公开(公告)号：US20160329289A1

公开(公告)日：2016-11-10

申请号：US14702984

申请日：2015-05-04

Applicant: GLOBALFOUNDRIES INC.

Inventor： Thomas J. Brunschwiler ,  Eric D. Perfecto ,  Jonas Zuercher

IPC: H01L23/00 ,  B23K31/02 ,  B23K1/00

CPC classification number: H01L24/10 ,  B23K1/0016 ,  B23K1/0053 ,  B23K1/008 ,  B23K1/012 ,  B23K1/20 ,  B23K31/02 ,  B23K35/02 ,  B23K2101/42 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/26 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L2224/10175 ,  H01L2224/1132 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13294 ,  H01L2224/133 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13687 ,  H01L2224/16227 ,  H01L2224/16505 ,  H01L2224/2929 ,  H01L2224/29387 ,  H01L2224/32225 ,  H01L2224/812 ,  H01L2224/81203 ,  H01L2224/8121 ,  H01L2224/8123 ,  H01L2224/81815 ,  H01L2224/81909 ,  H01L2224/81911 ,  H01L2224/8192 ,  H01L2224/81986 ,  H01L2224/83102 ,  H01L2224/92125 ,  H01L2924/01322 ,  H01L2924/07025 ,  H01L2924/3651 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/01047 ,  H01L2924/00012 ,  H01L2924/053 ,  H01L2924/0665 ,  H01L2924/05442 ,  H01L2224/81948

Abstract: A method of forming a stacked surface arrangement for semiconductor devices includes joining a first surface to a second surface with a solder bump, the solder bump including a substantially pure first metal; depositing nanoparticles of a second metal onto a surface of the solder bump; performing an annealing operation to form a film of the second metal on the surface of the solder bump; and performing a reflow or a second annealing operation to transform the solder bump from the substantially pure first metal to an alloy of the first metal and the second metal.

Abstract translation: 一种形成用于半导体器件的堆叠表面布置的方法包括：将第一表面与第二表面焊接在一起，所述焊料凸块包括基本上纯的第一金属; 将第二金属的纳米颗粒沉积到所述焊料凸块的表面上; 执行退火操作以在所述焊料凸块的表面上形成所述第二金属的膜; 以及执行回流或第二退火操作以将焊料凸块从基本上纯的第一金属转变为第一金属和第二金属的合金。

公开(公告)号：US20160307860A1

公开(公告)日：2016-10-20

申请号：US15191723

申请日：2016-06-24

Applicant: GLOBALFOUNDRIES INC.

Inventor： Charles L. Arvin ,  Harry D. Cox ,  Eric D. Perfecto ,  Thomas A. Wassick

IPC: H01L23/00 ,  H01L25/065 ,  H01L25/00 ,  H01L21/683

CPC classification number: H01L24/11 ,  H01L21/6835 ,  H01L21/76829 ,  H01L21/76838 ,  H01L21/76841 ,  H01L23/53228 ,  H01L23/53238 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2224/0345 ,  H01L2224/0346 ,  H01L2224/0347 ,  H01L2224/0361 ,  H01L2224/03849 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/0558 ,  H01L2224/05611 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/0566 ,  H01L2224/10145 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/13005 ,  H01L2224/13006 ,  H01L2224/13016 ,  H01L2224/1308 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/1316 ,  H01L2224/16145 ,  H01L2224/16238 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2924/01029 ,  H01L2924/01028 ,  H01L2924/00014 ,  H01L2924/013 ,  H01L2224/13164 ,  H01L2924/01026 ,  H01L2924/206 ,  H01L2924/01047

Abstract: A three dimensional multi-die package includes a first die and second die. The first die includes a contact attached to solder. The second die is thinned by adhesively attaching a handler to a top side of the second die and thinning a bottom side of the second die. The second die includes a multilayer contact of layered metallurgy that inhibits transfer of adhesive thereto. The layered metallurgy includes at least one layer that is wettable to the solder. The multilayer contact may include a Nickel layer, a Copper layer upon the Nickel layer, and a Nickel-Iron layer upon the Copper layer. The multilayer contact may also include a Nickel layer, a Copper-Tin layer upon the Nickel layer, and a Tin layer upon the Copper-Tin layer.

Abstract translation: 三维多管芯封装包括第一管芯和第二管芯。 第一个模具包括一个连接到焊料的触点。 通过将处理器粘合地附接到第二管芯的顶侧并使第二管芯的底侧变薄来减小第二管芯。 第二模具包括抑制粘合剂转移的层状冶金的多层接触。 层状冶金包括至少一层可润湿的焊料。 多层接触可以包括镍层，镍层上的铜层和铜层上的镍 - 铁层。 多层接触还可以包括镍层，镍层上的铜 - 锡层和在铜 - 锡层上的锡层。

公开(公告)号：US09379007B2

公开(公告)日：2016-06-28

申请号：US13874509

申请日：2013-05-01

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Charles L. Arvin ,  Kenneth Bird ,  Charles C. Goldsmith ,  Sung K. Kang ,  Minhua Lu ,  Clare J. McCarthy ,  Eric D. Perfecto ,  Srinivasa S. N. Reddy ,  Krystyna W. Semkow ,  Thomas A. Wassick

IPC: H01L21/321 ,  H01L21/768 ,  H01L23/00

CPC classification number: H01L21/7685 ,  H01L21/321 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/742 ,  H01L24/81 ,  H01L2224/0382 ,  H01L2224/0401 ,  H01L2224/11003 ,  H01L2224/11005 ,  H01L2224/1111 ,  H01L2224/1131 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/1184 ,  H01L2224/11849 ,  H01L2224/11903 ,  H01L2224/13017 ,  H01L2224/13027 ,  H01L2224/13083 ,  H01L2224/13084 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13157 ,  H01L2224/1316 ,  H01L2224/13562 ,  H01L2224/13566 ,  H01L2224/1357 ,  H01L2224/136 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/81191 ,  H01L2224/81801 ,  H01L2924/181 ,  H01L2924/01028 ,  H01L2924/014 ,  H01L2924/01047 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Embodiments of the invention include a lead-free solder interconnect structure and methods for making a lead-free interconnect structure. The structure includes a semiconductor substrate having a last metal layer, a copper pedestal attached to the last metal layer, a barrier layer attached to the copper pedestal, a barrier protection layer attached to the barrier layer, and a lead-free solder layer contacting at least one side of the copper pedestal.

Abstract translation: 本发明的实施例包括无铅焊料互连结构和用于制造无铅互连结构的方法。 该结构包括具有最后金属层的半导体衬底，附着于最后金属层的铜基座，附着于铜基座的阻挡层，与阻挡层连接的阻挡保护层，以及与该阻挡层相接触的无铅焊料层 铜底座的最小一侧。

公开(公告)号：US20160056072A1

公开(公告)日：2016-02-25

申请号：US14467191

申请日：2014-08-25

Applicant: GLOBALFOUNDRIES, Inc.

Inventor： Charles L. Arvin ,  Harry D. Cox ,  Eric D. Perfecto ,  Thomas A. Wassick

IPC: H01L21/768 ,  H01L23/532

CPC classification number: H01L24/11 ,  H01L21/6835 ,  H01L21/76829 ,  H01L21/76838 ,  H01L21/76841 ,  H01L23/53228 ,  H01L23/53238 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2224/0345 ,  H01L2224/0346 ,  H01L2224/0347 ,  H01L2224/0361 ,  H01L2224/03849 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/0558 ,  H01L2224/05611 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/0566 ,  H01L2224/10145 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/13005 ,  H01L2224/13006 ,  H01L2224/13016 ,  H01L2224/1308 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/1316 ,  H01L2224/16145 ,  H01L2224/16238 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2924/01029 ,  H01L2924/01028 ,  H01L2924/00014 ,  H01L2924/013 ,  H01L2224/13164 ,  H01L2924/01026 ,  H01L2924/206 ,  H01L2924/01047

Abstract: A three dimensional multi-die package includes a first die and second die. The first die includes a contact attached to solder. The second die is thinned by adhesively attaching a handler to a top side of the second die and thinning a bottom side of the second die. The second die includes a multilayer contact of layered metallurgy that inhibits transfer of adhesive thereto. The layered metallurgy includes at least one layer that is wettable to the solder. The multilayer contact may include a Nickel layer, a Copper layer upon the Nickel layer, and a Nickel-Iron layer upon the Copper layer. The multilayer contact may also include a Nickel layer, a Copper-Tin layer upon the Nickel layer, and a Tin layer upon the Copper-Tin layer.

Abstract translation: 三维多管芯封装包括第一管芯和第二管芯。 第一个模具包括一个连接到焊料的触点。 通过将处理器粘合地附接到第二管芯的顶侧并使第二管芯的底侧变薄来减小第二管芯。 第二模具包括抑制粘合剂转移的层状冶金的多层接触。 层状冶金包括至少一层可润湿的焊料。 多层接触可以包括镍层，镍层上的铜层和铜层上的镍 - 铁层。 多层接触还可以包括镍层，镍层上的铜 - 锡层和在铜 - 锡层上的锡层。