

公开(公告)号：US20160118268A1

公开(公告)日：2016-04-28

申请号：US14989077

申请日：2016-01-06

Applicant: Applied Materials, Inc.

Inventor： Nitin K. Ingle ,  Jessica Sevanne Kachian ,  Lin Xu ,  Soonam Park ,  Xikun Wang ,  Jeffrey W. Anthis

IPC: H01L21/3213

CPC classification number: H01L21/3065 ,  C23F1/02 ,  C23F1/12 ,  C23F4/00 ,  H01J37/3244 ,  H01J2237/334 ,  H01J2237/3341 ,  H01L21/02071 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/76814

Abstract: Methods of selectively etching metal-containing materials from the surface of a substrate are described. The etch selectively removes metal-containing materials relative to silicon-containing films such as silicon, polysilicon, silicon oxide, silicon germanium and/or silicon nitride. The methods include exposing metal-containing materials to halogen containing species in a substrate processing region. A remote plasma is used to excite the halogen-containing precursor and a local plasma may be used in embodiments. Metal-containing materials on the substrate may be pretreated using moisture or another OH-containing precursor before exposing the resulting surface to remote plasma excited halogen effluents in embodiments.

公开(公告)号：US09299582B2

公开(公告)日：2016-03-29

申请号：US14512973

申请日：2014-10-13

Applicant: Applied Materials, Inc.

Inventor： Nitin K. Ingle ,  Jessica Sevanne Kachian ,  Lin Xu ,  Soonam Park ,  Xikun Wang ,  Jeffrey W. Anthis

IPC: H01L21/3065 ,  H01L21/311 ,  H01L21/02 ,  C23F1/02 ,  C23F1/12 ,  H01J37/32 ,  C23F4/00 ,  H01L21/3213 ,  H01L21/768

CPC classification number: H01L21/3065 ,  C23F1/02 ,  C23F1/12 ,  C23F4/00 ,  H01J37/3244 ,  H01J2237/334 ,  H01J2237/3341 ,  H01L21/02071 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/76814

Abstract: Methods of selectively etching metal-containing materials from the surface of a substrate are described. The etch selectively removes metal-containing materials relative to silicon-containing films such as silicon, polysilicon, silicon oxide, silicon germanium and/or silicon nitride. The methods include exposing metal-containing materials to halogen containing species in a substrate processing region. A remote plasma is used to excite the halogen-containing precursor and a local plasma may be used in embodiments. Metal-containing materials on the substrate may be pretreated using moisture or another OH-containing precursor before exposing the resulting surface to remote plasma excited halogen effluents in embodiments.

Abstract translation: 描述了从衬底表面选择性地蚀刻含金属材料的方法。 相对于含硅膜，例如硅，多晶硅，氧化硅，硅锗和/或氮化硅，蚀刻选择性去除含金属的材料。 这些方法包括将含金属的材料暴露于基底处理区域中含有卤素的物质。 使用远程等离子体来激发含卤素的前体，并且在实施方案中可以使用局部等离子体。 在实施方案中，在将所得表面暴露于远离等离子体激发的卤素流出物之前，可以使用水分或其它含OH前体对基材上的含金属材料进行预处理。

公开(公告)号：US08927059B2

公开(公告)日：2015-01-06

申请号：US13669571

申请日：2012-11-06

Applicant: Applied Materials, Inc.

Inventor： Xinliang Lu ,  David Thompson ,  Jeffrey W. Anthis ,  Mei Chang ,  Seshadri Ganguli ,  Wei Tang ,  Srinivas Gandikota ,  Atif Noori

IPC: C23C16/06 ,  C23C16/08 ,  C23C16/10 ,  C23C16/22 ,  C23C16/455 ,  H01L21/285 ,  H01L21/768

CPC classification number: C23C16/455 ,  C23C16/06 ,  C23C16/45525 ,  H01L21/28562 ,  H01L21/76841

Abstract: Methods of depositing pure metal and aluminum alloy metal films. Certain methods comprises contacting a substrate surface with first and second precursors, the first precursor comprising an aluminum precursor selected from dimethylaluminum hydride, alane coordinated to an amine, and a compound having a structure represented by: wherein R is a C1-C6 alkyl group, and the second precursor comprising a metal halide. Other methods relate to sequentially exposing a substrate to a first and second precursor, the first precursor comprising an aluminum precursor as described above, and the second precursor comprising Ti(NR′2)4 or Ta(NR′2)5, wherein R′ is an alkyl, alkenyl, alkynyl, keto or aldehyde group.

Abstract translation: 沉积纯金属和铝合金金属膜的方法。 某些方法包括使基材表面与第一和第二前体接触，第一前体包含选自二甲基氢化铝，与胺配位的烷烃的铝前驱物和具有下列结构的化合物：其中R是C1-C6烷基， 并且第二前体包含金属卤化物。 其它方法涉及将衬底顺序地暴露于第一和第二前体，第一前体包含如上所述的铝前体，第二前体包含Ti（NR'2）4或Ta（NR'2）5，其中R' 是烷基，烯基，炔基，酮基或醛基。

公开(公告)号：US11894233B2

公开(公告)日：2024-02-06

申请号：US17955996

申请日：2022-09-29

Applicant: Applied Materials, Inc.

Inventor： Yixiong Yang ,  Wei V. Tang ,  Seshadri Ganguli ,  Sang Ho Yu ,  Feng Q. Liu ,  Jeffrey W. Anthis ,  David Thompson ,  Jacqueline S. Wrench ,  Naomi Yoshida

IPC: H01L21/285 ,  C23C16/455 ,  C23C16/18 ,  H01L23/532 ,  C23C16/04

CPC classification number: H01L21/28562 ,  C23C16/04 ,  C23C16/18 ,  C23C16/45553 ,  H01L21/28518 ,  H01L21/28568 ,  H01L23/53242

Abstract: Methods of depositing platinum group metal films of high purity, low resistivity, and good conformality are described. A platinum group metal film is formed in the absence of an oxidant. The platinum group metal film is selectively deposited on a conductive substrate at a temperature less than 200° C. by using an organic platinum group metal precursor.