摘要:
A method for making a semiconductor device having a heat sink is provided in which an opening through the heat sink enables a vacuum source to be applied to a semiconductor die mounting surface. In one form, a semiconductor die is attached to a mounting surface of a leadframe. The leadframe also has a plurality of leads which are electrically coupled to the semiconductor die. The semiconductor die and portions of the leads are encapsulated in a package body. Also incorporated into the package body is a heat sink. The heat sink has an opening which extends through the heat sink and exposes a portion of the mounting surface of the leadframe. The opening is used to apply a vacuum to the mounting surface during the formation of the package body so that the mounting surface and heat sink are held in close proximity. The closeness provides a good thermal conduction path from the semiconductor die to the ambient, thereby enhancing the thermal dissipation properties of the device.
摘要:
A semiconductor device having a heat sink is provided in which an opening through the heat sink enables a vacuum source to be applied to a semiconductor die mounted surface. In one form, a semiconductor die is attached to a mounting surface of a leadframe. The leadframe also has a plurality of leads which are electrically coupled to the semiconductor die. The semiconductor die and portions of the leads encapsulated in a package body. Also incorporated in the package body is a heat sink. The heat sink has an opening which extends through the heat sink and exposes a portion of the mounting surface of the leadframe. The opening is used to apply a vacuum to the mounting surface during the formation of the package body so that the mounting surface and heat sink are held in close proximity. The closeness provides a good thermal conduction path from the semiconductor die to the ambient, thereby enhancing the thermal dissipation properties of the device.
摘要:
A stacked semiconductor device includes a first and a second semiconductor device. A first major surface of each of the first and second devices which includes the active circuitry directly face each other. The first major surface of each of the devices includes a beveled edge on at least one edge, and a probe pad which extends onto the beveled edge. A first opening is located between the beveled edges of the first and second devices on a vertical side of the stacked semiconductor device.
摘要:
A processor/cache assembly has a processor die coupled to a cache die. The processor die has a plurality of processor units arranged in an array. There is a plurality of processor sets of contact pads on the processor units, one processor set for each processor unit. Similarly, the cache die has a plurality of cache units arranged in an array. There is a plurality of cache sets of contact pads on the cache die, one cache set for each cache unit. Each cache set is in contact with one corresponding processor set.
摘要:
A semiconductor device includes an intermediate substrate having a first surface and a second surface, a first die attached to the first surface of the intermediate substrate. The first die has a first active surface, and the first active surface faces the intermediate substrate. A second die is attached to the second surface of the intermediate substrate, has a second active surface, faces the intermediate substrate, and is coupled to the first die through an electrically conductive material in the intermediate substrate. An organic material encapsulates at least an edge of the intermediate substrate. There is also a method of forming the semiconductor device.
摘要:
A lead-on-chip (LOC) semiconductor device (10) has an integral decoupling capacitor in the form of a capacitor tape (20) attached to an active surface (14) of a semiconductor die (12). The capacitor tape includes two adhesive layers (22 and 24) to bond the die to the capacitor tape and to a plurality of leads (18). The tape also includes two conductive layers (26 and 28), made for instance of copper foil, which serve as the two electrodes of the capacitor. The electrodes are separated by a dielectric layer (30) which in one embodiment comprises barium-titanate (BaTiO.sub.3). The electrodes of the capacitor are electrically coupled to appropriate power and ground leads of the device by bonding wires (36 and 40) and to appropriate bonding pads (16) also by bonding wires (38 and 42). The bonding wires can be configured using any of three available wiring options. The present invention can also be implemented in a chip-on-lead (COL) device.
摘要:
A thin semiconductor device (50) can be cost effectively manufactured using conventional wire bonding technology and stamped leadframes. A flagless leadframe (12) is utilized in one embodiment. A support tape (14) having a die support surface (20) is attached transversely to a plurality of leads (18) of the leadframe. A semiconductor die (16) is attached on its active surface to the die support surface such that the active surface is coplanar with the leadframe. Low loop wire bonds (24) electrically connect the die to the leadframe. A resin encapsulant package body (52) is molded around the active surface of the die, the wire bonds, and a portion of the leads. An inactive surface of the die is exposed for enhanced thermal dissipation in addition to enabling a thin package body. External lead configuration of the semiconductor device is not limited.
摘要:
A stackable three dimensional leadless multi-chip module (10) is provided whereby each level of semiconductor device (11) is interconnected to another level through reflowing of solder plated wires (22). Each semiconductor device (11) contains a semiconductor die (24) overmolded by a package body (12) on a PCB substrate (14) having a plurality of edge metal conductors (16) that form half-vias (18). The half-vias (18) at the edges of substrate (14) give the substrate a castellated appearance, where the castellations serve as the self-aligning feature during the stacking of the devices (11). Each device (11) is simply stacked on top of each other without any additional layers to give the semiconductor module (10) a lowest possible profile. A plurality of solder plated wires (22) fits into the half-vias (18) and is solder reflowed to the metal conductors (16) to interconnect the semiconductor devices (11). The wires (22) are bent to enable the module (10) to be surface mounted to a PC board.
摘要:
A method for fabricating and especially for encapsulating a semiconductor device in a plastic package is disclosed. In accordance with one embodiment of the invention the method includes steps of providing an encapsulation mold having a first chamber and a second chamber, with the second chamber spaced outwardly from and substantially surrounding the first chamber. The first chamber is shaped to receive a removable insert. An insert is selected for the particular body type and style which is desired and that insert is secured in the first chamber. The insert has a cavity which is shaped to define the desired encapsulated device package body. A lead frame is provided including a bonding area and a plurality of leads, each lead having a inner portion near the bonding area and an outer portion extending outwardly from the bonding area. A semiconductor device die is secured to the lead frame and the lead frame with the die attached is aligned within the encapsulation mold to place the semiconductor device die and the inner ends of the leads within the cavity defined by the inserts. The outer ends of the leads extend through the second chamber. Plastic material is then injected into the mold to form the device package body about the semiconductor device die. The package body is shaped by the cavity and the inserts and the carrier ring is shaped by the second chamber.
摘要:
A package for containing high performance electronic components, such as high speed integrated circuits (ICs). The package bears a substrate of multiple layers having a cavity therein. Leads may be placed within holes in the substrate and soldered or otherwise electrically connected to conductive patterns or layers in the substrate. A thermally conductive insert is attached to one side of the substate. The insert has a pedestal which protrudes through the cavity in the substrate. An electronic component, such as an IC may then be mounted on the pedestal and electrically connected to a conductive metal pattern on one of the layers of the substrate. This assembly may then be coated with a dielectric material to form the package body, leaving the distal ends of the leads and the back side of the insert exposed. Since the IC chip or other component is directly mounted on the insert, waste heat generated by the chip may be directly channeled outside the package through the insert which effectively forms one wall of the package. The exposed leads may be formed into the desired configuration, including shapes suitable for surface mount technology. The use of a multiple layer substate permits the inclusion of ground and power planes for high performance circuits, such as emitter coupled logic (ECL) gate arrays, within the package itself.