公开(公告)号：US5040186A

公开(公告)日：1991-08-13

申请号：US564679

申请日：1990-08-07

申请人： Ralph A. Logan ,  Tawee Tanbun-Ek ,  Henryk Temkin

发明人： Ralph A. Logan ,  Tawee Tanbun-Ek ,  Henryk Temkin

IPC分类号： H01L33/00 ,  H01L33/06 ,  H01S5/20 ,  H01S5/34 ,  H01S5/343

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/0062 ,  H01S5/343 ,  H01S5/34313 ,  H01S5/3434 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/3406 ,  H01S5/3409 ,  H01S5/34306

摘要： Disclosed is a graded index separate confinement heterostructure quantum well (GRIN-SCH QW) laser with continuously graded, substantially index matched InGaAsP confinement layer. The inventive device is well adapted for high power output in the wavelength region 1.2-1.68 .mu.m. In particular, it can readily be designed to have an output wavelength that makes it suitable as pump source for Er-doped optical fiber amplifiers. A method of manufacturing a laser according to the invention is also disclosed.

摘要翻译： 公开了具有连续梯度，基本上为指数匹配的InGaAsP限制层的分级指数分离限制异质结构量子阱（GRIN-SCH QW）激光器。 本发明的装置适用于在1.2-1.68μm的波长区域中的高功率输出。 特别地，它可以容易地设计成具有使其适合作为掺铒光纤放大器的泵浦源的输出波长。 还公开了根据本发明的制造激光器的方法。

公开(公告)号：US4897361A

公开(公告)日：1990-01-30

申请号：US132757

申请日：1987-12-14

申请人： Lloyd R. Harriott ,  Morton B. Panish ,  Henryk Temkin

发明人： Lloyd R. Harriott ,  Morton B. Panish ,  Henryk Temkin

IPC分类号： H01L21/302 ,  H01L21/027 ,  H01L21/263 ,  H01L21/30 ,  H01L21/3065 ,  H01L21/308

CPC分类号： H01L21/3086 ,  H01L21/2633 ,  H01L21/3081 ,  H01L21/3083 ,  Y10S148/051 ,  Y10S148/072 ,  Y10S148/084 ,  Y10S148/106 ,  Y10S148/149

摘要： When high-vacuum methods are used in the manufacture of miniaturized devices such as, e.g., semiconductor integrated-circuit devices, device layers on a substrate are preferably patterned without breaking of the vacuum. Preferred patterning involves deposition of a semiconductor mask layer, generation of the pattern in the mask layer by ion deflected-beam writing, and transfer of the pattern by dry etching. When the mask layer is an epitaxial layer, further epitaxial layer deposition after patterning may proceed without removal of remaining mask layer material.

公开(公告)号：US4772924A

公开(公告)日：1988-09-20

申请号：US129942

申请日：1987-11-25

申请人： John C. Bean ,  David V. Lang ,  Thomas P. Pearsall ,  Roosevelt People ,  Henryk Temkin

发明人： John C. Bean ,  David V. Lang ,  Thomas P. Pearsall ,  Roosevelt People ,  Henryk Temkin

IPC分类号： H01L29/161 ,  H01L31/0352 ,  H01L31/107 ,  H01L27/12

CPC分类号： B82Y20/00 ,  H01L31/035254 ,  H01L31/1075

摘要： A strained layer superlattice comprising Ge.sub.x Si.sub.1-x layers interleaved with Si layers is an excellent photodetector at infrared wavelengths due to the large shift in bandgap caused by the strain in the superlattice.

摘要翻译： 包含与Si层交错的GexSi1-x层的应变层超晶格是由于超晶格中的应变引起的带隙大的偏移而在红外波长处的优异的光电检测器。

公开(公告)号：US4701995A

公开(公告)日：1987-10-27

申请号：US924518

申请日：1986-10-29

申请人： Gerald J. Dolan ,  Ralph A. Logan ,  Henryk Temkin ,  Daniel P. Wilt

发明人： Gerald J. Dolan ,  Ralph A. Logan ,  Henryk Temkin ,  Daniel P. Wilt

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01S5/00 ,  H01S5/12 ,  H01S5/227 ,  H01L21/66 ,  H01L21/208 ,  H01L21/36 ,  H01S3/19

CPC分类号： H01S5/12 ,  H01S5/2275

摘要： A buried-heterostructure distributed feedback laser is described, including a grating structure at a surface of a nonplanar cladding layer. The grating structure can be made by transfer of a pattern by ion milling, the pattern being defined in an ion-beam resist layer, e.g., by direct-writing electron-beam exposure. Low-threshold, high-power lasers are obtained with a commercially favorable yield.

摘要翻译： 描述了掩埋异质结分布反馈激光器，其包括在非平面包层的表面处的光栅结构。 光栅结构可以通过离子研磨传递图案来制作，该图案例如通过直接写入电子束曝光在离子束抗蚀剂层中限定。 以商业上有利的产率获得低阈值的大功率激光器。

公开(公告)号：US07627014B2

公开(公告)日：2009-12-01

申请号：US11090260

申请日：2005-03-28

申请人： Jack L. Jewell ,  Henryk Temkin

发明人： Jack L. Jewell ,  Henryk Temkin

IPC分类号： H01S5/00

CPC分类号： H01S5/34313 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/105 ,  H01L33/30 ,  H01L33/32 ,  H01S5/0211 ,  H01S5/1221 ,  H01S5/18311 ,  H01S5/18358 ,  H01S5/2215 ,  H01S5/2231 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/3206 ,  H01S5/3235 ,  H01S5/32366 ,  H01S5/32383 ,  H01S5/34 ,  H01S5/3403 ,  H01S5/3406 ,  H01S5/342 ,  H01S5/343 ,  H01S5/34306 ,  H01S2302/00

摘要： Several methods are used in novel ways with newly identified and viable parameters to decrease the peak transition energies of the pseudomorphic InGaAs/GaAs heterostructures. These techniques, taken separately or in combination, suffice to permit operation of light emitting devices at wavelengths of 1.3 μm or greater of light-emitting electro-optic devices. These methods or techniques, by example, include: (1) utilizing new superlattice structures having high In concentrations in the active region, (2) utilizing strain compensation to increase the usable layer thickness for quantum wells with appropriately high In concentrations, (3) utilizing appropriately small amounts of nitrogen (N) in the pseudomorphic InGaAsN/GaAs laser structure, and (4) use of nominal (111) oriented substrates to increase the usable layer thickness for quantum wells with appropriately high In concentrations. In all of the above techniques, gain offset may be utilized in VCSELs to detune the emission energy lower than the peak transition energy, by about 25 meV or even more, via appropriate DBR spacing. Gain offset may also be utilized in some forms of in-plane lasers. Increased temperature may also be used to decrease peak transition energy (and therefore the emission energy) by about 50 meV/100° C. All these techniques are furthermore applicable to other material systems, for example, extending the emission wavelength for laser diodes grown on InP substrates. Additionally, structures which utilize the above techniques are discussed.

摘要翻译： 以新颖的方式使用几种方法，用新的识别和可行的参数来降低伪晶InGaAs / GaAs异质结构的峰跃迁能。 单独或组合使用的这些技术足以允许在发光电光器件的1.3μm或更大的波长处操作发光器件。 这些方法或技术例如包括：（1）利用在有源区域中具有高In浓度的新超晶格结构，（2）利用应变补偿增加适当高浓度的量子阱的可用层厚度，（3） 在伪晶InGaAsN / GaAs激光器结构中适当地使用少量的氮（N），以及（4）使用标称（111）取向的衬底，以增加适当高的In浓度的量子阱的可用层厚度。 在所有上述技术中，增益偏移可以用于VCSEL中，以通过适当的DBR间隔将低于峰值跃迁能量的发射能量去除约25meV或甚至更多。 在某些形式的平面内激光器中也可以使用增益偏移。 也可以使用增加的温度来将峰值转变能量（因此发射能量）降低约50meV / 100℃。所有这些技术还可应用于其它材料系统，例如，扩展生长在激光二极管上的激光二极管的发射波长 InP衬底。 另外，讨论了利用上述技术的结构。

公开(公告)号：US06580850B1

公开(公告)日：2003-06-17

申请号：US09722100

申请日：2000-11-24

申请人： Rudolf Feodor Kazarinov ,  Nikolai Michael Stelmakh ,  Henryk Temkin

发明人： Rudolf Feodor Kazarinov ,  Nikolai Michael Stelmakh ,  Henryk Temkin

IPC分类号： G02B626

CPC分类号： H01S5/14 ,  G02B6/12004 ,  G02B6/1228 ,  G02B6/125 ,  G02B6/14 ,  G02B6/4201 ,  G02B6/4206 ,  G02B2006/12102 ,  G02B2006/12152 ,  G02B2006/12195 ,  H01S5/1014 ,  H01S5/146

摘要： An optical waveguide mode transformer has a substrate supporting a high refractive index core layer surrounded by lower refractive index cladding. The core layer includes a wide input waveguide section to accept a multimode, including a fundamental mode, light input. The input waveguide section is coupled to a narrow output waveguide section by a tapered region having a taper length enabling adiabatic transfer of the fundamental mode of the multimode light from the wide input waveguide section to the output waveguide section while suppressing(stripping) other modes of the multimode light input. The narrow output waveguide section supports a single mode light output comprising said fundamental mode. The core layer is contoured to include a localized upstanding ridge intermediate opposite lateral sides of the core layer. The output waveguide section includes a portion having a real index step between the core layer and cladding layers, and advantageously is functional to output a light beam having similar vertical and horizontal divergences.

摘要翻译： 光波导模式变压器具有支撑由折射率较低的包层围绕的高折射率芯层的衬底。 芯层包括宽输入波导部分，以接受多模，包括基本模式，光输入。 输入波导部分通过锥形区域耦合到窄输出波导部分，该锥形区域具有能够将多模光的基模从宽输入波导部分绝对转移到输出波导部分，同时抑制（剥离）其它模式 多模光输入。 窄输出波导部分支持包括所述基模的单模光输出。 核心层的轮廓是包括位于芯层的相对侧面的局部直立脊。 输出波导部分包括在芯层和包覆层之间具有实际折射率台阶的部分，并且有利地用于输出具有相似的垂直和水平分歧的光束。

公开(公告)号：US06434303B1

公开(公告)日：2002-08-13

申请号：US09616816

申请日：2000-07-14

申请人： Henryk Temkin ,  Rudolf Feodor Kazarinov

发明人： Henryk Temkin ,  Rudolf Feodor Kazarinov

IPC分类号： G02B642

CPC分类号： G02B6/12011 ,  G02B2006/12119

摘要： An optical waveguide device comprising a free space region, suitably provided by a slab waveguide, having optical signal ports for coupling to input and output waveguide sections and an optical waveguide grating including an array of grating waveguides coupling the free space region to a reflector surface to provide a folded structure. Dielectric waveguide structures are preferred. The grating includes tapered optical waveguide sections laterally spaced and optically isolated from each other which extend from the free space region, with the grating waveguides continuing as extensions of the tapered waveguide sections. Each of the grating waveguides differs in length from a neighboring grating waveguide by a constant increment, preferably an optical path length increment. The grating waveguides also include intermediate curved portions having respective curvatures which increase progressively, preferably in an approximately parabolic manner, according to the sequential location of the grating waveguides from a reference grating waveguide in the array.

摘要翻译： 一种光波导装置，包括由平板波导适当地提供的自由空间区域，其具有用于耦合到输入和输出波导部分的光信号端口和包括将自由空间区域耦合到反射器表面的光栅波导阵列的光波导光栅， 提供折叠结构。 电介质波导结构是优选的。 光栅包括从自由空间区域延伸的彼此侧向间隔开和光学隔离的锥形光波导部分，光栅波导连续作为锥形波导部分的延伸。 每个光栅波导的长度与相邻的光栅波导的长度不同，最好是光程长度增量。 光栅波导还包括具有相应曲率的中间弯曲部分，其根据阵列中的参考光栅波导的光栅波导的顺序位置逐渐增加，优选地以大致抛物线方式增加。

公开(公告)号：US06359920B1

公开(公告)日：2002-03-19

申请号：US09320945

申请日：1999-05-26

申请人： Jack L. Jewell ,  Henryk Temkin

发明人： Jack L. Jewell ,  Henryk Temkin

IPC分类号： H01S5343

CPC分类号： H01S5/34313 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/105 ,  H01L33/30 ,  H01L33/32 ,  H01S5/0211 ,  H01S5/1221 ,  H01S5/18311 ,  H01S5/18358 ,  H01S5/2215 ,  H01S5/2231 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/3206 ,  H01S5/3235 ,  H01S5/32366 ,  H01S5/32383 ,  H01S5/34 ,  H01S5/3403 ,  H01S5/3406 ,  H01S5/342 ,  H01S5/343 ,  H01S5/34306 ,  H01S2302/00

摘要： Several methods are used in novel ways with newly identified and viable parameters to decrease the peak transition energies of the pseudomorphic InGaAs/GaAs heterostructures. These techniques, taken separately or in combination, suffice to permit operation of light emitting devices at wavelengths of 1.3 &mgr;m or greater of light-emitting electro-optic devices. These methods or techniques, by example, include: (1) utilizing new superlattice structures having high In concentrations in the active region, (2) utilizing strain compensation to increase the usable layer thickness for quantum wells with appropriately high In concentrations, (3) utilizing appropriately small amounts of nitrogen (N) in the pseudomorphic InGaAsN/GaAs laser structure, and (4) use of nominal (111) oriented substrates to increase the usable layer thickness for quantum wells with appropriately high In concentrations. In all of the above techniques, gain offset may be utilized in VCSELs to detune the emission energy lower than the peak transition energy, by about 25 meV or even more, via appropriate DBR spacing. Gain offset may also be utilized in some forms of in-plane lasers. Increased temperature may also be used to decrease peak transition energy (and therefore the emission energy) by about 50 meV/100° C. All these techniques are furthermore applicable to other material systems, for example, extending the emission wavelength for laser diodes grown on InP substrates. Additionally, structures which utilize the above techniques are discussed.

摘要翻译： 以新颖的方式使用几种方法，用新的识别和可行的参数来降低伪晶InGaAs / GaAs异质结构的峰跃迁能。 单独或组合使用的这些技术足以允许在发光电光器件的1.3μm或更大的波长处操作发光器件。 这些方法或技术例如包括：（1）利用在有源区域中具有高In浓度的新超晶格结构，（2）利用应变补偿增加适当高浓度的量子阱的可用层厚度，（3） 在伪晶InGaAsN / GaAs激光器结构中适当地使用少量的氮（N），以及（4）使用标称（111）取向的衬底，以增加适当高的In浓度的量子阱的可用层厚度。 在所有上述技术中，增益偏移可以用于VCSEL中，以通过适当的DBR间隔将低于峰值跃迁能量的发射能量去除约25meV或甚至更多。 在某些形式的平面内激光器中也可以使用增益偏移。 也可以使用增加的温度来将峰值转变能量（因此发射能量）降低约50meV / 100℃。所有这些技术还可应用于其它材料系统，例如，扩展生长在激光二极管上的激光二极管的发射波长 InP衬底。 另外，讨论了利用上述技术的结构。

公开(公告)号：US5825796A

公开(公告)日：1998-10-20

申请号：US721589

申请日：1996-09-25

申请人： Jack L. Jewell ,  Henryk Temkin

发明人： Jack L. Jewell ,  Henryk Temkin

IPC分类号： H01L33/06 ,  H01L33/10 ,  H01L33/30 ,  H01L33/32 ,  H01S5/00 ,  H01S5/02 ,  H01S5/183 ,  H01S5/22 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19 ,  H01L29/06 ,  H01L31/0328 ,  H01L33/00

CPC分类号： H01S5/34313 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/30 ,  H01L33/32 ,  H01S5/18311 ,  H01S5/2231 ,  H01S5/3235 ,  H01S5/34 ,  H01S5/343 ,  H01L33/105 ,  H01S2302/00 ,  H01S5/0211 ,  H01S5/1221 ,  H01S5/18358 ,  H01S5/2215 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/3206 ,  H01S5/32366 ,  H01S5/32383 ,  H01S5/3403 ,  H01S5/3406 ,  H01S5/342 ,  H01S5/34306

摘要： Several methods are used in novel ways with newly identified and viable parameters to decrease the peak transition energies of the pseudomorphic InGaAs/GaAs heterostructures. These techniques, taken separately or in combination, suffice to permit operation of light emitting devices at wavelengths of 1.3 .mu.m or greater of light-emitting electro-optic devices. These methods or techniques, by example, include: (1) utilizing new superlattice structures having high In concentrations in the active region, (2) utilizing strain compensation to increase the usable layer thickness for quantum wells with appropriately high In concentrations, (3) utilizing appropriately small amounts of nitrogen (N) in the pseudomorphic InGaAsN/GaAs laser structure, and (4) use of nominal (111) oriented substrates to increase the usable layer thickness for quantum wells with appropriately high In concentrations. In all of the above techniques, gain offset may be utilized in VCSELs to detune the emission energy lower than the peak transition energy, by about 25 meV or even more, via appropriate DBR spacing. Gain offset may also be utilized in some forms of in-plane lasers. Increased temperature may also be used to decrease peak transition energy (and therefore the emission energy) by about 50 meV/100.degree. C. All these techniques are furthermore applicable to other material systems, for example, extending the emission wavelength for laser diodes grown on InP substrates. Additionally, structures which utilize the above techniques are discussed.

摘要翻译： 以新颖的方式使用几种方法，用新的识别和可行的参数来降低伪晶InGaAs / GaAs异质结构的峰跃迁能。 单独或组合使用的这些技术足以允许在发光电光器件的1.3μm或更大的波长处操作发光器件。 这些方法或技术例如包括：（1）利用在有源区域中具有高In浓度的新超晶格结构，（2）利用应变补偿增加适当高浓度的量子阱的可用层厚度，（3） 在伪晶InGaAsN / GaAs激光器结构中适当地使用少量的氮（N），以及（4）使用标称（111）取向的衬底，以增加适当高的In浓度的量子阱的可用层厚度。 在所有上述技术中，增益偏移可以用于VCSEL中，以通过适当的DBR间隔将低于峰值跃迁能量的发射能量去除约25meV或甚至更多。 在某些形式的平面内激光器中也可以使用增益偏移。 也可以使用增加的温度来将峰值转变能量（因此发射能量）降低约50meV / 100℃。所有这些技术还可应用于其他材料系统，例如，扩展生长在激光二极管上的激光二极管的发射波长 InP衬底。 另外，讨论了利用上述技术的结构。

公开(公告)号：US5288657A

公开(公告)日：1994-02-22

申请号：US608093

申请日：1990-11-01

申请人： Anatoly Feygenson ,  Henryk Temkin ,  Yuh-Lin Wang

发明人： Anatoly Feygenson ,  Henryk Temkin ,  Yuh-Lin Wang

IPC分类号： H01L21/20 ,  H01L21/205 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/308

CPC分类号： H01L21/3081 ,  H01L21/02392 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02639 ,  H01L21/30621 ,  Y10S148/05 ,  Y10S148/11 ,  Y10S438/974

摘要： Expedient fabrication of fine-featured integrated circuits entails aperture pattern delineation to produce a masking layer atop a semiconductor body followed by insertion within a controlled atmosphere chamber within which device-functional layered material is epitaxially grown within apertures. Critical, device-consequential properties of epitaxial material is assured by removal of a thin surface layer of material revealed during delineation. Such removal, sufficient to eliminate meaningful contamination and/or crystalline damage introduced during delineation, is of sufficiently small quantity as to be accommodated within the chamber. Under most circumstances, the controlled atmosphere is at reduced pressure as required for e.g. MOMBE epitaxial growth.

摘要翻译： 精细特征集成电路的有利制造需要孔径图案描绘，以在半导体主体顶部产生掩蔽层，然后插入受控气氛室内，其中器件功能分层材料在孔内外延生长。 通过去除在描绘过程中显露的材料的薄表面层来确保外延材料的关键的器件结果性质。 足以消除在描绘期间引入的有意义的污染和/或结晶损伤的这种去除足够小以容纳在室内。 在大多数情况下，受控气氛处于如下所需的减压下。 MOMBE外延生长。