LED Arrangement
    13.
    发明申请
    LED Arrangement 有权
    LED排列

    公开(公告)号:US20070166853A1

    公开(公告)日:2007-07-19

    申请号:US11686525

    申请日:2007-03-15

    IPC分类号: H01L21/52

    摘要: The invention concerns an LED arrangement with at least one LED chip comprising a radiation decoupling surface through which the bulk of the electromagnetic radiation generated in the LED chip is decoupled. Arranged on the radiation decoupling surface is at least one phosphor layer for converting the electromagnetic radiation generated in the LED chip. A housing envelops portions of the LED chip and the phosphor layer.

    摘要翻译: 本发明涉及一种具有至少一个LED芯片的LED装置,其包括辐射去耦表面,通过该辐射去耦表面在LED芯片中产生的大部分电磁辐射被去耦合。 布置在辐射去耦表面上的是用于转换在LED芯片中产生的电磁辐射的至少一个磷光体层。 壳体包围LED芯片和荧光体层的部分。

    Radiation emitter component
    15.
    发明授权
    Radiation emitter component 失效
    辐射发射器组件

    公开(公告)号:US5999552A

    公开(公告)日:1999-12-07

    申请号:US9606

    申请日:1998-01-20

    摘要: A radiation emitter component, in particular an infrared emitter component with a conventional light-emitting diode housing, includes two electrode connections, one of which has a well-shaped reflector. The housing has an optically transparent, electrically non-conducting encapsulation material. A semiconductor laser chip is fastened in a well-shaped reflector of the light-emitting diode housing. The semiconductor laser chip has a quantum well structure, in particular with a strained layer structure, for example MOVPE epitaxial layers with a layer sequence GaAlAs-InGaAs-GaAlAs. A diffusor material can be inserted into the optically transparent, electrically non-conducting material of the light-emitting diode housing. The diffusor material is constructed or inserted with regard to type and concentration in such a way that in connection with the semiconductor laser chip encapsulated in the light-emitting diode housing, a radiation characteristic curve or an increase of an effective emission surface is produced that is comparable to that of a conventional infrared light-emitting diode.

    摘要翻译: 辐射发射器部件,特别是具有传统发光二极管外壳的红外发射器部件包括两个电极连接件,其中之一具有良好形状的反射器。 壳体具有光学透明的非导电封装材料。 将半导体激光芯片紧固在发光二极管壳体的形状好的反射器中。 半导体激光芯片具有量子阱结构,特别是具有应变层结构,例如具有层序列GaAlAs-InGaAs-GaAlAs的MOVPE外延层。 漫射材料可以插入到发光二极管外壳的光学透明的非导电材料中。 关于类型和浓度来构造或插入扩散材料,使得与封装在发光二极管外壳中的半导体激光器芯片有关,产生辐射特性曲线或有效发射表面的增加,即, 与传统的红外发光二极管相当。

    Method for producing an optoelectronic semiconductor component
    16.
    再颁专利
    Method for producing an optoelectronic semiconductor component 有权
    光电半导体元件的制造方法

    公开(公告)号:USRE37554E1

    公开(公告)日:2002-02-19

    申请号:US09776462

    申请日:2000-10-25

    IPC分类号: H01L2144

    摘要: The optoelectronic semiconductor component has an optoelectronic semiconductor chip disposed on a chip carrier with an approximately planar chip carrier surface. The semiconductor chip is fastened with predetermined alignment of its optical axis. A plastic base part supports the chip carrier. The semiconductor chip is electrically conductively connected to at least two electrode terminals routed through the base part, and a lens is disposed above the semiconductor chip on top of the base part. The lens is formed with an independently configured cap produced from plastic material. The cap is mechanically form-locked to a support of the base part. When the cap is placed onto the base part, a holder of the cap and the support engage with one another. The holder and the support are configured such that when the cap is placed onto the base part, the two parts are automatically positioned with respect to one another in such a way that the optical axes of the lens and of the semiconductor chip coincide.

    摘要翻译: 光电子半导体部件具有设置在具有大致平坦的芯片载体表面的芯片载体上的光电子半导体芯片。 半导体芯片以其光轴的预定对准被紧固。 塑料底座部分支撑芯片载体。 半导体芯片导电地连接到穿过基底部分的至少两个电极端子,并且在半导体芯片的上方设置透镜,在基部的顶部。 透镜形成有由塑料材料制成的独立构造的盖。 盖被机械地锁定到基部的支撑件上。 当盖子放置在基座部分上时,帽子和支架的支架彼此接合。 保持器和支撑件被构造成使得当帽被放置在基部上时,两个部分相对于彼此自动定位,使得透镜和半导体芯片的光轴重合。

    Method for Manufacturing at Least One Optoelectronic Semiconductor Device
    17.
    发明申请
    Method for Manufacturing at Least One Optoelectronic Semiconductor Device 有权
    最少一个光电半导体器件的制造方法

    公开(公告)号:US20140034983A1

    公开(公告)日:2014-02-06

    申请号:US13982225

    申请日:2011-12-21

    IPC分类号: H01L33/60 H01L33/50

    摘要: A method for manufacturing at least one optoelectronic semiconductor device includes providing a substrate and applying a number of optoelectronic semiconductor chips, which are arranged spaced apart from one another in a lateral direction, on an upper face of the substrate. At least one reflective coating is applied to the exposed areas of the substrate and the lateral surfaces of the optoelectronic semiconductor chips. Openings are introduced into the reflective coating, which completely penetrate the reflective coating. Electrically conductive material is arranged on the reflective coating and at least on some parts of the openings. Radiation penetration surfaces of the optoelectronic semiconductor chips are free of the reflective coating and the reflective coating does not laterally extend beyond the optoelectronic semiconductor chips.

    摘要翻译: 一种用于制造至少一个光电子半导体器件的方法包括:在衬底的上表面上提供衬底和施加多个在横向彼此间隔开的光电子半导体芯片。 至少一个反射涂层施加到基板的暴露区域和光电子半导体芯片的侧表面。 开口被引入到完全穿透反射涂层的反射涂层中。 导电材料布置在反射涂层上并且至少在开口的某些部分上。 光电子半导体芯片的辐射穿透表面没有反射涂层,反射涂层不横向延伸超过光电子半导体芯片。