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公开(公告)号：US20090014860A1
公开(公告)日：2009-01-15
申请号：US12011832
申请日：2008-01-29
CPC分类号： H01L25/0652 , H01L25/18 , H01L2224/32145 , H01L2224/48227 , H01L2224/73215 , H01L2224/73265 , H01L2224/92247 , H01L2225/06562 , H01L2924/00012
摘要： A multi-chip stack structure and a manufacturing method thereof are provided. The fabrication method includes the steps of: providing a chip carrier having a first surface and a second surface opposing thereto and at least a first chip and a second chip mounted on the first surface; electrically connecting the chips to the chip carrier by a plurality of bonding wires; and stacking at least a third chip on the first and second chips by a film deposed therebetween, wherein the third chip is stepwise stacked on the first chip and at least a part of the bonding wire connected to the second chip is covered by the film, and electrically connecting the third chip and the chip carrier by a bonding wire, thereby enabling a plurality of chips to be stacked on the chip carrier to enhance the electrical performance of electronic products.
摘要翻译： 提供了一种多芯片堆叠结构及其制造方法。 该制造方法包括以下步骤：提供具有与其相对的第一表面和第二表面的芯片载体和至少安装在第一表面上的第一芯片和第二芯片; 通过多个接合线将芯片电连接到芯片载体上; 并且通过其间放置的膜将第一和第二芯片上的至少第三芯片堆叠起来，其中第三芯片逐步堆叠在第一芯片上，并且连接到第二芯片的键合线的至少一部分被膜覆盖， 并通过接合线电连接第三芯片和芯片载体，从而能够将多个芯片堆叠在芯片载体上，以增强电子产品的电气性能。
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公开(公告)号：US20060223216A1
公开(公告)日：2006-10-05
申请号：US11208269
申请日：2005-08-18
IPC分类号： H01L21/00 , H01L23/495
CPC分类号： H01L27/14618 , H01L24/97 , H01L25/167 , H01L27/14625 , H01L27/14683 , H01L2224/32225 , H01L2224/48247 , H01L2224/73265 , H01L2924/181 , H01L2224/48091 , H01L2924/00014 , H01L2924/00
摘要： A sensor module structure and a method for fabricating the same are proposed. A chip carrier module plate including a plurality of chip carriers is provided, each chip carrier having a first surface and a second surface. At least one semiconductor chip is mounted on and electrically connected to the first surface of each of the chip carriers. An encapsulation body is formed for completely encapsulating the semiconductor chips and the first surfaces of the chip carriers. A singulation process is performed to form individual package units integrated with the semiconductor chips. A sensor chip, a corresponding lens kit and a flexible printed circuit (FPC) board are attached to the second surface of each of the chip carriers, wherein the sensor chip and the FPC board are electrically connected to the chip carrier. This provides the sensor module structure fabricated with simple processes, low costs and high yields.
摘要翻译： 提出了一种传感器模块结构及其制造方法。 提供了包括多个芯片载体的芯片载体模块板，每个芯片载体具有第一表面和第二表面。 至少一个半导体芯片安装在每个芯片载体的第一表面上并电连接到每个芯片载体的第一表面。 形成用于完全封装半导体芯片和芯片载体的第一表面的封装体。 执行单个处理以形成与半导体芯片集成的单个封装单元。 传感器芯片，相应的透镜套件和柔性印刷电路板（FPC）板安装在每个芯片载体的第二表面上，其中传感器芯片和FPC基板电连接到芯片载体。 这提供了以简单的工艺制造的传感器模块结构，低成本和高产量。
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公开(公告)号：US20060145362A1
公开(公告)日：2006-07-06
申请号：US11207472
申请日：2005-08-18
IPC分类号： H01L23/28
CPC分类号： H01L23/3128 , H01L21/561 , H01L21/565 , H01L23/13 , H01L23/49816 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/97 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/4824 , H01L2224/73215 , H01L2224/97 , H01L2924/00014 , H01L2924/01033 , H01L2924/01079 , H01L2924/15311 , H01L2924/181 , H01L2224/85 , H01L2224/83 , H01L2924/00 , H01L2224/05599 , H01L2924/00012
摘要： A semiconductor package and a fabrication method of the same are proposed. A chip formed with a plurality of electrode pads on an active surface thereof, and a substrate having a first surface, a corresponding second surface and at least one opening penetrating therethrough are provided. A part of the electrode pads of the chip are electrically connected to the second surface of the substrate by bonding wires passing through the opening of the substrate, and the rest of the electrode pads of the chip are electrically connected to the first surface of the substrate by conductive bumps. A molding process is performed to form a first encapsulant on the first surface of the substrate for encapsulating the chip and form a second encapsulant on the second surface of the substrate for encapsulating the bonding wires. A plurality of solder balls are implanted on the second surface of the substrate.
摘要翻译： 提出了一种半导体封装及其制造方法。 提供了在其有效表面上形成有多个电极焊盘的芯片，以及具有第一表面，相应的第二表面和穿过其中的至少一个开口的基板。 芯片的电极焊盘的一部分通过接合通过基板的开口的线电连接到基板的第二表面，并且芯片的其余电极焊盘与基板的第一表面电连接 通过导电凸块。 进行成型工艺以在衬底的第一表面上形成第一密封剂，用于封装芯片，并在衬底的第二表面上形成用于封装接合线的第二密封剂。 在基板的第二表面上注入多个焊球。
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公开(公告)号：US07981729B2
公开(公告)日：2011-07-19
申请号：US12818701
申请日：2010-06-18
IPC分类号： H01L21/60
CPC分类号： H01L23/49575 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/78 , H01L24/85 , H01L25/50 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/48496 , H01L2224/49175 , H01L2224/78 , H01L2224/85001 , H01L2924/00014 , H01L2924/01033 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/00
摘要： A multi-chip stack structure and a fabrication method thereof are proposed, including providing a leadframe having a die base and a plurality of leads and disposing a first and a second chips on the two surfaces of the die base respectively; disposing the leadframe on a heating block having a cavity in a wire bonding process with the second chip received in the cavity of the heating block; performing a first wire bonding process to electrically connect the first chip to the leads through a plurality of first bonding wires, and forming a bump on one side of the leads connected with the first bonding wires; disposing the leadframe in an upside down manner to the heating block via the bump with the first chip and the first bonding wires received in the cavity of the heating block; and performing a second wire bonding process to electrically connect the second chip to the leads through a plurality of second bonding wires. The bump is used for supporting the leads to a certain height so as to keep the bonding wires from contacting the heating block and eliminate the need of using a second heating block in the second wire bonding process of the prior art, thereby saving time and costs in a fabrication process. Also, as positions where the first and second bonding wires are bonded to the leads on opposite sides of the leadframe correspond with each other, the conventional problems of adversely affected electrical performance and electrical mismatch can be prevented.
摘要翻译： 提出了一种多芯片堆叠结构及其制造方法，包括提供具有芯片基底和多个引线的引线框架，并分别在模具基座的两个表面上设置第一和第二芯片; 将引线框架布置在具有引线接合工艺中的空腔的加热块上，第二芯片容纳在加热块的空腔中; 执行第一引线接合工艺，以通过多个第一接合线将第一芯片电连接到引线，以及在与第一接合线连接的引线的一侧上形成凸块; 通过第一芯片和第一接合线容纳在加热块的空腔中，通过凸块将引线框倒置放置到加热块， 以及执行第二引线接合处理，以通过多个第二接合线将所述第二芯片电连接到所述引线。 凸块用于将引线支撑到一定高度，以便使接合线不会接触加热块，并且在现有技术的第二引线接合过程中不需要使用第二加热块，从而节省了时间和成本 在制造过程中。 此外，由于第一和第二接合线与引线框架的相对侧上的引线接合的位置彼此对应，可以防止电性能和电不匹配受到不利影响的常规问题。
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公开(公告)号：US20100255635A1
公开(公告)日：2010-10-07
申请号：US12818701
申请日：2010-06-18
IPC分类号： H01L21/60
CPC分类号： H01L23/49575 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/78 , H01L24/85 , H01L25/50 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/48496 , H01L2224/49175 , H01L2224/78 , H01L2224/85001 , H01L2924/00014 , H01L2924/01033 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/00
摘要： A multi-chip stack structure and a fabrication method thereof are proposed, including providing a leadframe having a die base and a plurality of leads and disposing a first and a second chips on the two surfaces of the die base respectively; disposing the leadframe on a heating block having a cavity in a wire bonding process with the second chip received in the cavity of the heating block; performing a first wire bonding process to electrically connect the first chip to the leads through a plurality of first bonding wires, and forming a bump on one side of the leads connected with the first bonding wires; disposing the leadframe in an upside down manner to the heating block via the bump with the first chip and the first bonding wires received in the cavity of the heating block; and performing a second wire bonding process to electrically connect the second chip to the leads through a plurality of second bonding wires. The bump is used for supporting the leads to a certain height so as to keep the bonding wires from contacting the heating block and eliminate the need of using a second heating block in the second wire bonding process of the prior art, thereby saving time and costs in a fabrication process. Also, as positions where the first and second bonding wires are bonded to the leads on opposite sides of the leadframe correspond with each other, the conventional problems of adversely affected electrical performance and electrical mismatch can be prevented.
摘要翻译： 提出了一种多芯片堆叠结构及其制造方法，包括提供具有芯片基底和多个引线的引线框架，并分别在模具基座的两个表面上设置第一和第二芯片; 将引线框架布置在具有引线接合工艺中的空腔的加热块上，第二芯片容纳在加热块的空腔中; 执行第一引线接合工艺，以通过多个第一接合线将第一芯片电连接到引线，以及在与第一接合线连接的引线的一侧上形成凸块; 通过第一芯片和第一接合线容纳在加热块的空腔中，通过凸块将引线框倒置放置到加热块， 以及执行第二引线接合处理，以通过多个第二接合线将所述第二芯片电连接到所述引线。 凸块用于将引线支撑到一定高度，以便使接合线不会接触加热块，并且在现有技术的第二引线接合过程中不需要使用第二加热块，从而节省了时间和成本 在制造过程中。 此外，由于第一和第二接合线与引线框架的相对侧上的引线接合的位置彼此对应，可以防止电性能和电不匹配受到不利影响的常规问题。
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公开(公告)号：US07768106B2
公开(公告)日：2010-08-03
申请号：US12077003
申请日：2008-03-13
IPC分类号： H01L23/495 , H01L21/00
CPC分类号： H01L23/49575 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/78 , H01L24/85 , H01L25/50 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/48496 , H01L2224/49175 , H01L2224/78 , H01L2224/85001 , H01L2924/00014 , H01L2924/01033 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/00
摘要： A multi-chip stack structure and a fabrication method thereof are proposed, including providing a leadframe having a die base and a plurality of leads and disposing a first and a second chips on the two surfaces of the die base respectively; disposing the leadframe on a heating block having a cavity in a wire bonding process with the second chip received in the cavity of the heating block; performing a first wire bonding process to electrically connect the first chip to the leads through a plurality of first bonding wires, and forming a bump on one side of the leads connected with the first bonding wires; disposing the leadframe in an upside down manner to the heating block via the bump with the first chip and the first bonding wires received in the cavity of the heating block; and performing a second wire bonding process to electrically connect the second chip to the leads through a plurality of second bonding wires. The bump is used for supporting the leads to a certain height so as to keep the bonding wires from contacting the heating block and eliminate the need of using a second heating block in the second wire bonding process of the prior art, thereby saving time and costs in a fabrication process. Also, as positions where the first and second bonding wires are bonded to the leads on opposite sides of the leadframe correspond with each other, the conventional problems of adversely affected electrical performance and electrical mismatch can be prevented.
摘要翻译： 提出了一种多芯片堆叠结构及其制造方法，包括提供具有芯片基底和多个引线的引线框架，并分别在模具基座的两个表面上设置第一和第二芯片; 将引线框架布置在具有引线接合工艺中的空腔的加热块上，第二芯片容纳在加热块的空腔中; 执行第一引线接合工艺，以通过多个第一接合线将第一芯片电连接到引线，以及在与第一接合线连接的引线的一侧上形成凸块; 通过第一芯片和第一接合线容纳在加热块的空腔中，通过凸块将引线框倒置放置到加热块， 以及执行第二引线接合处理，以通过多个第二接合线将所述第二芯片电连接到所述引线。 凸块用于将引线支撑到一定高度，以便使接合线不会接触加热块，并且在现有技术的第二引线接合过程中不需要使用第二加热块，从而节省了时间和成本 在制造过程中。 此外，由于第一和第二接合线与引线框架的相对侧上的引线接合的位置彼此对应，可以防止电性能和电不匹配受到不利影响的常规问题。
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公开(公告)号：US20080283994A1
公开(公告)日：2008-11-20
申请号：US12152687
申请日：2008-05-16
CPC分类号： H01L23/49816 , H01L24/48 , H01L24/73 , H01L25/105 , H01L2224/1134 , H01L2224/1308 , H01L2224/1411 , H01L2224/32225 , H01L2224/48227 , H01L2224/73265 , H01L2225/1023 , H01L2225/1058 , H01L2924/00014 , H01L2924/01079 , H01L2924/15174 , H01L2924/15311 , H01L2924/15331 , H01L2924/181 , H01L2924/3511 , H05K3/3436 , H01L2924/00012 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A stacked package structure and fabrication method thereof are disclosed, including providing a substrate having a plurality of stackable solder pads formed on surface thereof for allowing at least one semiconductor chip to be electrically connected to the substrate; forming an encapsulant for encapsulating the semiconductor chip and further exposing the stackable solder pads from the encapsulant, thus forming a lower-layer semiconductor package; forming conductive bumps on at least one stackable solder pad by means of wire bonding such that at least one upper-layer semiconductor package can be mounted via solder balls on the conductive bumps and the stackable solder pads of the lower-layer semiconductor package to form a stacked package structure, wherein, stacking height of the solder balls and the conductive bumps is greater than height of the encapsulant of the lower-layer semiconductor package, thus, when stacking fine pitch semiconductor packages or when warps occur to the upper-layer semiconductor package or the lower-layer semiconductor package, the conductive bumps can compensate for inadequate height caused by solder ball collapse or fill up gaps between the solder balls and the stackable solder pads caused by warps, thereby allowing the solder balls to be able to effectively contact and wet on the substrate of the lower-layer semiconductor package.
摘要翻译： 公开了一种堆叠封装结构及其制造方法，包括提供一种具有形成在其表面上的多个可叠置焊料焊盘的衬底，用于允许至少一个半导体芯片电连接到衬底; 形成用于封装半导体芯片的密封剂，并进一步从可密封剂暴露可堆叠的焊盘，从而形成下层半导体封装; 通过引线接合在至少一个可堆叠的焊盘上形成导电凸块，使得至少一个上层半导体封装可以经由焊球安装在导电凸块和下层半导体封装的可堆叠焊盘上，以形成 堆叠的封装结构，其中，焊球和导电凸块的堆叠高度大于下层半导体封装的密封剂的高度，因此，当堆叠精细间距半导体封装时或当上行半导体封装发生翘曲时 或下层半导体封装，导电凸块可以补偿由焊球塌陷引起的不适当的高度，或填充由经线引起的焊球和可堆叠焊盘之间的间隙，从而允许焊球能够有效地接触和 在下层半导体封装的衬底上湿润。
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公开(公告)号：US20080224289A1
公开(公告)日：2008-09-18
申请号：US12077003
申请日：2008-03-13
IPC分类号： H01L23/495 , H01L21/00
CPC分类号： H01L23/49575 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/78 , H01L24/85 , H01L25/50 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/48496 , H01L2224/49175 , H01L2224/78 , H01L2224/85001 , H01L2924/00014 , H01L2924/01033 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/00
摘要： A multi-chip stack structure and a fabrication method thereof are proposed, including providing a leadframe having a die base and a plurality of leads and disposing a first and a second chips on the two surfaces of the die base respectively; disposing the leadframe on a heating block having a cavity in a wire bonding process with the second chip received in the cavity of the heating block; performing a first wire bonding process to electrically connect the first chip to the leads through a plurality of first bonding wires, and forming a bump on one side of the leads connected with the first bonding wires; disposing the leadframe in an upside down manner to the heating block via the bump with the first chip and the first bonding wires received in the cavity of the heating block; and performing a second wire bonding process to electrically connect the second chip to the leads through a plurality of second bonding wires. The bump is used for supporting the leads to a certain height so as to keep the bonding wires from contacting the heating block and eliminate the need of using a second heating block in the second wire bonding process of the prior art, thereby saving time and costs in a fabrication process. Also, as positions where the first and second bonding wires are bonded to the leads on opposite sides of the leadframe correspond with each other, the conventional problems of adversely affected electrical performance and electrical mismatch can be prevented.
摘要翻译： 提出了一种多芯片堆叠结构及其制造方法，包括提供具有芯片基底和多个引线的引线框架，并分别在模具基座的两个表面上设置第一和第二芯片; 将引线框架布置在具有引线接合工艺中的空腔的加热块上，第二芯片容纳在加热块的空腔中; 执行第一引线接合工艺，以通过多个第一接合线将第一芯片电连接到引线，以及在与第一接合线连接的引线的一侧上形成凸块; 通过第一芯片和第一接合线容纳在加热块的空腔中，通过凸块将引线框倒置放置到加热块， 以及执行第二引线接合处理，以通过多个第二接合线将所述第二芯片电连接到所述引线。 凸块用于将引线支撑到一定高度，以便使接合线不会接触加热块，并且在现有技术的第二引线接合过程中不需要使用第二加热块，从而节省了时间和成本 在制造过程中。 此外，由于第一和第二接合线与引线框架的相对侧上的引线接合的位置彼此对应，可以防止电性能和电不匹配受到不利影响的常规问题。
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19.发明申请Multi-chip semiconductor device having leads and method for fabricating the same 审中-公开具有引线的多芯片半导体器件及其制造方法公开(公告)号：US20080283982A1
公开(公告)日：2008-11-20
申请号：US12152802
申请日：2008-05-15
IPC分类号： H01L21/58 , H01L23/495
CPC分类号： H05K1/141 , H01L23/3121 , H01L23/49811 , H01L23/49816 , H01L23/49861 , H01L24/48 , H01L24/81 , H01L24/85 , H01L24/97 , H01L25/0655 , H01L2224/48091 , H01L2224/48247 , H01L2224/81801 , H01L2224/85 , H01L2224/97 , H01L2924/00014 , H01L2924/01033 , H01L2924/01082 , H01L2924/15311 , H01L2924/181 , H05K3/3421 , H05K3/3436 , H05K2201/1034 , H05K2201/10659 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： The present invention proposes a multi-chip semiconductor device having leads and a method for fabricating the same. The method includes the steps of: providing a substrate having a plurality of connection pads disposed on a surface thereof; mounting a plurality of semiconductor chips on the surface of the substrate, and electrically connecting the semiconductor chips to the surface of the substrate; forming an encapsulant on the substrate to encapsulate the semiconductor chips and expose the connection pads to form a package unit; and providing a lead frame having a plurality of leads, and electrically connecting the connection pads exposed from the package unit to the leads of the lead frame to form a multi-chip semiconductor device having leads, thereby forming a multi-chip semiconductor device having leads. By the multi-chip semiconductor device and the method for fabricating the same as proposed in the present invention, problems like poor reliability caused by stress induced by several types of materials in a semiconductor package into which a substrate and leads are integrated, moisture absorption by an encapsulated substrate, and cracks developed as a result of moisture absorption by the substrate can be avoided.
摘要翻译： 本发明提出一种具有引线的多芯片半导体器件及其制造方法。 该方法包括以下步骤：提供具有设置在其表面上的多个连接焊盘的基板; 将多个半导体芯片安装在所述基板的表面上，并且将所述半导体芯片电连接到所述基板的表面; 在衬底上形成密封剂以封装半导体芯片并暴露连接焊盘以形成封装单元; 并且提供具有多个引线的引线框架，并且将从封装单元暴露的连接焊盘电连接到引线框架的引线以形成具有引线的多芯片半导体器件，从而形成具有引线的多芯片半导体器件 。 通过本发明中提出的多芯片半导体器件及其制造方法，由半导体封装中由几种材料引起的应力引起的可靠性差的问题，其中衬底和引线被集成到其中，由于 可以避免被封装的基材和由于基材吸湿而显影的裂纹。
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公开(公告)号：US20080230913A1
公开(公告)日：2008-09-25
申请号：US12077223
申请日：2008-03-18
IPC分类号： H01L23/488 , H01L21/304
CPC分类号： H01L21/78 , H01L21/6835 , H01L21/76898 , H01L23/481 , H01L24/11 , H01L24/12 , H01L24/48 , H01L24/81 , H01L25/0657 , H01L25/50 , H01L2221/68372 , H01L2224/05001 , H01L2224/05147 , H01L2224/05155 , H01L2224/05611 , H01L2224/1147 , H01L2224/1184 , H01L2224/1308 , H01L2224/13083 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/2518 , H01L2224/48091 , H01L2224/48227 , H01L2224/81203 , H01L2224/81801 , H01L2225/06513 , H01L2225/06551 , H01L2225/06562 , H01L2924/00013 , H01L2924/00014 , H01L2924/01013 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2224/13099 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： The invention provides a stackable semiconductor device and a fabrication method thereof, including providing a wafer having a plurality of dies mounted thereon, both the die and the wafer having an active surface and a non-active surface opposing one another respectively, wherein each die has a plurality of solder pads formed on the active surface thereof and a groove formed between adjacent solder pads to form a first metal layer therein that is electrically connected to the solder pads; subsequently thinning the non-active surface of the wafer to where the grooves are located to expose the first metal layer therefrom, and forming a second metal layer on the non-active surface of the wafer for electrically connecting with the first metal layer; and separating the dies to form a plurality of stackable semiconductor devices. Thereby, the first and second metal layers formed on the active surface and the non-active surface of the semiconductor device can be stacked and connected to constitute a multi-die stack structure, thereby increasing integration without increasing the area of the stacked dies. Further, the problems known in the prior art of poor electrical connection, complicated manufacturing process and increased cost as a result of using wire bonding and TSV can be avoided.
摘要翻译： 本发明提供了一种可堆叠半导体器件及其制造方法，包括提供具有安装在其上的多个管芯的晶片，晶粒和晶片两者分别具有相互相对的有源表面和非有效表面，其中每个管芯具有 形成在其有效表面上的多个焊盘和形成在相邻焊盘之间的槽，以在其中形成电连接到焊盘的第一金属层; 随后使所述晶片的非活性表面变薄到所述凹槽所在的位置以暴露出所述第一金属层，以及在所述晶片的非活性表面上形成用于与所述第一金属层电连接的第二金属层; 以及分离所述管芯以形成多个可堆叠的半导体器件。 由此，形成在半导体器件的有源表面和非有源表面上的第一和第二金属层可以被堆叠和连接以构成多管芯堆叠结构，从而增加集成度而不增加堆叠管芯的面积。 此外，可以避免由于使用引线接合和TSV而导致的不良电连接，复杂的制造工艺和增加的成本的现有技术中已知的问题。
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